The Experts below are selected from a list of 6444 Experts worldwide ranked by ideXlab platform
Rong Wang - One of the best experts on this subject based on the ideXlab platform.
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electroluminescence analysis of voc degradation of individual subcell in gainp gaas ge space solar cells irradiated by 1 0 mev electrons
Journal of Luminescence, 2020Co-Authors: Junling Wang, Ju Liu, Yanyu Liu, Rong WangAbstract:Abstract The open-circuit voltage (VOC) degradation for individual subcell in 1.0 MeV electrons-irradiated GaInP/GaAs/Ge solar cells has been analyzed using electroluminescence (EL) measurements. By using the relationship between VOC degradation and electron fluence, the capture cross section of the defects induced by electron irradiation in individual subcells were determined. Furthermore, by comparing the thermal activation energy and capture cross section, a defect located at Ev+0.55 eV styled H2 hole trap is nonradiative Recombination Centre in GaInP subcell, a defect located at EC-0.96 eV styled E5 electron trap is nonradiative Recombination Centre in GaAs subcell, and a defect located at EC-0.38 eV styled E-center electron trap is nonradiative Recombination Centre in Ge subcell.
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Electroluminescence analysis of VOC degradation of individual subcell in GaInP/GaAs/Ge space solar cells irradiated by 1.0 MeV electrons
Journal of Luminescence, 2020Co-Authors: Gang Yan, Junling Wang, Yanyu Liu, Jun Liu, Rong WangAbstract:Abstract The open-circuit voltage (VOC) degradation for individual subcell in 1.0 MeV electrons-irradiated GaInP/GaAs/Ge solar cells has been analyzed using electroluminescence (EL) measurements. By using the relationship between VOC degradation and electron fluence, the capture cross section of the defects induced by electron irradiation in individual subcells were determined. Furthermore, by comparing the thermal activation energy and capture cross section, a defect located at Ev+0.55 eV styled H2 hole trap is nonradiative Recombination Centre in GaInP subcell, a defect located at EC-0.96 eV styled E5 electron trap is nonradiative Recombination Centre in GaAs subcell, and a defect located at EC-0.38 eV styled E-center electron trap is nonradiative Recombination Centre in Ge subcell.
Jean M. Schmidt - One of the best experts on this subject based on the ideXlab platform.
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accelerated deactivation of the boron oxygen related Recombination Centre in crystalline silicon
Semiconductor Science and Technology, 2011Co-Authors: B Lim, Karsten Bothe, Jean M. SchmidtAbstract:A significant acceleration of the permanent deactivation of the boron–oxygen-related Recombination Centre in crystalline silicon is observed if the samples are exposed to the plasma during plasma-enhanced chemical vapour deposition (PECVD) of a hydrogen-rich silicon nitride (SiNx) layer. Similar deactivation rate constants are measured in samples passivated with hydrogen-rich SiNx deposited without plasma exposure and hydrogen-lean aluminium oxide (Al2O3) deposited with plasma-assisted atomic layer deposition, suggesting that the critical parameter responsible for the acceleration is not the hydrogen content in the dielectric layer. Instead, we propose increased in-diffusion of hydrogen during or after the deposition of the PECVD SiNx layer, for example due to surface damage caused by plasma exposure, as the cause for the acceleration.
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Accelerated deactivation of the boron?oxygen-related Recombination Centre in crystalline silicon
Semiconductor Science and Technology, 2011Co-Authors: B Lim, Karsten Bothe, Jean M. SchmidtAbstract:A significant acceleration of the permanent deactivation of the boron–oxygen-related Recombination Centre in crystalline silicon is observed if the samples are exposed to the plasma during plasma-enhanced chemical vapour deposition (PECVD) of a hydrogen-rich silicon nitride (SiNx) layer. Similar deactivation rate constants are measured in samples passivated with hydrogen-rich SiNx deposited without plasma exposure and hydrogen-lean aluminium oxide (Al2O3) deposited with plasma-assisted atomic layer deposition, suggesting that the critical parameter responsible for the acceleration is not the hydrogen content in the dielectric layer. Instead, we propose increased in-diffusion of hydrogen during or after the deposition of the PECVD SiNx layer, for example due to surface damage caused by plasma exposure, as the cause for the acceleration.
Stefan W. Glunz - One of the best experts on this subject based on the ideXlab platform.
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Impact of light‐induced Recombination Centres on the current–voltage characteristic of czochralski silicon solar cells
Progress in Photovoltaics: Research and Applications, 2001Co-Authors: Jan Schmidt, Andres Cuevas, Stefan Rein, Stefan W. GlunzAbstract:We have investigated the effect of the light-induced deep-level Recombination Centre specific to boron-doped, oxygen-contaminated Czochralski (Cz) silicon on the current-voltage characteristic of Cz silicon solar cells by means of numerical simulation and experiment. The device simulation predicts the occurrence of a shoulder in the current-voltage curve after activating the characteristic Recombination Centre. The physical reason for the non-ideal diode behaviour, characterised by a local ideality factor greater unity, is the strongly injection-level-dependent bulk lifetime produced by the deep-level Centre. The increased ideality factor causes a degradation in fill factor with the magnitude of degradation depending on the doping concentration of the Cz silicon base. In order to verify the theoretical predictions experimentally, we have performed measurements on high-efficiency Cz silicon solar cells. Current-voltage curves recorded before and after light degradation clearly show the theoretically predicted change in shape and the reduction in fill factor. An excellent quantitative agreement between calculation and experiment is obtained for the subtracted current-voltage curves measured after and before illumination.
Junling Wang - One of the best experts on this subject based on the ideXlab platform.
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electroluminescence analysis of voc degradation of individual subcell in gainp gaas ge space solar cells irradiated by 1 0 mev electrons
Journal of Luminescence, 2020Co-Authors: Junling Wang, Ju Liu, Yanyu Liu, Rong WangAbstract:Abstract The open-circuit voltage (VOC) degradation for individual subcell in 1.0 MeV electrons-irradiated GaInP/GaAs/Ge solar cells has been analyzed using electroluminescence (EL) measurements. By using the relationship between VOC degradation and electron fluence, the capture cross section of the defects induced by electron irradiation in individual subcells were determined. Furthermore, by comparing the thermal activation energy and capture cross section, a defect located at Ev+0.55 eV styled H2 hole trap is nonradiative Recombination Centre in GaInP subcell, a defect located at EC-0.96 eV styled E5 electron trap is nonradiative Recombination Centre in GaAs subcell, and a defect located at EC-0.38 eV styled E-center electron trap is nonradiative Recombination Centre in Ge subcell.
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Electroluminescence analysis of VOC degradation of individual subcell in GaInP/GaAs/Ge space solar cells irradiated by 1.0 MeV electrons
Journal of Luminescence, 2020Co-Authors: Gang Yan, Junling Wang, Yanyu Liu, Jun Liu, Rong WangAbstract:Abstract The open-circuit voltage (VOC) degradation for individual subcell in 1.0 MeV electrons-irradiated GaInP/GaAs/Ge solar cells has been analyzed using electroluminescence (EL) measurements. By using the relationship between VOC degradation and electron fluence, the capture cross section of the defects induced by electron irradiation in individual subcells were determined. Furthermore, by comparing the thermal activation energy and capture cross section, a defect located at Ev+0.55 eV styled H2 hole trap is nonradiative Recombination Centre in GaInP subcell, a defect located at EC-0.96 eV styled E5 electron trap is nonradiative Recombination Centre in GaAs subcell, and a defect located at EC-0.38 eV styled E-center electron trap is nonradiative Recombination Centre in Ge subcell.
Torben Lapp - One of the best experts on this subject based on the ideXlab platform.
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charge Recombination processes in minerals studied using optically stimulated luminescence and time resolved exo electrons
Journal of Physics D, 2010Co-Authors: Sumiko Tsukamoto, A S Murray, Christina Ankjaergaard, Mayank Jain, Torben LappAbstract:A time-resolved optically stimulated exo-electron (TR-OSE) measurement system has been developed using a Photon Timer attached to a gas-flow semi-proportional pancake electron detector within a Riso TL/OSL reader. The decay rate of the exo-electron emission after the stimulation pulse depends on the probability of (1) escape of electrons into the detector gas from the conduction band by overcoming the work function of the material and (2) thermalization of electrons in the conduction band, and subsequent re-trapping/Recombination. Thus, we expect the exo-electron signal to reflect the instantaneous electron concentration in the conduction band. In this study, TR-OSE and time-resolved optically stimulated luminescence (TR-OSL) were measured for the first time using quartz, K-feldspar and NaCl by stimulating the samples using pulsed blue LEDs at different temperatures between 50 and 250 °C after beta irradiation and preheating to 280 °C. The majority of TR-OSE signals from all the samples decayed much faster than TR-OSL signals irrespective of the stimulation temperatures. This suggests that the lifetime of OSL in these dosimeters arises mainly from the relaxation of an excited state of the Recombination Centre, rather than from residence time of an electron in the conduction band.
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Charge Recombination processes in minerals studied using optically stimulated luminescence and time-resolved exo-electrons
Journal of Physics D: Applied Physics, 2010Co-Authors: Sumiko Tsukamoto, Christina Ankjaergaard, Mayank Jain, Andrew Murray, Torben LappAbstract:A time-resolved optically stimulated exo-electron (TR-OSE) measurement system has been developed using a Photon Timer attached to a gas-flow semi-proportional pancake electron detector within a Risø TL/OSL reader. The decay rate of the exo-electron emission after the stimulation pulse depends on the probability of (1) escape of electrons into the detector gas from the conduction band by overcoming the work function of the material, and (2) thermalisation of electrons in the conduction band, and subsequent re-trapping/Recombination. Thus we expect the exo-electron signal to reflect the instantaneous electron concentration in the conduction band. In this study, TR-OSE and TR-OSL were measured for the first time using quartz, K-feldspar and NaCl by stimulating the samples using pulsed blue LEDs at different temperatures between 50 and 250 °C after beta irradiation and preheating to 280 °C. The majority of TR-OSE signals from all the samples decayed much faster than TR-OSL signals irrespective of the stimulation temperatures. This suggests that the lifetime of OSL in these dosimeters arises mainly from the relaxation of an excited state of the Recombination Centre, rather than from residence time of an electron in the conduction band.