The Experts below are selected from a list of 8856 Experts worldwide ranked by ideXlab platform

Xing Ming Fan - One of the best experts on this subject based on the ideXlab platform.

  • Structure and photoluminescence properties of ZnO microrods
    Journal of Applied Physics, 2003
    Co-Authors: D. Zhao, Li-chen Zhang, Yong Liu, D Shen, Y. Lu, Xing Ming Fan
    Abstract:

    A study was conducted on the structure and photoluminescence properties of the ZnO microrods. The scanning electron microscopy was used to study the morphologies of the microrods. Due to the exciton-exciton collision process, an exciton Related Emission band was observed under low excitation intensity at room temperature.

Y.k. Su - One of the best experts on this subject based on the ideXlab platform.

  • Si and Zn co-doped InGaN-GaN white light-emitting diodes
    IEEE Transactions on Electron Devices, 2003
    Co-Authors: S.j. Chang, J.k. Sheu, L.w. Wu, Y.k. Su, J.f. Chen, J.m. Tsai
    Abstract:

    InGaN-GaN double heterostructure (DH) and multiquantum-well (MQW) light-emitting diodes (LEDs) with Si and Zn co-doped active well layers were prepared by metalorganic chemical vapor deposition (MOCVD). It was found that we could observe a broad long-wavelength donor-acceptor (D-A) pair-Related Emission at 500/spl sim/560 nm. White light can thus be achieved by the combination of such a long-wavelength D-A pair Emission with the InGaN band-edge-Related blue Emission. By increasing the DMZn mole flow rate to 360 nmole/min, we could achieve a Si and Zn co-doped In/sub 0.3/Ga/sub 0.7/N-GaN MQW LED with color temperature of 4100 K, color rendering index of 70, and color coordinates x=0.383, y=0.405. It was also found that the 20-mA forward voltage and the breakdown voltage of such Si and Zn co-doped In/sub 0.3/Ga/sub 0.7/N-GaN MQW LEDs were both smaller than those of the conventional phosphor-converted white LEDs.

  • White-light Emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer
    IEEE Photonics Technology Letters, 2002
    Co-Authors: J.k. Sheu, L.w. Wu, C.h. Chen, S.j. Chang, Y.k. Su
    Abstract:

    Si and Zn codoped In/sub x/Ga/sub 1-x/N-GaN multiple-quantum-well (MQW) light-emitting diode (LED) structures were grown by metal-organic vapor phase epitaxy (MOVPE). It was found that we can observe a broad long-wavelength donor-acceptor (D-A) pair Related Emission at 500 nm/spl sim/560 nm. White light can thus be achieved by the combination of such a long-wavelength D-A pair Emission with the InGaN bandedge Related blue Emission. It was also found that the electroluminescence (EL) spectra of such Si and Zn codoped InGaN-GaN MQW LEDs are very similar to those measured from phosphor-converted white LEDs. That is, we can achieve white light Emission without the use of phosphor by properly adjusting the indium composition and the concentrations of the codoped Si and Zn atoms in the active well layers and the amount of injection current.

D. Zhao - One of the best experts on this subject based on the ideXlab platform.

  • Structure and photoluminescence properties of ZnO microrods
    Journal of Applied Physics, 2003
    Co-Authors: D. Zhao, Li-chen Zhang, Yong Liu, D Shen, Y. Lu, Xing Ming Fan
    Abstract:

    A study was conducted on the structure and photoluminescence properties of the ZnO microrods. The scanning electron microscopy was used to study the morphologies of the microrods. Due to the exciton-exciton collision process, an exciton Related Emission band was observed under low excitation intensity at room temperature.

C. N. R. Rao - One of the best experts on this subject based on the ideXlab platform.

Xinlu Wang - One of the best experts on this subject based on the ideXlab platform.

  • the formation and acceptor Related Emission behavior of zno znal2o4 core shell structures
    Journal of Alloys and Compounds, 2013
    Co-Authors: Xi Chen, Xuan Fang, Jinhua Li, Fang Fang, Shuang Li, Xinlu Wang
    Abstract:

    Abstract In this paper, ZnO nanorods were grown on Si substrate with hydrothermal method, followed by Al 2 O 3 and ZnO thin layers deposited on ZnO nanorods by atomic layer deposition, a coated nanocomposite structure ZnO/Al 2 O 3 /ZnO nanorods were obtained. Based on Kirkendall effect, ZnO/ZnAl 2 O 4 core–shell nanostructure were fabricated by annealing treatment through an interfacial solid-state reaction between ZnO and Al 2 O 3 , which were confirmed by X-ray diffraction spectra. In this process, due to that Zn ions diffused into Al 2 O 3 and formed ZnAl 2 O 4 , Zn vacancies were introduced in ZnO. In PL spectra, the Emission Related to acceptor located at 3.355 eV and 3.315 eV can be observed, which were attributed to A 0 X and FA Emission, respectively. The calculated acceptor binding energy is 118 meV.