The Experts below are selected from a list of 7353 Experts worldwide ranked by ideXlab platform
Satoshi Takei - One of the best experts on this subject based on the ideXlab platform.
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Extreme-ultraviolet and electron beam lithography processing using water developable Resist Material
Nanoengineering: Fabrication Properties Optics and Devices XIV, 2017Co-Authors: Satoshi TakeiAbstract:In order to achieve the use of pure water in the developable process of extreme-ultraviolet and electron beam lithography, instead of conventionally used tetramethylammonium hydroxide and organic solvents, a water developable Resist Material was designed and developed. The water-developable Resist Material was derived from woody biomass with beta-linked disaccharide unit for environmental affair, safety, easiness of handling, and health of the working people. 80 nm dense line patterning images with exposure dose of 22 μC/cm2 and CF4 etching selectivity of 1.8 with hardmask layer were provided by specific process conditions. The approach of our water-developable Resist Material will be one of the most promising technologies ready to be investigated into production of medical device applications.
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Organic-inorganic hybrid Resist Materials in advanced lithography
Nanoengineering: Fabrication Properties Optics and Devices XIV, 2017Co-Authors: Satoshi Takei, Naoto Sugino, Makoto HanabataAbstract:Advanced nano-imprint lithography appears as a simple, cost reduction in manufacturing, fast operation, develop-less patterning application compatible with conventional pattern transfer techniques such as ultraviolet and electron beam lithography. However, defects generated in nano-imprint lithography present challenges that must be resolved in order to mass-produce advanced devices. The nano-imprint lithography requires the clean separation of a quartz template from a Resist Material, and the force required to create this separation must be minimized to prevent the Resist pattern collapse and defects. This procedure is proven to be suitable for Material design and the process conditions of organic-inorganic hybrid Resist Materials on photo-reactive underlayer Material for the defect reduction by mold contamination when the mold was removed from the organic-inorganic hybrid Resist Materials after ultraviolet irradiation. The developed organic-inorganic hybrid Resist Material with ultraviolet crosslinking groups produced high resolutions nano-patterning of 50 nm line and excellent etch properties for semiconductor memory, MEMS, NEMS, biosensors, and medical devices.
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ecofriendly ethanol developable processes for electron beam lithography using positive tone dextrin Resist Material
Applied Physics Express, 2017Co-Authors: Satoshi Takei, Takahiro Kozawa, Makoto Hanabata, Akihiro Oshima, Miki Kashiwakura, Naoto Sugino, Seiichi TagawaAbstract:From the viewpoints of the utilization of agricultural resources and advanced use of biomass, this study is aimed at expanding the resolution limits of ecofriendly ethanol-developable processes for electron-beam lithography using a positive-tone dextrin Resist Material with high hydrophilicity on a cellulose-based underlayer. The images of 20-nm-hole and 40-nm-line patterns with an exposure dose of approximately 1800 µC/cm2 were provided by ecofriendly ethanol-developable processes instead of the common development processes using tetramethylammonium hydroxide and organic solvents. The CF4 etching selectivity of the positive-tone dextrin Resist Material was approximately 10% lower than that of the polymethyl methacrylate used as a reference Resist Material.
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Green Lithography Using Water-Developable Sugar-Based Negative Resist Materials
MRS Advances, 2016Co-Authors: Satoshi Takei, Makoto Hanabata, Naoto Sugino, Kigen Sugahara, Takao Kameda, Jiro FukushimaAbstract:A water-developable sugar-based negative Resist Material was developed. This Material enables the use of pure water in the development process of electron beam (EB) green lithography instead of conventionally used aqueous alkaline developers and organic solvents. The sugar-based negative Resist Material was developed by replacing the hydroxyl groups in alpha-linked disaccharides with EB-sensitive 2-methacryloyloxyethyl groups. The sugar-based negative Resist Material features highly efficient crosslinking and low film thickness shrinkage under EB irradiation. It is demonstrated to be applicable to green lithography with a 100– 500 nm line-and-space pattern and an EB exposure dose of 18 μC/cm^2.
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EB and EUV lithography using inedible cellulose-based biomass Resist Material
Advances in Patterning Materials and Processes XXXIII, 2016Co-Authors: Satoshi Takei, Takahiro Kozawa, Makoto Hanabata, Akihiro Oshima, Miki Kashiwakura, Seiichi TagawaAbstract:The validity of our approach of inedible cellulose-based Resist Material derived from woody biomass has been confirmed experimentally for the use of pure water in organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques of eco-conscious electron beam (EB) and extreme-ultraviolet (EUV) lithography. The water developable, non-chemically amplified, high sensitive, and negative tone Resist Material in EB and EUV lithography was developed for environmental affair, safety, easiness of handling, and health of the working people. The inedible cellulose-based biomass Resist Material was developed by replacing the hydroxyl groups in the beta-linked disaccharides with EB and EUV sensitive groups. The 50-100 nm line and space width, and little footing profiles of cellulose-based biomass Resist Material on hardmask and layer were resolved at the doses of 10-30 μC/cm2. The eco-conscious lithography techniques was referred to as green EB and EUV lithography using inedible cellulose-based biomass Resist Material.
David L Kaplan - One of the best experts on this subject based on the ideXlab platform.
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biopatterning precise protein photolithography p3 high performance biopatterning using silk fibroin light chain as the Resist adv sci 9 2017
Advanced Science, 2017Co-Authors: Zhitao Zhou, Shaoqing Zhang, Justin Tabarini, Yeshun Zhang, S Gilbert N Corder, Xinxin Li, Fei Dong, Liang Cheng, David L KaplanAbstract:A wafer‐scale high resolution patterning of bio‐microstructures is achieved using precise protein photolithography. In article number 1700191, the application of these micropatterned structures as cellular substrate for the successful spatial guidance of fetal neural stems cells using well‐defined silk fibroin light chain as the Resist Material is demonstrated by Tiger H. Tao and co‐workers.
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precise protein photolithography p3 high performance biopatterning using silk fibroin light chain as the Resist
Advanced Science, 2017Co-Authors: Zhitao Zhou, Shaoqing Zhang, Justin Tabarini, Yeshun Zhang, S Gilbert N Corder, Xinxin Li, Fei Dong, Liang Cheng, David L KaplanAbstract:Precise patterning of bioMaterials has widespread applications, including drug release, degradable implants, tissue engineering, and regenerative medicine. Patterning of protein-based microstructures using UV-photolithography has been demonstrated using protein as the Resist Material. The Achilles heel of existing protein-based biophotoResists is the inevitable wide molecular weight distribution during the protein extraction/regeneration process, hindering their practical uses in the semiconductor industry where reliability and repeatability are paramount. A wafer-scale high resolution patterning of bio-microstructures using well-defined silk fibroin light chain as the Resist Material is presented showing unprecedent performances. The lithographic and etching performance of silk fibroin light chain Resists are evaluated systematically and the underlying mechanisms are thoroughly discussed. The micropatterned silk structures are tested as cellular substrates for the successful spatial guidance of fetal neural stems cells seeded on the patterned substrates. The enhanced patterning resolution, the improved etch Resistance, and the inherent biocompatibility of such protein-based photoResist provide new opportunities in fabricating large scale biocompatible functional microstructures.
Takahiro Kozawa - One of the best experts on this subject based on the ideXlab platform.
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Strategy for the breakthrough of RLS trade-off relationship in the development of novel Resist Materials and a developer
Photomask Technology 2019, 2019Co-Authors: Ayako Nakajima, Manabu Hoshino, Kazunori Taguchi, Takahiro KozawaAbstract:We developed novel Resist Materials and developer with fluorine atoms. Fluorine expected to show higher absorption coefficient than carbon because of its higher atomic number. From QCM, GPC, and SEM evaluation, it was found that ZEP-Y1 and ZEP-Y2 have a potential for next generation Resist Materials. The combination of Resist Material including fluorine atoms and fluorine solution is promising. This study showed the possibility of the extension of range for Resist Materials and developers.
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synthesis of hyperbranched polyacetals containing c 4 t butylbenz calix 4 resorcinarene Resist properties for extreme ultraviolet euv lithography
Reactive & Functional Polymers, 2018Co-Authors: Hiroto Kudo, Hiroki Yamamoto, Takahiro Kozawa, Mari Fukunaga, Kohei Shiotsuki, Hiroya Takeda, Takeo WatanabeAbstract:Abstract We synthesized various hyperbranched polyacetals poly(t-BCRA[4]-co-BVOC), poly(t-BCRA[4]-co-BVOP), poly(t-BCRA[4]-co-BVOXP), poly(t-BCRA[4]-co-BVBC), and poly(t-BCRA[4]-co-TVCH) by the polyaddition of C-(4-t-butylbenz)calix[4]resorcinarene (t-BCRA [4]) with 1,4-bis(4-vinyloxy)cyclohexane (BVOC), 1,3-bis(vinyloxy)propane (BVOP), 1,5-bis(vinyloxy)-3-oxapentane (BVOXP), 4,4′-bis(vinyloxy)-1,1′-bicyclohexane (BVBC), and 1,3,5-tris(vinyloxy)cyclohexane (TVCH), respectively. The Resist properties (Resist sensitivities, outgassing on EUV exposure, thickness loss after soaking in aq. TMAH, and etching durability) were consistent with their structures. Overall, poly(t-BCRA[4]-co-BVOC) has a high potential as a next-generation Resist Material.
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ecofriendly ethanol developable processes for electron beam lithography using positive tone dextrin Resist Material
Applied Physics Express, 2017Co-Authors: Satoshi Takei, Takahiro Kozawa, Makoto Hanabata, Akihiro Oshima, Miki Kashiwakura, Naoto Sugino, Seiichi TagawaAbstract:From the viewpoints of the utilization of agricultural resources and advanced use of biomass, this study is aimed at expanding the resolution limits of ecofriendly ethanol-developable processes for electron-beam lithography using a positive-tone dextrin Resist Material with high hydrophilicity on a cellulose-based underlayer. The images of 20-nm-hole and 40-nm-line patterns with an exposure dose of approximately 1800 µC/cm2 were provided by ecofriendly ethanol-developable processes instead of the common development processes using tetramethylammonium hydroxide and organic solvents. The CF4 etching selectivity of the positive-tone dextrin Resist Material was approximately 10% lower than that of the polymethyl methacrylate used as a reference Resist Material.
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EB and EUV lithography using inedible cellulose-based biomass Resist Material
Advances in Patterning Materials and Processes XXXIII, 2016Co-Authors: Satoshi Takei, Takahiro Kozawa, Makoto Hanabata, Akihiro Oshima, Miki Kashiwakura, Seiichi TagawaAbstract:The validity of our approach of inedible cellulose-based Resist Material derived from woody biomass has been confirmed experimentally for the use of pure water in organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques of eco-conscious electron beam (EB) and extreme-ultraviolet (EUV) lithography. The water developable, non-chemically amplified, high sensitive, and negative tone Resist Material in EB and EUV lithography was developed for environmental affair, safety, easiness of handling, and health of the working people. The inedible cellulose-based biomass Resist Material was developed by replacing the hydroxyl groups in the beta-linked disaccharides with EB and EUV sensitive groups. The 50-100 nm line and space width, and little footing profiles of cellulose-based biomass Resist Material on hardmask and layer were resolved at the doses of 10-30 μC/cm2. The eco-conscious lithography techniques was referred to as green EB and EUV lithography using inedible cellulose-based biomass Resist Material.
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High-sensitivity green Resist Material with organic solvent-free spin-coating and tetramethylammonium hydroxide-free water-developable processes for EB and EUV lithography
Advances in Patterning Materials and Processes XXXII, 2015Co-Authors: Satoshi Takei, Takahiro Kozawa, Makoto Hanabata, Akihiro Oshima, Miki Kashiwakura, Seiichi TagawaAbstract:We investigated the eco-friendly electron beam (EB) and extreme-ultraviolet (EUV) lithography using a high-sensitive negative type of green Resist Material derived from biomass to take advantage of organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques. A water developable, non-chemically amplified, high sensitive, and negative tone Resist Material in EB lithography was developed for environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of TMAH. The Material design concept to use the water-soluble Resist Material with acceptable properties such as pillar patterns with less than 100 nm in high EB sensitivity of 10 μC/cm 2 and etch selectivity with a silicon-based middle layer in CF 4 plasma treatment was demonstrated for EB and EUV lithography.
Xinxin Li - One of the best experts on this subject based on the ideXlab platform.
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biopatterning precise protein photolithography p3 high performance biopatterning using silk fibroin light chain as the Resist adv sci 9 2017
Advanced Science, 2017Co-Authors: Zhitao Zhou, Shaoqing Zhang, Justin Tabarini, Yeshun Zhang, S Gilbert N Corder, Xinxin Li, Fei Dong, Liang Cheng, David L KaplanAbstract:A wafer‐scale high resolution patterning of bio‐microstructures is achieved using precise protein photolithography. In article number 1700191, the application of these micropatterned structures as cellular substrate for the successful spatial guidance of fetal neural stems cells using well‐defined silk fibroin light chain as the Resist Material is demonstrated by Tiger H. Tao and co‐workers.
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precise protein photolithography p3 high performance biopatterning using silk fibroin light chain as the Resist
Advanced Science, 2017Co-Authors: Zhitao Zhou, Shaoqing Zhang, Justin Tabarini, Yeshun Zhang, S Gilbert N Corder, Xinxin Li, Fei Dong, Liang Cheng, David L KaplanAbstract:Precise patterning of bioMaterials has widespread applications, including drug release, degradable implants, tissue engineering, and regenerative medicine. Patterning of protein-based microstructures using UV-photolithography has been demonstrated using protein as the Resist Material. The Achilles heel of existing protein-based biophotoResists is the inevitable wide molecular weight distribution during the protein extraction/regeneration process, hindering their practical uses in the semiconductor industry where reliability and repeatability are paramount. A wafer-scale high resolution patterning of bio-microstructures using well-defined silk fibroin light chain as the Resist Material is presented showing unprecedent performances. The lithographic and etching performance of silk fibroin light chain Resists are evaluated systematically and the underlying mechanisms are thoroughly discussed. The micropatterned silk structures are tested as cellular substrates for the successful spatial guidance of fetal neural stems cells seeded on the patterned substrates. The enhanced patterning resolution, the improved etch Resistance, and the inherent biocompatibility of such protein-based photoResist provide new opportunities in fabricating large scale biocompatible functional microstructures.
Seiichi Tagawa - One of the best experts on this subject based on the ideXlab platform.
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ecofriendly ethanol developable processes for electron beam lithography using positive tone dextrin Resist Material
Applied Physics Express, 2017Co-Authors: Satoshi Takei, Takahiro Kozawa, Makoto Hanabata, Akihiro Oshima, Miki Kashiwakura, Naoto Sugino, Seiichi TagawaAbstract:From the viewpoints of the utilization of agricultural resources and advanced use of biomass, this study is aimed at expanding the resolution limits of ecofriendly ethanol-developable processes for electron-beam lithography using a positive-tone dextrin Resist Material with high hydrophilicity on a cellulose-based underlayer. The images of 20-nm-hole and 40-nm-line patterns with an exposure dose of approximately 1800 µC/cm2 were provided by ecofriendly ethanol-developable processes instead of the common development processes using tetramethylammonium hydroxide and organic solvents. The CF4 etching selectivity of the positive-tone dextrin Resist Material was approximately 10% lower than that of the polymethyl methacrylate used as a reference Resist Material.
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EB and EUV lithography using inedible cellulose-based biomass Resist Material
Advances in Patterning Materials and Processes XXXIII, 2016Co-Authors: Satoshi Takei, Takahiro Kozawa, Makoto Hanabata, Akihiro Oshima, Miki Kashiwakura, Seiichi TagawaAbstract:The validity of our approach of inedible cellulose-based Resist Material derived from woody biomass has been confirmed experimentally for the use of pure water in organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques of eco-conscious electron beam (EB) and extreme-ultraviolet (EUV) lithography. The water developable, non-chemically amplified, high sensitive, and negative tone Resist Material in EB and EUV lithography was developed for environmental affair, safety, easiness of handling, and health of the working people. The inedible cellulose-based biomass Resist Material was developed by replacing the hydroxyl groups in the beta-linked disaccharides with EB and EUV sensitive groups. The 50-100 nm line and space width, and little footing profiles of cellulose-based biomass Resist Material on hardmask and layer were resolved at the doses of 10-30 μC/cm2. The eco-conscious lithography techniques was referred to as green EB and EUV lithography using inedible cellulose-based biomass Resist Material.
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a fundamental study of the electron beam lithography beyond sub 100nm process and its application
Advanced Materials Research, 2015Co-Authors: Shiro Nagaoka, Hideo Horibe, Seiichi TagawaAbstract:It is well known that electron beam lithography is one of the potential candidates to fulfill of the demand of the miniaturization of the design rule of semiconductor integrated circuits beyond sub 100nm size with high reproducibility. It is also a fact that the resolution is recognized to depend on the various factors which are oriented to the machine and process conditions, for example, electron beam diameter, the intensity distribution of the beam itself, the Resistance properties polymers, the development conditions, etc. Therefore, it is thought that it is impossible to be derivable directly and unambiguously from the Resist Material itself. In this study, the intrinsic resolution of the Resist polymer was discussed based on the hypothesis that the resolution itself may be able to improve to the same size as the size of an electron beam profile, or less. The bi-layer structure ZEP520A/poly methyl glutar imide (PMGI) was proposed and tested. As for the results achieved, the contrast γ was improved constantly with a reduction in the development time and a decrease in the development temperature. The highest γ value, approximately 18, was obtained during development at the-20°C condition. An approximately 70nm with high aspect ratio pattern which is almost the same size of the beam pattern was obtained. This result provides an understanding how the intrinsic resolution of the Resist Material should be, and can be applied to other lithography methods. This process was applied to the actual electrode pattern making process. An approximately 100nm width of Copper nanowire as the gate electrode for the AlGaN/GaN HFET was successfully demonstrated. In addition, AlGaN/GaN HFET operated at about 73.5GHz, successfully.
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High-sensitivity green Resist Material with organic solvent-free spin-coating and tetramethylammonium hydroxide-free water-developable processes for EB and EUV lithography
Advances in Patterning Materials and Processes XXXII, 2015Co-Authors: Satoshi Takei, Takahiro Kozawa, Makoto Hanabata, Akihiro Oshima, Miki Kashiwakura, Seiichi TagawaAbstract:We investigated the eco-friendly electron beam (EB) and extreme-ultraviolet (EUV) lithography using a high-sensitive negative type of green Resist Material derived from biomass to take advantage of organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques. A water developable, non-chemically amplified, high sensitive, and negative tone Resist Material in EB lithography was developed for environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of TMAH. The Material design concept to use the water-soluble Resist Material with acceptable properties such as pillar patterns with less than 100 nm in high EB sensitivity of 10 μC/cm 2 and etch selectivity with a silicon-based middle layer in CF 4 plasma treatment was demonstrated for EB and EUV lithography.
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application of natural linear polysaccharide to green Resist polymers for electron beam and extreme ultraviolet lithography
Japanese Journal of Applied Physics, 2014Co-Authors: Satoshi Takei, Takahiro Kozawa, Akihiro Oshima, Miki Kashiwakura, Seiichi Tagawa, Tomoko Gowa Oyama, Kigen Sugahara, Kenta Ito, Makoto HanabataAbstract:The application of natural linear polysaccharide to green Resist polymers was demonstrated for electron beam (EB) and extreme-ultraviolet (EUV) lithography using organic-solvent-free water spin-coating and tetramethylammonium hydroxide (TMAH)-free water-developable techniques. The water spin-coating and water-developable processes in a green Resist Material were carried out on wafers because of the water solubility of natural polysaccharides for an environmentally friendly manufacturing process for next-generation electronic devices. The developed green Resist Material with a weight-average molecular weight of 83,000 and 70 mol % hydroxyl groups as a water-developable feature was found to have acceptable properties such as spin-coat ability on 200 mm wafers, prediction sensitivity to EUV at the wavelengths of 6.7 and 13.5 nm, a high contrast of the water dissolution rate before and after EB irradiation, pillar patterns of 100–400 nm with a high EB sensitivity of 10 µC/cm2, and etch selectivity with a silicon-based middle layer in CF4 plasma treatment.
