The Experts below are selected from a list of 59199 Experts worldwide ranked by ideXlab platform
Kaituo Yang - One of the best experts on this subject based on the ideXlab platform.
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Compact Switched-Capacitor Power Detector With Frequency Compensation in 65-nm CMOS
IEEE Access, 2020Co-Authors: Chirn Chye Boon, Zhipeng Liang, Kaituo YangAbstract:This work presents a compact switched-capacitor Power Detector (PD) with frequency compensation technique in a 65-nm CMOS process. Utilizing self-biased MOSFET as switches, the PD works both at the positive and the negative cycle to increase the dynamic range (DR). The output of traditional Power Detectors usually change with the variations of input frequencies which make the measurement of PD more difficult. In this design, by adding a feed-forward frequency detection circuit, the load resistors of the Power Detector are changed according to the input frequencies. Thus, the effect of input frequency variation is minimized. The measured operation frequency of the Power Detector is from 3 GHz to 5 GHz with a dynamic range of 20 dB with an error of ±2 dB. The variations of the output voltage are reduced from more than 4 dB to ±0.5 dB, achieving a variation of less than ±0.25 dB/GHz. To the authors’ knowledge, it is the first Power Detector with input frequency compensation. The core of the Power Detector occupies an area of 0.014mm2 and consumes 2.04mW static Power.
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A 34-dB Dynamic Range 0.7-mW Compact Switched-Capacitor Power Detector in 65-nm CMOS
IEEE Transactions on Power Electronics, 2019Co-Authors: Chirn Chye Boon, Kaituo YangAbstract:This letter presents a wide dynamic range low Power consumption Power Detector with a compact area in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The maximum detectable Power of traditional Power Detector is limited due to the non-linearity of mosfet s. This problem is solved by using P-type and N-type doped material (PN) junction diodes as switches that have a linear input–output voltage relationship in the proposed Power Detector. In this structure, the switches work at both the positive and negative cycles to increase the dynamic range. With the increase of input Power, the difference between the voltages applied to the two terminals of the diode is also increased. Thus, the current flowing through the diodes and the load resistor is augmented, boosting the output dc voltage. According to the measurement results, the Power Detector operates from 4 to ${\text{6 GHz}}$ with a dynamic range of 34 and $\pm {\text{1 dB}}$ error at ${\text{5 GHz}}$ . To the authors’ best knowledge, it is the first Power Detector that has achieved such wide dynamic range with maximum input Power of ${\text{35 dBm}}$ . The core of the Power Detector occupies an area of ${\text{0.0036 mm}}^{2}$ and consumes 0.7-mW static Power.
Patrick Reynaert - One of the best experts on this subject based on the ideXlab platform.
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An E-band Fully-Integrated True Power Detector in 28nm CMOS
2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2019Co-Authors: Valdrin Qunaj, Patrick ReynaertAbstract:This paper presents the design of a Power amplifier with a low-Power fully-integrated E-band true Power Detector in a 28nm CMOS technology. The Power Detector is able to measure the true output Power with a dynamic range of 27.2dB at a frequency of 75GHz for a linearity error of ±0.5dB. The Detector has a low Power consumption of 66μW and occupies an active area of 54x130μm2. Furthermore, the integrated Detector is able to measure antenna load variations. The Power amplifier design uses capacitive neutralization for gain and stability enhancement and achieves a peak gain of 23.1dB. The measured Psat, OP1dB and peak PAE at 75GHz are 11.6dBm, 9.7 dBm and 22.8% respectively.
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PRIME - An Integrated Power Detector for a 5GHz RF PA
2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2018Co-Authors: Valdrin Qunaj, Umut Celik, Patrick ReynaertAbstract:A fully integrated Power Detector is presented that detects both instantaneous RF voltage and current. Both signals are multiplied using an on-chip low-noise, high linearity mixer to measure the real Power delivered to the load of an integrated PA operating at $5\mathrm {G}\mathrm {H}\mathrm {z}$ in predictive $45\mathrm {n}\mathrm {m}$ CMOS technology. The dynamic range of the Detector is $23.~72\mathrm {d}\mathrm {B}$ with an accuracy of $< \pm 0.5\mathrm {d}\mathrm {B}$. Even under antenna load mismatch the Detector is able measure the real Power delivered to the load up to a voltage standing wave ration of 2.7:1 with an error $< \pm 0.6\mathrm {d}\mathrm {B}.$ The Power Detector has no effect on the PA performance and can be integrated under the large output matching transformer, resulting in a cost efficient design.
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A Fully Integrated Transformer-Coupled Power Detector With 5 GHz RF PA for WLAN 802.11ac in 40 nm CMOS
IEEE Journal of Solid-State Circuits, 2015Co-Authors: Brecht François, Patrick ReynaertAbstract:This paper introduces a fully integrated direct Power Detector that monitors both RF current and RF voltage to detect the RF output Power of the on-chip RF PA realized in a standard 40 nm CMOS process. The RF current measurement is realized by a sense winding in the output transformer, while the RF voltage waveform measurement is performed by capacitive division of the RF output voltage. Since the RF current and the RF voltage are both acquired, this Power Detector accurately and continuously determines the real output Power of the RF PA with a maximum inaccuracy of ±0.5 dB over a wide 32.5 dB dynamic range. This Power Detector was integrated together with a 5 GHz RF PA designed for the WLAN IEEE 802.11ac communication standard. The Power Detector is capable of performing a RF output Power measurement even for an antenna impedance mismatch up to voltage standing wave ratio (VSWR) 2.8:1 with an accuracy of ±1 dB, which allows the Power Detector to be used in an automatic antenna-mismatch correction system to prevent performance degradation in the RF PA. Finally, since the proposed Power Detector can be completely incorporated inside the RF PA output transformer. It results in zero area overhead, proving a very cost effective design.
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3 3 a transformer coupled true rms Power Detector in 40nm cmos
International Solid-State Circuits Conference, 2014Co-Authors: Brecht François, Patrick ReynaertAbstract:To optimize the Power consumption and system performance of battery-supplied devices, it is required to monitor and adjust the transmitted RF Power accurately and continuously. This is typically done by an external Power Detector (PD), which increases area and cost. On the other hand, fully integrated Power Detectors are typically voltage-based [1-5] and only give the correct RF output Power for a fixed load impedance. But in practice, antenna impedance variations will occur, causing VSWR mismatches that introduce an error in these voltage-based RF output Power measurements. This paper presents a 5GHz WLAN PA with an on-chip true-RMS Power Detector, without any additional Power loss or area overhead. The Power Detector is based on a magnetically coupled sense winding and takes advantage of transformer-based Power combining and impedance transformation that has become common practice in nanometer CMOS RF PAs. The proposed Power Detector performs both an RF voltage and RF current measurement at the PA output and is therefore capable of performing a True Power measurement, even under VSWR mismatches or load variations. This proposed Power Detector is implemented in 40nm standard CMOS and unlike earlier reported Power Detectors [1-4], it is integrated together with a 5GHz RF PA targeting the WLAN (IEEE 802.11a) communication standard.
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ISSCC - 3.3 A transformer-coupled true-RMS Power Detector in 40nm CMOS
2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014Co-Authors: Brecht François, Patrick ReynaertAbstract:To optimize the Power consumption and system performance of battery-supplied devices, it is required to monitor and adjust the transmitted RF Power accurately and continuously. This is typically done by an external Power Detector (PD), which increases area and cost. On the other hand, fully integrated Power Detectors are typically voltage-based [1-5] and only give the correct RF output Power for a fixed load impedance. But in practice, antenna impedance variations will occur, causing VSWR mismatches that introduce an error in these voltage-based RF output Power measurements. This paper presents a 5GHz WLAN PA with an on-chip true-RMS Power Detector, without any additional Power loss or area overhead. The Power Detector is based on a magnetically coupled sense winding and takes advantage of transformer-based Power combining and impedance transformation that has become common practice in nanometer CMOS RF PAs. The proposed Power Detector performs both an RF voltage and RF current measurement at the PA output and is therefore capable of performing a True Power measurement, even under VSWR mismatches or load variations. This proposed Power Detector is implemented in 40nm standard CMOS and unlike earlier reported Power Detectors [1-4], it is integrated together with a 5GHz RF PA targeting the WLAN (IEEE 802.11a) communication standard.
Yijun Zhou - One of the best experts on this subject based on the ideXlab platform.
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a low Power ultra wideband cmos true rms Power Detector
IEEE Transactions on Microwave Theory and Techniques, 2008Co-Authors: Yijun Zhou, M Y W ChiaAbstract:This paper introduces a low-Power ultra-wideband true root-mean-square Power Detector with a 0.13-mum CMOS process operating from 125 MHz to 8.5 GHz. The Detector utilizes the MOS transistor's square-law characteristic in the strong inversion region to obtain the Power information of the input RF signal, and its exponential characteristic in the weak inversion region to realize the linear-in-decibel output. Measured dynamic ranges are 20 dB at 125 MHz and 18 dB at 8.5 GHz, respectively, with tolerances of plusmn0.5-dB error. WiMedia-ultrawideband and wireless local area network 802.11a signals with different modulation techniques and data rates are measured. The integrated Detector operates at 1.2-V supply voltage, and its static Power consumption is 0.18 mW.
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ISCAS - A wide band CMOS RF Power Detector
2006 IEEE International Symposium on Circuits and Systems, 1Co-Authors: Yijun Zhou, M. Chia Yan WahAbstract:This paper presents a wide band CMOS RF Power Detector using 0.25 /spl mu/m technology. It includes a CMOS Power Detector unit, a chopper modulator and a logarithmic amplifier. Chopper technique is applied to reduce the dc offset. The CMOS RF Power Detector achieves 45 dB dynamic range with bandwidth up to 6 GHz. The Power consumption is 17 mW from 2.5 V Power supply.
Chirn Chye Boon - One of the best experts on this subject based on the ideXlab platform.
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Compact Switched-Capacitor Power Detector With Frequency Compensation in 65-nm CMOS
IEEE Access, 2020Co-Authors: Chirn Chye Boon, Zhipeng Liang, Kaituo YangAbstract:This work presents a compact switched-capacitor Power Detector (PD) with frequency compensation technique in a 65-nm CMOS process. Utilizing self-biased MOSFET as switches, the PD works both at the positive and the negative cycle to increase the dynamic range (DR). The output of traditional Power Detectors usually change with the variations of input frequencies which make the measurement of PD more difficult. In this design, by adding a feed-forward frequency detection circuit, the load resistors of the Power Detector are changed according to the input frequencies. Thus, the effect of input frequency variation is minimized. The measured operation frequency of the Power Detector is from 3 GHz to 5 GHz with a dynamic range of 20 dB with an error of ±2 dB. The variations of the output voltage are reduced from more than 4 dB to ±0.5 dB, achieving a variation of less than ±0.25 dB/GHz. To the authors’ knowledge, it is the first Power Detector with input frequency compensation. The core of the Power Detector occupies an area of 0.014mm2 and consumes 2.04mW static Power.
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A 34-dB Dynamic Range 0.7-mW Compact Switched-Capacitor Power Detector in 65-nm CMOS
IEEE Transactions on Power Electronics, 2019Co-Authors: Chirn Chye Boon, Kaituo YangAbstract:This letter presents a wide dynamic range low Power consumption Power Detector with a compact area in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The maximum detectable Power of traditional Power Detector is limited due to the non-linearity of mosfet s. This problem is solved by using P-type and N-type doped material (PN) junction diodes as switches that have a linear input–output voltage relationship in the proposed Power Detector. In this structure, the switches work at both the positive and negative cycles to increase the dynamic range. With the increase of input Power, the difference between the voltages applied to the two terminals of the diode is also increased. Thus, the current flowing through the diodes and the load resistor is augmented, boosting the output dc voltage. According to the measurement results, the Power Detector operates from 4 to ${\text{6 GHz}}$ with a dynamic range of 34 and $\pm {\text{1 dB}}$ error at ${\text{5 GHz}}$ . To the authors’ best knowledge, it is the first Power Detector that has achieved such wide dynamic range with maximum input Power of ${\text{35 dBm}}$ . The core of the Power Detector occupies an area of ${\text{0.0036 mm}}^{2}$ and consumes 0.7-mW static Power.
Brecht François - One of the best experts on this subject based on the ideXlab platform.
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A Fully Integrated Transformer-Coupled Power Detector With 5 GHz RF PA for WLAN 802.11ac in 40 nm CMOS
IEEE Journal of Solid-State Circuits, 2015Co-Authors: Brecht François, Patrick ReynaertAbstract:This paper introduces a fully integrated direct Power Detector that monitors both RF current and RF voltage to detect the RF output Power of the on-chip RF PA realized in a standard 40 nm CMOS process. The RF current measurement is realized by a sense winding in the output transformer, while the RF voltage waveform measurement is performed by capacitive division of the RF output voltage. Since the RF current and the RF voltage are both acquired, this Power Detector accurately and continuously determines the real output Power of the RF PA with a maximum inaccuracy of ±0.5 dB over a wide 32.5 dB dynamic range. This Power Detector was integrated together with a 5 GHz RF PA designed for the WLAN IEEE 802.11ac communication standard. The Power Detector is capable of performing a RF output Power measurement even for an antenna impedance mismatch up to voltage standing wave ratio (VSWR) 2.8:1 with an accuracy of ±1 dB, which allows the Power Detector to be used in an automatic antenna-mismatch correction system to prevent performance degradation in the RF PA. Finally, since the proposed Power Detector can be completely incorporated inside the RF PA output transformer. It results in zero area overhead, proving a very cost effective design.
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3 3 a transformer coupled true rms Power Detector in 40nm cmos
International Solid-State Circuits Conference, 2014Co-Authors: Brecht François, Patrick ReynaertAbstract:To optimize the Power consumption and system performance of battery-supplied devices, it is required to monitor and adjust the transmitted RF Power accurately and continuously. This is typically done by an external Power Detector (PD), which increases area and cost. On the other hand, fully integrated Power Detectors are typically voltage-based [1-5] and only give the correct RF output Power for a fixed load impedance. But in practice, antenna impedance variations will occur, causing VSWR mismatches that introduce an error in these voltage-based RF output Power measurements. This paper presents a 5GHz WLAN PA with an on-chip true-RMS Power Detector, without any additional Power loss or area overhead. The Power Detector is based on a magnetically coupled sense winding and takes advantage of transformer-based Power combining and impedance transformation that has become common practice in nanometer CMOS RF PAs. The proposed Power Detector performs both an RF voltage and RF current measurement at the PA output and is therefore capable of performing a True Power measurement, even under VSWR mismatches or load variations. This proposed Power Detector is implemented in 40nm standard CMOS and unlike earlier reported Power Detectors [1-4], it is integrated together with a 5GHz RF PA targeting the WLAN (IEEE 802.11a) communication standard.
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ISSCC - 3.3 A transformer-coupled true-RMS Power Detector in 40nm CMOS
2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014Co-Authors: Brecht François, Patrick ReynaertAbstract:To optimize the Power consumption and system performance of battery-supplied devices, it is required to monitor and adjust the transmitted RF Power accurately and continuously. This is typically done by an external Power Detector (PD), which increases area and cost. On the other hand, fully integrated Power Detectors are typically voltage-based [1-5] and only give the correct RF output Power for a fixed load impedance. But in practice, antenna impedance variations will occur, causing VSWR mismatches that introduce an error in these voltage-based RF output Power measurements. This paper presents a 5GHz WLAN PA with an on-chip true-RMS Power Detector, without any additional Power loss or area overhead. The Power Detector is based on a magnetically coupled sense winding and takes advantage of transformer-based Power combining and impedance transformation that has become common practice in nanometer CMOS RF PAs. The proposed Power Detector performs both an RF voltage and RF current measurement at the PA output and is therefore capable of performing a True Power measurement, even under VSWR mismatches or load variations. This proposed Power Detector is implemented in 40nm standard CMOS and unlike earlier reported Power Detectors [1-4], it is integrated together with a 5GHz RF PA targeting the WLAN (IEEE 802.11a) communication standard.