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Jin-feng Kang - One of the best experts on this subject based on the ideXlab platform.

  • optoelectronic Resistive random access Memory for neuromorphic vision sensors
    Nature Nanotechnology, 2019
    Co-Authors: Feichi Zhou, Jin-feng Kang, Zheng Zhou, Jiewei Chen, Tsz Hin Choy, Jingli Wang, Ning Zhang, Ziyuan Lin, H Philip S Wong, Yang Chai
    Abstract:

    Neuromorphic visual systems have considerable potential to emulate basic functions of the human visual system even beyond the visible light region. However, the complex circuitry of artificial visual systems based on conventional image sensors, Memory and processing units presents serious challenges in terms of device integration and power consumption. Here we show simple two-terminal optoelectronic Resistive random access Memory (ORRAM) synaptic devices for an efficient neuromorphic visual system that exhibit non-volatile optical Resistive switching and light-tunable synaptic behaviours. The ORRAM arrays enable image sensing and Memory functions as well as neuromorphic visual pre-processing with an improved processing efficiency and image recognition rate in the subsequent processing tasks. The proof-of-concept device provides the potential to simplify the circuitry of a neuromorphic visual system and contribute to the development of applications in edge computing and the internet of things.

  • Low-Power Resistive Switching Characteristic in HfO 2 /TiO x Bi-Layer Resistive Random-Access Memory
    Nanoscale research letters, 2019
    Co-Authors: Xiangxiang Ding, Peng Huang, Yulin Feng, Lifeng Liu, Jin-feng Kang
    Abstract:

    Resistive Random-Access Memory devices with atomic layer deposition HfO2 and radio frequency sputtering TiOx as Resistive switching layers were fabricated successfully. Low-power characteristic with 1.52 μW set power (1 μA@1.52 V) and 1.12 μW reset power (1 μA@1.12 V) was obtained in the HfO2/TiOx Resistive Random-Access Memory (RRAM) devices by controlling the oxygen content of the TiOx layer. Besides, the influence of oxygen content during the TiOx sputtering process on the Resistive switching properties would be discussed in detail. The investigations indicated that “soft breakdown” occurred easily during the electrical forming/set process in the HfO2/TiOx RRAM devices with high oxygen content of the TiOx layer, resulting in high Resistive switching power. Low-power characteristic was obtained in HfO2/TiOx RRAM devices with appropriately high oxygen vacancy density of TiOx layer, suggesting that the appropriate oxygen vacancy density in the TiOx layer could avoid “soft breakdown” through the whole dielectric layers during forming/set process, thus limiting the current flowing through the RRAM device and decreasing operating power consumption.

  • Operando diagnostic detection of interfacial oxygen ‘breathing’ of Resistive random access Memory by bulk-sensitive hard X-ray photoelectron spectroscopy
    Materials Research Letters, 2019
    Co-Authors: Gang Niu, Jin-feng Kang, Peng Huang, P. Calka, S. U. Sharath, Stefan Petzold, Andrei Gloskovskii, Karol Fröhlich, Yudi Zhao, Markus Andreas Schubert
    Abstract:

    The HfO2-based Resistive random access Memory (RRAM) is one of the most promising candidates for non-volatile Memory applications. The detection and examination of the dynamic behavior of oxygen io...

  • Solution Processed Resistive Random Access Memory Devices for Transparent Solid-State Circuit Systems
    MRS Proceedings, 2014
    Co-Authors: Wang Yiran, Bin Gao, Xiao-yan Liu, Bing Chen, Lifeng Liu, Dong Liu, Jin-feng Kang
    Abstract:

    ABSTRACTA solution-processed method is developed to fabricate fully transparent Resistive random access Memory (RRAM) devices with a configuration of FTO/ZrO2/ITO, where the zirconium dioxide (ZrO2) layer was firstly deposited on fluorine tin oxide (FTO) substrate by sol-gel and then indium tin oxide (ITO) films were deposited on ZrO2 layer by sol-gel as the top electrodes.The solution processed FTO/ZrO2/ITO based RRAM devices show the fully transparency and excellent bipolar resistance switching behaviors. The resistance ratio between high and low resistance states was more than 10, and more than 100 switching cycles and good data retention and multilevel Resistive switching have been demonstrated.

  • A SPICE model of Resistive random access Memory for large-scale Memory array simulation
    IEEE Electron Device Letters, 2014
    Co-Authors: Haitong Li, Bin Gao, Xiao-yan Liu, Peng Huang, Bing Chen, Jin-feng Kang
    Abstract:

    A SPICE model of oxide-based Resistive random access Memory (RRAM) for dc and transient behaviors is developed based on the conductive filament evolution model and is implemented in large-scale array simulation. The simulations of one transistor-one resistor RRAM array up to 16 kb with wire resistance (Rwire) and capacitance (Cwire) indicate that: 1) resistance-capacitance delay during RESET and leakage current during SET have significant impact on write operations; 2) with array size enlarging, the power dissipation increases during RESET but decreases during SET; and 3) the increased Rwire and Cwire lead to the degradation of high resistance state and the fluctuation of low resistance state, respectively.

C. J. Lin - One of the best experts on this subject based on the ideXlab platform.

  • A Contact-Resistive Random-Access-Memory-Based True Random Number Generator
    IEEE Electron Device Letters, 2012
    Co-Authors: C.-y. Huang, Y.-c. King, Y.h. Tseng, Wen Chao Shen, C. J. Lin
    Abstract:

    A new type of true random number generator, based on the random telegraph noise of a contact-Resistive random access Memory device, is proposed in this letter. The random-number generator consists of only a simple bias circuit plus a comparator, leading to small circuit area and low power consumption. By realizing this generator by the 65-nm complementary metal #x2013;oxide #x2013;semiconductor logic process, the occupied area can be as low as 45 $muhboxm^2$, demonstrating substantial saving in the circuit area.

Bin Gao - One of the best experts on this subject based on the ideXlab platform.

  • Suppression of relaxation effect in HfO2 Resistive random access Memory array by improved program operations
    Applied Physics Express, 2016
    Co-Authors: Chen Wang, Bin Gao, Ning Deng, Lingjun Dai, Deepak Chandra Sekar, Mark D. Kellam, Gary B. Bronner, He Qian
    Abstract:

    As a postprograming resistance shift, the relaxation effect could be a major issue for Resistive random access Memory (RRAM) applications. To understand the physical mechanisms of the relaxation effect, temperature-related ion and charge movements are analyzed using the incremental-step-pulse program (ISPP) and repeat-cycle program (RCP). Pre-electron detrapping (PED) operation is found to minimize the amount of interfacial trapped charges and thus to greatly reduce the resistance relaxation effect. Our experimental results demonstrate the improved data retention and tight distribution of RRAM arrays as a result of the above optimized program operations.

  • Solution Processed Resistive Random Access Memory Devices for Transparent Solid-State Circuit Systems
    MRS Proceedings, 2014
    Co-Authors: Wang Yiran, Bin Gao, Xiao-yan Liu, Bing Chen, Lifeng Liu, Dong Liu, Jin-feng Kang
    Abstract:

    ABSTRACTA solution-processed method is developed to fabricate fully transparent Resistive random access Memory (RRAM) devices with a configuration of FTO/ZrO2/ITO, where the zirconium dioxide (ZrO2) layer was firstly deposited on fluorine tin oxide (FTO) substrate by sol-gel and then indium tin oxide (ITO) films were deposited on ZrO2 layer by sol-gel as the top electrodes.The solution processed FTO/ZrO2/ITO based RRAM devices show the fully transparency and excellent bipolar resistance switching behaviors. The resistance ratio between high and low resistance states was more than 10, and more than 100 switching cycles and good data retention and multilevel Resistive switching have been demonstrated.

  • A SPICE model of Resistive random access Memory for large-scale Memory array simulation
    IEEE Electron Device Letters, 2014
    Co-Authors: Haitong Li, Bin Gao, Xiao-yan Liu, Peng Huang, Bing Chen, Jin-feng Kang
    Abstract:

    A SPICE model of oxide-based Resistive random access Memory (RRAM) for dc and transient behaviors is developed based on the conductive filament evolution model and is implemented in large-scale array simulation. The simulations of one transistor-one resistor RRAM array up to 16 kb with wire resistance (Rwire) and capacitance (Cwire) indicate that: 1) resistance-capacitance delay during RESET and leakage current during SET have significant impact on write operations; 2) with array size enlarging, the power dissipation increases during RESET but decreases during SET; and 3) the increased Rwire and Cwire lead to the degradation of high resistance state and the fluctuation of low resistance state, respectively.

  • Experimental study of plane electrode thickness scaling for 3D vertical Resistive random access Memory
    Nanotechnology, 2013
    Co-Authors: Hong Yu Chen, Bin Gao, Jin-feng Kang, Bing Chen, Zizhen Jiang, Rui Liu, Yexin Deng, Hon-sum Philip Wong
    Abstract:

    The vertical scaling for the multi-layer stacked 3D vertical Resistive random access Memory (RRAM) cross-point array is investigated. The thickness of the multi-layer stack for a 3D RRAM is a key factor for determining the storage density. A vertical RRAM cell with plane electrode thickness (tm) scaled down to 5 nm, aiming to minimize 3D stack height, is experimentally demonstrated. An improvement factor of 5 in device density can be achieved as compared to a previous demonstration using a 22 nm thick plane electrode. It is projected that 37 layers can be stacked for a lithographic half-pitch (F) = 26 nm and total thickness of one stack (T) = 21 nm, delivering a bit density of 72.8 nm2/cell.

  • Monitoring Oxygen Movement by Raman Spectroscopy of Resistive Random Access Memory with a Graphene-Inserted Electrode
    Nano letters, 2013
    Co-Authors: He Tian, Bin Gao, Jin-feng Kang, Hong Yu Chen, Yi Yang, Tian-ling Ren, Jiale Liang, Dan Xie, Yuegang Zhang
    Abstract:

    In this paper, we employed Ramen spectroscopy to monitor oxygen movement at the electrode/oxide interface by inserting single-layer graphene (SLG). Raman area mapping and single-point measurements show noticeable changes in the D-band, G-band, and 2D-band signals of the SLG during consecutive electrical programming repeated for nine cycles. In addition, the inserted SLG enables the reduction of RESET current by 22 times and programming power consumption by 47 times. Collectively, our results show that monitoring the oxygen movement by Raman spectroscopy for a Resistive random access Memory (RRAM) is made possible by inserting a single-layer graphene at electrode/oxide interface. This may open up an important analysis tool for investigation of switching mechanism of RRAM.

Wen Chao Shen - One of the best experts on this subject based on the ideXlab platform.

  • Modeling of electron conduction in contact Resistive random access Memory devices as random telegraph noise
    Journal of applied physics, 2012
    Co-Authors: Yuan Heng Tseng, Wen Chao Shen, Chrong Jung Lin
    Abstract:

    The intense development and study of Resistive random access Memory (RRAM) devices has opened a new era in semiconductor Memory manufacturing. Resistive switching and carrier conduction inside RRAM films have become critical issues in recent years. Electron trapping/detrapping behavior is observed and investigated in the proposed contact Resistive random access Memory (CR-RAM) cell. Through the fitting of the space charge limiting current (SCLC) model, and analysis in terms of the random telegraph noise (RTN) model, the temperature-dependence of resistance levels and the high-temperature data retention behavior of the contact RRAM film are successfully and completely explained. Detail analyses of the electron capture and emission from the traps by forward and reverse read measurements provide further verifications for hopping conduction mechanism and current fluctuation discrepancies.

  • A Contact-Resistive Random-Access-Memory-Based True Random Number Generator
    IEEE Electron Device Letters, 2012
    Co-Authors: C.-y. Huang, Y.-c. King, Y.h. Tseng, Wen Chao Shen, C. J. Lin
    Abstract:

    A new type of true random number generator, based on the random telegraph noise of a contact-Resistive random access Memory device, is proposed in this letter. The random-number generator consists of only a simple bias circuit plus a comparator, leading to small circuit area and low power consumption. By realizing this generator by the 65-nm complementary metal #x2013;oxide #x2013;semiconductor logic process, the occupied area can be as low as 45 $muhboxm^2$, demonstrating substantial saving in the circuit area.

Kuan-chang Chang - One of the best experts on this subject based on the ideXlab platform.

  • Nonvolatile reconfigurable sequential logic in a HfO2 Resistive random access Memory array
    Nanoscale, 2017
    Co-Authors: Ya-xiong Zhou, Kuan-chang Chang, Ting-chang Chang, Shibing Long, Zhuo-rui Wang, Ling-yi Shih, Simon M. Sze, Xiang-shui Miao
    Abstract:

    Resistive random access Memory (RRAM) based reconfigurable logic provides a temporal programmable dimension to realize Boolean logic functions and is regarded as a promising route to build non-von Neumann computing architecture. In this work, a reconfigurable operation method is proposed to perform nonvolatile sequential logic in a HfO2-based RRAM array. Eight kinds of Boolean logic functions can be implemented within the same hardware fabrics. During the logic computing processes, the RRAM devices in an array are flexibly configured in a bipolar or complementary structure. The validity was demonstrated by experimentally implemented NAND and XOR logic functions and a theoretically designed 1-bit full adder. With the trade-off between temporal and spatial computing complexity, our method makes better use of limited computing resources, thus provides an attractive scheme for the construction of logic-in-Memory systems.

  • An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory
    IEEE Electron Device Letters, 2015
    Co-Authors: Wei Zhang, Hsin-lu Chen, Kuan-chang Chang, Tsung-ming Tsai, Ting-chang Chang, Tian-jian Chu, Min-chen Chen, Hui-chun Huang
    Abstract:

    The multilevel capability of solid electrolyte Resistive random access Memory (RRAM) with a Pt/GeSO/TiN structure was explored for potential use as a synapse device. By varying the cutoff voltage during the dc $I$ – $V$ cycles or the ac pulse programming voltage amplitudes, continuous multilevel conductance states were obtained. The reference Pt/GeO/TiN RRAM was fabricated to certify the multilevel capability and was due to the character of the GeS solid electrolyte. Finally, the property of gradual conductance states was exploited to demonstrate spike-timing-dependent plasticity learning, which suggests device’s potential for use as an electronic synapse device for neuromorphic systems.

  • Ultra-high Resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped Resistive random access Memory
    Applied Physics Letters, 2014
    Co-Authors: Tsung-ming Tsai, Jung-hui Chen, Hsin-lu Chen, Hui-chun Huang, Kuan-chang Chang, Ting-chang Chang, Kai Huang Chen, Chih-cheng Shih
    Abstract:

    This study presents the dual bipolar Resistive switching characteristics induced by oxygen-ion accumulation. By introducing nitrogen to the interface between the Resistive switching region and active switching electrode, filament-type and interface-type Resistive switching behaviors can both exist under different operation conditions. This particular oxygen-ion accumulation-induced switching behavior suggests an extraordinary potential for Resistive random access Memory applications because the operating power can be significantly decreased (about 100 times). The physical mechanism of this oxygen-ion accumulation-induced interface-type Resistive switching behavior is explained by our model and clarified by current conduction mechanism and material analysis.

  • Hydrogen induced redox mechanism in amorphous carbon Resistive random access Memory.
    Nanoscale research letters, 2014
    Co-Authors: Yi-jiun Chen, Hsin-lu Chen, Kuan-chang Chang, Tsung-ming Tsai, Ting-chang Chang, Kai Huang Chen, Tai-fa Young, Rui Zhang, Jen-chung Lou, Tian-jian Chu
    Abstract:

    We investigated the bipolar Resistive switching characteristics of the Resistive random access Memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox model to clarify the Resistive switch mechanism of high/low resistance states (HRS/LRS) in carbon RRAM. The electrical conduction mechanism of LRS is attributed to conductive sp2 carbon filament with conjugation double bonds by dehydrogenation, while the electrical conduction of HRS resulted from the formation of insulating sp3-type carbon filament through hydrogenation process.

  • Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices
    IEEE Electron Device Letters, 2013
    Co-Authors: Kuan-chang Chang, Jung-hui Chen, Tsung-ming Tsai, Ting-chang Chang, Kai Huang Chen, Tai-fa Young, Tian-jian Chu, Jian-yu Chen, Chih-hung Pan
    Abstract:

    To improve the Resistive switching properties of the Resistive random access Memory (RRAM), the supercritical carbon dioxide (SCCO2) fluid is used as a low temperature treatment. In this letter, the Zn:SiOx thin films are treated by SCCO2 fluid mixed with pure water. After SCCO2 fluid treatment, the Resistive switching qualities of the Zn:SiOx thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO2-treated Zn:SiOx thin film is a proResistive switching properties mising material for RRAM applications due to its compatibility with portable flat panel display.