The Experts below are selected from a list of 3426 Experts worldwide ranked by ideXlab platform

Alex Q. Huang - One of the best experts on this subject based on the ideXlab platform.

  • Power Semiconductor devices for smart grid and renewable energy systems
    Power Electronics in Renewable Energy Systems and Smart Grid, 2019
    Co-Authors: Alex Q. Huang
    Abstract:

    This chapter intends to provide a comprehensive and comparative discussion of various important Power device technologies which are critical for industrial, smart grid and renewable energy applications. A Power Semiconductor Switch is a three‐terminal device that can either conduct a current when it is commanded ON, or block a voltage when it is commanded OFF through the control terminal. Modern Power converters require the Power device to Switch at high frequencies. A modern Power Semiconductor device operates between ON and OFF states at a high Switching frequency. One way to compare state‐of‐the‐art Power devices, especially their commercial readiness, is to compare their absolute voltage and current ratings. The chapter reviews several important innovations in Si Power devices. The most exciting development in Power Semiconductor devices in the last decade is the commercialization of a number of wide bandgap Power devices.

  • Development of a Scalable Power Semiconductor Switch (SPSS)
    IEEE Transactions on Power Electronics, 2007
    Co-Authors: Hongfang Wang, Alex Q. Huang, Fei Wang
    Abstract:

    This paper presents the design and development of a 4800-V, 300-A, 10-kHz scalable Power Semiconductor Switch (SPSS) based on series connecting low voltage insulated gate bipolar transistors (IGBTs). The static and dynamic voltage balance among IGBTs is achieved using a hybrid approach of active clamp circuit and an active gate control that is also effective during tail current phase. The developed SPSS derives its control Power directly from the main Power bus. Control, packaging, and thermal characteristics are an integral part of the SPSS design. From a user's standpoint, the SPSS is a three-terminal optically controlled high-Power Switch. Experimental evaluation of the prototype SPSS shows it fully achieved the design objectives. In principle, the approach can be extended to building Switches with higher voltages, currents, and Switching frequencies, or even with other types of devices than IGBTs

  • Emitter turn-off (ETO) thyristor: an emerging, lower cost Power Semiconductor Switch with improved performance for converter-based transmission controllers
    31st Annual Conference of IEEE Industrial Electronics Society 2005. IECON 2005., 2005
    Co-Authors: Bin Chen, Alex Q. Huang, Stanley Atcitty, A.-a. Edris, M. Ingram
    Abstract:

    The emitter turn-off thyristor (ETO) is a new emerging high Power Semiconductor Switch which combines the advantages of thyristor's high voltage/current capability and MOS easy gate control. Due to very high silicon utilization and use of conventional thyristor technology, it has much lower cost compared with other competing technologies. Furthermore, it has significantly improved performance in current conduction, turn-off speed, and snubberless turn-off current capability. Future ETO Switches under development will also pack with additional features that no-competing technologies offer, including built-in voltage, current and temperature sensing capability, control-Power self-generation capability and high-voltage current saturation capability. These capabilities make ETO a very promising Power Semiconductor device to reduce the cost of converter-based transmission controllers while improving the controller output Power, dynamic performance, and operating reliability

  • Development of a scalable Power Semiconductor Switch (SPSS)
    Twentieth Annual IEEE Applied Power Electronics Conference and Exposition 2005. APEC 2005., 1
    Co-Authors: Hongfang Wang, Alex Q. Huang, Bin Chen, Fred Wang
    Abstract:

    High voltage IGBTs have limited Switching capabilities with maximum Switching frequency lower than 2 kHz, primarily due to their high Switching losses. Similar situation is true for other high voltage silicon bipolar Power Switches. On the other hand, lower voltage IGBTs can operate at much higher Switching frequencies. However, these IGBT'S voltage rating does not match the need for many high voltage applications. This paper discusses the design and development of a 4800 V, 300 A, 10 kHz scalable Power Semiconductor Switch (SPSS) based on series connecting IGBTs. The static and dynamic voltage balance between IGBTs are achieved using active clamp circuit and active gate control. The developed SPSS derives its control Power directly from the main Power bus. From a user's standpoint, the SPSS is a three terminal optically controlled high-Power Switch.

Hongfang Wang - One of the best experts on this subject based on the ideXlab platform.

  • Development of a Scalable Power Semiconductor Switch (SPSS)
    IEEE Transactions on Power Electronics, 2007
    Co-Authors: Hongfang Wang, Alex Q. Huang, Fei Wang
    Abstract:

    This paper presents the design and development of a 4800-V, 300-A, 10-kHz scalable Power Semiconductor Switch (SPSS) based on series connecting low voltage insulated gate bipolar transistors (IGBTs). The static and dynamic voltage balance among IGBTs is achieved using a hybrid approach of active clamp circuit and an active gate control that is also effective during tail current phase. The developed SPSS derives its control Power directly from the main Power bus. Control, packaging, and thermal characteristics are an integral part of the SPSS design. From a user's standpoint, the SPSS is a three-terminal optically controlled high-Power Switch. Experimental evaluation of the prototype SPSS shows it fully achieved the design objectives. In principle, the approach can be extended to building Switches with higher voltages, currents, and Switching frequencies, or even with other types of devices than IGBTs

  • Development of a scalable Power Semiconductor Switch (SPSS)
    Twentieth Annual IEEE Applied Power Electronics Conference and Exposition 2005. APEC 2005., 1
    Co-Authors: Hongfang Wang, Alex Q. Huang, Bin Chen, Fred Wang
    Abstract:

    High voltage IGBTs have limited Switching capabilities with maximum Switching frequency lower than 2 kHz, primarily due to their high Switching losses. Similar situation is true for other high voltage silicon bipolar Power Switches. On the other hand, lower voltage IGBTs can operate at much higher Switching frequencies. However, these IGBT'S voltage rating does not match the need for many high voltage applications. This paper discusses the design and development of a 4800 V, 300 A, 10 kHz scalable Power Semiconductor Switch (SPSS) based on series connecting IGBTs. The static and dynamic voltage balance between IGBTs are achieved using active clamp circuit and active gate control. The developed SPSS derives its control Power directly from the main Power bus. From a user's standpoint, the SPSS is a three terminal optically controlled high-Power Switch.

Fei Wang - One of the best experts on this subject based on the ideXlab platform.

  • Development of a Scalable Power Semiconductor Switch (SPSS)
    IEEE Transactions on Power Electronics, 2007
    Co-Authors: Hongfang Wang, Alex Q. Huang, Fei Wang
    Abstract:

    This paper presents the design and development of a 4800-V, 300-A, 10-kHz scalable Power Semiconductor Switch (SPSS) based on series connecting low voltage insulated gate bipolar transistors (IGBTs). The static and dynamic voltage balance among IGBTs is achieved using a hybrid approach of active clamp circuit and an active gate control that is also effective during tail current phase. The developed SPSS derives its control Power directly from the main Power bus. Control, packaging, and thermal characteristics are an integral part of the SPSS design. From a user's standpoint, the SPSS is a three-terminal optically controlled high-Power Switch. Experimental evaluation of the prototype SPSS shows it fully achieved the design objectives. In principle, the approach can be extended to building Switches with higher voltages, currents, and Switching frequencies, or even with other types of devices than IGBTs

Fred Wang - One of the best experts on this subject based on the ideXlab platform.

  • Development of a scalable Power Semiconductor Switch (SPSS)
    Twentieth Annual IEEE Applied Power Electronics Conference and Exposition 2005. APEC 2005., 1
    Co-Authors: Hongfang Wang, Alex Q. Huang, Bin Chen, Fred Wang
    Abstract:

    High voltage IGBTs have limited Switching capabilities with maximum Switching frequency lower than 2 kHz, primarily due to their high Switching losses. Similar situation is true for other high voltage silicon bipolar Power Switches. On the other hand, lower voltage IGBTs can operate at much higher Switching frequencies. However, these IGBT'S voltage rating does not match the need for many high voltage applications. This paper discusses the design and development of a 4800 V, 300 A, 10 kHz scalable Power Semiconductor Switch (SPSS) based on series connecting IGBTs. The static and dynamic voltage balance between IGBTs are achieved using active clamp circuit and active gate control. The developed SPSS derives its control Power directly from the main Power bus. From a user's standpoint, the SPSS is a three terminal optically controlled high-Power Switch.

S K Panda - One of the best experts on this subject based on the ideXlab platform.

  • application of four Switch based three phase grid connected inverter to connect renewable energy source to a generalized unbalanced microgrid system
    IEEE Transactions on Industrial Electronics, 2013
    Co-Authors: S Dasgupta, Shanka Moha, S K Sahoo, S K Panda
    Abstract:

    In this paper, a four-Power-Semiconductor-Switch-based three-phase inverter is proposed for renewable energy source integration to a generalized microgrid system. The proposed topology b-4 of three-phase inverter is investigated to make the commercial microgrid system to be cost effective and hardware optimized. A simple sine-pulse-width-modulation-based (SPWM) control strategy is proposed for the b-4 inverter topology instead of the traditional complex four-Switch-based space vector techniques. The overall control structure is implemented using the Lyapunov function-based nonlinear controller to track the inverter current directly in the a-b-c frame so that a specific amount of active and reactive grid Power flow to the grid can be controlled in a decoupled manner along with low total harmonic distortion of grid currents in the presence of nonlinear load at the point of common coupling (PCC). A novel technique of using the spatial repetitive controller (SRC) is also proposed to eliminate the effect of midpoint voltage fluctuation of the dc link even in the case of asymmetrically split dc-link capacitors without any extra voltage or current sensors unlike conventional methods. Detailed experimental results are provided to show the efficacy of the proposed hardware system for grid-connected applications in the microgrid.