The Experts below are selected from a list of 210 Experts worldwide ranked by ideXlab platform
G. Beshkov - One of the best experts on this subject based on the ideXlab platform.
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Hardness of C, CNx and AlN thin films after Rapid Thermal Annealing
Materials Chemistry and Physics, 2003Co-Authors: G. Beshkov, G. P. Vassilev, M.r. Elizalde, T. Gómez-aceboAbstract:Abstract The hardness and elastic modulus of C, CN x and AlN thin films after Rapid Thermal Annealing have been investigated using nanoindentation and microhardness measurements techniques. The thin films have been deposited on silicon by plasma enhanced chemical vapor deposition using CCl 4 , ksilol and NH 3 as precursors for CN x layers. The film thickness was between 30 and 150 nm. Carbon and AlN thin films have been prepared using Rapid Thermal Annealing. It has been found that the highest values for hardness (17.7 GPa) correspond to the samples prepared with CCl 4 and NH 3 as precursors, and subjected to Rapid Thermal Annealing at 1400 K min −1 .
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Rapid Thermal Annealing OF CoxN
Materials and Manufacturing Processes, 2001Co-Authors: M. Beshkova, G. Beshkov, M. Marinov, D. Bogdanov-dimitrov, G. M. Mladenov, Takeshi Tanaka, K. KawabataAbstract:This research studied the structure and the electrical resistivity after Rapid Thermal Annealing of CoxN thin film deposited by unbalanced radiofrequency magnetron-reactive sputtering (in 6:4 Ar + N2 mixture) at low pressure (6.7 × 10−1 Pa) with the use of a magnetized plasma. An improvement of structure and lower sheet resistivity after Annealing at 500°C for 15–60 sec was observed. At higher temperatures, decomposition of CoxN and growth of CoSi were observed.
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Effect of Rapid Thermal Annealing on the properties of thin carbon films
Materials Science and Engineering: B, 1996Co-Authors: G. Beshkov, N. Velchev, N Tzenov, Teodor Milenov, V. LazarovaAbstract:Carbon films deposited on silicon substrates were studied after Rapid Thermal Annealing (RTA) by Raman spectroscopy and electrical resistance measurements. The temperature and duration of RTA are related to the form and shift of the peaks in the Raman spectra and resistance curve of the films.
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The effect of Rapid Thermal Annealing in vacuum on the properties of thin SiO2 films
Journal of Physics D: Applied Physics, 1995Co-Authors: Albena Paskaleva, Elena Atanassova, G. BeshkovAbstract:The influence of Rapid Thermal Annealing in vacuum on the properties of Thermally grown SiO2 has been investigated by means of high-field Fowler-Nordheim tunnelling injection and breakdown field techniques. The results indicate that the Rapid Thermal Annealing process anneals the original electron traps in the oxide but at the same time introduces a positive charge. These two mechanisms are a strong function of the technological history of the samples and of the oxide quality. Rapid Thermal Annealing in vacuum improves the properties of the as-grown oxides without conventional post-oxidation Annealing in N2 but degrades the oxides that are preliminarily annealed in N2. The extent of the improvement (degradation) depends on the temperature of Rapid Annealing (1073-1473 K).
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Rapid Thermal Annealing of SiO2 for VLSI applications
Journal of Non-Crystalline Solids, 1995Co-Authors: Albena Paskaleva, Elena Atanassova, G. BeshkovAbstract:Abstract The influence of the Rapid Thermal Annealing (RTA) in vacuum on the properties of Thermally grown SiO 2 has been investigated by means of high field Fowler-Nordheim tunneling injection. The results indicate that the RTA process anneals the original electron traps existing in as-grown oxides while also introducing positive charge manifested as electron traps. The dependence of these charges on the Annealing temperature (1073–1473 K) is a strong function of the technological history of the samples.
Jack C Lee - One of the best experts on this subject based on the ideXlab platform.
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Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with Rapid Thermal Annealing
Applied Physics Letters, 2000Co-Authors: Byoung Hun Lee, Laegu Kang, R Nieh, Wen Jie Qi, Jack C LeeAbstract:Dielectric properties of ultrathin hafnium oxide reoxidized with Rapid Thermal Annealing (RTA) have been investigated. Capacitance equivalent oxide thickness (CET) of 45 A hafnium oxide was scaled down to ∼10 A with a leakage current less than 3×10−2 A/cm2 at −1.5 V (i.e., ∼2 V below VFB). Leakage current increase due to crystallization was not observed even after 900 °C Rapid Thermal Annealing (RTA), but CET did increase after high temperature RTA due to the interfacial layer growth and possible silicate formation in the HfO2 film.
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Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with Rapid Thermal Annealing
Applied Physics Letters, 2000Co-Authors: Byoung Hun Lee, Laegu Kang, R Nieh, Jack C LeeAbstract:Dielectric properties of ultrathin hafnium oxide reoxidized with Rapid Thermal Annealing (RTA) have been investigated. Capacitance equivalent oxide thickness (CET) of 45 A hafnium oxide was scaled down to ∼10 A with a leakage current less than 3×10−2 A/cm2 at −1.5 V (i.e., ∼2 V below VFB). Leakage current increase due to crystallization was not observed even after 900 °C Rapid Thermal Annealing (RTA), but CET did increase after high temperature RTA due to the interfacial layer growth and possible silicate formation in the HfO2 film.
Byoung Hun Lee - One of the best experts on this subject based on the ideXlab platform.
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Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with Rapid Thermal Annealing
Applied Physics Letters, 2000Co-Authors: Byoung Hun Lee, Laegu Kang, R Nieh, Wen Jie Qi, Jack C LeeAbstract:Dielectric properties of ultrathin hafnium oxide reoxidized with Rapid Thermal Annealing (RTA) have been investigated. Capacitance equivalent oxide thickness (CET) of 45 A hafnium oxide was scaled down to ∼10 A with a leakage current less than 3×10−2 A/cm2 at −1.5 V (i.e., ∼2 V below VFB). Leakage current increase due to crystallization was not observed even after 900 °C Rapid Thermal Annealing (RTA), but CET did increase after high temperature RTA due to the interfacial layer growth and possible silicate formation in the HfO2 film.
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Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with Rapid Thermal Annealing
Applied Physics Letters, 2000Co-Authors: Byoung Hun Lee, Laegu Kang, R Nieh, Jack C LeeAbstract:Dielectric properties of ultrathin hafnium oxide reoxidized with Rapid Thermal Annealing (RTA) have been investigated. Capacitance equivalent oxide thickness (CET) of 45 A hafnium oxide was scaled down to ∼10 A with a leakage current less than 3×10−2 A/cm2 at −1.5 V (i.e., ∼2 V below VFB). Leakage current increase due to crystallization was not observed even after 900 °C Rapid Thermal Annealing (RTA), but CET did increase after high temperature RTA due to the interfacial layer growth and possible silicate formation in the HfO2 film.
Yitshak Zohar - One of the best experts on this subject based on the ideXlab platform.
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residual stress relaxation in polysilicon thin films by high temperature Rapid Thermal Annealing
Sensors and Actuators A-physical, 1998Co-Authors: Xin Zhang, Tongyi Zhang, Man Wong, Yitshak ZoharAbstract:Abstract Rapid Thermal Annealing reduces stress in a very short time, compared to regular furnace Annealing, and can be an effective method for relaxing residual stress in polysilicon thin films. In this work, the effects of regular furnace and high-temperature Rapid Thermal Annealing (RTA) on the residual stress of LPCVD polysilicon thin films have been investigated. The as-deposited 0.5 μm thick polysilicon films have an initial compressive stress of about 340 MPa, and the residual stress is relaxed quickly after a few cycles of RTA at higher temperatures. The stress dependence on Annealing time at temperatures of 900–1150 °C has been analysed. Using X-ray diffraction (XRD), micro-Raman spectroscopy and transmission electron microscopy (TEM), we have studied the changes in the microstructure of the thin films induced by the RTA during the stress relaxation. Furthermore, variations in the composition of the surface layer due to Annealing have been characterized by X-ray photoelectron spectroscopy (XPS).
A Afzal - One of the best experts on this subject based on the ideXlab platform.
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Rapid Thermal Annealing of in situ p-doped polycrystalline silicon thin-films
Journal of Materials Science, 1999Co-Authors: Waqar Ahmed, A AfzalAbstract:Polycrystalline silicon thin films deposited via low-pressure chemical vapour deposition (LPCVD) have a rough surface and a resistance which is too high for use within microelectronic devices. However, both of these problems may be overcome by in situ doping of the polycrystalline silicon films with phosphorus by introducing PH3/N2 and SiH4/N2 mixtures simultaneously into a LPCVD reactor but, such doping requires a high temperature furnace step (≅950°C) to bring the resistivity down to the required level. In general, prolonged exposure to high temperature is undesirable since it not only reduces the resistivity of the polycrystalline silicon film but also disturbs the existing dopant profiles and alters the structure of the films deposited. This ultimately makes the devices fabricated unreliable, difficult to reproduce and thus a broad device specification in batch production. The solution is to decrease the furnace temperature or reduce the time the devices are kept at high temperature. The latter may be achieved by using a technique known as Rapid Thermal Annealing (RTA). In this paper we examine Rapid Thermal Annealing as a quick method of redistributing the dopants in order to achieve a lower sheet resistance. The results obtained are compared with conventional furnace Annealing. It will be shown that Rapid Thermal Annealing is an attractive and often better alternative to conventional Annealing.
