The Experts below are selected from a list of 98793 Experts worldwide ranked by ideXlab platform
J Laskar - One of the best experts on this subject based on the ideXlab platform.
-
a high power cmos switch using a novel adaptive Voltage swing distribution method in multistack fets
IEEE Transactions on Microwave Theory and Techniques, 2008Co-Authors: J LaskarAbstract:A high-power CMOS switch using a novel adaptive Voltage swing distribution method in a multistack field-effect transistor (FET) scheme is proposed. The proposed adaptive Voltage swing distribution method in multistack FETs is very effective in preventing unwanted channel formation with low control Voltage supply in OFF-state FETs. This, in turn, increases power-handling capability when a large-Signal Voltage swing is applied. In the proposed CMOS switch, the behavior of the Voltage swing in OFF-state multistack FETs shows a difference with respect to the level of input Voltage swing. The characteristics of Voltage swing distribution and leakage channel formation in the CMOS switch is fully analyzed with incorporation of the novel adaptive Voltage swing distribution method into a three-stacked nMOS Rx switch in a standard 0.18-mum triple-well CMOS process. In addition, linearity of the proposed technique is verified through the measurement data of the single-pole double-throw switches that employ the proposed technique in the Rx switch. Two different types of configurations are implemented and characterized at the Rx switches, which consist of four-stacked nMOS devices, to demonstrate the method of minimizing Voltage stress issues on one of the multistacked FETs. Layout consideration was also taken to prevent interference between leakage Signals at the substrate. The measured performance of the proposed design shows an input 0.3-dB compression point of 33.5 dBm at 1.9 GHz. To the best of our knowledge, this is the highest power-handling capability of a CMOS switch in a standard CMOS process ever reported. The insertion losses of the Tx and Rx switches are 1.6 and 1.9 dB, respectively, at 1.9 GHz. The isolation of the Tx and Rx switches is around 20 and 30 dB, respectively, at 1.9 GHz.
-
a high power cmos switch using a novel adaptive Voltage swing distribution method in multistack fets
IEEE Transactions on Microwave Theory and Techniques, 2008Co-Authors: Minsik Ahn, Changho Lee, Byungsung Kim, J LaskarAbstract:A high-power CMOS switch using a novel adaptive Voltage swing distribution method in a multistack field-effect transistor (FET) scheme is proposed. The proposed adaptive Voltage swing distribution method in multistack FETs is very effective in preventing unwanted channel formation with low control Voltage supply in OFF-state FETs. This, in turn, increases power-handling capability when a large-Signal Voltage swing is applied. In the proposed CMOS switch, the behavior of the Voltage swing in OFF-state multistack FETs shows a difference with respect to the level of input Voltage swing. The characteristics of Voltage swing distribution and leakage channel formation in the CMOS switch is fully analyzed with incorporation of the novel adaptive Voltage swing distribution method into a three-stacked nMOS Rx switch in a standard 0.18-mum triple-well CMOS process. In addition, linearity of the proposed technique is verified through the measurement data of the single-pole double-throw switches that employ the proposed technique in the Rx switch. Two different types of configurations are implemented and characterized at the Rx switches, which consist of four-stacked nMOS devices, to demonstrate the method of minimizing Voltage stress issues on one of the multistacked FETs. Layout consideration was also taken to prevent interference between leakage Signals at the substrate. The measured performance of the proposed design shows an input 0.3-dB compression point of 33.5 dBm at 1.9 GHz. To the best of our knowledge, this is the highest power-handling capability of a CMOS switch in a standard CMOS process ever reported. The insertion losses of the Tx and Rx switches are 1.6 and 1.9 dB, respectively, at 1.9 GHz. The isolation of the Tx and Rx switches is around 20 and 30 dB, respectively, at 1.9 GHz.
Gabriele Neretti - One of the best experts on this subject based on the ideXlab platform.
-
charge distribution on the surface of a dielectric barrier discharge actuator for the fluid dynamic control
Journal of Applied Physics, 2013Co-Authors: Andrea Cristofolini, C.a. Borghi, Gabriele NerettiAbstract:The electric potential distribution induced on the surface of an aerodynamic plasma actuator, operating by means of a surface dielectric barrier discharge (DBD), has been studied both numerically and experimentally. Three actuators made with three different dielectric materials (Teflon, Plexiglas, and glass) have been used. The geometric configuration of the three actuators is the same one. An electrode pair separated by a 2 mm thick dielectric sheet constitutes the DBD actuator. The exposed high Voltage electrode has been fed by a 5 kHz a.c. electrical Signal. Voltage values between 7.5 and 15 kVp have been used. Measurements of the distribution of the electrical potential in the dielectric surface, generated by the charge deposited on it, have been done. Numerical simulations allowed to evaluating the charge distribution on the dielectric surface. The discharge has been switched off after positive and negative plasma currents. The measurements have been carried out after both phases. The potential distr...
-
charge distribution on the surface of a dielectric barrier discharge actuator for the fluid dynamic control
Journal of Applied Physics, 2013Co-Authors: Andrea Cristofolini, C.a. Borghi, Gabriele NerettiAbstract:The electric potential distribution induced on the surface of an aerodynamic plasma actuator, operating by means of a surface dielectric barrier discharge (DBD), has been studied both numerically and experimentally. Three actuators made with three different dielectric materials (Teflon, Plexiglas, and glass) have been used. The geometric configuration of the three actuators is the same one. An electrode pair separated by a 2 mm thick dielectric sheet constitutes the DBD actuator. The exposed high Voltage electrode has been fed by a 5 kHz a.c. electrical Signal. Voltage values between 7.5 and 15 kVp have been used. Measurements of the distribution of the electrical potential in the dielectric surface, generated by the charge deposited on it, have been done. Numerical simulations allowed to evaluating the charge distribution on the dielectric surface. The discharge has been switched off after positive and negative plasma currents. The measurements have been carried out after both phases. The potential distribution is always positive. The charge build up takes place several centimeters downstream of the upper electrode for an extension broader than that of the plasma on the dielectric surface. The charge distribution strongly depends on the switching off phase and is heavily affected by the dielectric material. In order to evaluate the discharge structure and the extension of the plasma, images have been taken also.
Pablo Garcia - One of the best experts on this subject based on the ideXlab platform.
-
high frequency carrier Signal Voltage selection for stator winding fault diagnosis in inverter fed ac machines
IEEE Transactions on Industrial Electronics, 2008Co-Authors: M W Degne, Pablo Garcia, A DiezAbstract:The diagnosis of stator winding faults in inverter-fed AC machines using an injected high-frequency carrier-Signal Voltage is analyzed in this paper. Measurement of the resulting carrier Signals (either the negative-sequence carrier-Signal current or the zero-sequence components) is used to detect turn faults at an incipient stage. The carrier frequency and magnitude are shown to have significant impact on the performance of the method, with the criteria for their selection being presented. The proposed technique shows low sensitivity to the working condition of the machine, i.e., torque level, flux levels, and fundamental excitation frequency.
-
Accuracy, Bandwidth, and Stability Limits of Carrier-Signal-Injection-Based Sensorless Control Methods
IEEE Transactions on Industry Applications, 2007Co-Authors: Pablo Garcia, Fernando Briz, M.w. Degner, David Diaz-reigosaAbstract:This paper studies the performance limits of carrier-Signal-injection-based sensorless control methods. When a high-frequency carrier-Signal Voltage is injected into a salient ac machine, two types of Signals are created that can be used to estimate the rotor position: 1) the negative-sequence carrier-Signal current and 2) the zero-sequence carrier-Signal components. The limitations of ac machine sensorless control using each of these Signals are analyzed in this paper. The analysis focuses on three key performance metrics: 1) the accuracy; 2) the bandwidth; and 3) the stability of the estimated position.
-
Rotor position estimation of AC machines using the zero sequence carrier Signal Voltage
IEEE Transactions on Industry Applications, 2005Co-Authors: Fernando Briz, M.w. Degner, Pablo Garcia, J.m. GuerreroAbstract:This paper analyzes the sensorless control of AC machines based on the zero sequence Voltage generated by the injection of a carrier Signal Voltage. The analysis focuses on rotor position estimation (tracking of rotor-position-dependent saliencies) but the methods discussed apply equally to flux position estimation (tracking of flux-dependent saliencies). Analysis of relevant aspects, like selection of the carrier Signal frequency, measurement of the zero sequence carrier Signal Voltage, and decoupling of saturation-induced saliencies are included.
Andrea Cristofolini - One of the best experts on this subject based on the ideXlab platform.
-
charge distribution on the surface of a dielectric barrier discharge actuator for the fluid dynamic control
Journal of Applied Physics, 2013Co-Authors: Andrea Cristofolini, C.a. Borghi, Gabriele NerettiAbstract:The electric potential distribution induced on the surface of an aerodynamic plasma actuator, operating by means of a surface dielectric barrier discharge (DBD), has been studied both numerically and experimentally. Three actuators made with three different dielectric materials (Teflon, Plexiglas, and glass) have been used. The geometric configuration of the three actuators is the same one. An electrode pair separated by a 2 mm thick dielectric sheet constitutes the DBD actuator. The exposed high Voltage electrode has been fed by a 5 kHz a.c. electrical Signal. Voltage values between 7.5 and 15 kVp have been used. Measurements of the distribution of the electrical potential in the dielectric surface, generated by the charge deposited on it, have been done. Numerical simulations allowed to evaluating the charge distribution on the dielectric surface. The discharge has been switched off after positive and negative plasma currents. The measurements have been carried out after both phases. The potential distr...
-
charge distribution on the surface of a dielectric barrier discharge actuator for the fluid dynamic control
Journal of Applied Physics, 2013Co-Authors: Andrea Cristofolini, C.a. Borghi, Gabriele NerettiAbstract:The electric potential distribution induced on the surface of an aerodynamic plasma actuator, operating by means of a surface dielectric barrier discharge (DBD), has been studied both numerically and experimentally. Three actuators made with three different dielectric materials (Teflon, Plexiglas, and glass) have been used. The geometric configuration of the three actuators is the same one. An electrode pair separated by a 2 mm thick dielectric sheet constitutes the DBD actuator. The exposed high Voltage electrode has been fed by a 5 kHz a.c. electrical Signal. Voltage values between 7.5 and 15 kVp have been used. Measurements of the distribution of the electrical potential in the dielectric surface, generated by the charge deposited on it, have been done. Numerical simulations allowed to evaluating the charge distribution on the dielectric surface. The discharge has been switched off after positive and negative plasma currents. The measurements have been carried out after both phases. The potential distribution is always positive. The charge build up takes place several centimeters downstream of the upper electrode for an extension broader than that of the plasma on the dielectric surface. The charge distribution strongly depends on the switching off phase and is heavily affected by the dielectric material. In order to evaluate the discharge structure and the extension of the plasma, images have been taken also.
K Nakazawa - One of the best experts on this subject based on the ideXlab platform.
-
analog recurrent decision circuit with high Signal Voltage symmetry and delay time equality to improve continuous time convergence performance
IEEE Transactions on Neural Networks, 2003Co-Authors: Akira Hirose, K NakazawaAbstract:This paper reports experimental results showing that the recall dynamics of analog associative memories is largely influenced by Signal-Voltage symmetry of synaptic weights and inverse-noninverse delay-time equality of neurons. We propose a highly symmetric synapse and an equi-delaying neuron. We fabricated an association chip comprised of them to demonstrate a high association performance. In comparison experiments, we also observe large performance degradations when the symmetry or delay equality is deteriorated. We analyze the dynamics based on the statistics of recall results. The proposals and the analysis results are widely applicable to analog recurrent convergence circuits.
-
analog continuous time recurrent decision circuit with high Signal Voltage symmetry and delay time equality
International Symposium on Circuits and Systems, 2003Co-Authors: Akira Hirose, K NakazawaAbstract:Recurrent-convergence decision circuits include the historic Hopfield neural networks as well as prospective turbo decoders. For these applications, we propose two novel circuit elements: (1) a quick-response synaptic weight with high symmetry in both small-Signal and large-amplitude operations and (2) an open-loop, quick-response and symmetrically parallel neuron circuit that has inverse and non-inverse outputs with delay-time equality and high Signal-amplitude symmetry. We report the characteristics of these elements in a fabricated associative memory chip. We also analyze how the recalling statistics depend on the variation of the symmetry and delay equality of the elements. It is demonstrated that the proposals are very effective to improve the neural association performance.
