The Experts below are selected from a list of 56451 Experts worldwide ranked by ideXlab platform
Douglas C. Hopkins - One of the best experts on this subject based on the ideXlab platform.
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Design, Package, and Hardware Verification of a High-Voltage Current Switch
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2018Co-Authors: Ankan De, Vishnu Mahadeva Iyer, Subhashish Bhattacharya, Kasunaidu Vechalapu, Xin Zhao, Douglas C. HopkinsAbstract:This paper demonstrates various electrical and Package design considerations in series connecting a high-voltage (HV) silicon (Si)-IGBT (6500-V/25-A die) and a silicon carbide-junction barrier Schottky diode (6500-V/25-A die) to form an HV current switch. The effects of connecting the cathode of the series diode to an IGBT collector, versus connecting the IGBT emitter to the anode of the series diode, are analyzed in regards to minimizing the parasitic inductance. An optimized Package Structure is discussed and an HV current switch module is custom fabricated in the laboratory. An HV double pulse test circuit is used to verify the switching performance of the current switch module. Low-voltage and HV converter prototypes are developed and tested to ensure thermal stability of the same. The main motivation of this paper is to enumerate detailed design considerations for packaging an HV current switch.
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Design, Package, and hardware verification of a high voltage current switch
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 2016Co-Authors: Ankan De, Vishnu Mahadeva Iyer, Subhashish Bhattacharya, Kasunaidu Vechalapu, Xin Zhao, Douglas C. HopkinsAbstract:In this paper, an attempt has been made to demonstrate various Package design considerations to accommodate series connection of high voltage Si-IGBT (6500V/25A die) and SiC-Diode (6500V/25A die). The effects of connecting the cathode of the series diode to the collector of the IGBT versus connecting the emitter of the IGBT to the anode of the series diode have been analyzed in regards to parasitic line inductance of the Structure. Various simulation results have then been used to redesign and justify the optimized Package Structure for the final current switch design. The Package is fabricated using the optimized parameters. A double pulse test-circuit has been assembled. Initial hardware results have been shown to verify functioning. The main motivation of this work is to enumerate detailed design considerations for packing a high voltage current switch Package.
Ankan De - One of the best experts on this subject based on the ideXlab platform.
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Design, Package, and Hardware Verification of a High-Voltage Current Switch
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2018Co-Authors: Ankan De, Vishnu Mahadeva Iyer, Subhashish Bhattacharya, Kasunaidu Vechalapu, Xin Zhao, Douglas C. HopkinsAbstract:This paper demonstrates various electrical and Package design considerations in series connecting a high-voltage (HV) silicon (Si)-IGBT (6500-V/25-A die) and a silicon carbide-junction barrier Schottky diode (6500-V/25-A die) to form an HV current switch. The effects of connecting the cathode of the series diode to an IGBT collector, versus connecting the IGBT emitter to the anode of the series diode, are analyzed in regards to minimizing the parasitic inductance. An optimized Package Structure is discussed and an HV current switch module is custom fabricated in the laboratory. An HV double pulse test circuit is used to verify the switching performance of the current switch module. Low-voltage and HV converter prototypes are developed and tested to ensure thermal stability of the same. The main motivation of this paper is to enumerate detailed design considerations for packaging an HV current switch.
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Design, Package, and hardware verification of a high voltage current switch
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 2016Co-Authors: Ankan De, Vishnu Mahadeva Iyer, Subhashish Bhattacharya, Kasunaidu Vechalapu, Xin Zhao, Douglas C. HopkinsAbstract:In this paper, an attempt has been made to demonstrate various Package design considerations to accommodate series connection of high voltage Si-IGBT (6500V/25A die) and SiC-Diode (6500V/25A die). The effects of connecting the cathode of the series diode to the collector of the IGBT versus connecting the emitter of the IGBT to the anode of the series diode have been analyzed in regards to parasitic line inductance of the Structure. Various simulation results have then been used to redesign and justify the optimized Package Structure for the final current switch design. The Package is fabricated using the optimized parameters. A double pulse test-circuit has been assembled. Initial hardware results have been shown to verify functioning. The main motivation of this work is to enumerate detailed design considerations for packing a high voltage current switch Package.
Vishnu Mahadeva Iyer - One of the best experts on this subject based on the ideXlab platform.
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Design, Package, and Hardware Verification of a High-Voltage Current Switch
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2018Co-Authors: Ankan De, Vishnu Mahadeva Iyer, Subhashish Bhattacharya, Kasunaidu Vechalapu, Xin Zhao, Douglas C. HopkinsAbstract:This paper demonstrates various electrical and Package design considerations in series connecting a high-voltage (HV) silicon (Si)-IGBT (6500-V/25-A die) and a silicon carbide-junction barrier Schottky diode (6500-V/25-A die) to form an HV current switch. The effects of connecting the cathode of the series diode to an IGBT collector, versus connecting the IGBT emitter to the anode of the series diode, are analyzed in regards to minimizing the parasitic inductance. An optimized Package Structure is discussed and an HV current switch module is custom fabricated in the laboratory. An HV double pulse test circuit is used to verify the switching performance of the current switch module. Low-voltage and HV converter prototypes are developed and tested to ensure thermal stability of the same. The main motivation of this paper is to enumerate detailed design considerations for packaging an HV current switch.
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Design, Package, and hardware verification of a high voltage current switch
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 2016Co-Authors: Ankan De, Vishnu Mahadeva Iyer, Subhashish Bhattacharya, Kasunaidu Vechalapu, Xin Zhao, Douglas C. HopkinsAbstract:In this paper, an attempt has been made to demonstrate various Package design considerations to accommodate series connection of high voltage Si-IGBT (6500V/25A die) and SiC-Diode (6500V/25A die). The effects of connecting the cathode of the series diode to the collector of the IGBT versus connecting the emitter of the IGBT to the anode of the series diode have been analyzed in regards to parasitic line inductance of the Structure. Various simulation results have then been used to redesign and justify the optimized Package Structure for the final current switch design. The Package is fabricated using the optimized parameters. A double pulse test-circuit has been assembled. Initial hardware results have been shown to verify functioning. The main motivation of this work is to enumerate detailed design considerations for packing a high voltage current switch Package.
Xin Zhao - One of the best experts on this subject based on the ideXlab platform.
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Design, Package, and Hardware Verification of a High-Voltage Current Switch
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2018Co-Authors: Ankan De, Vishnu Mahadeva Iyer, Subhashish Bhattacharya, Kasunaidu Vechalapu, Xin Zhao, Douglas C. HopkinsAbstract:This paper demonstrates various electrical and Package design considerations in series connecting a high-voltage (HV) silicon (Si)-IGBT (6500-V/25-A die) and a silicon carbide-junction barrier Schottky diode (6500-V/25-A die) to form an HV current switch. The effects of connecting the cathode of the series diode to an IGBT collector, versus connecting the IGBT emitter to the anode of the series diode, are analyzed in regards to minimizing the parasitic inductance. An optimized Package Structure is discussed and an HV current switch module is custom fabricated in the laboratory. An HV double pulse test circuit is used to verify the switching performance of the current switch module. Low-voltage and HV converter prototypes are developed and tested to ensure thermal stability of the same. The main motivation of this paper is to enumerate detailed design considerations for packaging an HV current switch.
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Design, Package, and hardware verification of a high voltage current switch
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 2016Co-Authors: Ankan De, Vishnu Mahadeva Iyer, Subhashish Bhattacharya, Kasunaidu Vechalapu, Xin Zhao, Douglas C. HopkinsAbstract:In this paper, an attempt has been made to demonstrate various Package design considerations to accommodate series connection of high voltage Si-IGBT (6500V/25A die) and SiC-Diode (6500V/25A die). The effects of connecting the cathode of the series diode to the collector of the IGBT versus connecting the emitter of the IGBT to the anode of the series diode have been analyzed in regards to parasitic line inductance of the Structure. Various simulation results have then been used to redesign and justify the optimized Package Structure for the final current switch design. The Package is fabricated using the optimized parameters. A double pulse test-circuit has been assembled. Initial hardware results have been shown to verify functioning. The main motivation of this work is to enumerate detailed design considerations for packing a high voltage current switch Package.
Kasunaidu Vechalapu - One of the best experts on this subject based on the ideXlab platform.
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Design, Package, and Hardware Verification of a High-Voltage Current Switch
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2018Co-Authors: Ankan De, Vishnu Mahadeva Iyer, Subhashish Bhattacharya, Kasunaidu Vechalapu, Xin Zhao, Douglas C. HopkinsAbstract:This paper demonstrates various electrical and Package design considerations in series connecting a high-voltage (HV) silicon (Si)-IGBT (6500-V/25-A die) and a silicon carbide-junction barrier Schottky diode (6500-V/25-A die) to form an HV current switch. The effects of connecting the cathode of the series diode to an IGBT collector, versus connecting the IGBT emitter to the anode of the series diode, are analyzed in regards to minimizing the parasitic inductance. An optimized Package Structure is discussed and an HV current switch module is custom fabricated in the laboratory. An HV double pulse test circuit is used to verify the switching performance of the current switch module. Low-voltage and HV converter prototypes are developed and tested to ensure thermal stability of the same. The main motivation of this paper is to enumerate detailed design considerations for packaging an HV current switch.
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Design, Package, and hardware verification of a high voltage current switch
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 2016Co-Authors: Ankan De, Vishnu Mahadeva Iyer, Subhashish Bhattacharya, Kasunaidu Vechalapu, Xin Zhao, Douglas C. HopkinsAbstract:In this paper, an attempt has been made to demonstrate various Package design considerations to accommodate series connection of high voltage Si-IGBT (6500V/25A die) and SiC-Diode (6500V/25A die). The effects of connecting the cathode of the series diode to the collector of the IGBT versus connecting the emitter of the IGBT to the anode of the series diode have been analyzed in regards to parasitic line inductance of the Structure. Various simulation results have then been used to redesign and justify the optimized Package Structure for the final current switch design. The Package is fabricated using the optimized parameters. A double pulse test-circuit has been assembled. Initial hardware results have been shown to verify functioning. The main motivation of this work is to enumerate detailed design considerations for packing a high voltage current switch Package.
