The Experts below are selected from a list of 13692 Experts worldwide ranked by ideXlab platform
Huili Grace Xing - One of the best experts on this subject based on the ideXlab platform.
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molecular beam epitaxy of polar iii nitride Resonant Tunneling diodes
Journal of Vacuum Science and Technology, 2021Co-Authors: Jimy Encomendero, Debdeep Jena, S M Islam, Huili Grace XingAbstract:Advances in molecular beam epitaxy (MBE) have been crucial for the engineering of heterostructures in which the wave nature of electrons dictates carrier transport dynamics. These advances led to the first demonstration of negative differential conductance (NDC) in arsenide-based Resonant Tunneling diodes (RTDs) in 1974. In contrast to the 17 years elapsed between the initial MBE growth of arsenide semiconductors and the first demonstration of room-temperature GaAs/AlAs RTDs, the development of polar III-nitride RTDs has been remarkably different. After pioneering growths of nitride materials by MBE in 1973, it would take 43 years—until 2016—to demonstrate the first GaN/AlN RTD that exhibits repeatable NDC at room temperature. Here, we discuss, from the crystal growth point of view, the key developments in the epitaxy of III-nitride heterostructures that have led us to the demonstration of robust Resonant Tunneling transport and reliable NDC in III-nitride semiconductors. We show that in situ tracking of the crystal electron diffraction allows us to deterministically control the number of monolayers incorporated into the Tunneling barriers of the active region. Employing this technique, we fabricate various GaN/AlN RTD designs showing the exponential enhancement of the Resonant Tunneling current as a function of barrier thickness. In addition, we experimentally demonstrate that Tunneling transport in nitride RTDs is sensitive to epitaxial parameters such as the substrate growth temperature and threading dislocation density. This new insight into the MBE growth of nitride Resonant Tunneling devices represents a significant step forward in the engineering of new functionalities within the family of III-nitride semiconductors, allowing to harness quantum interference effects for the new generation of electronic and photonic devices.
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n polar gan aln Resonant Tunneling diodes
arXiv: Materials Science, 2020Co-Authors: Yongjin Cho, Jimy Encomendero, Huili Grace Xing, Debdeep JenaAbstract:N-polar GaN/AlN Resonant Tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-voltage characteristics reveal a negative differential conductance (NDC) region with a peak Tunneling current of 6.8$\pm$ 0.8 kA/cm$^2$ at a forward bias of ~8 V. Under reverse bias, the polarization-induced threshold voltage is measured at ~$-$4 V. These Resonant and threshold voltages are well explained with the polarization field which is opposite to that of the metal-polar counterpart, confirming the N-polarity of the RTDs. When the device is biased in the NDC-region, electronic oscillations are generated in the external circuit, attesting to the robustness of the Resonant Tunneling phenomenon. In contrast to metal-polar RTDs, N-polar structures have the emitter on the top of the Resonant Tunneling cavity. As a consequence, this device architecture opens up the possibility of seamlessly interfacing$-$via Resonant Tunneling injection$-$a wide range of exotic materials with III-nitride semiconductors, providing a route to explore new device physics.
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n polar gan aln Resonant Tunneling diodes
Applied Physics Letters, 2020Co-Authors: Yongjin Cho, Jimy Encomendero, Huili Grace Xing, Debdeep JenaAbstract:N-polar GaN/AlN Resonant Tunneling diodes are realized on a single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current–voltage characteristics reveal a negative differential conductance (NDC) region with a peak Tunneling current of 6.8 ± 0.8 kA/cm2 at a forward bias of ∼8 V. Under reverse bias, the polarization-induced threshold voltage is measured at ∼ − 4 V. These Resonant and threshold voltages are well explained with the polarization field, which is opposite to that of the metal-polar counterpart, confirming the N-polarity of the Resonant Tunneling diodes (RTDs). When the device is biased in the NDC-region, electronic oscillations are generated in the external circuit, attesting to the robustness of the Resonant Tunneling phenomenon. In contrast to metal-polar RTDs, N-polar structures have the emitter on the top of the Resonant Tunneling cavity. As a consequence, this device architecture opens up the possibility of seamlessly interfacing—via Resonant Tunneling injection—a wide range of exotic materials with III-nitride semiconductors, providing a route towards unexplored device physics.
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fighting broken symmetry with doping toward polar Resonant Tunneling diodes with symmetric characteristics
Physical review applied, 2020Co-Authors: Jimy Encomendero, Debdeep Jena, Vladimir Protasenko, Farhan Rana, Huili Grace XingAbstract:The recent demonstration of Resonant Tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers leads to asymmetric transport characteristics. Here, we investigate the possibility of using degenerately doped contact layers to screen the built-in polarization fields and recover symmetric Resonant injection. Thanks to a high doping density, negative differential conductance is observed under both bias polarities of $\mathrm{Ga}\mathrm{N}$/$\mathrm{Al}\mathrm{N}$ Resonant Tunneling diodes (RTDs). Moreover, our analytical model reveals a lower bound for the minimum Resonant-Tunneling voltage achieved via uniform doping, owing to the dopant solubility limit. Charge storage dynamics is also studied by impedance measurements, showing that at close-to-equilibrium conditions, polar RTDs behave effectively as parallel-plate capacitors. These mechanisms are completely reproduced by our analytical model, providing a theoretical framework useful in the design and analysis of polar Resonant-Tunneling devices.
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new physics in gan Resonant Tunneling diodes
Gallium Nitride Materials and Devices XIV, 2019Co-Authors: Huili Grace Xing, Jimy Encomendero, Debdeep JenaAbstract:The outstanding material properties of III-Nitride semiconductors, has prompted intense research efforts in order to engineer Resonant Tunneling transport within this revolutionary family of wide-bandgap semiconductors. From Resonant Tunneling diode (RTD) oscillators to quantum cascade lasers (QCLs), III-Nitride heterostructures hold the promise for the realization of high-power ultra-fast sources of terahertz (THz) radiation. However, despite the considerable efforts over last two decades, it is only during the last three years that room temperature Resonant Tunneling transport has been demonstrated within the III-Nitride family of semiconductors. In this paper we present an overview of our current understanding of Resonant Tunneling transport in polar heterostructures. In particular we focus on double-barrier III-Nitride RTDs which represents the simplest device in which the dramatic effects of the internal polarization fields can be studied. Tunneling transport within III-heterostructures is strongly influenced by the presence of the intense spontaneous and piezoelectric polarization fields which result from the non-centrosymmetric crystal structure of III-Nitride semiconductors. Advances in heterostructure design, epitaxial growth and device fabrication have led to the first unequivocal demonstration of robust and reliable negative differential conductance. which has been employed for the generation of microwave power from III-Nitride RTD oscillator. These significant advances allowed us to shed light into the physics of Resonant Tunneling transport in polar semiconductors which had remained hidden until now.
Debdeep Jena - One of the best experts on this subject based on the ideXlab platform.
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molecular beam epitaxy of polar iii nitride Resonant Tunneling diodes
Journal of Vacuum Science and Technology, 2021Co-Authors: Jimy Encomendero, Debdeep Jena, S M Islam, Huili Grace XingAbstract:Advances in molecular beam epitaxy (MBE) have been crucial for the engineering of heterostructures in which the wave nature of electrons dictates carrier transport dynamics. These advances led to the first demonstration of negative differential conductance (NDC) in arsenide-based Resonant Tunneling diodes (RTDs) in 1974. In contrast to the 17 years elapsed between the initial MBE growth of arsenide semiconductors and the first demonstration of room-temperature GaAs/AlAs RTDs, the development of polar III-nitride RTDs has been remarkably different. After pioneering growths of nitride materials by MBE in 1973, it would take 43 years—until 2016—to demonstrate the first GaN/AlN RTD that exhibits repeatable NDC at room temperature. Here, we discuss, from the crystal growth point of view, the key developments in the epitaxy of III-nitride heterostructures that have led us to the demonstration of robust Resonant Tunneling transport and reliable NDC in III-nitride semiconductors. We show that in situ tracking of the crystal electron diffraction allows us to deterministically control the number of monolayers incorporated into the Tunneling barriers of the active region. Employing this technique, we fabricate various GaN/AlN RTD designs showing the exponential enhancement of the Resonant Tunneling current as a function of barrier thickness. In addition, we experimentally demonstrate that Tunneling transport in nitride RTDs is sensitive to epitaxial parameters such as the substrate growth temperature and threading dislocation density. This new insight into the MBE growth of nitride Resonant Tunneling devices represents a significant step forward in the engineering of new functionalities within the family of III-nitride semiconductors, allowing to harness quantum interference effects for the new generation of electronic and photonic devices.
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n polar gan aln Resonant Tunneling diodes
arXiv: Materials Science, 2020Co-Authors: Yongjin Cho, Jimy Encomendero, Huili Grace Xing, Debdeep JenaAbstract:N-polar GaN/AlN Resonant Tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-voltage characteristics reveal a negative differential conductance (NDC) region with a peak Tunneling current of 6.8$\pm$ 0.8 kA/cm$^2$ at a forward bias of ~8 V. Under reverse bias, the polarization-induced threshold voltage is measured at ~$-$4 V. These Resonant and threshold voltages are well explained with the polarization field which is opposite to that of the metal-polar counterpart, confirming the N-polarity of the RTDs. When the device is biased in the NDC-region, electronic oscillations are generated in the external circuit, attesting to the robustness of the Resonant Tunneling phenomenon. In contrast to metal-polar RTDs, N-polar structures have the emitter on the top of the Resonant Tunneling cavity. As a consequence, this device architecture opens up the possibility of seamlessly interfacing$-$via Resonant Tunneling injection$-$a wide range of exotic materials with III-nitride semiconductors, providing a route to explore new device physics.
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n polar gan aln Resonant Tunneling diodes
Applied Physics Letters, 2020Co-Authors: Yongjin Cho, Jimy Encomendero, Huili Grace Xing, Debdeep JenaAbstract:N-polar GaN/AlN Resonant Tunneling diodes are realized on a single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current–voltage characteristics reveal a negative differential conductance (NDC) region with a peak Tunneling current of 6.8 ± 0.8 kA/cm2 at a forward bias of ∼8 V. Under reverse bias, the polarization-induced threshold voltage is measured at ∼ − 4 V. These Resonant and threshold voltages are well explained with the polarization field, which is opposite to that of the metal-polar counterpart, confirming the N-polarity of the Resonant Tunneling diodes (RTDs). When the device is biased in the NDC-region, electronic oscillations are generated in the external circuit, attesting to the robustness of the Resonant Tunneling phenomenon. In contrast to metal-polar RTDs, N-polar structures have the emitter on the top of the Resonant Tunneling cavity. As a consequence, this device architecture opens up the possibility of seamlessly interfacing—via Resonant Tunneling injection—a wide range of exotic materials with III-nitride semiconductors, providing a route towards unexplored device physics.
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fighting broken symmetry with doping toward polar Resonant Tunneling diodes with symmetric characteristics
Physical review applied, 2020Co-Authors: Jimy Encomendero, Debdeep Jena, Vladimir Protasenko, Farhan Rana, Huili Grace XingAbstract:The recent demonstration of Resonant Tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers leads to asymmetric transport characteristics. Here, we investigate the possibility of using degenerately doped contact layers to screen the built-in polarization fields and recover symmetric Resonant injection. Thanks to a high doping density, negative differential conductance is observed under both bias polarities of $\mathrm{Ga}\mathrm{N}$/$\mathrm{Al}\mathrm{N}$ Resonant Tunneling diodes (RTDs). Moreover, our analytical model reveals a lower bound for the minimum Resonant-Tunneling voltage achieved via uniform doping, owing to the dopant solubility limit. Charge storage dynamics is also studied by impedance measurements, showing that at close-to-equilibrium conditions, polar RTDs behave effectively as parallel-plate capacitors. These mechanisms are completely reproduced by our analytical model, providing a theoretical framework useful in the design and analysis of polar Resonant-Tunneling devices.
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new physics in gan Resonant Tunneling diodes
Gallium Nitride Materials and Devices XIV, 2019Co-Authors: Huili Grace Xing, Jimy Encomendero, Debdeep JenaAbstract:The outstanding material properties of III-Nitride semiconductors, has prompted intense research efforts in order to engineer Resonant Tunneling transport within this revolutionary family of wide-bandgap semiconductors. From Resonant Tunneling diode (RTD) oscillators to quantum cascade lasers (QCLs), III-Nitride heterostructures hold the promise for the realization of high-power ultra-fast sources of terahertz (THz) radiation. However, despite the considerable efforts over last two decades, it is only during the last three years that room temperature Resonant Tunneling transport has been demonstrated within the III-Nitride family of semiconductors. In this paper we present an overview of our current understanding of Resonant Tunneling transport in polar heterostructures. In particular we focus on double-barrier III-Nitride RTDs which represents the simplest device in which the dramatic effects of the internal polarization fields can be studied. Tunneling transport within III-heterostructures is strongly influenced by the presence of the intense spontaneous and piezoelectric polarization fields which result from the non-centrosymmetric crystal structure of III-Nitride semiconductors. Advances in heterostructure design, epitaxial growth and device fabrication have led to the first unequivocal demonstration of robust and reliable negative differential conductance. which has been employed for the generation of microwave power from III-Nitride RTD oscillator. These significant advances allowed us to shed light into the physics of Resonant Tunneling transport in polar semiconductors which had remained hidden until now.
Jimy Encomendero - One of the best experts on this subject based on the ideXlab platform.
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molecular beam epitaxy of polar iii nitride Resonant Tunneling diodes
Journal of Vacuum Science and Technology, 2021Co-Authors: Jimy Encomendero, Debdeep Jena, S M Islam, Huili Grace XingAbstract:Advances in molecular beam epitaxy (MBE) have been crucial for the engineering of heterostructures in which the wave nature of electrons dictates carrier transport dynamics. These advances led to the first demonstration of negative differential conductance (NDC) in arsenide-based Resonant Tunneling diodes (RTDs) in 1974. In contrast to the 17 years elapsed between the initial MBE growth of arsenide semiconductors and the first demonstration of room-temperature GaAs/AlAs RTDs, the development of polar III-nitride RTDs has been remarkably different. After pioneering growths of nitride materials by MBE in 1973, it would take 43 years—until 2016—to demonstrate the first GaN/AlN RTD that exhibits repeatable NDC at room temperature. Here, we discuss, from the crystal growth point of view, the key developments in the epitaxy of III-nitride heterostructures that have led us to the demonstration of robust Resonant Tunneling transport and reliable NDC in III-nitride semiconductors. We show that in situ tracking of the crystal electron diffraction allows us to deterministically control the number of monolayers incorporated into the Tunneling barriers of the active region. Employing this technique, we fabricate various GaN/AlN RTD designs showing the exponential enhancement of the Resonant Tunneling current as a function of barrier thickness. In addition, we experimentally demonstrate that Tunneling transport in nitride RTDs is sensitive to epitaxial parameters such as the substrate growth temperature and threading dislocation density. This new insight into the MBE growth of nitride Resonant Tunneling devices represents a significant step forward in the engineering of new functionalities within the family of III-nitride semiconductors, allowing to harness quantum interference effects for the new generation of electronic and photonic devices.
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n polar gan aln Resonant Tunneling diodes
arXiv: Materials Science, 2020Co-Authors: Yongjin Cho, Jimy Encomendero, Huili Grace Xing, Debdeep JenaAbstract:N-polar GaN/AlN Resonant Tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-voltage characteristics reveal a negative differential conductance (NDC) region with a peak Tunneling current of 6.8$\pm$ 0.8 kA/cm$^2$ at a forward bias of ~8 V. Under reverse bias, the polarization-induced threshold voltage is measured at ~$-$4 V. These Resonant and threshold voltages are well explained with the polarization field which is opposite to that of the metal-polar counterpart, confirming the N-polarity of the RTDs. When the device is biased in the NDC-region, electronic oscillations are generated in the external circuit, attesting to the robustness of the Resonant Tunneling phenomenon. In contrast to metal-polar RTDs, N-polar structures have the emitter on the top of the Resonant Tunneling cavity. As a consequence, this device architecture opens up the possibility of seamlessly interfacing$-$via Resonant Tunneling injection$-$a wide range of exotic materials with III-nitride semiconductors, providing a route to explore new device physics.
-
n polar gan aln Resonant Tunneling diodes
Applied Physics Letters, 2020Co-Authors: Yongjin Cho, Jimy Encomendero, Huili Grace Xing, Debdeep JenaAbstract:N-polar GaN/AlN Resonant Tunneling diodes are realized on a single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current–voltage characteristics reveal a negative differential conductance (NDC) region with a peak Tunneling current of 6.8 ± 0.8 kA/cm2 at a forward bias of ∼8 V. Under reverse bias, the polarization-induced threshold voltage is measured at ∼ − 4 V. These Resonant and threshold voltages are well explained with the polarization field, which is opposite to that of the metal-polar counterpart, confirming the N-polarity of the Resonant Tunneling diodes (RTDs). When the device is biased in the NDC-region, electronic oscillations are generated in the external circuit, attesting to the robustness of the Resonant Tunneling phenomenon. In contrast to metal-polar RTDs, N-polar structures have the emitter on the top of the Resonant Tunneling cavity. As a consequence, this device architecture opens up the possibility of seamlessly interfacing—via Resonant Tunneling injection—a wide range of exotic materials with III-nitride semiconductors, providing a route towards unexplored device physics.
-
fighting broken symmetry with doping toward polar Resonant Tunneling diodes with symmetric characteristics
Physical review applied, 2020Co-Authors: Jimy Encomendero, Debdeep Jena, Vladimir Protasenko, Farhan Rana, Huili Grace XingAbstract:The recent demonstration of Resonant Tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers leads to asymmetric transport characteristics. Here, we investigate the possibility of using degenerately doped contact layers to screen the built-in polarization fields and recover symmetric Resonant injection. Thanks to a high doping density, negative differential conductance is observed under both bias polarities of $\mathrm{Ga}\mathrm{N}$/$\mathrm{Al}\mathrm{N}$ Resonant Tunneling diodes (RTDs). Moreover, our analytical model reveals a lower bound for the minimum Resonant-Tunneling voltage achieved via uniform doping, owing to the dopant solubility limit. Charge storage dynamics is also studied by impedance measurements, showing that at close-to-equilibrium conditions, polar RTDs behave effectively as parallel-plate capacitors. These mechanisms are completely reproduced by our analytical model, providing a theoretical framework useful in the design and analysis of polar Resonant-Tunneling devices.
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new physics in gan Resonant Tunneling diodes
Gallium Nitride Materials and Devices XIV, 2019Co-Authors: Huili Grace Xing, Jimy Encomendero, Debdeep JenaAbstract:The outstanding material properties of III-Nitride semiconductors, has prompted intense research efforts in order to engineer Resonant Tunneling transport within this revolutionary family of wide-bandgap semiconductors. From Resonant Tunneling diode (RTD) oscillators to quantum cascade lasers (QCLs), III-Nitride heterostructures hold the promise for the realization of high-power ultra-fast sources of terahertz (THz) radiation. However, despite the considerable efforts over last two decades, it is only during the last three years that room temperature Resonant Tunneling transport has been demonstrated within the III-Nitride family of semiconductors. In this paper we present an overview of our current understanding of Resonant Tunneling transport in polar heterostructures. In particular we focus on double-barrier III-Nitride RTDs which represents the simplest device in which the dramatic effects of the internal polarization fields can be studied. Tunneling transport within III-heterostructures is strongly influenced by the presence of the intense spontaneous and piezoelectric polarization fields which result from the non-centrosymmetric crystal structure of III-Nitride semiconductors. Advances in heterostructure design, epitaxial growth and device fabrication have led to the first unequivocal demonstration of robust and reliable negative differential conductance. which has been employed for the generation of microwave power from III-Nitride RTD oscillator. These significant advances allowed us to shed light into the physics of Resonant Tunneling transport in polar semiconductors which had remained hidden until now.
Yanhua Zhang - One of the best experts on this subject based on the ideXlab platform.
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long wavelength type ii inas gasb superlattice photodetector using Resonant Tunneling diode structure
IEEE Electron Device Letters, 2020Co-Authors: Jianliang Huang, Chengcheng Zhao, Yanhua ZhangAbstract:We report on a long wavelength type-II InAs/GaSb superlattice photodetector using Resonant Tunneling diode (RTD) structure. The linewidth of the satellite peak of the x-ray diffraction curve of the as-grown sample is only 15.7 arcsec showing a very high structural quality. The response maximum wavelength of the RTD detector is $7.5~\mu \text{m}$ and the 50% cutoff wavelength is $9.6~\mu \text{m}$ at 77 K. The measured QE is 147% at $7.5~\mu \text{m}$ when the applied bias voltage is 1.45 V and the corresponding responsivity is 8.9 A/W. This unusual QE is attributed to a large gain achieved when the device is under a Resonant Tunneling condition. The corresponding shot noise limited detectivity D* is $1.2\times 10^{10}\text {cm}\cdot \sqrt {Hz}/W$ at 1.45 V at 77 K.
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inas gasb superlattice Resonant Tunneling diode photodetector with inas alsb double barrier structure
Applied Physics Letters, 2019Co-Authors: Jianliang Huang, Chengcheng Zhao, Wenjun Huang, Yanhua ZhangAbstract:We report on a Resonant Tunneling diode (RTD) photodetector using type-II InAs/GaSb superlattices with an InAs/AlSb double barrier structure. At 80 K, the maximum response of the detector is at about 4.0 μm and the 50% cutoff wavelength is 4.8 μm. The Resonant Tunneling mechanism is confirmed by observing the negative differential resistance (NDR) phenomenon. The detector is also tested under illumination by a laser with a wavelength of 3.3 μm. A significant photocurrent and NDR peak shift are observed when changing the laser illumination power. The internal multiplication factor, which means how many excess electrons can be triggered by one absorbed photon, is estimated to be 1.01 × 105 at 4.9 V and is 1.90 × 103 at 1.4 V.We report on a Resonant Tunneling diode (RTD) photodetector using type-II InAs/GaSb superlattices with an InAs/AlSb double barrier structure. At 80 K, the maximum response of the detector is at about 4.0 μm and the 50% cutoff wavelength is 4.8 μm. The Resonant Tunneling mechanism is confirmed by observing the negative differential resistance (NDR) phenomenon. The detector is also tested under illumination by a laser with a wavelength of 3.3 μm. A significant photocurrent and NDR peak shift are observed when changing the laser illumination power. The internal multiplication factor, which means how many excess electrons can be triggered by one absorbed photon, is estimated to be 1.01 × 105 at 4.9 V and is 1.90 × 103 at 1.4 V.
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inas gasb superlattice Resonant Tunneling diode photodetector with inas alsb double barrier structure
Applied Physics Letters, 2019Co-Authors: Biying Nie, Jianliang Huang, Chengcheng Zhao, Wenjun Huang, Yanhua Zhang, Yulian CaoAbstract:We report on a Resonant Tunneling diode (RTD) photodetector using type-II InAs/GaSb superlattices with an InAs/AlSb double barrier structure. At 80 K, the maximum response of the detector is at about 4.0 μm and the 50% cutoff wavelength is 4.8 μm. The Resonant Tunneling mechanism is confirmed by observing the negative differential resistance (NDR) phenomenon. The detector is also tested under illumination by a laser with a wavelength of 3.3 μm. A significant photocurrent and NDR peak shift are observed when changing the laser illumination power. The internal multiplication factor, which means how many excess electrons can be triggered by one absorbed photon, is estimated to be 1.01 × 105 at 4.9 V and is 1.90 × 103 at 1.4 V.
Jianliang Huang - One of the best experts on this subject based on the ideXlab platform.
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long wavelength type ii inas gasb superlattice photodetector using Resonant Tunneling diode structure
IEEE Electron Device Letters, 2020Co-Authors: Jianliang Huang, Chengcheng Zhao, Yanhua ZhangAbstract:We report on a long wavelength type-II InAs/GaSb superlattice photodetector using Resonant Tunneling diode (RTD) structure. The linewidth of the satellite peak of the x-ray diffraction curve of the as-grown sample is only 15.7 arcsec showing a very high structural quality. The response maximum wavelength of the RTD detector is $7.5~\mu \text{m}$ and the 50% cutoff wavelength is $9.6~\mu \text{m}$ at 77 K. The measured QE is 147% at $7.5~\mu \text{m}$ when the applied bias voltage is 1.45 V and the corresponding responsivity is 8.9 A/W. This unusual QE is attributed to a large gain achieved when the device is under a Resonant Tunneling condition. The corresponding shot noise limited detectivity D* is $1.2\times 10^{10}\text {cm}\cdot \sqrt {Hz}/W$ at 1.45 V at 77 K.
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inas gasb superlattice Resonant Tunneling diode photodetector with inas alsb double barrier structure
Applied Physics Letters, 2019Co-Authors: Jianliang Huang, Chengcheng Zhao, Wenjun Huang, Yanhua ZhangAbstract:We report on a Resonant Tunneling diode (RTD) photodetector using type-II InAs/GaSb superlattices with an InAs/AlSb double barrier structure. At 80 K, the maximum response of the detector is at about 4.0 μm and the 50% cutoff wavelength is 4.8 μm. The Resonant Tunneling mechanism is confirmed by observing the negative differential resistance (NDR) phenomenon. The detector is also tested under illumination by a laser with a wavelength of 3.3 μm. A significant photocurrent and NDR peak shift are observed when changing the laser illumination power. The internal multiplication factor, which means how many excess electrons can be triggered by one absorbed photon, is estimated to be 1.01 × 105 at 4.9 V and is 1.90 × 103 at 1.4 V.We report on a Resonant Tunneling diode (RTD) photodetector using type-II InAs/GaSb superlattices with an InAs/AlSb double barrier structure. At 80 K, the maximum response of the detector is at about 4.0 μm and the 50% cutoff wavelength is 4.8 μm. The Resonant Tunneling mechanism is confirmed by observing the negative differential resistance (NDR) phenomenon. The detector is also tested under illumination by a laser with a wavelength of 3.3 μm. A significant photocurrent and NDR peak shift are observed when changing the laser illumination power. The internal multiplication factor, which means how many excess electrons can be triggered by one absorbed photon, is estimated to be 1.01 × 105 at 4.9 V and is 1.90 × 103 at 1.4 V.
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inas gasb superlattice Resonant Tunneling diode photodetector with inas alsb double barrier structure
Applied Physics Letters, 2019Co-Authors: Biying Nie, Jianliang Huang, Chengcheng Zhao, Wenjun Huang, Yanhua Zhang, Yulian CaoAbstract:We report on a Resonant Tunneling diode (RTD) photodetector using type-II InAs/GaSb superlattices with an InAs/AlSb double barrier structure. At 80 K, the maximum response of the detector is at about 4.0 μm and the 50% cutoff wavelength is 4.8 μm. The Resonant Tunneling mechanism is confirmed by observing the negative differential resistance (NDR) phenomenon. The detector is also tested under illumination by a laser with a wavelength of 3.3 μm. A significant photocurrent and NDR peak shift are observed when changing the laser illumination power. The internal multiplication factor, which means how many excess electrons can be triggered by one absorbed photon, is estimated to be 1.01 × 105 at 4.9 V and is 1.90 × 103 at 1.4 V.
