The Experts below are selected from a list of 360 Experts worldwide ranked by ideXlab platform
Ruonan Han - One of the best experts on this subject based on the ideXlab platform.
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high Power radiation at 1 thz in silicon a fully scalable array using a multi functional radiating mesh structure
IEEE Journal of Solid-state Circuits, 2018Co-Authors: Mehmet Kaynak, Ruonan HanAbstract:We introduce a highly scalable architecture of coherent harmonic oscillator array for high-Power and narrow-beamwidth radiation in the mid-terahertz (THz) band. The array consists of horizontal and vertical slotlines (i.e., slot mesh) located at the boundaries between oscillator elements. Through such a structure, the following operations are achieved simultaneously: 1) maximum oscillation Power at fundamental frequency $f_{0}$ ; 2) precise synchronization of the oscillation phase among elements; 3) cancellation of the radiation at $f_{0}$ , $2f_{0}$ , and $3f_{0}$ ; and 4) efficient radiation and Power combining at $4f_{0}$ . The resultant compact design fits into the optimal radiator pitch of $\lambda _{4f_{0}}/2$ (half wavelength) for the suppression of sidelobes, hence enabling implementation of high-density THz arrays. In particular, an array prototype of 42 coherent radiators (with 91 resonant antennas) at 1 THz is presented using the IHP S13G2 130-nm SiGe process. The chip occupies only 1-mm2 area and consumes 1.1 W of dc Power. The measured total Radiated Power and the effective isotropically Radiated Power are 80 $\mu \text{W}$ and 13 dBm, respectively.
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fully scalable 2d thz radiating array a 42 element source in 130 nm sige with 80 µw total Radiated Power at 1 01 thz
Radio Frequency Integrated Circuits Symposium, 2017Co-Authors: Ruonan HanAbstract:This paper presents a 1-THz radiating array using IHP 130-nm SiGe process. It is based on a highly-scalable 2D structure that uses a square grid of slots to simultaneously (1) maximize and synchronize the fundamental oscillation (ƒ 0 =250 GHz) and 4th-harmonic generation (4ƒ 0 =1 THz) of a large array of transistors, (2) synthesize standing-wave patterns with near-field cancellation at ƒ 0 , 2ƒ 0 and 3ƒ 0 and efficient radiation at 4ƒ 0 . The compact design enables implementation of 42 coherent radiators on a 1-mm2 area. The chip consumes 1.1-W DC Power and generates 80-µW total Radiated Power with 13-dBm EIRP.
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17 6 rapid and energy efficient molecular sensing using dual mm wave combs in 65nm cmos a 220 to 320ghz spectrometer with 5 2mw Radiated Power and 14 6 to 19 5db noise figure
International Solid-State Circuits Conference, 2017Co-Authors: Cheng Wang, Ruonan HanAbstract:Millimeter-wave/terahertz rotational spectroscopy offers ultra-wide-detection range of gas molecules for chemical and biomedical sensing. Therefore, wideband, energy-efficient, and fast-scanning CMOS spectrometers are in demand. Spectrometers using narrow-pulse sources and electromagnetic scattering [1] are broadband, but their resolutions do not meet the requirement (<10kHz) of the absolute specificity. Alternatively, a scheme using a single tunable tone exhibits significant trade-off between bandwidth and performance. The 245GHz spectrometer in [2] presents 4mW Radiated Power, but only has a 14GHz bandwidth. In [3] and [4], broader bandwidths are achieved at the expense of degraded Radiated Power (0.1mW) and noise figure (NF=18.4 to ∼23.5dB). In addition, given a typical 10kHz resolution and 1ms integration time, scanning a 100GHz bandwidth with a single tone takes as long as 3 hours. This paper reports a rapid, energy-efficient spectrometer architecture based on dual-frequency-comb scanning. A 220-to-320GHz CMOS spectrometer prototype based on this architecture is demonstrated with a total Radiated Power of 5.2mW and a NF of 14.6 to ∼19.5dB.
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a sige terahertz heterodyne imaging transmitter with 3 3 mw Radiated Power and fully integrated phase locked loop
IEEE Journal of Solid-state Circuits, 2015Co-Authors: Ruonan Han, Chen Jiang, Ali Mostajeran, Mohammad Javad Emadi, Hamidreza Aghasi, Hani Sherry, Andreia Cathelin, Ehsan AfshariAbstract:A high-Power 320 GHz transmitter using 130 nm SiGe BiCMOS technology ( $f_{T}/f_{\max} =$ 220/280 GHz) is reported. This transmitter consists of a 4 × 4 array of radiators based on coupled harmonic oscillators. By incorporating a signal filter structure called return-path gap coupler into a differential self-feeding oscillator, the proposed 320 GHz radiator simultaneously maximizes the fundamental oscillation Power, harmonic generation, as well as on-chip radiation. To facilitate the TX-RX synchronization of a future terahertz (THz) heterodyne imaging chipset, a fully-integrated phase-locked loop (PLL) is also implemented in the transmitter. Such on-chip phase-locking capability is the first demonstration for all THz radiators in silicon. In the far-field measurement, the total Radiated Power and EIRP of the chip is 3.3 mW and 22.5 dBm, respectively. The transmitter consumes 610 mW DC Power, which leads to a DC-to-THz radiation efficiency of 0.54%. To the authors' best knowledge, this work presents the highest Radiated Power and DC-to-THz radiation efficiency in silicon-based THz radiating sources.
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25 5 a 320ghz phase locked transmitter with 3 3mw Radiated Power and 22 5dbm eirp for heterodyne thz imaging systems
International Solid-State Circuits Conference, 2015Co-Authors: Ruonan Han, Chen Jiang, Ali Mostajeran, Hamidreza Aghasi, Hani Sherry, Andreia Cathelin, Mohammad Emadi, Ehsan AfshariAbstract:Non-ionizing terahertz imaging using solid-state integrated electronics has been gaining increasing attention over the past few years. However, there are currently several factors that deter the implementations of fully-integrated imaging systems. Due to the lack of low-noise amplification above f max , the sensitivity of THz pixels on silicon cannot match that of its mm-Wave or light-wave counterparts. This, combined with the focal-plane array configuration adopted by previous sensors, requires exceedingly large Power for the illumination sources. Previous works on silicon have demonstrated 1mW radiation [1,3]; but higher Power, as well as energy efficiency, are needed for a practical imaging system. In addition, heterodyne imaging scheme was demonstrated to be very effective in enhancing detection sensitivity [4]. Due to the preservation of phase information, it also enables digital beam forming with a small number of receiver units. This however requires phase locking between the THz source and receiver LO with a small frequency offset (IF<1GHz). In [5], a 300GHz PLL is reported with probed output. In this paper, a 320GHz transmitter using SiGe HBTs is presented (Fig. 25.5.1). Combining 16 coherent radiators, this work achieves 3.3mW Radiated Power with 0.54% DC-RF efficiency, which are the highest among state-of-the-art silicon THz radiators shown in the comparison table in Fig. 25.5.6. Meanwhile, the output beam is phase-locked by a fully-integrated PLL, which enables high-performance heterodyne imaging systems.
Ehsan Afshari - One of the best experts on this subject based on the ideXlab platform.
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a 308 317ghz source with 4 6mw peak Radiated Power and on chip frequency stabilization feedback in 0 13µm bicmos
Radio Frequency Integrated Circuits Symposium, 2018Co-Authors: Chen Jiang, Andreia Cathelin, Mohammed Aseeri, Ehsan AfshariAbstract:In this paper, a 308-317GHz radiating source is presented. The output frequency of the 6×4 radiator array is stabilized with an entirely on-chip frequency detection and feedback mechanism realized mainly by passive EM structures. This feedback mechanism eliminates the need for both frequency dividers and the off-chip reference, achieving much lower system cost and Power consumption. Fabricated using a 0.13µm BiCMOS process, the proposed source achieves a peak Radiated Power and EIRP of 4.6mW and 24.7dBm, respectively, with a total de Power consumption of 1.18W. The frequency tuning range is larger than 2.7%. The measured phase noise at IMHz offset is −80.1dBc/Hz.
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a sige terahertz heterodyne imaging transmitter with 3 3 mw Radiated Power and fully integrated phase locked loop
IEEE Journal of Solid-state Circuits, 2015Co-Authors: Ruonan Han, Chen Jiang, Ali Mostajeran, Mohammad Javad Emadi, Hamidreza Aghasi, Hani Sherry, Andreia Cathelin, Ehsan AfshariAbstract:A high-Power 320 GHz transmitter using 130 nm SiGe BiCMOS technology ( $f_{T}/f_{\max} =$ 220/280 GHz) is reported. This transmitter consists of a 4 × 4 array of radiators based on coupled harmonic oscillators. By incorporating a signal filter structure called return-path gap coupler into a differential self-feeding oscillator, the proposed 320 GHz radiator simultaneously maximizes the fundamental oscillation Power, harmonic generation, as well as on-chip radiation. To facilitate the TX-RX synchronization of a future terahertz (THz) heterodyne imaging chipset, a fully-integrated phase-locked loop (PLL) is also implemented in the transmitter. Such on-chip phase-locking capability is the first demonstration for all THz radiators in silicon. In the far-field measurement, the total Radiated Power and EIRP of the chip is 3.3 mW and 22.5 dBm, respectively. The transmitter consumes 610 mW DC Power, which leads to a DC-to-THz radiation efficiency of 0.54%. To the authors' best knowledge, this work presents the highest Radiated Power and DC-to-THz radiation efficiency in silicon-based THz radiating sources.
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25 5 a 320ghz phase locked transmitter with 3 3mw Radiated Power and 22 5dbm eirp for heterodyne thz imaging systems
International Solid-State Circuits Conference, 2015Co-Authors: Ruonan Han, Chen Jiang, Ali Mostajeran, Hamidreza Aghasi, Hani Sherry, Andreia Cathelin, Mohammad Emadi, Ehsan AfshariAbstract:Non-ionizing terahertz imaging using solid-state integrated electronics has been gaining increasing attention over the past few years. However, there are currently several factors that deter the implementations of fully-integrated imaging systems. Due to the lack of low-noise amplification above f max , the sensitivity of THz pixels on silicon cannot match that of its mm-Wave or light-wave counterparts. This, combined with the focal-plane array configuration adopted by previous sensors, requires exceedingly large Power for the illumination sources. Previous works on silicon have demonstrated 1mW radiation [1,3]; but higher Power, as well as energy efficiency, are needed for a practical imaging system. In addition, heterodyne imaging scheme was demonstrated to be very effective in enhancing detection sensitivity [4]. Due to the preservation of phase information, it also enables digital beam forming with a small number of receiver units. This however requires phase locking between the THz source and receiver LO with a small frequency offset (IF<1GHz). In [5], a 300GHz PLL is reported with probed output. In this paper, a 320GHz transmitter using SiGe HBTs is presented (Fig. 25.5.1). Combining 16 coherent radiators, this work achieves 3.3mW Radiated Power with 0.54% DC-RF efficiency, which are the highest among state-of-the-art silicon THz radiators shown in the comparison table in Fig. 25.5.6. Meanwhile, the output beam is phase-locked by a fully-integrated PLL, which enables high-performance heterodyne imaging systems.
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a 260ghz broadband source with 1 1mw continuous wave Radiated Power and eirp of 15 7dbm in 65nm cmos
International Solid-State Circuits Conference, 2013Co-Authors: Ruonan Han, Ehsan AfshariAbstract:Terahertz spectroscopy using silicon technology is gaining attraction for future portable and affordable material identification equipment. To do this, a broadband THz radiation source is critical. Unfortunately, the bandwidth of the prior CMOS works is not sufficient. In [1], the 300GHz signal source achieves 4.5% tuning range by changing the coupling among multiple oscillators. In [2], the DAR array has 3% tuning range with radiation capability. Alternative to the continuous device-tuning method, THz time-domain spectroscopy utilizing the broadband spectrum of picosecond pulses is widely used in the optics community [3]. In this paper, a high-Power pulse-based sub-millimeter-Wave radiation source using 65nm bulk CMOS technology is reported. The architecture of this transmitter is shown in Fig. 8.2.1, where four differential core oscillator pairs are mutually coupled through four quadrature oscillators. Each core oscillator pair generates 2nd-harmonic signals at 260GHz that are Power-combined after radiating through eight on-chip antennas. Four shunt switches, controlled by narrow pulses (width≈45ps) modulate the radiation. The pulses are generated by local digital circuit blocks with programmable repetition rate up to 5GHz. This way, the broadband spectrum of the pulses is upconverted to the carrier frequency of 260GHz. Without modulation, the chip achieves a continuous-wave Radiated Power of 1.1mW. Under modulation, the measured bandwidth of the source is 24.7GHz, which makes it suitable for many FTIR-based THz spectrometers. In addition, if the switches are modulated by digital data, this chip can also be used as a transmitter for sub-millimeter/THz wireless communications.
Christopher D Wilson - One of the best experts on this subject based on the ideXlab platform.
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application of autocorrelation principles to determine Radiated Power of a line source radiator with a cosine on a pedestal distribution
International Symposium on Antennas and Propagation, 2016Co-Authors: Christopher D Wilson, Jeffrey L YoungAbstract:Autocorrelation principles are applied to the problem of line source radiation. Consequently, the Radiated Power can be determined directly from the current distribution without a priori knowledge of the Radiated pattern. A summary of the methodology is presented along with results previously obtained for the cosine and uniform distributions. The methodology is then applied to the cosine-on-a-pedestal distribution to obtain a heretofore unpublished closed-form expression for the Radiated Power. The expression is validated through comparison to the cosine and uniform distribution results. Additionally, validation is obtained through numerical integration of the pattern to determine the Radiated Power.
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a general theory to determine the exact Radiated Power directivity and radiation resistance of a line source radiator
IEEE Transactions on Antennas and Propagation, 2016Co-Authors: Jeffrey L Young, Christopher D WilsonAbstract:Instead of integrating the Power pattern function directly and discounting the effect of the element factor to find the total Radiated Power of a line source, we show herein that an exact analytical expression for the Radiated Power can be obtained by singular knowledge of the source’s current distribution. The expression is found by using the Fourier principles associated with convolution integrals, autocorrelation integrals, Parseval’s Identity, and the Helmholtz operator in one dimension. Knowledge of the exact Radiated Power is used to find the expressions for directivity and radiation resistance. Furthermore, we show that the efficiency of the line source is explicitly a function of the relative proportion of two autocorrelation integrals. This newly developed theory is validated by considering large and small argument approximations in which closed-form results are readily known. Additional validation is obtained by comparing the exact result with the data obtained from numerical integration of the Power pattern function. Examples associated with the half-wave dipole, cosine distribution, cosine-squared distribution, generalized dipole, triangular distribution, and the uniform distribution are provided. Other than the half-wave and generalized dipole solutions, we believe that the expressions obtained in this investigation have never been reported in the open literature. This is particularly true for the uniform line source in which the classical asymptotic result for the directivity (i.e., $2L/\lambda$ ) is shown to be deficient.
Ari Sihvola - One of the best experts on this subject based on the ideXlab platform.
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surface integral equation based characteristic mode formulation for penetrable bodies
IEEE Transactions on Antennas and Propagation, 2018Co-Authors: Pasi Ylaoijala, Henrik Wallen, Dimitrios C Tzarouchis, Ari SihvolaAbstract:A novel surface integral equation (SIE)-based theory of characteristic modes (TCM) formulation is proposed for homogeneous penetrable bodies. Analytical expressions for the characteristic eigenvalues are presented and good agreement between the numerical and analytical results is observed for both lossless and lossy, as well as for dielectric and magnetodielectric objects. The new formulations, without any postprocessing methods, avoid spurious modes and resonances appearing in existing SIE-based TCM formulations. For lossy objects, the obtained eigenvalues are complex. The real part of an eigenvalue is related to the ratio of the reactive and Radiated Power, as in the original TCM formulation for perfect electric conductor structures, and the imaginary part gives the ratio between the dissipated and Radiated Power.
Janusz Grzyb - One of the best experts on this subject based on the ideXlab platform.
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a 0 53 thz reconfigurable source module with up to 1 mw Radiated Power for diffuse illumination in terahertz imaging applications
IEEE Journal of Solid-state Circuits, 2014Co-Authors: Ullrich R Pfeiffer, Janusz Grzyb, Yan Zhao, Richard Al Hadi, Neelanjan Sarmah, Wolfgang Forster, H Rucker, Bernd HeinemannAbstract:This paper presents a high-Power 0.53 THz source module with programmable diversity to adjust the brightness and the direction of light to obtain the desired diffuse lighting conditions in THz imaging applications. The source module consists of a single SiGe BiCMOS chip which operates an array of 16 source-pixel incoherently. Each source pixel consists of a primary on-chip ring-antenna and two triple-push oscillators locked 180° out-of-phase. The module provides a total Radiated Power of up to 1 mW (0 dBm) with 62.5 μW (-12 dBm) per source pixel on average and an EIRP per pixel of 25 dBm. The circuit layout is scalable in size and output Power. The chip consumes up to 2.5 W from a 2.4 V supply and 3.2 mW from a digital 1.2 V supply respectively. The module includes a secondary silicon lens, is programmable through a CPLD, and supplied from a USB port. The THz radiation can be recorded with a CMOS 1 k-pixel THz video camera and represent an all silicon solution for real-time active THz imaging.
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A 288-GHz lens-integrated balanced triple-push source in a 65-nm CMOS technology
IEEE Journal of Solid-State Circuits, 2013Co-Authors: Janusz Grzyb, Yan Zhao, U.r. PfeifferAbstract:A 288-GHz lens-integrated high-Power source implemented in a 65-nm CMOS technology is presented. The source consists of two free-running triple-push ring oscillators locked out-of phase by magnetic coupling. The oscillators drive a differential on-chip ring antenna, which illuminates a hyper-hemispherical silicon lens through the backside of the die. An on-wafer breakout of the oscillators core achieves a peak output Power of -1.5 dBm with a 275-mW DC Power consumption. The Radiated Power of the packaged source is -4.1 dBm, which is the highest reported Radiated Power of a single CMOS source beyond 200 GHz. The source die including the antenna occupies only 500 x 570 μ m2.
