The Experts below are selected from a list of 282 Experts worldwide ranked by ideXlab platform
Tsuyoshi Amano - One of the best experts on this subject based on the ideXlab platform.
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Phase imaging results of Phase Defect using micro-coherent extreme ultraviolet scatterometry microscope
Journal of Micro Nanolithography MEMS and MOEMS, 2016Co-Authors: Tetsuo Harada, Tsuyoshi Amano, Hiroo Kinoshita, Hiraku Hashimoto, Takeo WatanabeAbstract:To evaluate Defects on extreme ultraviolet (EUV) masks at the blank state of manufacturing, we developed a micro-coherent EUV scatterometry microscope (micro-CSM). The illumination source is coherent EUV light with a 140 nm focus diameter on the Defect using a Fresnel zone plate. This system directly observes the reflection and diffraction signals from a Phase Defect. The Phase and the intensity image of the Defect are reconstructed with the diffraction images using ptychography, which is an algorithm of the coherent diffraction imaging. We observed programmed Phase Defect on a blank EUV mask. Phase distributions of these programmed Defects were well reconstructed quantitatively. The micro-CSM is a very powerful tool to review an EUV Phase Defect.
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Phase imaging results of Phase Defect using micro coherent EUV scatterometry microscope
Photomask Technology 2015, 2015Co-Authors: Tetsuo Harada, Tsuyoshi Amano, Hiroo Kinoshita, Hiraku Hashimoto, Takeo WatanabeAbstract:To evaluate Defects on extreme ultraviolet (EUV) masks at the blank state of manufacturing, we developed a micro coherent EUV scatterometry microscope (micro-CSM). The illumination source is coherent EUV light with a 140-nm focus diameter on the Defect using a Fresnel zoneplate. This system directly observes the reflection and diffraction signals from a Phase Defect. The Phase and the intensity image of the Defect is reconstructed with the diffraction images using ptychography, which is an algorithm of the coherent diffraction imaging. We observed programmed Phase Defect on a blank EUV mask. Phase distributions of these programmed Defect were well reconstructed quantitatively. The micro-CSM is very powerful tool to review an EUV Phase Defect.
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Variations in programmed Phase Defect size and its impact on Defect detection signal intensity using at-wavelength inspection system
Photomask Technology 2015, 2015Co-Authors: Tsuyoshi Amano, Noriaki Takagi, Tsukasa AbeAbstract:A programmed Phase Defect Extreme Ultraviolet (EUV) mask was fabricated and measurement repeatability of the Defect size using a scanning probe microscope (SPM) was evaluated. The SPM measurement results indicated that the Defect size variation as registered by the measurement repeatability were much smaller than the Defect-to-Defect variations. It means the Defect-to-Defect variation in size actually does exist. Some Defects were found where their sizes before a multilayer coating (on quartz) were all the same but after the coat their sizes varied quite significantly when observed on the multilayer. This result indicated that it is difficult to estimate the Phase Defect size on quartz, whereas they can be accurately measured on multilayer. Influences of the Defect size variation on Defect detection signal intensity (DSI) using an actinic blank inspection (ABI) system were examined; their influences on the wafer printability were also examined. The DSI was strongly correlated with Defect depth on the multilayer, and it was also indicated that the ABI can detect small variations in Defect sizes. It was also confirmed that the impact of the Phase Defects on wafer printed CDs were proportional to the DSIs, and that the ABI has a potential to detect Phase Defect that could cause 5 % of the CD error when printing 16 nm dense lines.
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Measurement of the Phase Defect size using a scanning probe microscope and at-wavelength inspection tool
Journal of Micro Nanolithography MEMS and MOEMS, 2015Co-Authors: Tsuyoshi Amano, Tsukasa AbeAbstract:Predicting the lithography impact of a Phase Defect embedded in a mask used for extreme ultraviolet lithography on the printed image on wafer is a challenging task. In this study, two types of measurement tools were employed to characterize the Phase Defects. The prior measurement tool was a scanning probe microscope used for measuring the surface topography of Phase Defects, and the second was an at-wavelength dark-field inspection tool capable of capturing a Phase Defect and then calculating the Defect detection signal intensity (DSI) from those images. A programmed Phase Defect mask with various lateral sizes and depths was prepared. The sizes and DSIs were then measured. The measured data indicated that the DSIs did not directly correlate with the Phase Defect volumes. The influence of the Phase Defects on the printed image on a wafer was also calculated using a lithography simulator. The simulation results indicated that the printed critical dimensions (CDs) were strongly correlated with the DSIs rather than with the Phase Defect volumes. As a result, the influence of the Phase Defect on the printed CD can be predicted from the values of the DSIs.
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Measurement of the Phase Defect size using scanning probe microscope and at-wavelength inspection tool
Extreme Ultraviolet (EUV) Lithography VI, 2015Co-Authors: Tsuyoshi Amano, Tsukasa AbeAbstract:Predicting the lithographic impact of a Phase Defect, that is embedded in an Extreme Ultraviolet (EUV) mask, on a wafer printed image is one of the most challenging tasks. In this study, to characterize the Phase Defects, two types of measurement tools were employed and the data thus obtained from them were then evaluated for comparisons. One measurement tool was a scanning probe microscope used for measuring the surface topography of Phase Defects, and the other one was an at-wavelength dark-field inspection tool capable of capturing Phase Defect and then calculating the Defect detection signal intensity (DSI) from those images. A programmed Phase Defect mask with various lateral sizes and depths was prepared. The sizes and DSIs were then measured. The measured data indicated that the DSIs did not directly correlate with the Phase Defect volumes. The influence of the Phase Defects on a wafer printed images was also calculated using a lithography simulator. The calculated results indicated that the printed critical dimensions (CDs) were strongly correlated with the DSIs rather than with the Phase Defect volumes. As a result, the influence of the Phase Defect on the printed CD can be predicted from the values of the DSIs.
Rong Zhang - One of the best experts on this subject based on the ideXlab platform.
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Two-dimensional quantum walk with position-dependent Phase Defects
Quantum Information Processing, 2014Co-Authors: Rong Zhang, Peng XueAbstract:We demonstrate localization effect in a two-dimensional quantum walk architecture. With position-dependent Phase Defects, the symmetry of standard quantum walk is broken; the walker is trapped in a fixed position dynamically. We show how the factors such as the Phase Defect, initial state and coin flipping affect on the localization effect in the quantum walk architecture.
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One-dimensional quantum walks with single-point Phase Defects
Physical Review A, 2014Co-Authors: Rong Zhang, Peng Xue, Jason TwamleyAbstract:We observe the localization effect of one-dimensional quantum walks with single-point Phase Defects. The walker's spread velocity is dramatically suppressed by interference effects due to the Phase Defect. We show that the localization effect depends on four factors: the value and the position of the Phase Defect, the parameter of coin flipping, and the initial state of the walker + coin system.
Peng Xue - One of the best experts on this subject based on the ideXlab platform.
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Two-dimensional quantum walk with position-dependent Phase Defects
Quantum Information Processing, 2014Co-Authors: Rong Zhang, Peng XueAbstract:We demonstrate localization effect in a two-dimensional quantum walk architecture. With position-dependent Phase Defects, the symmetry of standard quantum walk is broken; the walker is trapped in a fixed position dynamically. We show how the factors such as the Phase Defect, initial state and coin flipping affect on the localization effect in the quantum walk architecture.
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One-dimensional quantum walks with single-point Phase Defects
Physical Review A, 2014Co-Authors: Rong Zhang, Peng Xue, Jason TwamleyAbstract:We observe the localization effect of one-dimensional quantum walks with single-point Phase Defects. The walker's spread velocity is dramatically suppressed by interference effects due to the Phase Defect. We show that the localization effect depends on four factors: the value and the position of the Phase Defect, the parameter of coin flipping, and the initial state of the walker + coin system.
Tsukasa Abe - One of the best experts on this subject based on the ideXlab platform.
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Variations in programmed Phase Defect size and its impact on Defect detection signal intensity using at-wavelength inspection system
Photomask Technology 2015, 2015Co-Authors: Tsuyoshi Amano, Noriaki Takagi, Tsukasa AbeAbstract:A programmed Phase Defect Extreme Ultraviolet (EUV) mask was fabricated and measurement repeatability of the Defect size using a scanning probe microscope (SPM) was evaluated. The SPM measurement results indicated that the Defect size variation as registered by the measurement repeatability were much smaller than the Defect-to-Defect variations. It means the Defect-to-Defect variation in size actually does exist. Some Defects were found where their sizes before a multilayer coating (on quartz) were all the same but after the coat their sizes varied quite significantly when observed on the multilayer. This result indicated that it is difficult to estimate the Phase Defect size on quartz, whereas they can be accurately measured on multilayer. Influences of the Defect size variation on Defect detection signal intensity (DSI) using an actinic blank inspection (ABI) system were examined; their influences on the wafer printability were also examined. The DSI was strongly correlated with Defect depth on the multilayer, and it was also indicated that the ABI can detect small variations in Defect sizes. It was also confirmed that the impact of the Phase Defects on wafer printed CDs were proportional to the DSIs, and that the ABI has a potential to detect Phase Defect that could cause 5 % of the CD error when printing 16 nm dense lines.
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Measurement of the Phase Defect size using a scanning probe microscope and at-wavelength inspection tool
Journal of Micro Nanolithography MEMS and MOEMS, 2015Co-Authors: Tsuyoshi Amano, Tsukasa AbeAbstract:Predicting the lithography impact of a Phase Defect embedded in a mask used for extreme ultraviolet lithography on the printed image on wafer is a challenging task. In this study, two types of measurement tools were employed to characterize the Phase Defects. The prior measurement tool was a scanning probe microscope used for measuring the surface topography of Phase Defects, and the second was an at-wavelength dark-field inspection tool capable of capturing a Phase Defect and then calculating the Defect detection signal intensity (DSI) from those images. A programmed Phase Defect mask with various lateral sizes and depths was prepared. The sizes and DSIs were then measured. The measured data indicated that the DSIs did not directly correlate with the Phase Defect volumes. The influence of the Phase Defects on the printed image on a wafer was also calculated using a lithography simulator. The simulation results indicated that the printed critical dimensions (CDs) were strongly correlated with the DSIs rather than with the Phase Defect volumes. As a result, the influence of the Phase Defect on the printed CD can be predicted from the values of the DSIs.
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Measurement of the Phase Defect size using scanning probe microscope and at-wavelength inspection tool
Extreme Ultraviolet (EUV) Lithography VI, 2015Co-Authors: Tsuyoshi Amano, Tsukasa AbeAbstract:Predicting the lithographic impact of a Phase Defect, that is embedded in an Extreme Ultraviolet (EUV) mask, on a wafer printed image is one of the most challenging tasks. In this study, to characterize the Phase Defects, two types of measurement tools were employed and the data thus obtained from them were then evaluated for comparisons. One measurement tool was a scanning probe microscope used for measuring the surface topography of Phase Defects, and the other one was an at-wavelength dark-field inspection tool capable of capturing Phase Defect and then calculating the Defect detection signal intensity (DSI) from those images. A programmed Phase Defect mask with various lateral sizes and depths was prepared. The sizes and DSIs were then measured. The measured data indicated that the DSIs did not directly correlate with the Phase Defect volumes. The influence of the Phase Defects on a wafer printed images was also calculated using a lithography simulator. The calculated results indicated that the printed critical dimensions (CDs) were strongly correlated with the DSIs rather than with the Phase Defect volumes. As a result, the influence of the Phase Defect on the printed CD can be predicted from the values of the DSIs.
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Phase Defect detection signal analysis: dependence of Defect size variation
Journal of Micro Nanolithography MEMS and MOEMS, 2015Co-Authors: Tsuyoshi Amano, Hidehiro Watanabe, Tsukasa AbeAbstract:The influence of the size or volume of the Phase Defect embedded in the extreme ultraviolet mask on wafer printability by scanning probe microscope (SPM) is well studied. However, only a few experimental results on the measurement accuracy of the Phase Defect size have been reported. Therefore, in this study, the measurement repeatability of the Phase Defect volume using SPM and the influence of the Defect volume distribution on Defect detection signal intensity (DSI) using an at-wavelength dark-field Defect inspection tool were examined. A programmed Phase Defect mask was prepared, and a Defect size measurement repeatability test was conducted using an SPM. As a result, the variation of the measured volume due to the measurement repeatability was much smaller than that of the Defect-to-Defect variation. This result indicates that measuring the volume of each Phase Defect is necessary in order to evaluate the Defect detection yield using a Phase Defect inspection tool and wafer printability. In addition, the images of Phase Defects were captured using an at-wavelength dark-field inspection tool from which the Defect DSIs were calculated. The DSI showed a direct correlation with the Defect volume.
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Variation in Phase Defect size on extreme ultraviolet mask before and after reflective multilayer coating
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics: Materials Processing Measurement and Phenomena, 2015Co-Authors: Tsuyoshi Amano, Tsukasa AbeAbstract:It is very difficult to predict how multilayer Defects known as “Phase Defects” impact on wafer printed image when embedded in an extreme ultraviolet (EUV) mask. Therefore, researchers have reported many techniques to analyze and characterize Phase Defects using scanning probe microscopes (SPMs) and Phase Defect inspection tools that employ deep ultraviolet or EUV optics. To characterize the Phase Defects using SPM or other inspection tools, preparing and employing a programmed Phase Defect mask is a practical way to address the task because the locations, sizes, and quantity of Phase Defects can be defined to fit experiments. For this study, a programmed Phase Defect mask was prepared to investigate the size uniformity of the programmed Phase Defects. The designed Phase Defects were holes 40-, 50-, 70-, or 80-nm-wide and 4.5-nm-deep. Using a SPM, the Phase Defects were measured for their depths and widths before and after coating with the multilayer. As a result, variations in the measured depths and wid...
Jason Twamley - One of the best experts on this subject based on the ideXlab platform.
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One-dimensional quantum walks with single-point Phase Defects
Physical Review A, 2014Co-Authors: Rong Zhang, Peng Xue, Jason TwamleyAbstract:We observe the localization effect of one-dimensional quantum walks with single-point Phase Defects. The walker's spread velocity is dramatically suppressed by interference effects due to the Phase Defect. We show that the localization effect depends on four factors: the value and the position of the Phase Defect, the parameter of coin flipping, and the initial state of the walker + coin system.