The Experts below are selected from a list of 16167 Experts worldwide ranked by ideXlab platform
V. A. Abdulkadyrov - One of the best experts on this subject based on the ideXlab platform.
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Interaction of electromagnetic wave with a composite Semiconductor Structure
2011 XVIth International Seminar Workshop on Direct and Inverse Problems of Electromagnetic and Acoustic Wave Theory (DIPED), 2011Co-Authors: V. A. AbdulkadyrovAbstract:The interaction of electromagnetic wave with a composite Semiconductor Structure formed by dielectric layers, diffraction grating film GaAs (CS) is investigated. The reflection and transmission coefficients have been obtained for the Structure.
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Excitation theory of microwave oscillations in distributed Semiconductor Structure on Smith-Purcell effect
The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves Millimeter and Submillimeter Waves (IEEE Cat. No.04EX828), 2004Co-Authors: V. A. Abdulkadyrov, E.m. Khutoryan, A.i. TsvykAbstract:In the present work in-self-consistent setting of the potentiality of electromagnetic oscillation excitation in a distributed Semiconductor Structure on Smith-Purcell (diffraction radiation) effect is considered. Thus the electrodynamic analysis of interaction of charge carriers in Semiconductor drifting flow with field of periodic wave leading Structure on Smith-Purcell effect is studied. The electrodynamic model of distributed Semiconductor Structure is the wave guide that consists of infinite conducted shields, one of which is diffraction grating.
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Microwave amplifier theory for a waveguide with a distributed Semiconductor Structure based on the Smith-Purcell effect
12th International Conference Microwave and Telecommunication Technology, 2002Co-Authors: V. A. Abdulkadyrov, E.m. Khutoryan, A.i. TsvykAbstract:In the context of the small signal theory a microwave amplification in a distributed Semiconductor Structure based on the Smith-Purcell effect has been investigated. The plasma in a Semiconductor was considered in quasi-hydrodynamic approximation. A characteristic equation has been obtained and its numerical solution has been arrived at.
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Active wave interaction in a distributed Semiconductor Structure
Fourth International Kharkov Symposium 'Physics and Engineering of Millimeter and Sub-Millimeter Waves'. Symposium Proceedings (Cat. No.01EX429), 2001Co-Authors: V. A. AbdulkadyrovAbstract:The advances in developing modern microwave devices are associated with the design of functional systems implementing a variety of wave phenomena (both at the surface and in the bulk) occurring in Semiconductor Structures, especially taking into account progress in modern precision technologies. A large number of papers deal with the problems of manufacturing active devices based on the long-range (prolonged) interaction of drifting charge carriers in. Semiconductors with fields generated by Structures. We consider the electron-wave interactions in the distributed Semiconductor Structure. The key element of the electrodynamic model of the system under study is a Semiconductor film. The Semiconductor is subjected to applied longitudinal electric and magnetic fields. The system is in the nonequilibrium state; therefore, the disturbances of the space charge arising in the Semiconductor propagate in the form of electrokinetic waves, which, in turn, are transformed into electromagnetic radiation.
Chien Chou - One of the best experts on this subject based on the ideXlab platform.
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immobilization of enzyme and antibody on ald hfo2 eis Structure by nh3 plasma treatment
Nanoscale Research Letters, 2012Co-Authors: Ishun Wang, Chihsien Huang, Tsengfu Lu, Polung Yang, Dorota G Pijanswska, Chiaming Yang, Jerchyi Wang, Jausong Yu, Yusun Chang, Chien ChouAbstract:Thin hafnium oxide layers deposited by an atomic layer deposition system were investigated as the sensing membrane of the electrolyte-insulator-Semiconductor Structure. Moreover, a post-remote NH3 plasma treatment was proposed to replace the complicated silanization procedure for enzyme immobilization. Compared to conventional methods using chemical procedures, remote NH3 plasma treatment reduces the processing steps and time. The results exhibited that urea and antigen can be successfully detected, which indicated that the immobilization process is correct.
Hyun-yong Yu - One of the best experts on this subject based on the ideXlab platform.
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Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF6 Plasma Treatment
IEEE Electron Device Letters, 2016Co-Authors: Changhwan Choi, Jin-hong Park, Rino Choi, Hyun-yong YuAbstract:We demonstrate the effect of SF6 plasma passivation with a ZnO interlayer in a metal-interlayer-Semiconductor (MIS) Structure to reduce source/drain (S/D) contact resistance. The interface trap states and the metal-induced gap states causing the Fermi-level pinning problem are effectively alleviated by passivating the GaAs surface with SF6 plasma treatment and inserting a thin ZnO interlayer, respectively. Specific contact resistivity exhibits ~104 × reduction when the GaAs surface is treated with SF6 plasma, followed by ZnO interlayer deposition, compared with the Ti/n-GaAs (~2 × 1018 cm-3) S/D contact. This result proposes the promising non-alloyed S/D ohmic contact for III-V Semiconductor-based transistors.
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Fermi-Level Unpinning Using a Ge-Passivated Metal–Interlayer–Semiconductor Structure for Non-Alloyed Ohmic Contact of High-Electron-Mobility Transistors
IEEE Electron Device Letters, 2015Co-Authors: Jin-hong Park, Changhwan Shin, Changhwan Choi, Hyun-yong YuAbstract:We demonstrate the use of germanium passivation in conjunction with a ZnO interlayer in a metal-interlayer- Semiconductor Structure in a source/drain (S/D) contact. The Fermi-level pinning problem resulting in the large contact resistances in S/D contacts is effectively alleviated by inserting a thin Ge passivation layer and a ZnO interlayer, passivating the GaAs surface and reducing the metal-induced gap states on the GaAs surface, respectively. The specific contact resistivity for the Ti/ZnO/Ge/n-GaAs (~2 × 1018 cm-3) Structure exhibits a ~1660× reduction compared with that of a Ti/n-GaAs Structure. These results suggest that the proposed Structure shows promise as a nonalloyed ohmic contact in high-electron-mobility transistors.
A.a. Bulgakov - One of the best experts on this subject based on the ideXlab platform.
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Slow surface magnetoplasmon in periodic Semiconductor Structure
2013 International Kharkov Symposium on Physics and Engineering of Microwaves Millimeter and Submillimeter Waves, 2013Co-Authors: A.a. Bulgakov, V.k. KononenkoAbstract:Slow electromagnetic waves find numerous applications in a wide frequency range of the electromagnetic spectrum, from RF to the optical range. Now, surface plasmon polaritons studies are under way in thin Semiconductor layers for active plasmonic circuits at THz frequencies [1]. Our work shows that the surface waves in periodic magnetoactive dielectric-Semiconductor Structure may have slowdown rate about 103. A study of some other properties of this wave at submillimeter wavelengths was also made.
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The bulk and surface helicons in the regularly inhomogeneous Semiconductor Structure
MIKON 2008 - 17th International Conference on Microwaves Radar and Wireless Communications, 2008Co-Authors: Y.a. Olkhovskiy, A.a. Bulgakov, O.v. ShramkovaAbstract:In this paper the surface waves propagated along the contact of two periodic Semiconductor lattices placed in the external magnetic field is considered. Magnetic field vector is situated in the same plane where electromagnetic waves propagate. Parameterspsila region is investigated where the helicon waves propagate. The distinctive feature of the helicon wave spectrum is that the numerous narrow allowed zones arise. It is shown that near the edge of the bulk helicon transmission band the surface helicon wave exist.
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Investigation of reflection and transmission coefficients on active multilayered Semiconductor Structure
2006 Asia-Pacific Microwave Conference, 2006Co-Authors: A.a. Bulgakov, O.v. ShramkovaAbstract:The effect of carrier drift on the reflection and transmission coefficients on multilayered periodic Semiconductor Structure placed into external electrical field is considered in the work. We investigate a finite periodic Structure composed of alternating layers of electron and hole Semiconductors. It is assumed that the thickness of layers less than length of electromagnetic wave. It is investigated the dependencies of reflection and transmission coefficients on a frequency and drift velocity of carriers. It is shown that drift of carriers in layers leads to the appearance of instability.
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Influence of Dissipation Processes on the Dispersion and Instability of the Drift Waves in Semiconductor Superlattice
2006 International Conference on Microwaves Radar & Wireless Communications, 2006Co-Authors: O.v. Shramkova, A.a. BulgakovAbstract:The effect of carrier collisions on dispersion dependences and instabilities of drift waves in multilayered periodic Semiconductor Structure placed into external electrical field is considered in the work. It is supposed that the drift of different sign carriers under the influence of electrical field takes place. It is shown that the properties of drift waves depend on the direction of propagation and thicknesses of layers. It was received the conditions of wave instability.
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Slow electromagnetic waves in layered periodic Semiconductor Structures
Journal of Communications Technology and Electronics, 1995Co-Authors: A.a. BulgakovAbstract:The dispersion properties of surface electromagnetic waves, propagating along the boundary between a layered periodic Semiconductor Structure and free space, are investigated.
Chiaming Yang - One of the best experts on this subject based on the ideXlab platform.
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immobilization of enzyme and antibody on ald hfo2 eis Structure by nh3 plasma treatment
Nanoscale Research Letters, 2012Co-Authors: Ishun Wang, Chihsien Huang, Tsengfu Lu, Polung Yang, Dorota G Pijanswska, Chiaming Yang, Jerchyi Wang, Jausong Yu, Yusun Chang, Chien ChouAbstract:Thin hafnium oxide layers deposited by an atomic layer deposition system were investigated as the sensing membrane of the electrolyte-insulator-Semiconductor Structure. Moreover, a post-remote NH3 plasma treatment was proposed to replace the complicated silanization procedure for enzyme immobilization. Compared to conventional methods using chemical procedures, remote NH3 plasma treatment reduces the processing steps and time. The results exhibited that urea and antigen can be successfully detected, which indicated that the immobilization process is correct.
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Sensitivity improvements of HfxWyOz sensing membranes for pK sensors based on electrolyte-insulator-Semiconductor Structure
SENSORS 2009 IEEE, 2009Co-Authors: Wen-yu Chung, Tsengfu Lu, Chiaming YangAbstract:In this study, the hydrogen ion and potassium ion sensing properties of mixing hafnium oxide-tungsten oxide (HfxWyOz) membranes on an electrolyte-insulator-Semiconductor (EIS) Structure by co-sputtering method were investigated. For tungsten oxide, the increasing of pH-sensitivity (35.47 mV/pH to 46.22 mV/pH), linearity (98.11% to 99.87%), measuring range (pH 6-pH 12 to pH 2-pH 12) and the decreasing of hysteresis (17.63 mV to 2.34 mV) were observed with increasing the ratio of hafnium oxide incorporation. For hafnium oxide, an increasing of pK-sensitivity (7.07 mV mV/ pK to 26.84 mV/ pK in the concentration range between 1 mM to 100 mM) was observed with increasing the ratio of tungsten oxide incorporation. For potassium ion detection, the HfxWyOz (HfO2-60%) sensing membrane with good pK sensitivity (26.84 mV/pK) and high linearity (99.67%) in the concentration range between 1 mM and 100 mM and with good selectivity (low pH-sensitivity) over hydrogen ion was chosen as the optimal condition for pK sensor application.
