The Experts below are selected from a list of 21 Experts worldwide ranked by ideXlab platform
Stefanos Manias - One of the best experts on this subject based on the ideXlab platform.
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IECON - Assessment of the reverse operational characteristics of SiC JFETs in a diode-less inverter
IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society, 2013Co-Authors: Georgios Kampitsis, P. Stefas, N. Chrysogelos, Stavros Papathanassiou, Stefanos ManiasAbstract:In this paper, a thorough analysis of the reverse conduction characteristics of vertical trench (VT) Silicon Carbide (SiC) junction field effect transistors (JFETs) is performed. While these power devices do not encompass a body diode, traditionally present in conventional Silicon (Si) based semiconductors, such as the metal-oxide semiconductor field-effect transistors (MOSFETs), they exhibit notable reverse properties such that an external antiparallel diode can be considered redundant in most power converter applications. Both enhancement mode and depletion mode SiC JFETs are examined in terms of static reverse operation. Their performance is initially validated through simulation testing by constructing new SiC JFET Models in Pspice Model Editor. The theoretical and simulation results are confirmed via experimental testing in a three phase voltage source inverter with and without antiparallel SiC diodes. When a gate drive that protects the semiconductor during reverse operation, while presenting great switching and forward conduction characteristics, is introduced, the power converter's overall performance is investigated paying particular attention to power losses during the dead time interval.
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Assessment of the reverse operational characteristics of SiC JFETs in a diode-less inverter
IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society, 2013Co-Authors: Georgios Kampitsis, P. Stefas, N. Chrysogelos, Stavros Papathanassiou, Stefanos ManiasAbstract:In this paper, a thorough analysis of the reverse conduction characteristics of vertical trench (VT) Silicon Carbide (SiC) junction field effect transistors (JFETs) is performed. While these power devices do not encompass a body diode, traditionally present in conventional Silicon (Si) based semiconductors, such as the metal-oxide semiconductor field-effect transistors (MOSFETs), they exhibit notable reverse properties such that an external antiparallel diode can be considered redundant in most power converter applications. Both enhancement mode and depletion mode SiC JFETs are examined in terms of static reverse operation. Their performance is initially validated through simulation testing by constructing new SiC JFET Models in Pspice Model Editor. The theoretical and simulation results are confirmed via experimental testing in a three phase voltage source inverter with and without antiparallel SiC diodes. When a gate drive that protects the semiconductor during reverse operation, while presenting great switching and forward conduction characteristics, is introduced, the power converter's overall performance is investigated paying particular attention to power losses during the dead time interval.
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Performance consideration of an AC coupled gate drive circuit with forward bias for normally-on SiC JFETs
2013 IEEE Energy Conversion Congress and Exposition, 2013Co-Authors: Georgios Kampitsis, Stavros Papathanassiou, Stefanos ManiasAbstract:In this paper, an ac coupled driving circuit for normally-on Silicon Carbide (SiC) Junction Field Effect Transistors (JFETs) is proposed, utilizing forward bias during conduction state. Such driving circuits constitute the basic structure of a grid connected, 5kW photovoltaic (PV) inverter. The prototype is investigated in terms of efficiency, considering both conduction and switching losses and the advantages over a conventional zero biased gate drive are recorded. The adequacy of the particular circuit to efficiently drive a normally-off SiC JFET is also investigated. Simulation studies are carried out by developing new depletion mode (DM) as well as enhancement mode (EM) vertical trench (VT) SiC JFET Models in Pspice Model Editor. The promising theoretical and simulation results are validated via experimental testing in a double pulse tester (DPT). Both DM and EM power devices are tested in a bridge leg configuration and their performance is evaluated, having as a reference point the operational characteristics of a conventional Silicon (Si) based IGBT power switch. Ultimately, a reduction of over 18% in conduction losses is obtained through forward biasing a DM SiC JFET, while switching losses less than 500 μJ are achieved over one switching cycle when operating at 600 V, 20 A.
Georgios Kampitsis - One of the best experts on this subject based on the ideXlab platform.
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IECON - Assessment of the reverse operational characteristics of SiC JFETs in a diode-less inverter
IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society, 2013Co-Authors: Georgios Kampitsis, P. Stefas, N. Chrysogelos, Stavros Papathanassiou, Stefanos ManiasAbstract:In this paper, a thorough analysis of the reverse conduction characteristics of vertical trench (VT) Silicon Carbide (SiC) junction field effect transistors (JFETs) is performed. While these power devices do not encompass a body diode, traditionally present in conventional Silicon (Si) based semiconductors, such as the metal-oxide semiconductor field-effect transistors (MOSFETs), they exhibit notable reverse properties such that an external antiparallel diode can be considered redundant in most power converter applications. Both enhancement mode and depletion mode SiC JFETs are examined in terms of static reverse operation. Their performance is initially validated through simulation testing by constructing new SiC JFET Models in Pspice Model Editor. The theoretical and simulation results are confirmed via experimental testing in a three phase voltage source inverter with and without antiparallel SiC diodes. When a gate drive that protects the semiconductor during reverse operation, while presenting great switching and forward conduction characteristics, is introduced, the power converter's overall performance is investigated paying particular attention to power losses during the dead time interval.
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Assessment of the reverse operational characteristics of SiC JFETs in a diode-less inverter
IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society, 2013Co-Authors: Georgios Kampitsis, P. Stefas, N. Chrysogelos, Stavros Papathanassiou, Stefanos ManiasAbstract:In this paper, a thorough analysis of the reverse conduction characteristics of vertical trench (VT) Silicon Carbide (SiC) junction field effect transistors (JFETs) is performed. While these power devices do not encompass a body diode, traditionally present in conventional Silicon (Si) based semiconductors, such as the metal-oxide semiconductor field-effect transistors (MOSFETs), they exhibit notable reverse properties such that an external antiparallel diode can be considered redundant in most power converter applications. Both enhancement mode and depletion mode SiC JFETs are examined in terms of static reverse operation. Their performance is initially validated through simulation testing by constructing new SiC JFET Models in Pspice Model Editor. The theoretical and simulation results are confirmed via experimental testing in a three phase voltage source inverter with and without antiparallel SiC diodes. When a gate drive that protects the semiconductor during reverse operation, while presenting great switching and forward conduction characteristics, is introduced, the power converter's overall performance is investigated paying particular attention to power losses during the dead time interval.
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Performance consideration of an AC coupled gate drive circuit with forward bias for normally-on SiC JFETs
2013 IEEE Energy Conversion Congress and Exposition, 2013Co-Authors: Georgios Kampitsis, Stavros Papathanassiou, Stefanos ManiasAbstract:In this paper, an ac coupled driving circuit for normally-on Silicon Carbide (SiC) Junction Field Effect Transistors (JFETs) is proposed, utilizing forward bias during conduction state. Such driving circuits constitute the basic structure of a grid connected, 5kW photovoltaic (PV) inverter. The prototype is investigated in terms of efficiency, considering both conduction and switching losses and the advantages over a conventional zero biased gate drive are recorded. The adequacy of the particular circuit to efficiently drive a normally-off SiC JFET is also investigated. Simulation studies are carried out by developing new depletion mode (DM) as well as enhancement mode (EM) vertical trench (VT) SiC JFET Models in Pspice Model Editor. The promising theoretical and simulation results are validated via experimental testing in a double pulse tester (DPT). Both DM and EM power devices are tested in a bridge leg configuration and their performance is evaluated, having as a reference point the operational characteristics of a conventional Silicon (Si) based IGBT power switch. Ultimately, a reduction of over 18% in conduction losses is obtained through forward biasing a DM SiC JFET, while switching losses less than 500 μJ are achieved over one switching cycle when operating at 600 V, 20 A.
Stavros Papathanassiou - One of the best experts on this subject based on the ideXlab platform.
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IECON - Assessment of the reverse operational characteristics of SiC JFETs in a diode-less inverter
IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society, 2013Co-Authors: Georgios Kampitsis, P. Stefas, N. Chrysogelos, Stavros Papathanassiou, Stefanos ManiasAbstract:In this paper, a thorough analysis of the reverse conduction characteristics of vertical trench (VT) Silicon Carbide (SiC) junction field effect transistors (JFETs) is performed. While these power devices do not encompass a body diode, traditionally present in conventional Silicon (Si) based semiconductors, such as the metal-oxide semiconductor field-effect transistors (MOSFETs), they exhibit notable reverse properties such that an external antiparallel diode can be considered redundant in most power converter applications. Both enhancement mode and depletion mode SiC JFETs are examined in terms of static reverse operation. Their performance is initially validated through simulation testing by constructing new SiC JFET Models in Pspice Model Editor. The theoretical and simulation results are confirmed via experimental testing in a three phase voltage source inverter with and without antiparallel SiC diodes. When a gate drive that protects the semiconductor during reverse operation, while presenting great switching and forward conduction characteristics, is introduced, the power converter's overall performance is investigated paying particular attention to power losses during the dead time interval.
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Assessment of the reverse operational characteristics of SiC JFETs in a diode-less inverter
IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society, 2013Co-Authors: Georgios Kampitsis, P. Stefas, N. Chrysogelos, Stavros Papathanassiou, Stefanos ManiasAbstract:In this paper, a thorough analysis of the reverse conduction characteristics of vertical trench (VT) Silicon Carbide (SiC) junction field effect transistors (JFETs) is performed. While these power devices do not encompass a body diode, traditionally present in conventional Silicon (Si) based semiconductors, such as the metal-oxide semiconductor field-effect transistors (MOSFETs), they exhibit notable reverse properties such that an external antiparallel diode can be considered redundant in most power converter applications. Both enhancement mode and depletion mode SiC JFETs are examined in terms of static reverse operation. Their performance is initially validated through simulation testing by constructing new SiC JFET Models in Pspice Model Editor. The theoretical and simulation results are confirmed via experimental testing in a three phase voltage source inverter with and without antiparallel SiC diodes. When a gate drive that protects the semiconductor during reverse operation, while presenting great switching and forward conduction characteristics, is introduced, the power converter's overall performance is investigated paying particular attention to power losses during the dead time interval.
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Performance consideration of an AC coupled gate drive circuit with forward bias for normally-on SiC JFETs
2013 IEEE Energy Conversion Congress and Exposition, 2013Co-Authors: Georgios Kampitsis, Stavros Papathanassiou, Stefanos ManiasAbstract:In this paper, an ac coupled driving circuit for normally-on Silicon Carbide (SiC) Junction Field Effect Transistors (JFETs) is proposed, utilizing forward bias during conduction state. Such driving circuits constitute the basic structure of a grid connected, 5kW photovoltaic (PV) inverter. The prototype is investigated in terms of efficiency, considering both conduction and switching losses and the advantages over a conventional zero biased gate drive are recorded. The adequacy of the particular circuit to efficiently drive a normally-off SiC JFET is also investigated. Simulation studies are carried out by developing new depletion mode (DM) as well as enhancement mode (EM) vertical trench (VT) SiC JFET Models in Pspice Model Editor. The promising theoretical and simulation results are validated via experimental testing in a double pulse tester (DPT). Both DM and EM power devices are tested in a bridge leg configuration and their performance is evaluated, having as a reference point the operational characteristics of a conventional Silicon (Si) based IGBT power switch. Ultimately, a reduction of over 18% in conduction losses is obtained through forward biasing a DM SiC JFET, while switching losses less than 500 μJ are achieved over one switching cycle when operating at 600 V, 20 A.
Dennis Fitzpatrick - One of the best experts on this subject based on the ideXlab platform.
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Adding and Creating Pspice Models
Analog Design and Simulation using OrCAD Capture and PSpice, 2020Co-Authors: Dennis FitzpatrickAbstract:Pspice Models can be created and edited in the Pspice Model Editor. When users edit a Pspice part from Capture, a copy of the Pspice Model is created in a library file, which will have the same name as the project. This is so that the original Pspice Model does not get modified. The copied library is written to the project file and can be seen as one of the configured Pspice libraries in the Project Manager. For Pspice simulation, a Capture part needs to have four specific properties attached. These are the implementation: name of the Model; implementation path: left blank as Model is searched for in the configured libraries in the simulation profile; implementation type: Pspice Model; and Pspice template: provides the Capture part interface to the Model or subcircuit. The Model Editor is used to view text Model definitions and to display graphical Model characteristics and Model parameters. The Model Editor has the facility to make a copy of an existing Pspice Model from an existing library. The Model Import Wizard, File > Import Wizard [Capture], allows one to view and select, or replace Capture parts (symbols) for the Models in a library one at a time. The Model Editor is useful for displaying the characteristic curves for Models, especially if the Pspice Model has been downloaded from a vendor's website. There is an encryption facility in the Model Editor that allows one to encrypt Pspice Models or libraries such that the Models can be used for simulation but the Model definitions cannot be viewed.
P. Stefas - One of the best experts on this subject based on the ideXlab platform.
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IECON - Assessment of the reverse operational characteristics of SiC JFETs in a diode-less inverter
IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society, 2013Co-Authors: Georgios Kampitsis, P. Stefas, N. Chrysogelos, Stavros Papathanassiou, Stefanos ManiasAbstract:In this paper, a thorough analysis of the reverse conduction characteristics of vertical trench (VT) Silicon Carbide (SiC) junction field effect transistors (JFETs) is performed. While these power devices do not encompass a body diode, traditionally present in conventional Silicon (Si) based semiconductors, such as the metal-oxide semiconductor field-effect transistors (MOSFETs), they exhibit notable reverse properties such that an external antiparallel diode can be considered redundant in most power converter applications. Both enhancement mode and depletion mode SiC JFETs are examined in terms of static reverse operation. Their performance is initially validated through simulation testing by constructing new SiC JFET Models in Pspice Model Editor. The theoretical and simulation results are confirmed via experimental testing in a three phase voltage source inverter with and without antiparallel SiC diodes. When a gate drive that protects the semiconductor during reverse operation, while presenting great switching and forward conduction characteristics, is introduced, the power converter's overall performance is investigated paying particular attention to power losses during the dead time interval.
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Assessment of the reverse operational characteristics of SiC JFETs in a diode-less inverter
IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society, 2013Co-Authors: Georgios Kampitsis, P. Stefas, N. Chrysogelos, Stavros Papathanassiou, Stefanos ManiasAbstract:In this paper, a thorough analysis of the reverse conduction characteristics of vertical trench (VT) Silicon Carbide (SiC) junction field effect transistors (JFETs) is performed. While these power devices do not encompass a body diode, traditionally present in conventional Silicon (Si) based semiconductors, such as the metal-oxide semiconductor field-effect transistors (MOSFETs), they exhibit notable reverse properties such that an external antiparallel diode can be considered redundant in most power converter applications. Both enhancement mode and depletion mode SiC JFETs are examined in terms of static reverse operation. Their performance is initially validated through simulation testing by constructing new SiC JFET Models in Pspice Model Editor. The theoretical and simulation results are confirmed via experimental testing in a three phase voltage source inverter with and without antiparallel SiC diodes. When a gate drive that protects the semiconductor during reverse operation, while presenting great switching and forward conduction characteristics, is introduced, the power converter's overall performance is investigated paying particular attention to power losses during the dead time interval.
