The Experts below are selected from a list of 675 Experts worldwide ranked by ideXlab platform

Kulwant Singh - One of the best experts on this subject based on the ideXlab platform.

  • fabrication of electron beam physical vapor deposited polysilicon Piezoresistive mems pressure sensor
    Sensors and Actuators A-physical, 2015
    Co-Authors: Kulwant Singh, Robin Joyce, Soney Varghese, Jamil Akhtar
    Abstract:

    Abstract MEMS pressure sensor fabrication introduce a number of challenges to handle the processed wafers in batch fabrication after bulk-micromachining. In this paper, fabrication process sequence was optimized where photolithography steps were reduced after the diaphragm formation. Reactive ion etching (RIE) and low pressure chemical vapor deposition (LPCVD) has been replaced during the modified process. Polysilicon thin film based on electron beam physical vapor deposition (EBPVD) was optimized for required sheet resistivity. MEMS pressure sensor rooted on EBPVD polysilicon Piezoresistive Sensing Element was successfully fabricated and characterized in terms of sensitivity, linearity and repeatability.

Jamil Akhtar - One of the best experts on this subject based on the ideXlab platform.

  • fabrication of electron beam physical vapor deposited polysilicon Piezoresistive mems pressure sensor
    Sensors and Actuators A-physical, 2015
    Co-Authors: Kulwant Singh, Robin Joyce, Soney Varghese, Jamil Akhtar
    Abstract:

    Abstract MEMS pressure sensor fabrication introduce a number of challenges to handle the processed wafers in batch fabrication after bulk-micromachining. In this paper, fabrication process sequence was optimized where photolithography steps were reduced after the diaphragm formation. Reactive ion etching (RIE) and low pressure chemical vapor deposition (LPCVD) has been replaced during the modified process. Polysilicon thin film based on electron beam physical vapor deposition (EBPVD) was optimized for required sheet resistivity. MEMS pressure sensor rooted on EBPVD polysilicon Piezoresistive Sensing Element was successfully fabricated and characterized in terms of sensitivity, linearity and repeatability.

Robin Joyce - One of the best experts on this subject based on the ideXlab platform.

  • fabrication of electron beam physical vapor deposited polysilicon Piezoresistive mems pressure sensor
    Sensors and Actuators A-physical, 2015
    Co-Authors: Kulwant Singh, Robin Joyce, Soney Varghese, Jamil Akhtar
    Abstract:

    Abstract MEMS pressure sensor fabrication introduce a number of challenges to handle the processed wafers in batch fabrication after bulk-micromachining. In this paper, fabrication process sequence was optimized where photolithography steps were reduced after the diaphragm formation. Reactive ion etching (RIE) and low pressure chemical vapor deposition (LPCVD) has been replaced during the modified process. Polysilicon thin film based on electron beam physical vapor deposition (EBPVD) was optimized for required sheet resistivity. MEMS pressure sensor rooted on EBPVD polysilicon Piezoresistive Sensing Element was successfully fabricated and characterized in terms of sensitivity, linearity and repeatability.

Chengkuo Lee - One of the best experts on this subject based on the ideXlab platform.

  • Optimization of NEMS pressure sensors with a multilayered diaphragm using silicon nanowires as Piezoresistive Sensing Elements
    Journal of Micromechanics and Microengineering, 2012
    Co-Authors: Liang Lou, Woo-tae Park, Dim-lee Kwong, J M Tsai, Songsong Zhang, Chengkuo Lee
    Abstract:

    A pressure sensor with a 200 µm diaphragm using silicon nanowires (SiNWs) as a Piezoresistive Sensing Element is developed and optimized. The SiNWs are embedded in a multilayered diaphragm structure comprising silicon nitride (SiN x ) and silicon oxide (SiO 2 ). Optimizations were performed on both SiNWs and the diaphragm structure. The diaphragm with a 1.2 µm SiN x layer is considered to be an optimized design in terms of small initial central deflection (0.1 µm), relatively high sensitivity (0.6% psi −1 ) and good linearity within our measurement range.

Ying Yu - One of the best experts on this subject based on the ideXlab platform.

  • Optimization of the GaAs-on-Si substrate for microelectromechanical systems (MEMS) sensor application
    Materials, 2012
    Co-Authors: Yun-bo Shi, Jifang He, Mifeng Li, Zhichuan Niu, Haiqiao Ni, Hao Guo, Jun Tang, Jun Liu, Chenyang Xue, Ying Yu
    Abstract:

    Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the Piezoresistive Sensing Element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based on Si, we have studied the optimization of the GaAs epitaxy layers on Si wafers. Matching superlattice and strain superlattice were used, and the surface defect density can be improved by two orders of magnitude. Combing with the Raman spectrum, the residual stress was characterized, and it can be concluded from the experimental results that the residual stress can be reduced by 50%, in comparison with the original substrate. This method gives us a solution to optimize the epitaxy GaAs layers on Si substrate, which will also optimize our future process of integration RTD and HEMT based on GaAs on Si substrate for the MEMS sensor applications.