The Experts below are selected from a list of 232581 Experts worldwide ranked by ideXlab platform
Kun Ren - One of the best experts on this subject based on the ideXlab platform.
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uniform ti doped sb2te3 materials for high speed phase change memory applications
Applied Physics Letters, 2014Co-Authors: Kun RenAbstract:Compared with pure Sb2Te3, Ti0.32Sb2Te3 (TST) phase change material has larger resistance ratio, higher crystallization temperature and better thermal stability. The sharp decrease in mobility is responsible for the increasing amorphous and crystalline sheet resistance. The uniform crystalline structure of TST film is very benefit for the endurance characteristic. The Set and ReSet Operation voltages for TST-based phase change memory device are much lower than those of conventional Ge2Sb2Te5-based one. Remarkably, the device presents extremely rapid Set Operation speed (∼6 ns). Furthermore, up to 1 × 106 programming cycles are obtained with stable Set and ReSet resistances.
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w sb te phase change material a candidate for the trade off between programming speed and data retention
Applied Physics Letters, 2012Co-Authors: Cheng Peng, Kun Ren, Bo Liu, Zhitang Song, Feng Rao, Min Zhu, Pingxiong Yang, Hongjia Song, Xilin Zhou, Junhao ChuAbstract:W-Sb-Te phase-change material has been proposed to improve the performance of phase-change memory (PCM). Crystallization temperature, crystalline resistance, and 10-year data retention of Sb2Te increase markedly by W doping. The Wx(Sb2Te)1−x films crystallize quickly into a stable hexagonal phase with W uniformly distributing in the crystal lattice, which ensures faster Set speed and better Operation stability for the application in practical device. PCM device based on W0.07(Sb2Te)0.93 shows ultrafast Set Operation (6 ns) and good endurance (1.8 × 105 cycles). W-Sb-Te material is a promising candidate for the trade-off between programming speed and data retention.
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ti10sb60te30 for phase change memory with high temperature data retention and rapid crystallization speed
Applied Physics Letters, 2012Co-Authors: Min Zhu, Kun Ren, Sannian Song, Zhitang Song, Daolin Cai, Feng Rao, Bo LiuAbstract:With a high crystallization temperature of 211 °C, Ti10Sb60Te30 phase change material exhibits a data retention of 10-yr at 137 °C, which is much better than that of usual Ge2Sb2Te5. No other phase is formed in Ti10Sb60Te30 film except hexagonal Sb2Te phase. For Ti10Sb60Te30-based phase change memory cell, as short as 6 ns electric pulse can fulfill the Set Operation, demonstrating an extremely rapid crystallization speed of Ti10Sb60Te30. The programming cycles can reach 2.2 × 104 with very short Set/ReSet pulses of 100 ns/50 ns.
Min Zhu - One of the best experts on this subject based on the ideXlab platform.
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one order of magnitude faster phase change at reduced power in ti sb te
Nature Communications, 2014Co-Authors: Min Zhu, Feng Rao, Mengjiao Xia, Songlin Feng, Hongbo Sun, S B ZhangAbstract:To date, slow Set Operation speed and high ReSet Operation power remain to be important limitations for substituting dynamic random access memory by phase change memory. Here, we demonstrate phase change memory cell based on Ti0.4Sb2Te3 alloy, showing one order of magnitude faster Set Operation speed and as low as one-fifth ReSet Operation power, compared with Ge2Sb2Te5-based phase change memory cell at the same size. The enhancements may be rooted in the common presence of titanium-centred octahedral motifs in both amorphous and crystalline Ti0.4Sb2Te3 phases. The essentially unchanged local structures around the titanium atoms may be responsible for the significantly improved performance, as these structures could act as nucleation centres to facilitate a swift, low-energy order-disorder transition for the rest of the Sb-centred octahedrons. Our study may provide an alternative to the development of high-speed, low-power dynamic random access memory-like phase change memory technology.
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w sb te phase change material a candidate for the trade off between programming speed and data retention
Applied Physics Letters, 2012Co-Authors: Cheng Peng, Kun Ren, Bo Liu, Zhitang Song, Feng Rao, Min Zhu, Pingxiong Yang, Hongjia Song, Xilin Zhou, Junhao ChuAbstract:W-Sb-Te phase-change material has been proposed to improve the performance of phase-change memory (PCM). Crystallization temperature, crystalline resistance, and 10-year data retention of Sb2Te increase markedly by W doping. The Wx(Sb2Te)1−x films crystallize quickly into a stable hexagonal phase with W uniformly distributing in the crystal lattice, which ensures faster Set speed and better Operation stability for the application in practical device. PCM device based on W0.07(Sb2Te)0.93 shows ultrafast Set Operation (6 ns) and good endurance (1.8 × 105 cycles). W-Sb-Te material is a promising candidate for the trade-off between programming speed and data retention.
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ti10sb60te30 for phase change memory with high temperature data retention and rapid crystallization speed
Applied Physics Letters, 2012Co-Authors: Min Zhu, Kun Ren, Sannian Song, Zhitang Song, Daolin Cai, Feng Rao, Bo LiuAbstract:With a high crystallization temperature of 211 °C, Ti10Sb60Te30 phase change material exhibits a data retention of 10-yr at 137 °C, which is much better than that of usual Ge2Sb2Te5. No other phase is formed in Ti10Sb60Te30 film except hexagonal Sb2Te phase. For Ti10Sb60Te30-based phase change memory cell, as short as 6 ns electric pulse can fulfill the Set Operation, demonstrating an extremely rapid crystallization speed of Ti10Sb60Te30. The programming cycles can reach 2.2 × 104 with very short Set/ReSet pulses of 100 ns/50 ns.
Feng Rao - One of the best experts on this subject based on the ideXlab platform.
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one order of magnitude faster phase change at reduced power in ti sb te
Nature Communications, 2014Co-Authors: Min Zhu, Feng Rao, Mengjiao Xia, Songlin Feng, Hongbo Sun, S B ZhangAbstract:To date, slow Set Operation speed and high ReSet Operation power remain to be important limitations for substituting dynamic random access memory by phase change memory. Here, we demonstrate phase change memory cell based on Ti0.4Sb2Te3 alloy, showing one order of magnitude faster Set Operation speed and as low as one-fifth ReSet Operation power, compared with Ge2Sb2Te5-based phase change memory cell at the same size. The enhancements may be rooted in the common presence of titanium-centred octahedral motifs in both amorphous and crystalline Ti0.4Sb2Te3 phases. The essentially unchanged local structures around the titanium atoms may be responsible for the significantly improved performance, as these structures could act as nucleation centres to facilitate a swift, low-energy order-disorder transition for the rest of the Sb-centred octahedrons. Our study may provide an alternative to the development of high-speed, low-power dynamic random access memory-like phase change memory technology.
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w sb te phase change material a candidate for the trade off between programming speed and data retention
Applied Physics Letters, 2012Co-Authors: Cheng Peng, Kun Ren, Bo Liu, Zhitang Song, Feng Rao, Min Zhu, Pingxiong Yang, Hongjia Song, Xilin Zhou, Junhao ChuAbstract:W-Sb-Te phase-change material has been proposed to improve the performance of phase-change memory (PCM). Crystallization temperature, crystalline resistance, and 10-year data retention of Sb2Te increase markedly by W doping. The Wx(Sb2Te)1−x films crystallize quickly into a stable hexagonal phase with W uniformly distributing in the crystal lattice, which ensures faster Set speed and better Operation stability for the application in practical device. PCM device based on W0.07(Sb2Te)0.93 shows ultrafast Set Operation (6 ns) and good endurance (1.8 × 105 cycles). W-Sb-Te material is a promising candidate for the trade-off between programming speed and data retention.
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ti10sb60te30 for phase change memory with high temperature data retention and rapid crystallization speed
Applied Physics Letters, 2012Co-Authors: Min Zhu, Kun Ren, Sannian Song, Zhitang Song, Daolin Cai, Feng Rao, Bo LiuAbstract:With a high crystallization temperature of 211 °C, Ti10Sb60Te30 phase change material exhibits a data retention of 10-yr at 137 °C, which is much better than that of usual Ge2Sb2Te5. No other phase is formed in Ti10Sb60Te30 film except hexagonal Sb2Te phase. For Ti10Sb60Te30-based phase change memory cell, as short as 6 ns electric pulse can fulfill the Set Operation, demonstrating an extremely rapid crystallization speed of Ti10Sb60Te30. The programming cycles can reach 2.2 × 104 with very short Set/ReSet pulses of 100 ns/50 ns.
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investigation of sb rich si2sb2 xte6 material for phase change random access memory application
Applied Physics A, 2011Co-Authors: Xilin Zhou, Bo Liu, Zhitang Song, Feng Rao, Songlin Feng, Dongning Yao, Weijun Yin, Bomy ChenAbstract:Sb-rich Si2Sb2+xTe6 (x=0, 1.4, 10) thin films are proposed to present the feasibility for electronic phase change memory application. The crystallization behavior is improved by adding Sb into the material. The crystallization temperature is about 506, 502, and 450 K for Si2Sb2Te6, Si2Sb3.4Te6, and Si2Sb12Te6 films, respectively, and the corresponding activation energy is in the range from 2.70 to 1.69 eV, which is expected for a low-power and high-speed Set Operation. In addition, maximum temperature for a 10 year data lifetime is estimated to be 133, 127, and 98°C, respectively. The memory devices are successfully fabricated employing these films, promising that the stability of the low-resistance crystalline state is improved by adding Sb into the stoichiometric Si2Sb2Te6 material, and the reversibility of the device is also realized for the Si2Sb12Te6-based cell.
S B Zhang - One of the best experts on this subject based on the ideXlab platform.
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one order of magnitude faster phase change at reduced power in ti sb te
Nature Communications, 2014Co-Authors: Min Zhu, Feng Rao, Mengjiao Xia, Songlin Feng, Hongbo Sun, S B ZhangAbstract:To date, slow Set Operation speed and high ReSet Operation power remain to be important limitations for substituting dynamic random access memory by phase change memory. Here, we demonstrate phase change memory cell based on Ti0.4Sb2Te3 alloy, showing one order of magnitude faster Set Operation speed and as low as one-fifth ReSet Operation power, compared with Ge2Sb2Te5-based phase change memory cell at the same size. The enhancements may be rooted in the common presence of titanium-centred octahedral motifs in both amorphous and crystalline Ti0.4Sb2Te3 phases. The essentially unchanged local structures around the titanium atoms may be responsible for the significantly improved performance, as these structures could act as nucleation centres to facilitate a swift, low-energy order-disorder transition for the rest of the Sb-centred octahedrons. Our study may provide an alternative to the development of high-speed, low-power dynamic random access memory-like phase change memory technology.
Bo Liu - One of the best experts on this subject based on the ideXlab platform.
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w sb te phase change material a candidate for the trade off between programming speed and data retention
Applied Physics Letters, 2012Co-Authors: Cheng Peng, Kun Ren, Bo Liu, Zhitang Song, Feng Rao, Min Zhu, Pingxiong Yang, Hongjia Song, Xilin Zhou, Junhao ChuAbstract:W-Sb-Te phase-change material has been proposed to improve the performance of phase-change memory (PCM). Crystallization temperature, crystalline resistance, and 10-year data retention of Sb2Te increase markedly by W doping. The Wx(Sb2Te)1−x films crystallize quickly into a stable hexagonal phase with W uniformly distributing in the crystal lattice, which ensures faster Set speed and better Operation stability for the application in practical device. PCM device based on W0.07(Sb2Te)0.93 shows ultrafast Set Operation (6 ns) and good endurance (1.8 × 105 cycles). W-Sb-Te material is a promising candidate for the trade-off between programming speed and data retention.
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ti10sb60te30 for phase change memory with high temperature data retention and rapid crystallization speed
Applied Physics Letters, 2012Co-Authors: Min Zhu, Kun Ren, Sannian Song, Zhitang Song, Daolin Cai, Feng Rao, Bo LiuAbstract:With a high crystallization temperature of 211 °C, Ti10Sb60Te30 phase change material exhibits a data retention of 10-yr at 137 °C, which is much better than that of usual Ge2Sb2Te5. No other phase is formed in Ti10Sb60Te30 film except hexagonal Sb2Te phase. For Ti10Sb60Te30-based phase change memory cell, as short as 6 ns electric pulse can fulfill the Set Operation, demonstrating an extremely rapid crystallization speed of Ti10Sb60Te30. The programming cycles can reach 2.2 × 104 with very short Set/ReSet pulses of 100 ns/50 ns.
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investigation of sb rich si2sb2 xte6 material for phase change random access memory application
Applied Physics A, 2011Co-Authors: Xilin Zhou, Bo Liu, Zhitang Song, Feng Rao, Songlin Feng, Dongning Yao, Weijun Yin, Bomy ChenAbstract:Sb-rich Si2Sb2+xTe6 (x=0, 1.4, 10) thin films are proposed to present the feasibility for electronic phase change memory application. The crystallization behavior is improved by adding Sb into the material. The crystallization temperature is about 506, 502, and 450 K for Si2Sb2Te6, Si2Sb3.4Te6, and Si2Sb12Te6 films, respectively, and the corresponding activation energy is in the range from 2.70 to 1.69 eV, which is expected for a low-power and high-speed Set Operation. In addition, maximum temperature for a 10 year data lifetime is estimated to be 133, 127, and 98°C, respectively. The memory devices are successfully fabricated employing these films, promising that the stability of the low-resistance crystalline state is improved by adding Sb into the stoichiometric Si2Sb2Te6 material, and the reversibility of the device is also realized for the Si2Sb12Te6-based cell.
