The Experts below are selected from a list of 252 Experts worldwide ranked by ideXlab platform
Timothy K Horiuchi - One of the best experts on this subject based on the ideXlab platform.
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thin oxide charging current during Plasma Etching of aluminum
IEEE Electron Device Letters, 1991Co-Authors: H. Shin, C King, Timothy K HoriuchiAbstract:CV measurement is shown to be a more sensitive technique for characterizing Plasma-Etching induced damage than oxide breakdown. Plasma Etching of Al is shown to produce severe distortions in the oxide CV characteristics, from which one can easily deduce the Plasma charging current over many orders of magnitude. A clear radial variation of stressing is found and the charging current increases in proportion to the Al peripheral length rather than the area. Using the measured 10-pA/ mu m of the charging current, one should be able to predict the impact of this etch process on oxide integrity and interface stability for a given antenna geometry. >
H. Shin - One of the best experts on this subject based on the ideXlab platform.
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thin oxide charging current during Plasma Etching of aluminum
IEEE Electron Device Letters, 1991Co-Authors: H. Shin, C King, Timothy K HoriuchiAbstract:CV measurement is shown to be a more sensitive technique for characterizing Plasma-Etching induced damage than oxide breakdown. Plasma Etching of Al is shown to produce severe distortions in the oxide CV characteristics, from which one can easily deduce the Plasma charging current over many orders of magnitude. A clear radial variation of stressing is found and the charging current increases in proportion to the Al peripheral length rather than the area. Using the measured 10-pA/ mu m of the charging current, one should be able to predict the impact of this etch process on oxide integrity and interface stability for a given antenna geometry. >
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Plasma-Etching induced damage in thin oxide
IEEE SEMI Advanced Semiconductor Manufacturing Conference and Workshop - ASMC '92 Proceedings, 1Co-Authors: H. ShinAbstract:It is pointed out that Plasma Al Etching and resist ashing processes cause Fowler-Nordheim current to flow through the oxide and that Plasma-induced damage can be simulated and modeled as damage produced by constant current electrical stress. The current produced by the Plasma process increases with the antenna size of the device structure. C-V measurement is a more sensitive technique for characterizing Plasma-Etching-induced damage than oxide breakdown. The stress current is collected only through the aluminum surfaces not covered by the photoresist during Plasma processes. The Plasma stress current is proportional to Al pad peripheral length during Al Etching and Al pad area during photoresist stripping. A model of oxide damage due to Plasma Etching is proposed. >
Jane P. Chang - One of the best experts on this subject based on the ideXlab platform.
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Perspectives in nanoscale Plasma Etching: what are the ultimate limits?
Journal of Physics D: Applied Physics, 2011Co-Authors: Marchack Nathan P, Jane P. ChangAbstract:Plasmas have been widely utilized to pattern various materials, from metals to semiconductors and oxides to polymers, for a vast array of applications. The interplay between physical, chemical and material properties that comprises the backbone of Plasma Etching is discussed in this perspective paper, with a focus on the needed tools and approaches to address the challenges facing Plasma Etching and to realize the desired pattern transfer fidelity at the nanoscale.
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A Plasma Etching perspective of patterning novel materials and small structures
Nanofabrication: Technologies Devices and Applications, 2005Co-Authors: Jane P. ChangAbstract:Plasma Etching is an enabling technology to pattern novel materials and to generate small structures. This paper provides a Plasma Etching perspective in the era of nanofabrication, using the definition of the gate structure of a metal-oxide-semiconductor field effect transistor (MOSFET) as an example, followed by the importance of predictive modeling, and finally the application challenges of Plasma Etching in fabricating micro-chemical and biological sensors.
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Fundamentals of Feature Evolution in Plasma Etching
Lecture Notes on Principles of Plasma Processing, 2003Co-Authors: Francis F. Chen, Jane P. ChangAbstract:Plasma processes etch anisotropically and are used to transfer patterns from photoresist to the underlying thin film materials or substrates. There are many important parameters in Plasma Etching, as listed below. The greatest challenge in patterning features for microelectronics application is that each parameter can usually only be optimized at the expense of at least one of the others.
C.r. Abernathy - One of the best experts on this subject based on the ideXlab platform.
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Plasma Etching of III-V semiconductor thin films
Materials Chemistry and Physics, 1992Co-Authors: Stephen J. Pearton, Fan Ren, T. R. Fullowan, Avishay Katz, William S. Hobson, U. K. Chakrabarti, C.r. AbernathyAbstract:Abstract In this paper we will describe the use of various Plasma Etching techniques in III–V semiconductor technology. The fabrication of a typical device involves a sequence of patterning, Etching and deposition steps. The trend is toward the use of dry Etching whenever possible because of the more anisotropic features and better dimensional control that can be obtained. This approach is consistent with an integrated processing concept in that Plasma Etching is a vacuum technique, and the dry etch reactor chamber can be coupled with other deposition, annealing or epitaxial growth chambers via load locks and transfer arms.
F.c.m.j.m. Van Delft - One of the best experts on this subject based on the ideXlab platform.
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Structuring magnetic thin films by means of Plasma Etching
Journal of Magnetism and Magnetic Materials, 1995Co-Authors: F.c.m.j.m. Van DelftAbstract:Abstract Plasma Etching of magnetic thin films is much more difficult than Etching of silicon. A mechanistic framework has been constructed, which can explain why Plasma Etching of magnetic materials is, in many cases, restricted to low etch rates and oblique profiles.