The Experts below are selected from a list of 18396 Experts worldwide ranked by ideXlab platform
Sandeep Bala - One of the best experts on this subject based on the ideXlab platform.
-
A Reliable Ultrafast Short-Circuit Protection Method for E-Mode GaN HEMT
IEEE Transactions on Power Electronics, 2020Co-Authors: He Li, Jin Wang, Ke Wang, Yousef Abdullah, Boxue Hu, Zhi Yang, Sandeep BalaAbstract:A unique three-step short-circuit Protection Method is proposed for the 650-V enhancement mode (E-mode) gallium nitride high-electron mobility transistor (GaN HEMT). This Method can quickly detect the short-circuit event, reduce gate voltage to enhance the device short-circuit capability, and turn off the device under fault after confirmation. Experimental results prove that with this Method, the short-circuit fault detection time for E-mode GaN HEMT is shortened from 2 μs to several tens of nanoseconds, and the device can be successfully protected from fatal failure under high dc bus voltage without mistriggering.
-
A Reliable Short-Circuit Protection Method with Ultra-Fast Detection for GaN based Gate Injection Transistors
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2019Co-Authors: Ke Wang, Jin Wang, Yousef M. Abdullah, Xiao Li, Diang Xing, Sandeep BalaAbstract:This paper presents a new short-circuit Protection Method developed for Gallium Nitride (GaN) gate injection transistors (GITs). The proposed Protection Method is based on ultra-fast detection of the voltage dip on the phase leg of the converter, active current clamping of the gate drive, and fault confirmation with a low pass filter based de-saturation fault detection. Thus, it achieves an ultra-fast reaction and reliable Protection for GaN GIT devices. The proposed Protection Method was experimentally validated with a 600 V rated commercial GaN GIT under single and repetitive short- circuit operations at 400 V. The total short-circuit fault response time was recorded within 224 ns, and the short-circuit energy is reduced with the ultra-fast detection and the active gate current clamping.
Kaushik Rajashekara - One of the best experts on this subject based on the ideXlab platform.
-
An Improved IGBT Short-Circuit Protection Method With Self-Adaptive Blanking Circuit Based on V CE Measurement
IEEE Transactions on Power Electronics, 2018Co-Authors: Min Chen, Dehong Xu, Xingyao Zhang, Junxiong Wu, Kaushik RajashekaraAbstract:IGBT short-circuit Protection is the key factor to improve the reliability of the power electronics system. The conventional short-circuit Protection Method based on VCE measurement detects the collector-emitter voltage of an IGBT to determine whether the IGBT short-circuit fault occurs. The blanking circuit is needed in this kind of Protection Method to avoid the false triggering of the short-circuit Protection during IGBT turn-on transient. However, this blanking circuit should be carefully designed for different types of IGBT modules. In order to make the IGBT short-circuit Protection circuit suitable for the tolerance of IGBT modules, a self-adaptive blanking circuit combined with the aforementioned short-circuit Protection Method based on VCE measurement is proposed. The proposed Method is achieved by feeding back the required minimum blanking time interval which is decided by comparing the desaturation reference voltage with the collector-emitter voltage. The short-circuit Protection delay time for the conventional circuit and the proposed circuit are compared. Experimental results are included to prove the effectiveness of the proposed circuit.
Min Chen - One of the best experts on this subject based on the ideXlab platform.
-
An Improved IGBT Short-Circuit Protection Method With Self-Adaptive Blanking Circuit Based on V CE Measurement
IEEE Transactions on Power Electronics, 2018Co-Authors: Min Chen, Dehong Xu, Xingyao Zhang, Junxiong Wu, Kaushik RajashekaraAbstract:IGBT short-circuit Protection is the key factor to improve the reliability of the power electronics system. The conventional short-circuit Protection Method based on VCE measurement detects the collector-emitter voltage of an IGBT to determine whether the IGBT short-circuit fault occurs. The blanking circuit is needed in this kind of Protection Method to avoid the false triggering of the short-circuit Protection during IGBT turn-on transient. However, this blanking circuit should be carefully designed for different types of IGBT modules. In order to make the IGBT short-circuit Protection circuit suitable for the tolerance of IGBT modules, a self-adaptive blanking circuit combined with the aforementioned short-circuit Protection Method based on VCE measurement is proposed. The proposed Method is achieved by feeding back the required minimum blanking time interval which is decided by comparing the desaturation reference voltage with the collector-emitter voltage. The short-circuit Protection delay time for the conventional circuit and the proposed circuit are compared. Experimental results are included to prove the effectiveness of the proposed circuit.
He Li - One of the best experts on this subject based on the ideXlab platform.
-
A Reliable Ultrafast Short-Circuit Protection Method for E-Mode GaN HEMT
IEEE Transactions on Power Electronics, 2020Co-Authors: He Li, Jin Wang, Ke Wang, Yousef Abdullah, Boxue Hu, Zhi Yang, Sandeep BalaAbstract:A unique three-step short-circuit Protection Method is proposed for the 650-V enhancement mode (E-mode) gallium nitride high-electron mobility transistor (GaN HEMT). This Method can quickly detect the short-circuit event, reduce gate voltage to enhance the device short-circuit capability, and turn off the device under fault after confirmation. Experimental results prove that with this Method, the short-circuit fault detection time for E-mode GaN HEMT is shortened from 2 μs to several tens of nanoseconds, and the device can be successfully protected from fatal failure under high dc bus voltage without mistriggering.
Ke Wang - One of the best experts on this subject based on the ideXlab platform.
-
A Reliable Ultrafast Short-Circuit Protection Method for E-Mode GaN HEMT
IEEE Transactions on Power Electronics, 2020Co-Authors: He Li, Jin Wang, Ke Wang, Yousef Abdullah, Boxue Hu, Zhi Yang, Sandeep BalaAbstract:A unique three-step short-circuit Protection Method is proposed for the 650-V enhancement mode (E-mode) gallium nitride high-electron mobility transistor (GaN HEMT). This Method can quickly detect the short-circuit event, reduce gate voltage to enhance the device short-circuit capability, and turn off the device under fault after confirmation. Experimental results prove that with this Method, the short-circuit fault detection time for E-mode GaN HEMT is shortened from 2 μs to several tens of nanoseconds, and the device can be successfully protected from fatal failure under high dc bus voltage without mistriggering.
-
A Reliable Short-Circuit Protection Method with Ultra-Fast Detection for GaN based Gate Injection Transistors
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2019Co-Authors: Ke Wang, Jin Wang, Yousef M. Abdullah, Xiao Li, Diang Xing, Sandeep BalaAbstract:This paper presents a new short-circuit Protection Method developed for Gallium Nitride (GaN) gate injection transistors (GITs). The proposed Protection Method is based on ultra-fast detection of the voltage dip on the phase leg of the converter, active current clamping of the gate drive, and fault confirmation with a low pass filter based de-saturation fault detection. Thus, it achieves an ultra-fast reaction and reliable Protection for GaN GIT devices. The proposed Protection Method was experimentally validated with a 600 V rated commercial GaN GIT under single and repetitive short- circuit operations at 400 V. The total short-circuit fault response time was recorded within 224 ns, and the short-circuit energy is reduced with the ultra-fast detection and the active gate current clamping.
