The Experts below are selected from a list of 45 Experts worldwide ranked by ideXlab platform
Ayelet Vilan - One of the best experts on this subject based on the ideXlab platform.
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hg molecular monolayer si junctions electrical interplay between monolayer properties and Semiconductor Doping density
Journal of Physical Chemistry C, 2010Co-Authors: Omer Yaffe, Luc Scheres, Lior Segev, Ariel Biller, Eric Salomon, Marcel Giesbers, Leeor Kronik, Antoine Kahn, Han Zuilhof, Ayelet VilanAbstract:Metal−organic molecule−Semiconductor junctions are controlled not only by the molecular properties, as in metal−organic molecule−metal junctions, but also by effects of the molecular dipole, the dipolar molecule−Semiconductor link, and molecule−Semiconductor charge transfer, and by the effects of all these on the Semiconductor depletion layer (i.e., on the internal Semiconductor barrier to charge transport). Here, we report on and compare the electrical properties (current−voltage, capacitance−voltage, and work function) of large area Hg/organic monolayer-Si junctions with alkyl and alkenyl monolayers on moderately and highly doped n-Si, and combine the experimental data with simulations of charge transport and electronic structure calculations. We show that, for moderately doped Si, the internal Semiconductor barrier completely controls transport and the attached molecules influence the transport of such junctions only in that they drive the Si into inversion. The resulting minority carrier-controlled ju...
Liu Qing-ju - One of the best experts on this subject based on the ideXlab platform.
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Carbon nanotubes gas sensors and oxide Semiconductor Doping with carbon nanotubes gas sensors
Journal of Functional Biomaterials, 2011Co-Authors: Liu Qing-juAbstract:Carbon nanotubes gas sensors are attracted more attentions for its exceptional properties of lower work temperature and detection limit.While the oxide Semiconductor Doping with carbon nanotubes gas sensors have the advantages both of carbon nanotubes gas sensors and oxide Semiconductor gas sensors,such as higher sensitive,lower work temperature and detection limit.The progress and gas-sensing mechanism of this two kinds of gas sensors are introduced and summarized in this paper,and also the problems and developing tendency are pointed out.
Eiichi Nakamura - One of the best experts on this subject based on the ideXlab platform.
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organic inorganic hybrid p type Semiconductor Doping affords hole transporting layer free thin film perovskite solar cells with high stability
ACS Applied Materials & Interfaces, 2019Co-Authors: Zhongmin Zhou, Ziyue Qiang, Takumi Sakamaki, Izuru Takei, Rui Shang, Eiichi NakamuraAbstract:A feature of perovskite devices is their suitability in the fabrication of semitransparent solar cells (ST-SCs). Methylammonium lead iodide based perovskite material (MAPbI3 or PV) is a possible material of choice because of its semitransparent nature in thin film form and after considering a balance among average visible light transmittance (AVT), power conversion efficiency (PCE), and device stability. However, there are issues to be addressed in the design of PV ST-SCs, such as the stability of small grain crystals forming in thin films and reducing the number of layers in the device to increase AVT. We report herein that Doping PV with a 0.03 wt % hybrid organic p-type Semiconductor, fluorinated tetraarylbenzo [1,2-b:4,5-b′]dipyrrol-1,5-yl alkanediylsulfonate salt (BDPSO), affords a device with a 280 nm active layer directly fabricated on an indium tin oxide/glass substrate, without fabricating a hole transporting layer. Such a device exhibited a 30% higher PCE of 16.9% than the device made without do...
Omer Yaffe - One of the best experts on this subject based on the ideXlab platform.
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hg molecular monolayer si junctions electrical interplay between monolayer properties and Semiconductor Doping density
Journal of Physical Chemistry C, 2010Co-Authors: Omer Yaffe, Luc Scheres, Lior Segev, Ariel Biller, Eric Salomon, Marcel Giesbers, Leeor Kronik, Antoine Kahn, Han Zuilhof, Ayelet VilanAbstract:Metal−organic molecule−Semiconductor junctions are controlled not only by the molecular properties, as in metal−organic molecule−metal junctions, but also by effects of the molecular dipole, the dipolar molecule−Semiconductor link, and molecule−Semiconductor charge transfer, and by the effects of all these on the Semiconductor depletion layer (i.e., on the internal Semiconductor barrier to charge transport). Here, we report on and compare the electrical properties (current−voltage, capacitance−voltage, and work function) of large area Hg/organic monolayer-Si junctions with alkyl and alkenyl monolayers on moderately and highly doped n-Si, and combine the experimental data with simulations of charge transport and electronic structure calculations. We show that, for moderately doped Si, the internal Semiconductor barrier completely controls transport and the attached molecules influence the transport of such junctions only in that they drive the Si into inversion. The resulting minority carrier-controlled ju...
L. F. Santos - One of the best experts on this subject based on the ideXlab platform.
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Electrical properties of electrochemically doped organic Semiconductors using light-emitting electrochemical cells
Journal of Solid State Electrochemistry, 2016Co-Authors: G. Gozzi, L. D. Cagnani, R. M. Faria, L. F. SantosAbstract:We present a study of the electrical properties of electrochemically doped conjugated polymers using polymeric light-emitting electrochemical cells (PLECs) and interpreting the results according to a phenomenological model (PM) which assumes that, above the device turn-on voltage, the bulk transport properties of the doped organic Semiconductor are responsible for the main contribution to the whole device conductivity. To confirm the predictions of this model, the dependence of the conductivity of PLECs with different parameters is evaluated and compared with the behavior expected for a doped semiconducting polymeric material. The organic Semiconductor Doping level, the blend concentration of organic semiconducting molecules, the device thickness, the charge carrier mobility, and the temperature are the parameters varied to perform this analysis. We observed that the device conductivity is independent of the active layer thickness, weakly dependent on the temperature, but strongly dependent on the Semiconductor Doping level, on the Semiconductor fraction in the blend, and on the intrinsic charge carrier mobility. These results were well described by the variable range hopping (VRH) model, which has been widely employed to describe the charge transport in doped semiconducting polymeric materials, confirming the prediction of the phenomenological model. The current analysis demonstrates that PLECs are a suitable system for studying, in situ, the electrochemical Doping of semiconducting polymers, permitting the evaluation of material properties as, for instance, the density of electronic charge carriers (and, consequently, the ionic charge carrier concentration) necessary to achieve the maximum electrochemical Doping level of the organic Semiconductor.
