Oxygen Content

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Robert A. Weller - One of the best experts on this subject based on the ideXlab platform.

  • Effect of Oxygen Content on piezoresistivity of indium tin oxide thin films prepared by pulsed laser deposition
    Journal of Applied Physics, 2005
    Co-Authors: Hui Fang, Timothy M. Miller, B. R. Rogers, Robert H. Magruder, Robert A. Weller
    Abstract:

    The piezoresistivity of thin films of indium tin oxide prepared by pulsed laser deposition has been measured as a function of the O-to-(In+Sn) atom ratio. The Oxygen-to-metal atom ratio was determined through Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy analyses. Gauge factors, defined as the fractional change of the film resistance to the applied strain, increase with the film’s Oxygen Content. The deposition under 50 mTorr Oxygen pressure resulted in the film with the largest Oxygen-to-metal atom ratio, 1.92, and a gauge factor of −14.5. A model based on hopping conduction is proposed. Results from this model are consistent with the sign and magnitude of the observed gauge factors.

  • resistivity and Oxygen Content of indium tin oxide films deposited at room temperature by pulsed laser ablation
    Journal of Applied Physics, 1999
    Co-Authors: C H M Maree, Richard F Haglund, J Hamilton, M Morales A Paliza, M B Huang, L C Feldman, Robert A. Weller
    Abstract:

    Transparent, conductive indium tin oxide (ITO) films were fabricated by pulsed-laser deposition on substrates held at room temperature. We investigated the relationship between electrical/optical properties of the films and the material stoichiometry, measured by Rutherford backscattering. The lowest resistivity films (∼4×10−4 Ω cm) have excessive Oxygen compared with the stoichiometric composition ITO. After annealing in argon at 400 °C for 1.5 h, the Oxygen-to-(indium+tin) ratio approaches the stoichiometric composition of 1.5 and resistivities of annealed samples are ∼2.5×10−4 Ω cm. The room-temperature ITO resistivity dependence on chamber gas pressure is explained in terms of a gas-dynamic model and Oxygen Content of the film.

Kenjiro Oura - One of the best experts on this subject based on the ideXlab platform.

  • depth profiling of Oxygen Content of indium tin oxide fabricated by bias sputtering
    Applied Surface Science, 1997
    Co-Authors: Shinichi Honda, Koji Chihara, Michio Watamori, Kenjiro Oura
    Abstract:

    Abstract Depth profiling of Oxygen in indium tin oxide (ITO) films, fabricated by a hot cathode Penning discharge sputtering (HC-PDS) on glass substrates with negative substrate voltage in Ar atmosphere has been investigated using a high-energy ion beam. The substrate bias voltage was changed from −100 to 0 V. The Oxygen Content in the deposited film changed with substrate bias voltage. It was considered that Ar ion bombardment affected the change in Oxygen composition. Correlation between Oxygen Content and the electrical and optical properties will be discussed.

  • Oxygen Content of indium tin oxide films fabricated by reactive sputtering
    Journal of Vacuum Science and Technology, 1995
    Co-Authors: Shinichi Honda, Michio Watamori, Akira Tsujimoto, Kenjiro Oura
    Abstract:

    Indium tin oxide (ITO) films, which are transparent conductive films, have been widely used in optoelectronic applications. A high quality film with correct stoichiometric composition is essential for its applications, such as a flat panel display. However, it is difficult to estimate the absolute Oxygen concentration. There are few studies of Oxygen depth profiling for ITO films. We have investigated a relationship between the Oxygen Content of ITO films and the electrical properties under various deposition conditions. The absolute Oxygen concentration has been determined by 16O(α,α)16O resonant backscattering of a 3.045 MeV 4He2+ ion beam. It has been found that there is a correlation between the depth profile of Oxygen concentration of ITO films and the film properties. In the case of the ITO film fabricated at room temperature, a large deficiency of Oxygen can be seen at the surface of the film. When the film was formed at 400 °C, no deficiency of Oxygen at the film surface was observed. The observed Oxygen concentration will be discussed in terms of the electrical and optical properties of the films.

D. V. Tsyura - One of the best experts on this subject based on the ideXlab platform.

I A H Aldawery - One of the best experts on this subject based on the ideXlab platform.

  • bulk ybco high superconductors with uniform and full Oxygen Content via microwave processing
    Superconductor Science and Technology, 1998
    Co-Authors: Jon G P Binner, I A H Aldawery
    Abstract:

    The potential for the use of microwave radiation as an alternative energy source for the sintering and annealing of bulk, ceramic high- YBCO superconductors has been investigated with a view to taking advantage of the opportunities presented by this novel heating technique. Microwave heating has been found to offer the possibility of sintering `from the inside out' due to the nature of the temperature profile developed. As a result, ceramic YBCO bodies measuring 35 mm in diameter by 5 mm thick have been produced with completely uniform and high Oxygen Content (x = 7 in ) and densities up to 98% of theoretical. These properties were achieved using total processing times approximately one sixth of those required conventionally. A model for the microwave heating process is proposed.

Yu. V. Balaban-irmenin - One of the best experts on this subject based on the ideXlab platform.

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