The Experts below are selected from a list of 58008 Experts worldwide ranked by ideXlab platform
Elizabeth J. Opila - One of the best experts on this subject based on the ideXlab platform.
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Mechanisms for Variability of ZrB2‐30 vol% SiC Oxidation Kinetics
Journal of the American Ceramic Society, 2014Co-Authors: Kathleen Shugart, Brandon Patterson, David Lichtman, Siying Liu, Elizabeth J. OpilaAbstract:The Oxidation Kinetics of ZrB2-30 vol% SiC were analyzed statistically with the goal of understanding the underlying mechanisms for observed variability. A box furnace was used to oxidize specimens for times between 30 s and 100 h at temperatures of 1300°C–1550°C in air. The specimens were characterized to determine weight change, scale thickness, and scale composition to quantify the Oxidation behavior. Weight gain measurements of different specimens after 100 min of exposure showed differences of up to 2 mg/cm2 for the same testing conditions where the average weight gain was 2.54 mg/cm2. Variation of 30%–80% was observed in the average thickness of each layer of the oxide within a single specimen. Viscous glass flow was ruled out as a potential mechanism. Glass bubble formation was proposed as the main cause for Oxidation Kinetics variability.
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Oxidation Kinetics of Chemically Vapor‐Deposited Silicon Carbide in Wet Oxygen
Journal of the American Ceramic Society, 1994Co-Authors: Elizabeth J. OpilaAbstract:The Oxidation Kinetics of chemically vapor-deposited SiC in dry oxygen and wet oxygen at temperatures between 1,200 and 1,400 C were monitored using thermogravimetric analysis. It was found that in a clean environment, 10% water vapor enhanced the Oxidation Kinetics of SiC only very slightly compared to rates found in dry oxygen. Oxidation Kinetics were examined in terms of the Deal and Grove model for Oxidation of silicon. It was found that in an environment containing even small amounts of impurities, such as high-purity Al[sub 2]O[sub 3] reaction tubes containing 200 ppm Na, water vapor enhanced the transport of these impurities to the Oxidation sample. Oxidation rates increased under these conditions presumably because of the formation of less protective sodium aluminosilicate scales.
Shi Chong-zhe - One of the best experts on this subject based on the ideXlab platform.
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Research on the Oxidation Kinetics of the T91 Steel under High-temperature Water-vapour Condition
Hot Working Technology, 2007Co-Authors: Shi Chong-zheAbstract:Oxidation Kinetics of the T91 steel under high-temperature water-vapour condition is studied by serial weighing method with thermal analysis balance and linear regression method.The results indicates that the Oxidation Kinetics of the T91 steel under high-temperature water-vapour condition follows parabolic equations(y2=kt+c) under the 550,600,650 ℃ and bilinear equations(y=kt+c) under the 700 ℃ and 750 ℃.
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Research on Oxidation Kinetics of T91 Steel Under High-temperature Air Medium
Hot Working Technology, 2007Co-Authors: Shi Chong-zheAbstract:The Oxidation Kinetics of the T91 steel under high-temperature air medium was studied by serial weighing method with thermal analysis balance and linear regression method.The results show that the Oxidation Kinetics of the T91 steel follows cubical parabola equations under the 650℃ and 675℃ air medium,and bilinear equations under the 700℃ and 750℃ air medium.
Akira Toriumi - One of the best experts on this subject based on the ideXlab platform.
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Thermal Oxidation Kinetics of germanium
Applied Physics Letters, 2017Co-Authors: X. Wang, T. Nishimura, Takeaki Yajima, Akira ToriumiAbstract:Thermal Oxidation Kinetics of Ge was investigated by the 18O tracing study and re-Oxidation experiments of the SiO2/GeO2 stacked oxide-layer. The results suggest that Ge Oxidation Kinetics is completely different from that expected from the Deal-Grove model and that Ge is oxidized by GeO2 on Ge instead of O2 at the interface. This Oxidation process forms large amounts of oxygen vacancies in GeO2, which facilitate the diffusion of oxygen atoms in GeO2. This means that oxygen atoms diffuse through GeO2 with an exchange type of process. Based on experimental results, a possible Kinetics for Ge Oxidation is discussed.
Darryl P. Butt - One of the best experts on this subject based on the ideXlab platform.
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Oxidation Kinetics of Hexagonal-Shaped Single-Crystal Silicon Whiskers
Journal of the American Ceramic Society, 2004Co-Authors: Honggang Jiang, Yuntian Zhu, Darryl P. ButtAbstract:The Oxidation Kinetics of hexagonal-shaped Si whiskers at high temperature were studied. Si whiskers were oxidized at 1000°C under a partial oxygen pressure of 0.14 atm. Oxide thickness was measured using scanning electron microscopy (SEM). A unique model was developed to describe the Oxidation Kinetics of hexagonal-shaped fibers. The model takes into account the inward diffusion of oxygen, Oxidation reaction at the oxide/Si interface, and the fiber diameter change caused by the molar volume difference between SiO2 and Si. Comparison of the model with experimental data shows good agreement.
V.g. Zborovskii - One of the best experts on this subject based on the ideXlab platform.
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Method of elastic energy minimization for evaluation of transition parameters in Oxidation Kinetics of Zr alloys
Corrosion Science, 2012Co-Authors: V.v. Likhanskii, T.n. Aliev, M. Kolesnik, I.a. Evdokimov, V.g. ZborovskiiAbstract:Abstract In the present work, a transition in the Oxidation Kinetics of Zr-based alloys is investigated theoretically. The development of undulations of the oxide–metal interface is suggested to be a precursor of the transition. The analysis is based on finding conditions when the mechanical energy of the metal and the oxide film is minimal. The parameters of the wavy structure are related to the material’s mechanical and microstructure properties. The theoretical findings are in agreement with a number of experimental studies of the transition in the Oxidation Kinetics.
