The Experts below are selected from a list of 7239 Experts worldwide ranked by ideXlab platform
Rishu Chaujar - One of the best experts on this subject based on the ideXlab platform.
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Rear Contact silicon solar cells with a-SiCX:H based front surface passivation for near-ultraviolet radiation stability
Superlattices and Microstructures, 2018Co-Authors: Rahul Pandey, Rishu ChaujarAbstract:Abstract Surface recombination (due to dangling bonds) and lower absorption (due to the low absorption coefficient of silicon (Si)) are the major hindrances in silicon-based photovoltaic (PV) devices. To overcome this, numerous complex texturing schemes are projected to enhance the light trapping. However nanostructured cells are not efficient due to the large surface to volume ratio which enhances surface recombination. Thus, the nanostructured cells require additional passivation scheme to mitigate the recombination losses. Here, we have designed a nontextured, 15% efficient, amorphous silicon carbide hydrogenated (a-SiCX:H) passivated, 10-μm thick Rear Contact Si solar cell device. Considerable reduction in photo reflectance is obtained in the near ultraviolet (UV)/visible spectral region together with near UV stability at higher surface recombination velocity (SRV). External quantum efficiency (EQE) > 90% is achieved by the a-SiCX:H based device (within the wavelength spectrum of 480–620 nm). Improvement in spectrum response give rise to 28.1 mA cm−2 short circuit current density (JSC). Further, the performance of a-SiCX:H passivated device is compared with a conventional dielectric anti-reflective coating (ARC) and high-low junction-based surface passivation techniques. Results indicate that the presence of a-SiCX:H reduces the hole concentration near the front surface which eventually decreases the surface recombination. Highly efficient and reliable solar cells can be achieved by the design schemes reported in this paper, which balance both the photonic and electronic effects together.
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numerical simulations toward the design of 27 6 efficient four terminal semi transparent perovskite sic passivated Rear Contact silicon tandem solar cell
Superlattices and Microstructures, 2016Co-Authors: Rahul Pandey, Rishu ChaujarAbstract:Abstract In this work, a novel four-terminal perovskite/SiC-based Rear Contact silicon tandem solar cell device has been proposed and simulated to achieve 27.6% power conversion efficiency (PCE) under single AM1.5 illumination. 20.9% efficient semitransparent perovskite top subcell has been used for perovskite/silicon tandem architecture. The tandem structure of perovskite-silicon solar cells is a promising method to achieve efficient solar energy conversion at low cost. In the four-terminal tandem configuration, the cells are connected independently and hence avoids the need for current matching between top and bottom subcell, thus giving greater design flexibility. The simulation analysis shows, PCE of 27.6% and 22.4% with 300 μm and 10 μm thick Rear Contact Si bottom subcell, respectively. This is a substantial improvement comparing to transparent perovskite solar cell and c-Si solar cell operated individually. The impact of perovskite layer thickness, monomolecular, bimolecular, and trimolecular recombination have also been obtained on the performance of perovskite top subcell. Reported PCEs of 27.6% and 22.4% are 1.25 times and 1.42 times higher as compared to experimentally available efficiencies of 22.1% and 15.7% in 300 μm and 10 μm thick stand-alone silicon solar cell devices, respectively. The presence of SiC significantly suppressed the interface recombination in bottom silicon subcell. Detailed realistic technology computer aided design (TCAD) analysis has been performed to predict the behaviour of the device.
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Novel 4-terminal perovskite/SiC-based Rear Contact silicon tandem solar cell with 27.6 % PCE
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016Co-Authors: Rahul Pandey, Apurva Jain, Rishu ChaujarAbstract:In this work, a novel 4-terminal perovskite / SiC-based Rear Contact silicon tandem device has been proposed for long-term cost reduction and higher efficiency. The novel tandem device proposed in this work shows ultra-high power conversion efficiency (PCE) of 27.6 % and 22.7 % with 300 μm and 10 μm thick Rear Contact Si solar cell, respectively. The realistic TCAD simulation has been performed for Methylammonium lead triiodide perovskite cell. To simulate and predict the realistic behavior of the device, all the fundamental recombination mechanisms have been included in CH3NH3PbI3 film during the simulation. The perovskite device which is used as top cell shows PCE of 19.9% which is almost equivalent to experimentally available record efficiency of 20.1%. The charge carrier decay constants for CH3NH3PM3 used in the simulation have been obtained from experimentally available data.
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Numerical simulation of Rear Contact silicon solar cell with a novel front surface design for the suppression of interface recombination and improved absorption
Current Applied Physics, 2016Co-Authors: Rahul Pandey, Rishu ChaujarAbstract:Abstract Nanostructuring has been projected as an appropriate technique to make thin silicon an efficient absorber. Although nano-textured surfaces have shown an anti-reflective effect, their surface passivation properties are found to be generally worse compared to standard micro-textured surfaces. Here, a novel front surface design has been proposed and simulated to balance the photonic and electronic effects together. ZrO 2 based texturing has been used along with SiC-based front surface passivation for the suppression of interface recombination and improvement of open-circuit voltage (V OC ). The device under investigation shows record V OC of 662 mV in the sub-10 μm-thick Rear Contact silicon solar cell. The presence of ZrO 2 and SiC significantly improves the optical as well as the electrical behavior of the device. The device exhibits external quantum efficiency (EQE) > 81% in the spectrum range of 320–720 nm wavelength spectrum with a maximum of 95.6% at wavelength 560 nm. These improvements lead to 15.7% efficient Rear Contact silicon solar cell, in the sub-10 μm-thick regime. In second approach power conversion efficiency (PCE) of 21.6% has been achieved, by introducing the same front surface design to a 300 μm thick device. All the simulations have been done using calibrated software program in ATLAS device simulation.
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Numerical simulations: Toward the design of 27.6% efficient four-terminal semi-transparent perovskite/SiC passivated Rear Contact silicon tandem solar cell
Superlattices and Microstructures, 2016Co-Authors: Rahul Pandey, Rishu ChaujarAbstract:Abstract In this work, a novel four-terminal perovskite/SiC-based Rear Contact silicon tandem solar cell device has been proposed and simulated to achieve 27.6% power conversion efficiency (PCE) under single AM1.5 illumination. 20.9% efficient semitransparent perovskite top subcell has been used for perovskite/silicon tandem architecture. The tandem structure of perovskite-silicon solar cells is a promising method to achieve efficient solar energy conversion at low cost. In the four-terminal tandem configuration, the cells are connected independently and hence avoids the need for current matching between top and bottom subcell, thus giving greater design flexibility. The simulation analysis shows, PCE of 27.6% and 22.4% with 300 μm and 10 μm thick Rear Contact Si bottom subcell, respectively. This is a substantial improvement comparing to transparent perovskite solar cell and c-Si solar cell operated individually. The impact of perovskite layer thickness, monomolecular, bimolecular, and trimolecular recombination have also been obtained on the performance of perovskite top subcell. Reported PCEs of 27.6% and 22.4% are 1.25 times and 1.42 times higher as compared to experimentally available efficiencies of 22.1% and 15.7% in 300 μm and 10 μm thick stand-alone silicon solar cell devices, respectively. The presence of SiC significantly suppressed the interface recombination in bottom silicon subcell. Detailed realistic technology computer aided design (TCAD) analysis has been performed to predict the behaviour of the device.
Rahul Pandey - One of the best experts on this subject based on the ideXlab platform.
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Rear Contact silicon solar cells with a-SiCX:H based front surface passivation for near-ultraviolet radiation stability
Superlattices and Microstructures, 2018Co-Authors: Rahul Pandey, Rishu ChaujarAbstract:Abstract Surface recombination (due to dangling bonds) and lower absorption (due to the low absorption coefficient of silicon (Si)) are the major hindrances in silicon-based photovoltaic (PV) devices. To overcome this, numerous complex texturing schemes are projected to enhance the light trapping. However nanostructured cells are not efficient due to the large surface to volume ratio which enhances surface recombination. Thus, the nanostructured cells require additional passivation scheme to mitigate the recombination losses. Here, we have designed a nontextured, 15% efficient, amorphous silicon carbide hydrogenated (a-SiCX:H) passivated, 10-μm thick Rear Contact Si solar cell device. Considerable reduction in photo reflectance is obtained in the near ultraviolet (UV)/visible spectral region together with near UV stability at higher surface recombination velocity (SRV). External quantum efficiency (EQE) > 90% is achieved by the a-SiCX:H based device (within the wavelength spectrum of 480–620 nm). Improvement in spectrum response give rise to 28.1 mA cm−2 short circuit current density (JSC). Further, the performance of a-SiCX:H passivated device is compared with a conventional dielectric anti-reflective coating (ARC) and high-low junction-based surface passivation techniques. Results indicate that the presence of a-SiCX:H reduces the hole concentration near the front surface which eventually decreases the surface recombination. Highly efficient and reliable solar cells can be achieved by the design schemes reported in this paper, which balance both the photonic and electronic effects together.
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numerical simulations toward the design of 27 6 efficient four terminal semi transparent perovskite sic passivated Rear Contact silicon tandem solar cell
Superlattices and Microstructures, 2016Co-Authors: Rahul Pandey, Rishu ChaujarAbstract:Abstract In this work, a novel four-terminal perovskite/SiC-based Rear Contact silicon tandem solar cell device has been proposed and simulated to achieve 27.6% power conversion efficiency (PCE) under single AM1.5 illumination. 20.9% efficient semitransparent perovskite top subcell has been used for perovskite/silicon tandem architecture. The tandem structure of perovskite-silicon solar cells is a promising method to achieve efficient solar energy conversion at low cost. In the four-terminal tandem configuration, the cells are connected independently and hence avoids the need for current matching between top and bottom subcell, thus giving greater design flexibility. The simulation analysis shows, PCE of 27.6% and 22.4% with 300 μm and 10 μm thick Rear Contact Si bottom subcell, respectively. This is a substantial improvement comparing to transparent perovskite solar cell and c-Si solar cell operated individually. The impact of perovskite layer thickness, monomolecular, bimolecular, and trimolecular recombination have also been obtained on the performance of perovskite top subcell. Reported PCEs of 27.6% and 22.4% are 1.25 times and 1.42 times higher as compared to experimentally available efficiencies of 22.1% and 15.7% in 300 μm and 10 μm thick stand-alone silicon solar cell devices, respectively. The presence of SiC significantly suppressed the interface recombination in bottom silicon subcell. Detailed realistic technology computer aided design (TCAD) analysis has been performed to predict the behaviour of the device.
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Novel 4-terminal perovskite/SiC-based Rear Contact silicon tandem solar cell with 27.6 % PCE
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016Co-Authors: Rahul Pandey, Apurva Jain, Rishu ChaujarAbstract:In this work, a novel 4-terminal perovskite / SiC-based Rear Contact silicon tandem device has been proposed for long-term cost reduction and higher efficiency. The novel tandem device proposed in this work shows ultra-high power conversion efficiency (PCE) of 27.6 % and 22.7 % with 300 μm and 10 μm thick Rear Contact Si solar cell, respectively. The realistic TCAD simulation has been performed for Methylammonium lead triiodide perovskite cell. To simulate and predict the realistic behavior of the device, all the fundamental recombination mechanisms have been included in CH3NH3PbI3 film during the simulation. The perovskite device which is used as top cell shows PCE of 19.9% which is almost equivalent to experimentally available record efficiency of 20.1%. The charge carrier decay constants for CH3NH3PM3 used in the simulation have been obtained from experimentally available data.
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Numerical simulation of Rear Contact silicon solar cell with a novel front surface design for the suppression of interface recombination and improved absorption
Current Applied Physics, 2016Co-Authors: Rahul Pandey, Rishu ChaujarAbstract:Abstract Nanostructuring has been projected as an appropriate technique to make thin silicon an efficient absorber. Although nano-textured surfaces have shown an anti-reflective effect, their surface passivation properties are found to be generally worse compared to standard micro-textured surfaces. Here, a novel front surface design has been proposed and simulated to balance the photonic and electronic effects together. ZrO 2 based texturing has been used along with SiC-based front surface passivation for the suppression of interface recombination and improvement of open-circuit voltage (V OC ). The device under investigation shows record V OC of 662 mV in the sub-10 μm-thick Rear Contact silicon solar cell. The presence of ZrO 2 and SiC significantly improves the optical as well as the electrical behavior of the device. The device exhibits external quantum efficiency (EQE) > 81% in the spectrum range of 320–720 nm wavelength spectrum with a maximum of 95.6% at wavelength 560 nm. These improvements lead to 15.7% efficient Rear Contact silicon solar cell, in the sub-10 μm-thick regime. In second approach power conversion efficiency (PCE) of 21.6% has been achieved, by introducing the same front surface design to a 300 μm thick device. All the simulations have been done using calibrated software program in ATLAS device simulation.
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Numerical simulations: Toward the design of 27.6% efficient four-terminal semi-transparent perovskite/SiC passivated Rear Contact silicon tandem solar cell
Superlattices and Microstructures, 2016Co-Authors: Rahul Pandey, Rishu ChaujarAbstract:Abstract In this work, a novel four-terminal perovskite/SiC-based Rear Contact silicon tandem solar cell device has been proposed and simulated to achieve 27.6% power conversion efficiency (PCE) under single AM1.5 illumination. 20.9% efficient semitransparent perovskite top subcell has been used for perovskite/silicon tandem architecture. The tandem structure of perovskite-silicon solar cells is a promising method to achieve efficient solar energy conversion at low cost. In the four-terminal tandem configuration, the cells are connected independently and hence avoids the need for current matching between top and bottom subcell, thus giving greater design flexibility. The simulation analysis shows, PCE of 27.6% and 22.4% with 300 μm and 10 μm thick Rear Contact Si bottom subcell, respectively. This is a substantial improvement comparing to transparent perovskite solar cell and c-Si solar cell operated individually. The impact of perovskite layer thickness, monomolecular, bimolecular, and trimolecular recombination have also been obtained on the performance of perovskite top subcell. Reported PCEs of 27.6% and 22.4% are 1.25 times and 1.42 times higher as compared to experimentally available efficiencies of 22.1% and 15.7% in 300 μm and 10 μm thick stand-alone silicon solar cell devices, respectively. The presence of SiC significantly suppressed the interface recombination in bottom silicon subcell. Detailed realistic technology computer aided design (TCAD) analysis has been performed to predict the behaviour of the device.
Ajeet Rohatgi - One of the best experts on this subject based on the ideXlab platform.
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Large Area 21.6% Efficiency Front Junction N-type Cell with Screen Printed Tunnel Oxide Passivated Poly-Si Rear Contact
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 2019Co-Authors: Ying-yuan Huang, Vijaykumar Upadhyaya, Ajay D. Upadhyaya, Keeya Madani, Ajeet RohatgiAbstract:We report on the implementation of screen printed carrier-selective tunnel oxide passivated poly-Si Rear Contact for high-efficiency front junction crystalline Si solar cells. Using a 15A thick tunnel oxide grown in nitric acid at 100°C and capped with 100nm LPCVD grown n+ poly-Si, we were able to achieve excellent Rear Contact passivation even after the formation of screen printed Contacts. The saturation current density on the Rear side (J 0b’ ) without metal was 1.7 fA/cm2. After firing the screen printed Ag Contacts through SiN cap on poly-Si, with 9% metal coverage, J 0b’ increased to only ~5 fA/cm2. An ion-implanted 180 Ω/□ boron doped homogeneous emitter was used on the front. This resulted in large area (239 cm2) 21.6% cells on industrial grade n-type CZ Si wafer. Smaller area 100 cm2 cells gave 22% efficiency.
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Hole-selective molybdenum oxide as a full-area Rear Contact to crystalline p-type Si solar cells
Japanese Journal of Applied Physics, 2017Co-Authors: Woojun Yoon, Ajeet Rohatgi, James E. Moore, Eunhwan Cho, David Scheiman, Nicole A. Kotulak, Erin R. Cleveland, Phillip P. Jenkins, Robert J. WaltersAbstract:We examine thermally evaporated MoO x films as a full-area Rear Contact to crystalline p-type Si solar cells for efficient hole-selective Contacts. Prior to front- and Rear-metallization, the implied open-circuit voltage (iV oc) is evaluated to be 646 mV with implied fill factor (iFF) of 82.5% for the tunnel SiO x /MoO x Rear Contacted cell structure with the passivated emitter on the textured surface, showing it is possible to achieve an implied 1-sun efficiency of 20.8%. Numerical simulation reveals that the electron affinity (χ) of the MoO x material strongly influences the performance of the MoO x Contacted p-Si cell. Simulated band diagrams show that the values in χ of the MoO x layer must be sufficiently high in order to lower junction recombination, indicating that the highest efficiency of 21.1% is achievable for a high χ of 5.6 eV of MoO x films and back surface recombination velocity of
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large area tunnel oxide passivated Rear Contact n type si solar cells with 21 2 efficiency
Progress in Photovoltaics, 2016Co-Authors: Yuguo Tao, Vijaykumar Upadhyaya, Chia-wei Chen, Adam M. Payne, Elizabeth Chang, Ajay D. Upadhyaya, Ajeet RohatgiAbstract:This paper reports on the implementation of carrier-selective tunnel oxide passivated Rear Contact for high-efficiency screen-printed large area n-type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ polysilicon layer provides excellent Rear Contact passivation with implied open-circuit voltage iVoc of 714 mV and saturation current density J0b′ of 10.3 fA/cm2 for the back surface field region. The durability of this passivation scheme is also investigated for a back-end high temperature process. In combination with an ion-implanted Al2O3-passivated boron emitter and screen-printed front metal grids, this passivated Rear Contact enabled 21.2% efficient front junction Si solar cells on 239 cm2 commercial grade n-type Czochralski wafers. Copyright © 2016 John Wiley & Sons, Ltd.
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Large area tunnel oxide passivated Rear Contact n‐type Si solar cells with 21.2% efficiency
Progress in Photovoltaics: Research and Applications, 2016Co-Authors: Yuguo Tao, Vijaykumar Upadhyaya, Chia-wei Chen, Adam M. Payne, Elizabeth Chang, Ajay D. Upadhyaya, Ajeet RohatgiAbstract:This paper reports on the implementation of carrier-selective tunnel oxide passivated Rear Contact for high-efficiency screen-printed large area n-type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ polysilicon layer provides excellent Rear Contact passivation with implied open-circuit voltage iVoc of 714 mV and saturation current density J0b′ of 10.3 fA/cm2 for the back surface field region. The durability of this passivation scheme is also investigated for a back-end high temperature process. In combination with an ion-implanted Al2O3-passivated boron emitter and screen-printed front metal grids, this passivated Rear Contact enabled 21.2% efficient front junction Si solar cells on 239 cm2 commercial grade n-type Czochralski wafers. Copyright © 2016 John Wiley & Sons, Ltd.
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Development of Rear Contact Technologies for Next Generation High-Efficiency Silicon Solar Cells
2012Co-Authors: Ajeet Rohatgi, I.b. CooperAbstract:Project Objective: The objective of this program is to develop low-cost high-quality Rear Contacts and fabricate production-ready high-efficiency monocrystalline (~20%) and multicrystalline (17-18%) silicon solar cells. This efficiency enhancement on thin Si wafers will help achieve the Solar America Initiative goal of a levelized cost of electricity less than 10¢ per kWh by 2015. Background: The efficiency of current c-Si solar cells is strongly dependent on back surface passivation because recent advances in crystal growth and cell processing can produce bulk diffusion lengths greater than the wafer thickness. Improving the Rear Contact quality realizes three benefits simultaneously: gain in absolute efficiency, ability to use lower quality thin wafers, and better Si utilization. In this project, we will investigate and develop four novel back Contact technologies that can lower the back surface recombination velocity (BSRV) and enhance the back surface reflectance (BSR). These Rear Contact technologies include (a) novel dielectric passivation of the Rear surface (b) local Contact window opening through a dielectric by screen printing or laser patterning (c) a novel boron diffusion process for p+ back surface field (B-BSF) and (d) a-Si passivation of the p-type Rear Si surface in conjunction with screen printed front Contacts. Our device modelingmore » and analysis shows that these technologies can raise production-ready large area cell efficiencies in our laboratory from 17.5-18.0% to ~20.0% and expedite their commercialization. These Rear Contact technologies will allow the use of thin Si wafers (100-150 μm) without any wafer warpage or compromise in cell efficiency.« less
Marika Edoff - One of the best experts on this subject based on the ideXlab platform.
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Decoupling of Optical and Electrical Properties of Rear Contact CIGS Solar Cells
IEEE Journal of Photovoltaics, 2019Co-Authors: José M. V. Cunha, Marika Edoff, Wei-chao Chen, Tomás S. Lopes, Sourav Bose, Adam Hultqvist, Olivier Donzel-gargand, Rodrigo M. Ribeiro, Antonio J. N. Oliveira, Paulo A. FernandesAbstract:A novel architecture that comprises Rear interface passivation and increased Rear optical reflection is presented with the following advantages: i) enhanced optical reflection is achieved by the deposition of a metallic layer over the Mo Rear Contact; ii) improved interface quality with CIGS by adding a sputtered Al2O3 layer over the metallic layer; and, iii) optimal ohmic electrical Contact ensured by Rear-openings refilling with a second layer of Mo as generally observed from the growth of CIGS on Mo. Hence, a decoupling between the electrical function and the optical purpose of the Rear substrate is achieved. We present in detail the manufacturing procedure of such type of architecture together with its benefits and caveats. A preliminary analysis showing an architecture proof-of-concept is presented and discussed.
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Effect of NaF pre-cursor on alumina and hafnia Rear Contact passivation layers in ultra-thin Cu(In,Ga)Se2 solar cells
Thin Solid Films, 2019Co-Authors: Dorothea Ledinek, Carl Hägglund, Jan Keller, Wei-chao Chen, Marika EdoffAbstract:In this work, we evaluate the effect of NaF layers on the properties of Al2O3 and HfO2 Rear Contact passivation layers in ultra-thin Cu(In,Ga)Se2 solar cells. The 6 nm thin passivation layers were ...
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Effect of different Na supply methods on thin Cu(In,Ga)Se2 solar cells with Al2O3 Rear passivation layers
Solar Energy Materials and Solar Cells, 2018Co-Authors: Dorothea Ledinek, Jan Keller, Olivier Donzel-gargand, Markus Sköld, Marika EdoffAbstract:In this work, Rear-Contact passivated Cu(In,Ga)Se2 (CIGS) solar cells were fabricated without any intentional Contact openings between the CIGS and Mo layers. The investigated samples were either N ...
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Rear Contact passivation for high bandgap Cu(In, Ga)Se2 solar cells with varying absorber thickness and flat Ga profile
IEEE Journal of Photovoltaics, 2017Co-Authors: Dorothea Ledinek, Pedro M. P. Salome, Carl Hägglund, Uwe Zimmermann, Marika EdoffAbstract:In this study, Cu(In, Ga)Se2 solar cells with a high bandgap (1.31 eV) and a flat Ga profile ([Ga]/([Ga]+[In]) ≍ 0.60) were examined. For absorber layer thicknesses varying from 0.60 to 1.45 μm, the Mo Rear Contact of one set of samples was passivated with an ultrathin (27 nm) Al2O 3 layer with point Contact openings, and compared with reference samples where the Rear Contact remained unpassivated. For the passivated samples, mainly large gains in the short-circuit current led to an up to 21% (relative) higher power conversion efficiency compared with unpassivated cells. The differences in temperature-dependent current voltage behavior between the passivated and the unpassivated samples and the thin and the thick samples can be explained by an oppositely poled secondary photodiode at the Rear Contact.
Yuguo Tao - One of the best experts on this subject based on the ideXlab platform.
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large area tunnel oxide passivated Rear Contact n type si solar cells with 21 2 efficiency
Progress in Photovoltaics, 2016Co-Authors: Yuguo Tao, Vijaykumar Upadhyaya, Chia-wei Chen, Adam M. Payne, Elizabeth Chang, Ajay D. Upadhyaya, Ajeet RohatgiAbstract:This paper reports on the implementation of carrier-selective tunnel oxide passivated Rear Contact for high-efficiency screen-printed large area n-type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ polysilicon layer provides excellent Rear Contact passivation with implied open-circuit voltage iVoc of 714 mV and saturation current density J0b′ of 10.3 fA/cm2 for the back surface field region. The durability of this passivation scheme is also investigated for a back-end high temperature process. In combination with an ion-implanted Al2O3-passivated boron emitter and screen-printed front metal grids, this passivated Rear Contact enabled 21.2% efficient front junction Si solar cells on 239 cm2 commercial grade n-type Czochralski wafers. Copyright © 2016 John Wiley & Sons, Ltd.
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Large area tunnel oxide passivated Rear Contact n‐type Si solar cells with 21.2% efficiency
Progress in Photovoltaics: Research and Applications, 2016Co-Authors: Yuguo Tao, Vijaykumar Upadhyaya, Chia-wei Chen, Adam M. Payne, Elizabeth Chang, Ajay D. Upadhyaya, Ajeet RohatgiAbstract:This paper reports on the implementation of carrier-selective tunnel oxide passivated Rear Contact for high-efficiency screen-printed large area n-type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ polysilicon layer provides excellent Rear Contact passivation with implied open-circuit voltage iVoc of 714 mV and saturation current density J0b′ of 10.3 fA/cm2 for the back surface field region. The durability of this passivation scheme is also investigated for a back-end high temperature process. In combination with an ion-implanted Al2O3-passivated boron emitter and screen-printed front metal grids, this passivated Rear Contact enabled 21.2% efficient front junction Si solar cells on 239 cm2 commercial grade n-type Czochralski wafers. Copyright © 2016 John Wiley & Sons, Ltd.
