The Experts below are selected from a list of 110262 Experts worldwide ranked by ideXlab platform
B. K. Laurich - One of the best experts on this subject based on the ideXlab platform.
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Inductive Plasma Source for thin film growth
Bulletin of the American Physical Society, 1993Co-Authors: JAY T SCHEUER, M. Tuszewski, I H Campbell, B. K. LaurichAbstract:The authors are developing a tool for semiconductor thin film growth based on the Plasma immersion ion implantation technique. This compact, inexpensive, high throughput implanter will allow separate control of dose rate, ion energy and substrate temperature while mitigating charging effects. The present system employs a cylindrical inductive Plasma Source (35 cm diameter, 400 kHz, 500 W) which has been characterized using Langmuir and magnetic probes. Radial and axial profiles of Plasma density and electron temperature along with measurements of induced Plasma current will be presented for a range of neutral pressure and rf power. Comparisons will be made to a model of inductive Source operation. Initial results of oxide growth on silicon and III-V materials will be presented.
Susumu Sato - One of the best experts on this subject based on the ideXlab platform.
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InN thin-film growth using an ECR Plasma Source
Materials Science and Engineering B-advanced Functional Solid-state Materials, 1995Co-Authors: Yuichi Sato, Susumu SatoAbstract:Abstract An electron-cyclotron-resonance (ECR) Plasma Source is used in a InN thin-film growth process by reactive evaporation. Some properties of prepared films are measured and compared with those of InN films grown using radio frequency (RF) Plasma. Deteriorations of surface morphology and crystallinity of the films are not observed even when their growth rate is extremely low. Dependences of the film properties on other parameters, such as distance between the ECR Source and substrates, or orifice size of the ECR Source, are also investigated. Moreover, some Plasma parameters of the ECR Source are compared with those of the RF Plasma by optical emission spectroscopy and Langmuir probe measurements.
Gary M. Hieftje - One of the best experts on this subject based on the ideXlab platform.
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Design and performance of a Plasma-Source mass spectrograph
Journal of the American Society for Mass Spectrometry, 1997Co-Authors: Thomas W. Burgoyne, Gary M. Hieftje, Ronald A. HitesAbstract:A Plasma-Source, simultaneously detecting, Mattauch-Herzog mass spectrograph for multi-element analysis was developed. Simultaneous detection should improve throughput, precision, and sensitivity over those instruments that use quadrupole or sector mass spectrometers. The new instrument is compact (approximately 80 cm in length) and is designed to detect a complete atomic mass spectrum in two mass windows that straddle but avoid argon. The design and some figures of merit are presented. With a dc glow discharge Source, a precision of 0. 5% determined from eight consecutive 10-s images was obtained for Cu isotope ratios in Naval Brass B. With the same sample, nickel and lead were detected at limits of 8 and 1 ppm. Measured Mg isotope ratios with an inductively coupled Plasma Source were within 4% of the expected values. The resolution at full width at half maximum is currently limited to approximately 60, in part because of poor peak shape. The origin of this peak shape has been determined to lie within the array detector and possibly results from its interaction with the fringing magnetic fields produced by the second sector.
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Fundamental and Applied Investigations in Plasma-Source Mass Spectrometry for Elemental Analysis
Mikrochimica Acta, 1991Co-Authors: Barbara S. Ross, D.m. Chambers, Gary M. HieftjeAbstract:The current status of Plasma Source-mass spectrometry (PS-MS) is reviewed. An overview of interference effects that exist, alternative Plasma Sources available, and mass spectrometer interface studies is provided. A discussion of current and future development areas in Plasma Source mass spectrometry is also included.
J. F. Schetzina - One of the best experts on this subject based on the ideXlab platform.
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atomic nitrogen production in a molecular beam epitaxy compatible electron cyclotron resonance Plasma Source
Journal of Vacuum Science & Technology B, 1994Co-Authors: R. P. Vaudo, J. W. Cook, J. F. SchetzinaAbstract:The first high‐resolution study of the optical emission from nitrogen Plasmas produced by an ASTeX compact electron cyclotron resonance (ECR) microwave Plasma Source is reported. The spectroscopic results clearly show that the ECR Plasma Source generates an appreciable flux of nitrogen atoms, as indicated by strong atomic emission lines in the near‐infrared spectral region, in addition to various species of molecular nitrogen.
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Atomic-nitrogen production in a radio-frequency Plasma Source
Optics letters, 1993Co-Authors: R. P. Vaudo, J. W. Cook, J. F. SchetzinaAbstract:The first high-resolution study, to our knowledge, of the optical emission from an Oxford Applied Research MPD21 nitrogen-Plasma Source is reported. The spectroscopic results clearly show that the MPD21 nitrogen-Plasma Source generates an appreciable flux of nitrogen atoms. This suggests that nitrogen atoms are the Plasma species responsible for the successful p-type doping of ZnSe:N and related alloys.
Philippe Guillot - One of the best experts on this subject based on the ideXlab platform.
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2.45-GHz microwave Plasma Sources using solid-state microwave generators. Collisional-type Plasma Source
Journal of Microwave Power and Electromagnetic Energy, 2017Co-Authors: Louis Latrasse, Marilena Radoiu, Philippe GuillotAbstract:ABSTRACTThe availability of high power solid-state microwave generators opens new directions in Plasma generation with applications in industrial Plasma processing at low pressure. The optimization of the Plasma production line, i.e. from the microwave generator to the Plasma Source, is a requisite to enable the scaling-up while ensuring a robust control of the equipment. In addition to the electron cyclotron resonance (ECR) coaxial microwave Plasma Source previously reported, a collisional Plasma Source was developed for processing at 1–100 Pa. Similar to the ECR Plasma Source, the results of measurements performed with the collisional Plasma Source demonstrate that Plasma density and uniformity are highly dependent on the microwave power, the reactor pressure and the distance to and between Plasma Sources. It was demonstrated that the collisional Plasma Source can attain very high Plasma densities, i.e. >1012 cm−3 in argon and >1011 cm−3 in molecular gases like O2, N2, air, H2, making it suitable for hi...
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2.45-GHz microwave Plasma Sources using solid-state microwave generators. Collisional-type Plasma Source
Journal of Microwave Power and Electromagnetic Energy, 2017Co-Authors: Louis Latrasse, Marilena Radoiu, Philippe GuillotAbstract:The availability of high power solid-state microwave generators opens new directions in Plasma generation with applications in industrial Plasma processing at low pressure. The optimization of the Plasma production line, i.e. from the microwave generator to the Plasma Source, is a requisite to enable the scaling-up while ensuring a robust control of the equipment. In addition to the electron cyclotron resonance (ECR) coaxial microwave Plasma Source previously reported, a collisional Plasma Source was developed for processing at 1\textendash100 Pa. Similar to the ECR Plasma Source, the results of measurements performed with the collisional Plasma Source demonstrate that Plasma density and uniformity are highly dependent on the microwave power, the reactor pressure and the distance to and between Plasma Sources. It was demonstrated that the collisional Plasma Source can attain very high Plasma densities, i.e. \\textgreater1012 cm-3 in argon and \\textgreater1011 cm-3 in molecular gases like O2, N2, air, H2, making it suitable for high deposition rate Plasma-enhanced chemical vapour deposition or for high density production of reactive species. A comparison of the two microwave Plasma Sources is given for the main Plasma parameters; the choice of one Plasma Source over the other depends on the intended process/operating pressure.
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2.45-GHz microwave Plasma Sources using solid-state microwave generators. ECR-type Plasma Source
Journal of Microwave Power and Electromagnetic Energy, 2016Co-Authors: Louis Latrasse, Marilena Radoiu, Juslan Lo, Philippe GuillotAbstract:To meet industrial requirements for large-scale processing with high-density and uniform Plasma, mandatory for surface treatments to get uniform etching and high deposition rates, we have conceived a new electron cyclotron resonance (ECR) coaxial microwave Plasma Source which can sustain stable Plasmas from 10-2 Pa to a few Pa, whatever the processing gas, the minimum sustaining microwave power being only a few watt. Furthermore, because the Plasma Source is powered by its own microwave solid-state generator, multiple ECR Plasma Sources operating in different conditions of gas type and microwave power can be distributed together in the same reactor. In this design, the solid-state microwave generator produces a forward wave with variable frequency from 2400 to 2500 MHz; this feature is used in an automatic adjustment loop which enables to lower the reflected power created occasionally by changes in the operating conditions. The advantages of the new technology are reported in connection with the Plasma scaling-up requirements to distribute uniformly the electric field over large areas. Optical emission spectroscopy and Langmuir probe have been used for the measurement of Plasma density, uniformity and electron temperature in argon, oxygen and nitrogen. The results are reported in as a function of the gas type, number of Sources and their distribution inside the Plasma reactor. The new Plasma Source enables the production of Plasma densities \\textgreater1011 cm-3 in all tested gases \textendash Ar, O2, N2, air \textendash at d = 85 mm.