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D Smith - One of the best experts on this subject based on the ideXlab platform.
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effect of Proton Irradiation on algan gan high electron mobility transistor off state drain breakdown voltage
Applied Physics Letters, 2014Co-Authors: Yahsi Hwang, Shun Li, Yuehling Hsieh, Erin Patrick, Stephen J. Pearton, D SmithAbstract:The effect of Proton Irradiation on the off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates was studied by irradiating Protons from the backside of the samples through via holes fabricated directly under the active area of the HEMTs. There was no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for HEMTs irradiated with 275 keV Protons, for which the defects created by the Proton Irradiation were intentionally placed in the GaN buffer. HEMTs with defects positioned in the 2 dimensional electron gas channel region and AlGaN barrier using 330 keV Protons not only showed degradation of both drain current and extrinsic transconductance but also exhibited an improvement of the off-state drain breakdown voltage. Finite-element simulations showed the enhancement of the latter were due to a reduction in electric field strength at the gate edges by introduction of charged defects.
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enhancement of algan gan high electron mobility transistors off state drain breakdown voltage via backside Proton Irradiation
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials Processing Measurement and Phenomena, 2014Co-Authors: Shun Li, Yahsi Hwang, Yuehling Hsieh, Erin Patrick, Camilo Velez Cuervo, Stephen J. Pearton, D SmithAbstract:Proton Irradiation from the backside of the samples were employed to enhance off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates. Via holes were fabricated directly under the active area of the HEMTs by etching through the Si substrate for subsequent backside Proton Irradiation. By taking the advantage of the steep drop at the end of Proton energy loss profile, the defects created by the Proton Irradiation from the backside of the sample could be precisely placed at specific locations inside the AlGaN/GaN HEMT structure. There were no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for the irradiated AlGaN/GaN HEMTs with the Proton energy of 225 or 275 keV, for which the defects created by the Proton Irradiations were intentionally placed in the GaN buffer. HEMTs with defects placed in the two dimensional electron gas (2DEG) channel region and AlGaN barrier using 330 or 340 keV Protons not only ...
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enhancement of algan gan high electron mobility transistors off state drain breakdown voltage via backside Proton Irradiation
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials Processing Measurement and Phenomena, 2014Co-Authors: Yahsi Hwang, Yuehling Hsieh, Erin Patrick, Camilo Velez Cuervo, Stephen J. Pearton, Lei Lei, F Ren, Mark E Law, D SmithAbstract:Proton Irradiation from the backside of the samples were employed to enhance off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates. Via holes were fabricated directly under the active area of the HEMTs by etching through the Si substrate for subsequent backside Proton Irradiation. By taking the advantage of the steep drop at the end of Proton energy loss profile, the defects created by the Proton Irradiation from the backside of the sample could be precisely placed at specific locations inside the AlGaN/GaN HEMT structure. There were no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for the irradiated AlGaN/GaN HEMTs with the Proton energy of 225 or 275 keV, for which the defects created by the Proton Irradiations were intentionally placed in the GaN buffer. HEMTs with defects placed in the two dimensional electron gas (2DEG) channel region and AlGaN barrier using 330 or 340 keV Protons not only showed degradation of both drain current and extrinsic transconductance but also exhibited improvement of the off-state drain breakdown voltage. The Florida Object Oriented Device and Process Simulator Technology Computer Aided Design finite-element simulations were performed to confirm the hypothesis of a virtual gate formed around the 2DEG region to reduce the peak electric field around the gate edges and increase the off-state drain breakdown voltage.
Michael P Short - One of the best experts on this subject based on the ideXlab platform.
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Proton Irradiation decelerated intergranular corrosion of ni cr alloys in molten salt
Nature Communications, 2020Co-Authors: Weiyue Zhou, Yang Yang, Guiqiu Zheng, K B Woller, Peter W Stahle, Andrew M Minor, Michael P ShortAbstract:The effects of ionizing radiation on materials often reduce to “bad news”. Radiation damage usually leads to detrimental effects such as embrittlement, accelerated creep, phase instability, and radiation-altered corrosion. Here we report that Proton Irradiation decelerates intergranular corrosion of Ni-Cr alloys in molten fluoride salt at 650 °C. We demonstrate this by showing that the depth of intergranular voids resulting from Cr leaching into the salt is reduced by Proton Irradiation alone. Interstitial defects generated from Irradiation enhance diffusion, more rapidly replenishing corrosion-injected vacancies with alloy constituents, thus playing the crucial role in decelerating corrosion. Our results show that Irradiation can have a positive impact on materials performance, challenging our view that radiation damage usually results in negative effects. Better understanding the synergy between radiation and corrosion is necessary to deploy advanced nuclear reactors. Here, the authors contradict the misconception that radiation always results in deleterious effects and show that Proton Irradiation slows the corrosion of Ni-Cr alloys in 650 °C molten salt.
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Proton Irradiation decelerated intergranular corrosion of ni cr alloys in molten salt
arXiv: Applied Physics, 2019Co-Authors: Weiyue Zhou, Yang Yang, Guiqiu Zheng, K B Woller, Peter W Stahle, Andrew M Minor, Michael P ShortAbstract:The effects of ionizing radiation on materials often reduce to "bad news." Radiation damage usually leads to detrimental effects such as embrittlement, accelerated creep, phase instability, and radiation-altered corrosion. This last point merits special attention. Elucidating synergies between radiation and corrosion has been one of the most challenging tasks impeding the deployment of advanced reactors, stemming from the combined effects of high temperature, corrosive coolants, and intense particle fluxes. Here we report that Proton Irradiation significantly and repeatably decelerates intergranular corrosion of Ni-Cr alloys in molten fluoride salt at 650C. We demonstrate this effect by showing that the depth of intergranular voids resulting from Cr leaching into the salt is reduced by the Proton Irradiation alone. Interstitial defects generated from Proton Irradiation result in radiation-enhanced diffusion, more rapidly replenishing corrosion-injected vacancies with alloy constituents, thus playing the crucial role in decelerating corrosion. Our results show that in industrially-relevant scenarios Irradiation can have a positive impact, challenging our view that radiation damage always results in negative effects.
Yahsi Hwang - One of the best experts on this subject based on the ideXlab platform.
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effect of Proton Irradiation on algan gan high electron mobility transistor off state drain breakdown voltage
Applied Physics Letters, 2014Co-Authors: Yahsi Hwang, Shun Li, Yuehling Hsieh, Erin Patrick, Stephen J. Pearton, D SmithAbstract:The effect of Proton Irradiation on the off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates was studied by irradiating Protons from the backside of the samples through via holes fabricated directly under the active area of the HEMTs. There was no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for HEMTs irradiated with 275 keV Protons, for which the defects created by the Proton Irradiation were intentionally placed in the GaN buffer. HEMTs with defects positioned in the 2 dimensional electron gas channel region and AlGaN barrier using 330 keV Protons not only showed degradation of both drain current and extrinsic transconductance but also exhibited an improvement of the off-state drain breakdown voltage. Finite-element simulations showed the enhancement of the latter were due to a reduction in electric field strength at the gate edges by introduction of charged defects.
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enhancement of algan gan high electron mobility transistors off state drain breakdown voltage via backside Proton Irradiation
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials Processing Measurement and Phenomena, 2014Co-Authors: Shun Li, Yahsi Hwang, Yuehling Hsieh, Erin Patrick, Camilo Velez Cuervo, Stephen J. Pearton, D SmithAbstract:Proton Irradiation from the backside of the samples were employed to enhance off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates. Via holes were fabricated directly under the active area of the HEMTs by etching through the Si substrate for subsequent backside Proton Irradiation. By taking the advantage of the steep drop at the end of Proton energy loss profile, the defects created by the Proton Irradiation from the backside of the sample could be precisely placed at specific locations inside the AlGaN/GaN HEMT structure. There were no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for the irradiated AlGaN/GaN HEMTs with the Proton energy of 225 or 275 keV, for which the defects created by the Proton Irradiations were intentionally placed in the GaN buffer. HEMTs with defects placed in the two dimensional electron gas (2DEG) channel region and AlGaN barrier using 330 or 340 keV Protons not only ...
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enhancement of algan gan high electron mobility transistors off state drain breakdown voltage via backside Proton Irradiation
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials Processing Measurement and Phenomena, 2014Co-Authors: Yahsi Hwang, Yuehling Hsieh, Erin Patrick, Camilo Velez Cuervo, Stephen J. Pearton, Lei Lei, F Ren, Mark E Law, D SmithAbstract:Proton Irradiation from the backside of the samples were employed to enhance off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates. Via holes were fabricated directly under the active area of the HEMTs by etching through the Si substrate for subsequent backside Proton Irradiation. By taking the advantage of the steep drop at the end of Proton energy loss profile, the defects created by the Proton Irradiation from the backside of the sample could be precisely placed at specific locations inside the AlGaN/GaN HEMT structure. There were no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for the irradiated AlGaN/GaN HEMTs with the Proton energy of 225 or 275 keV, for which the defects created by the Proton Irradiations were intentionally placed in the GaN buffer. HEMTs with defects placed in the two dimensional electron gas (2DEG) channel region and AlGaN barrier using 330 or 340 keV Protons not only showed degradation of both drain current and extrinsic transconductance but also exhibited improvement of the off-state drain breakdown voltage. The Florida Object Oriented Device and Process Simulator Technology Computer Aided Design finite-element simulations were performed to confirm the hypothesis of a virtual gate formed around the 2DEG region to reduce the peak electric field around the gate edges and increase the off-state drain breakdown voltage.
Erin Patrick - One of the best experts on this subject based on the ideXlab platform.
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enhancement of algan gan high electron mobility transistor off state drain breakdown voltage via backside Proton Irradiation
Proceedings of SPIE, 2015Co-Authors: Ya His Hwang, Stephen J. Pearton, Erin PatrickAbstract:Proton Irradiation from the backside of the samples were employed to enhance off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates. Via holes were fabricated directly under the active area of the HEMTs by etching through the Si substrate for subsequent backside Proton Irradiation. By taking the advantage of the steep drop at the end of Proton energy loss profile, the defects created by the Proton Irradiation from the backside of the sample could be precisely placed at specific locations inside the AlGaN/GaN HEMT structure. There were no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for the irradiated AlGaN/GaN HEMTs with the Proton energy of 225 or 275 keV, for which the defects created by the Proton Irradiations were intentionally placed in the GaN buffer. HEMTs with defects placed in the 2 dimensional electron gas (2DEG) channel region and AlGaN barrier using 330 or 340 keV Protons not only showed degradation of drain current, but also exhibited improvement of the off-state drain breakdown voltage. FLOODS TCAD finite-element simulations were performed to confirm the hypothesis of a virtual gate formed around the 2DEG region to reduce the peak electric field around the gate edges and increase the off-state drain breakdown voltage.
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effect of Proton Irradiation on algan gan high electron mobility transistor off state drain breakdown voltage
Applied Physics Letters, 2014Co-Authors: Yahsi Hwang, Shun Li, Yuehling Hsieh, Erin Patrick, Stephen J. Pearton, D SmithAbstract:The effect of Proton Irradiation on the off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates was studied by irradiating Protons from the backside of the samples through via holes fabricated directly under the active area of the HEMTs. There was no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for HEMTs irradiated with 275 keV Protons, for which the defects created by the Proton Irradiation were intentionally placed in the GaN buffer. HEMTs with defects positioned in the 2 dimensional electron gas channel region and AlGaN barrier using 330 keV Protons not only showed degradation of both drain current and extrinsic transconductance but also exhibited an improvement of the off-state drain breakdown voltage. Finite-element simulations showed the enhancement of the latter were due to a reduction in electric field strength at the gate edges by introduction of charged defects.
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enhancement of algan gan high electron mobility transistors off state drain breakdown voltage via backside Proton Irradiation
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials Processing Measurement and Phenomena, 2014Co-Authors: Shun Li, Yahsi Hwang, Yuehling Hsieh, Erin Patrick, Camilo Velez Cuervo, Stephen J. Pearton, D SmithAbstract:Proton Irradiation from the backside of the samples were employed to enhance off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates. Via holes were fabricated directly under the active area of the HEMTs by etching through the Si substrate for subsequent backside Proton Irradiation. By taking the advantage of the steep drop at the end of Proton energy loss profile, the defects created by the Proton Irradiation from the backside of the sample could be precisely placed at specific locations inside the AlGaN/GaN HEMT structure. There were no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for the irradiated AlGaN/GaN HEMTs with the Proton energy of 225 or 275 keV, for which the defects created by the Proton Irradiations were intentionally placed in the GaN buffer. HEMTs with defects placed in the two dimensional electron gas (2DEG) channel region and AlGaN barrier using 330 or 340 keV Protons not only ...
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enhancement of algan gan high electron mobility transistors off state drain breakdown voltage via backside Proton Irradiation
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials Processing Measurement and Phenomena, 2014Co-Authors: Yahsi Hwang, Yuehling Hsieh, Erin Patrick, Camilo Velez Cuervo, Stephen J. Pearton, Lei Lei, F Ren, Mark E Law, D SmithAbstract:Proton Irradiation from the backside of the samples were employed to enhance off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates. Via holes were fabricated directly under the active area of the HEMTs by etching through the Si substrate for subsequent backside Proton Irradiation. By taking the advantage of the steep drop at the end of Proton energy loss profile, the defects created by the Proton Irradiation from the backside of the sample could be precisely placed at specific locations inside the AlGaN/GaN HEMT structure. There were no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for the irradiated AlGaN/GaN HEMTs with the Proton energy of 225 or 275 keV, for which the defects created by the Proton Irradiations were intentionally placed in the GaN buffer. HEMTs with defects placed in the two dimensional electron gas (2DEG) channel region and AlGaN barrier using 330 or 340 keV Protons not only showed degradation of both drain current and extrinsic transconductance but also exhibited improvement of the off-state drain breakdown voltage. The Florida Object Oriented Device and Process Simulator Technology Computer Aided Design finite-element simulations were performed to confirm the hypothesis of a virtual gate formed around the 2DEG region to reduce the peak electric field around the gate edges and increase the off-state drain breakdown voltage.
Andrew M Minor - One of the best experts on this subject based on the ideXlab platform.
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Proton Irradiation decelerated intergranular corrosion of ni cr alloys in molten salt
Nature Communications, 2020Co-Authors: Weiyue Zhou, Yang Yang, Guiqiu Zheng, K B Woller, Peter W Stahle, Andrew M Minor, Michael P ShortAbstract:The effects of ionizing radiation on materials often reduce to “bad news”. Radiation damage usually leads to detrimental effects such as embrittlement, accelerated creep, phase instability, and radiation-altered corrosion. Here we report that Proton Irradiation decelerates intergranular corrosion of Ni-Cr alloys in molten fluoride salt at 650 °C. We demonstrate this by showing that the depth of intergranular voids resulting from Cr leaching into the salt is reduced by Proton Irradiation alone. Interstitial defects generated from Irradiation enhance diffusion, more rapidly replenishing corrosion-injected vacancies with alloy constituents, thus playing the crucial role in decelerating corrosion. Our results show that Irradiation can have a positive impact on materials performance, challenging our view that radiation damage usually results in negative effects. Better understanding the synergy between radiation and corrosion is necessary to deploy advanced nuclear reactors. Here, the authors contradict the misconception that radiation always results in deleterious effects and show that Proton Irradiation slows the corrosion of Ni-Cr alloys in 650 °C molten salt.
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Proton Irradiation decelerated intergranular corrosion of ni cr alloys in molten salt
arXiv: Applied Physics, 2019Co-Authors: Weiyue Zhou, Yang Yang, Guiqiu Zheng, K B Woller, Peter W Stahle, Andrew M Minor, Michael P ShortAbstract:The effects of ionizing radiation on materials often reduce to "bad news." Radiation damage usually leads to detrimental effects such as embrittlement, accelerated creep, phase instability, and radiation-altered corrosion. This last point merits special attention. Elucidating synergies between radiation and corrosion has been one of the most challenging tasks impeding the deployment of advanced reactors, stemming from the combined effects of high temperature, corrosive coolants, and intense particle fluxes. Here we report that Proton Irradiation significantly and repeatably decelerates intergranular corrosion of Ni-Cr alloys in molten fluoride salt at 650C. We demonstrate this effect by showing that the depth of intergranular voids resulting from Cr leaching into the salt is reduced by the Proton Irradiation alone. Interstitial defects generated from Proton Irradiation result in radiation-enhanced diffusion, more rapidly replenishing corrosion-injected vacancies with alloy constituents, thus playing the crucial role in decelerating corrosion. Our results show that in industrially-relevant scenarios Irradiation can have a positive impact, challenging our view that radiation damage always results in negative effects.
