The Experts below are selected from a list of 270 Experts worldwide ranked by ideXlab platform
José Millan - One of the best experts on this subject based on the ideXlab platform.
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A survey of wide bandgap power Semiconductor Devices
IEEE Transactions on Power Electronics, 2014Co-Authors: José Millan, Philippe Godignon, Xavier Perpina, Amador Perez-tomas, Jose RebolloAbstract:Wide bandgap Semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power Devices is being developed for power converter applications in which traditional Si power Devices show limited operation. The use of these new power Semiconductor Devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising Semiconductor materials for these new power Devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC-and GaN-based power Semiconductor Devices together with an overall view of the state of the art of this new device generation. © 2013 IEEE.
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A review of WBG power Semiconductor Devices
Proceedings of the International Semiconductor Conference CAS, 2012Co-Authors: José MillanAbstract:It is worldwide accepted that a real breakthrough in the Power Electronics field mainly comes from the development and use of Wide Band Gap (WBG) Semiconductor Devices. WBG Semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high switching speed, high voltage and high temperature. These unique performances provide a qualitative change in their applications for energy processing. From energy generation to the end-user, the electric energy undergoes a number of conversions, which are currently highly inefficient to the point that it is estimated that only 20{%} of the whole energy involved in energy generation reaches the end-user. WGB Semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high voltage WBG power Semiconductor Devices, especially SiC and GaN, is reviewed. Future trends in device development and industrialization are also addressed. © 2012 IEEE.
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Wide Band Gap Semiconductor Devices for Power Electronics
Automatika ‒ Journal for Control Measurement Electronics Computing and Communications, 2012Co-Authors: José Millan, Philippe Godignon, Amador Perez-tomasAbstract:It is worldwide accepted today that a real breakthrough in the Power Electronics field may mainly come from the development and use of Wide Band Gap (WBG) Semiconductor Devices. WBG Semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature. These unique performances provide a qualitative change in their application to energy processing. From energy generation (carbon, oil, gas or any renewable) to the end-user (domestic, transport, industry, etc), the electric energy undergoes a number of conversions. These conversions are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end-user. WGB Semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high-voltage WBG power Semiconductor Devices, especially SiC and GaN, is reviewed. The performances of various rectifiers and switches, already demonstrated are also discussed. Material and process technologies of these WBG Semiconductor Devices are also tackled. Future trends in device development and industrialization are also addressed.
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Wide band-gap power Semiconductor Devices
IET Circuits Devices & Systems, 2007Co-Authors: José MillanAbstract:The recent progress in the development of high-voltage SiC, GaN and diamond power Devices is reviewed. Topics covered include the performance of various rectifiers and switches, material and process technologies of these wide band-gap Semiconductor Devices and future trends in device development and industrialisation.
Amador Perez-tomas - One of the best experts on this subject based on the ideXlab platform.
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A survey of wide bandgap power Semiconductor Devices
IEEE Transactions on Power Electronics, 2014Co-Authors: José Millan, Philippe Godignon, Xavier Perpina, Amador Perez-tomas, Jose RebolloAbstract:Wide bandgap Semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power Devices is being developed for power converter applications in which traditional Si power Devices show limited operation. The use of these new power Semiconductor Devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising Semiconductor materials for these new power Devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC-and GaN-based power Semiconductor Devices together with an overall view of the state of the art of this new device generation. © 2013 IEEE.
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Wide Band Gap Semiconductor Devices for Power Electronics
Automatika ‒ Journal for Control Measurement Electronics Computing and Communications, 2012Co-Authors: José Millan, Philippe Godignon, Amador Perez-tomasAbstract:It is worldwide accepted today that a real breakthrough in the Power Electronics field may mainly come from the development and use of Wide Band Gap (WBG) Semiconductor Devices. WBG Semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature. These unique performances provide a qualitative change in their application to energy processing. From energy generation (carbon, oil, gas or any renewable) to the end-user (domestic, transport, industry, etc), the electric energy undergoes a number of conversions. These conversions are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end-user. WGB Semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high-voltage WBG power Semiconductor Devices, especially SiC and GaN, is reviewed. The performances of various rectifiers and switches, already demonstrated are also discussed. Material and process technologies of these WBG Semiconductor Devices are also tackled. Future trends in device development and industrialization are also addressed.
Abdul R. Beig - One of the best experts on this subject based on the ideXlab platform.
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Power Semiconductor Devices
Electric Renewable Energy Systems, 2015Co-Authors: Abdul R. BeigAbstract:Power electronic circuits are essential parts in any renewable energy system. Power Semiconductor Devices are used as switches in these power electronic circuits. This chapter discusses the basic structure, properties, characteristics, ratings, and turn-on and turn-off characteristics of different types of power Semiconductor switches. Recently, wide band gap Devices such as silicon carbide-and gallium nitride-based power Devices have shown a promising future for power-electronic applications, as they have a higher voltage rating, high temperature stability, and low switching and conduction losses. The basic features, characteristics, and applications of power Devices based on these materials have also been presented.
Philippe Godignon - One of the best experts on this subject based on the ideXlab platform.
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A survey of wide bandgap power Semiconductor Devices
IEEE Transactions on Power Electronics, 2014Co-Authors: José Millan, Philippe Godignon, Xavier Perpina, Amador Perez-tomas, Jose RebolloAbstract:Wide bandgap Semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power Devices is being developed for power converter applications in which traditional Si power Devices show limited operation. The use of these new power Semiconductor Devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising Semiconductor materials for these new power Devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC-and GaN-based power Semiconductor Devices together with an overall view of the state of the art of this new device generation. © 2013 IEEE.
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Wide Band Gap Semiconductor Devices for Power Electronics
Automatika ‒ Journal for Control Measurement Electronics Computing and Communications, 2012Co-Authors: José Millan, Philippe Godignon, Amador Perez-tomasAbstract:It is worldwide accepted today that a real breakthrough in the Power Electronics field may mainly come from the development and use of Wide Band Gap (WBG) Semiconductor Devices. WBG Semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature. These unique performances provide a qualitative change in their application to energy processing. From energy generation (carbon, oil, gas or any renewable) to the end-user (domestic, transport, industry, etc), the electric energy undergoes a number of conversions. These conversions are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end-user. WGB Semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high-voltage WBG power Semiconductor Devices, especially SiC and GaN, is reviewed. The performances of various rectifiers and switches, already demonstrated are also discussed. Material and process technologies of these WBG Semiconductor Devices are also tackled. Future trends in device development and industrialization are also addressed.
Sammy Kayali - One of the best experts on this subject based on the ideXlab platform.
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Compound Semiconductor Devices for Space Applications
2000Co-Authors: Sammy KayaliAbstract:Abstract : Application of Semiconductor Devices in high reliability space systems requires a thorough understanding of the reliability and failure mechanisms associated with the selected Devices. This paper provides a description of the reliability and qualification issues related to the application of compound Semiconductor Devices in critical space systems. A discussion of common failure mechanisms, radiation effects and other reliability concerns is provided along with a discussion of methods for technology qualification for high reliability space applications.
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Reliability of Compound Semiconductor Devices for Space Applications
Microelectronics Reliability, 1999Co-Authors: Sammy KayaliAbstract:Abstract Application of Semiconductor Devices in high reliability space systems requires a thorough understanding of the reliability and failure mechanisms associated with the selected Devices. This paper provides a description of the reliability and qualification issues related to the application of compound Semiconductor Devices in critical space systems. A discussion of common failure mechanisms, radiation effects and other reliability concerns is provided along with a discussion of methods for technology qualification for high reliability space applications.
