Sallen Key

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A Baschirotto - One of the best experts on this subject based on the ideXlab platform.

  • A 28.8-MHz 23-dBm-IIP3 3.2-mW Sallen-Key Fourth-Order Filter With Out-of-Band Zeros Cancellation
    IEEE Transactions on Circuits and Systems Ii-express Briefs, 2016
    Co-Authors: Marcello De Matteis, F Resta, Stefano D'amico, A. Pipino, A Baschirotto
    Abstract:

    In this brief, a 28.8-MHz −3-dB frequency low-pass analog filter is presented. The filter synthesizes a fourth-order Butterworth transfer function, exploiting the well-known Sallen-Key (SK) biquadratic cell. The out-of-band zeros typically present in SK implementations are hereby completely canceled by using a low-power auxiliary path. This leads to a significant improvement of the stop-band rejection, at the cost of a small power for the same auxiliary path biasing. The design exhibits very large in-band IIP3 over the entire filter bandwidth (20 dBm at 10 MHz and 11 MHz), at 3.2-mW power consumption. The filter prototype has been designed in CMOS 0.18- $ {\mu }\text{m}$ technological node. The total area occupancy is 0.12 mm $^{ {2}}$ and the in-band integrated noise is $101~ {\mu }{\mathrm{V}}_{\mathrm{RMS}}$ .

  • ISCAS - A 28.8MHz 21.1dBm-IIP3 3.2mW Sallen-Key 4th-Order filter with out-of-band zeros cancellation
    2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016
    Co-Authors: M De Matteis, F Resta, Stefano D'amico, A. Pipino, A Baschirotto
    Abstract:

    A 4th-order 28.8MHz low-pass analog filter uses a modified version of Sallen-Key (SK) biquad that solves the standard SK cell critical aspect due to the out-of-band zeros (OoB). The proposed cell completely cancel the OoB zeros by means of a low-power auxiliary path and a specific design optimization.

  • NEWCAS - A 30MHz 28dBm-IIP3 3.2mW fully-differential Sallen-Key 4 th -order filter with out-of-band zeros cancellation
    2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS), 2015
    Co-Authors: F Resta, M De Matteis, Stefano D'amico, A. Pezzotta, A Baschirotto
    Abstract:

    In this paper a 4th-order 30MHz Butterworth low-pass analog filter is presented, exploiting the Sallen-Key (SK) biquadratic cell circuit. The out-of-band zeros typically present in SK cells, are cancelled by using a low-power auxiliary path, resulting in a significant improvement of the stopband rejection, at the cost of a small power budget for the same auxiliary path biasing. An efficient unity gain buffer has been used, based on super-source-follower stage, providing very large in-band IIP3 over the entire filter bandwidth (21.5dBm for 25MHz&26MHz input tones), at 3.2mW power consumption from a single 1.8V supply voltage. The filter prototype has been designed in CMOS 0.18μm tech. The total area occupancy is 0.12mm2, the in-band integrated noise is 197μVRMS.

  • an improved source follower based Sallen Key continuous time biquadratic cell with auxiliary path
    NORCHIP, 2014
    Co-Authors: F Resta, S Damico, M De Matteis, A Baschirotto
    Abstract:

    An improved Source Follower based low-pass Sallen-Key continuous time biquadratic cell is presented. An innovative structure with auxiliary path is proposed in order to increase the out-of-band attenuation of Sallen-Key filter. The auxiliary path eliminates one out-of-band parasitic zero in the transfer function. A prototype of Sallen-Key second order filter with a bandwidth of 120MHz and a quality factor of 1.19 has been designed in a standard 0.35μιη technology occupying 390μιη X 222μm area. A 75dB HD3 for a IV input signal and 50dB out-of-band attenuation at 3.2GHz are the filter peculiarity. The cutoff frequency deviation due to technological spread, aging and temperature variation is adjusted by using 4-bits capacitors arrays.

  • NORCHIP - An improved source-follower based Sallen-Key continuous-time biquadratic cell with auxiliary path
    2014 NORCHIP, 2014
    Co-Authors: F Resta, M De Matteis, Stefano D'amico, A Baschirotto
    Abstract:

    An improved Source Follower based low-pass Sallen-Key continuous time biquadratic cell is presented. An innovative structure with auxiliary path is proposed in order to increase the out-of-band attenuation of Sallen-Key filter. The auxiliary path eliminates one out-of-band parasitic zero in the transfer function. A prototype of Sallen-Key second order filter with a bandwidth of 120MHz and a quality factor of 1.19 has been designed in a standard 0.35μιη technology occupying 390μιη X 222μm area. A 75dB HD3 for a IV input signal and 50dB out-of-band attenuation at 3.2GHz are the filter peculiarity. The cutoff frequency deviation due to technological spread, aging and temperature variation is adjusted by using 4-bits capacitors arrays.

F Resta - One of the best experts on this subject based on the ideXlab platform.

  • A 28.8-MHz 23-dBm-IIP3 3.2-mW Sallen-Key Fourth-Order Filter With Out-of-Band Zeros Cancellation
    IEEE Transactions on Circuits and Systems Ii-express Briefs, 2016
    Co-Authors: Marcello De Matteis, F Resta, Stefano D'amico, A. Pipino, A Baschirotto
    Abstract:

    In this brief, a 28.8-MHz −3-dB frequency low-pass analog filter is presented. The filter synthesizes a fourth-order Butterworth transfer function, exploiting the well-known Sallen-Key (SK) biquadratic cell. The out-of-band zeros typically present in SK implementations are hereby completely canceled by using a low-power auxiliary path. This leads to a significant improvement of the stop-band rejection, at the cost of a small power for the same auxiliary path biasing. The design exhibits very large in-band IIP3 over the entire filter bandwidth (20 dBm at 10 MHz and 11 MHz), at 3.2-mW power consumption. The filter prototype has been designed in CMOS 0.18- $ {\mu }\text{m}$ technological node. The total area occupancy is 0.12 mm $^{ {2}}$ and the in-band integrated noise is $101~ {\mu }{\mathrm{V}}_{\mathrm{RMS}}$ .

  • ISCAS - A 28.8MHz 21.1dBm-IIP3 3.2mW Sallen-Key 4th-Order filter with out-of-band zeros cancellation
    2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016
    Co-Authors: M De Matteis, F Resta, Stefano D'amico, A. Pipino, A Baschirotto
    Abstract:

    A 4th-order 28.8MHz low-pass analog filter uses a modified version of Sallen-Key (SK) biquad that solves the standard SK cell critical aspect due to the out-of-band zeros (OoB). The proposed cell completely cancel the OoB zeros by means of a low-power auxiliary path and a specific design optimization.

  • a 28 8mhz 21 1dbm iip3 3 2mw Sallen Key 4th order filter with out of band zeros cancellation
    International Symposium on Circuits and Systems, 2016
    Co-Authors: M De Matteis, F Resta, S Damico, A. Pipino, A Baschirotto
    Abstract:

    A 4th-order 28.8MHz low-pass analog filter uses a modified version of Sallen-Key (SK) biquad that solves the standard SK cell critical aspect due to the out-of-band zeros (OoB). The proposed cell completely cancel the OoB zeros by means of a low-power auxiliary path and a specific design optimization.

  • NEWCAS - A 30MHz 28dBm-IIP3 3.2mW fully-differential Sallen-Key 4 th -order filter with out-of-band zeros cancellation
    2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS), 2015
    Co-Authors: F Resta, M De Matteis, Stefano D'amico, A. Pezzotta, A Baschirotto
    Abstract:

    In this paper a 4th-order 30MHz Butterworth low-pass analog filter is presented, exploiting the Sallen-Key (SK) biquadratic cell circuit. The out-of-band zeros typically present in SK cells, are cancelled by using a low-power auxiliary path, resulting in a significant improvement of the stopband rejection, at the cost of a small power budget for the same auxiliary path biasing. An efficient unity gain buffer has been used, based on super-source-follower stage, providing very large in-band IIP3 over the entire filter bandwidth (21.5dBm for 25MHz&26MHz input tones), at 3.2mW power consumption from a single 1.8V supply voltage. The filter prototype has been designed in CMOS 0.18μm tech. The total area occupancy is 0.12mm2, the in-band integrated noise is 197μVRMS.

  • a 30mhz 28dbm iip3 3 2mw fully differential Sallen Key 4 th order filter with out of band zeros cancellation
    International New Circuits and Systems Conference, 2015
    Co-Authors: F Resta, S Damico, M De Matteis, A. Pezzotta, A Baschirotto
    Abstract:

    In this paper a 4th-order 30MHz Butterworth low-pass analog filter is presented, exploiting the Sallen-Key (SK) biquadratic cell circuit. The out-of-band zeros typically present in SK cells, are cancelled by using a low-power auxiliary path, resulting in a significant improvement of the stopband rejection, at the cost of a small power budget for the same auxiliary path biasing. An efficient unity gain buffer has been used, based on super-source-follower stage, providing very large in-band IIP3 over the entire filter bandwidth (21.5dBm for 25MHz&26MHz input tones), at 3.2mW power consumption from a single 1.8V supply voltage. The filter prototype has been designed in CMOS 0.18μm tech. The total area occupancy is 0.12mm2, the in-band integrated noise is 197μVRMS.

H. Hakan Kuntman - One of the best experts on this subject based on the ideXlab platform.

  • Ultra low-voltage ultra low-power memristor based band-pass filter design and its application to EEG signal processing
    Analog Integrated Circuits and Signal Processing, 2016
    Co-Authors: şuayb Cagri Yener, Atilla Uygur, H. Hakan Kuntman
    Abstract:

    Memristor has been claimed as the passive fourth fundamental circuit element in 1971. About four decades later, a physical realization which presents memristor behavior has resulted in significant interest on memristor and it is continuing to increase at a growing rate. Memristor can provide new possibilities in analog circuit design thanks to its properties which cannot be mimicked by older passive circuit elements. Since no practically available memristor exist on the market yet, obtaining of a practical implementation which behaves like a memristor is important from the point of view real-world circuit design. In this paper, an ultra low-voltage ultra low-power DTMOS-based memristor design is presented. Ultra low-voltage, ultra low-power operational amplifier and ultra low-voltage, ultra low-power multiplier are also designed to use in the implementation. Memristor design is composed of these two type active blocks using CMOS 0.18 µm process technology with symmetric ±0.25 V supply voltages. Our memristor is used in a second order SallenKey band-pass filter topology. Designed memristor-based SallenKey band-pass filter is then used for real electroencephalogram data processing. The simulation results show that the design of adjustable memristor memristance/memductance provides tunable filter parameters and without any significant distortion with appropriate parameter set even at ultra-low power levels and at very-low frequencies.

  • memristor temelli Sallen Key suzgecler
    Gazi Üniversitesi Mühendislik Mimarlık Fakültesi Dergisi, 2015
    Co-Authors: şuayb Cagri Yener, Resat Mutlu, H. Hakan Kuntman
    Abstract:

    Memristor 1971 yilinda kuramsal olarak ortaya konmus ve bundan yaklasik 40 yil sonra, 2008 yilinda memristor davranisina sahip bir memristif sistem bulunmustur. Memristor gunumuzde yaygin bicimde dorduncu temel devre elemani olarak kabul edilmektedir. Memristorun analog devreler alaninda uygulamalari, uzerine artarak ilgi duyulan onemli bir calisma alanidir. Memristor temelli analog suzgecler ayarlanabilir memristans ozelligi sayesinde kazanc, deger katsayisi vb. suzgec ozelliklerinde klasik devre elemanlari ile saglanamayan otomatik ayarlanabilme ozelligi getirmektedir. Bu calismada literaturde ilk kez alcak-geciren ve yuksek-geciren olmak uzere iki farkli tip memristor temelli Sallen-Key suzgec analizi ve bunlara iliskin benzetim sonuclari sunulmaktadir. Suzgecler memristorun TiO 2 dogrusal suruklenme modeli temel alinarak tasarlanmis ve analiz edilmistir. Cok dusuk frekanslarda doyum durumunun olustugu gozlenmis, daha yuksek frekanslarda ise her iki suzgecte de basarim icin bir sinirlama ortaya cikmadigi belirlenmistir. Memristor temelli Sallen-Key suzgeclerin tasariminda kullanilmak uzere doyma ve buna karsilik bozulmanin ortaya cikmamasina yonelik tasarim kriterleri verilmistir. Verilen kriterler ve buna iliskin uygun memristor parametreleri kullanildiginda dusuk frekanslarda da suzgeclerin gerekli basarim kosullarini yerine getirdigi gosterilmistir. Analiz sonuclari ve verilen tasarim kriterleri memristor temelli Sallen-Key ve diger tip suzgeclerin tasarimlarinda kullanilabilir.

  • Memristor based Sallen-Key filters
    Journal of the Faculty of Engineering and Architecture of Gazi University, 2015
    Co-Authors: uayb Çari Yener, Reat Mutlu, H. Hakan Kuntman
    Abstract:

    In 1971, memristor is claimed as a missing circuit element and almost 40 years later than its prediction a memristive system behaving as a memristor has been found in 2008. Memristor is accepted by many as the new and the fourth fundamental circuit element. Analog applications of memristor have emerged as a new research area in recent years. An analog filter with memristor can have automatically adjustable gain, quality factor and bandwidth characteristics etc. thanks to its variable memristance. In this paper, two different types of second-order Sallen-Key filters, which are the low-pass and the high-pass Sallen Key filters, are analyzed using simulations. The linear drift model of TiO<inf>2</inf> memristor is used in all analysis and simulations. It has been found that the memristor in the filters can go into saturation at very low frequencies and both of the filters operate well at higher frequencies. A criterion is suggested to prevent memristor from going into saturation and to prevent distortion at low frequencies. Using the criteria and choosing a memristor with more appropriate parameters, the simulations are repeated for the low-pass filter and it is shown that the low-pass filter operates better with the new parameters chosen. The analysis and the criteria given in this paper can be used to design memristor-based Sallen-Key filters and adaptable to other memristor-based filters as well.

Mo Chen - One of the best experts on this subject based on the ideXlab platform.

  • Inductor-free multi-stable Chua’s circuit constructed by improved PI-type memristor emulator and active SallenKey high-pass filter
    European Physical Journal-special Topics, 2019
    Co-Authors: Luo Jiaoyan, Mo Chen, Han Bao, Bocheng Bao
    Abstract:

    Based on an improved proportion-integral-type (PI-type) memristor emulator and an active SallenKey high-pass filter (HPF), a new memristive Chua’s circuit with inductor-free implementation is presented in this paper. The memristive Chua’s circuit possesses a line equilibrium state with unstable and stable region distributions, leading to the emergence of multi-stable patterns, i.e., the coexistence of multiple attractors for different initial values. With the normalized mathematical model, local basins of attraction, bifurcation plots and phase plane plots are numerically simulated, from which the initial values-related bifurcation behaviors are demonstrated and coexisting multiple attractors are obtained in the presented memristive Chua’s circuit. Finally, circuit simulations by PSIM software are performed and the results verify the numerical plots.

  • inductor free multi stable chua s circuit constructed by improved pi type memristor emulator and active Sallen Key high pass filter
    European Physical Journal-special Topics, 2019
    Co-Authors: Jiaoyan Luo, Mo Chen, Han Bao, Bocheng Bao
    Abstract:

    Based on an improved proportion-integral-type (PI-type) memristor emulator and an active SallenKey high-pass filter (HPF), a new memristive Chua’s circuit with inductor-free implementation is presented in this paper. The memristive Chua’s circuit possesses a line equilibrium state with unstable and stable region distributions, leading to the emergence of multi-stable patterns, i.e., the coexistence of multiple attractors for different initial values. With the normalized mathematical model, local basins of attraction, bifurcation plots and phase plane plots are numerically simulated, from which the initial values-related bifurcation behaviors are demonstrated and coexisting multiple attractors are obtained in the presented memristive Chua’s circuit. Finally, circuit simulations by PSIM software are performed and the results verify the numerical plots.

  • Sallen Key low pass filter based inductor free simplified chua s circuit
    The Journal of Engineering, 2017
    Co-Authors: Han Bao, Bocheng Bao, Mo Chen
    Abstract:

    This present study reports a new type of inductor-free simplified Chua's circuit only using two-op-amps-based realisation, which is implemented by cascading a SallenKey low-pass filter with a simplified Chua's diode. With mathematical model-based numerical simulations and hardware circuit-based experimental measurements, it is demonstrated that the reported circuit exhibits the similar dynamical behaviours of the classical Chua's circuit such as point attractor, limit cycles, period doubling route, chaotic spiral attractors, double-scroll chaotic attractor, boundary crisis, coexisting bifurcation modes, and so on. Furthermore, the proposed circuit enriches the realisation forms of Chua's circuit family.

  • SallenKey low-pass filter-based inductor-free simplified Chua's circuit
    The Journal of Engineering, 2017
    Co-Authors: Han Bao, Bocheng Bao, Mo Chen
    Abstract:

    This present study reports a new type of inductor-free simplified Chua's circuit only using two-op-amps-based realisation, which is implemented by cascading a SallenKey low-pass filter with a simplified Chua's diode. With mathematical model-based numerical simulations and hardware circuit-based experimental measurements, it is demonstrated that the reported circuit exhibits the similar dynamical behaviours of the classical Chua's circuit such as point attractor, limit cycles, period doubling route, chaotic spiral attractors, double-scroll chaotic attractor, boundary crisis, coexisting bifurcation modes, and so on. Furthermore, the proposed circuit enriches the realisation forms of Chua's circuit family.

  • Chaotic bursting in memristive diode bridge-coupled Sallen-Key lowpass filter
    Electronics Letters, 2017
    Co-Authors: Bocheng Bao, Han Bao, Mo Chen
    Abstract:

    This Letter reports the finding of a point-cycle chaotic bursting phenomenon in a simple third-order memristive diode bridge-coupled Sallen-Key lowpass filter (LPF). By parallel coupling a generalised memristor composed of a diode bridge and an inductor into a Sallen-Key LPF a simple third-order memristive chaotic oscillator is established. With the modelling of this oscillator, stability analyses, numerical simulations and hardware experiments are performed, upon which the striking point-cycle chaotic bursting phenomenon is well demonstrated and effectively validated.

M De Matteis - One of the best experts on this subject based on the ideXlab platform.

  • ISCAS - A 28.8MHz 21.1dBm-IIP3 3.2mW Sallen-Key 4th-Order filter with out-of-band zeros cancellation
    2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016
    Co-Authors: M De Matteis, F Resta, Stefano D'amico, A. Pipino, A Baschirotto
    Abstract:

    A 4th-order 28.8MHz low-pass analog filter uses a modified version of Sallen-Key (SK) biquad that solves the standard SK cell critical aspect due to the out-of-band zeros (OoB). The proposed cell completely cancel the OoB zeros by means of a low-power auxiliary path and a specific design optimization.

  • a 28 8mhz 21 1dbm iip3 3 2mw Sallen Key 4th order filter with out of band zeros cancellation
    International Symposium on Circuits and Systems, 2016
    Co-Authors: M De Matteis, F Resta, S Damico, A. Pipino, A Baschirotto
    Abstract:

    A 4th-order 28.8MHz low-pass analog filter uses a modified version of Sallen-Key (SK) biquad that solves the standard SK cell critical aspect due to the out-of-band zeros (OoB). The proposed cell completely cancel the OoB zeros by means of a low-power auxiliary path and a specific design optimization.

  • NEWCAS - A 30MHz 28dBm-IIP3 3.2mW fully-differential Sallen-Key 4 th -order filter with out-of-band zeros cancellation
    2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS), 2015
    Co-Authors: F Resta, M De Matteis, Stefano D'amico, A. Pezzotta, A Baschirotto
    Abstract:

    In this paper a 4th-order 30MHz Butterworth low-pass analog filter is presented, exploiting the Sallen-Key (SK) biquadratic cell circuit. The out-of-band zeros typically present in SK cells, are cancelled by using a low-power auxiliary path, resulting in a significant improvement of the stopband rejection, at the cost of a small power budget for the same auxiliary path biasing. An efficient unity gain buffer has been used, based on super-source-follower stage, providing very large in-band IIP3 over the entire filter bandwidth (21.5dBm for 25MHz&26MHz input tones), at 3.2mW power consumption from a single 1.8V supply voltage. The filter prototype has been designed in CMOS 0.18μm tech. The total area occupancy is 0.12mm2, the in-band integrated noise is 197μVRMS.

  • a 30mhz 28dbm iip3 3 2mw fully differential Sallen Key 4 th order filter with out of band zeros cancellation
    International New Circuits and Systems Conference, 2015
    Co-Authors: F Resta, S Damico, M De Matteis, A. Pezzotta, A Baschirotto
    Abstract:

    In this paper a 4th-order 30MHz Butterworth low-pass analog filter is presented, exploiting the Sallen-Key (SK) biquadratic cell circuit. The out-of-band zeros typically present in SK cells, are cancelled by using a low-power auxiliary path, resulting in a significant improvement of the stopband rejection, at the cost of a small power budget for the same auxiliary path biasing. An efficient unity gain buffer has been used, based on super-source-follower stage, providing very large in-band IIP3 over the entire filter bandwidth (21.5dBm for 25MHz&26MHz input tones), at 3.2mW power consumption from a single 1.8V supply voltage. The filter prototype has been designed in CMOS 0.18μm tech. The total area occupancy is 0.12mm2, the in-band integrated noise is 197μVRMS.

  • an improved source follower based Sallen Key continuous time biquadratic cell with auxiliary path
    NORCHIP, 2014
    Co-Authors: F Resta, S Damico, M De Matteis, A Baschirotto
    Abstract:

    An improved Source Follower based low-pass Sallen-Key continuous time biquadratic cell is presented. An innovative structure with auxiliary path is proposed in order to increase the out-of-band attenuation of Sallen-Key filter. The auxiliary path eliminates one out-of-band parasitic zero in the transfer function. A prototype of Sallen-Key second order filter with a bandwidth of 120MHz and a quality factor of 1.19 has been designed in a standard 0.35μιη technology occupying 390μιη X 222μm area. A 75dB HD3 for a IV input signal and 50dB out-of-band attenuation at 3.2GHz are the filter peculiarity. The cutoff frequency deviation due to technological spread, aging and temperature variation is adjusted by using 4-bits capacitors arrays.