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Wilfried Vandervorst - One of the best experts on this subject based on the ideXlab platform.
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conductive atomic force microscopy studies of thin Sio2 layer degradation
Applied Physics Letters, 2006Co-Authors: Patrick Fiorenza, Wouter Polspoel, Wilfried VandervorstAbstract:The dielectric degradation of ultrathin (∼2nm) Silicon Dioxide (Sio2) layers has been investigated by constant and ramped voltage stresses with the conductive atomic force microscopy (CAFM). CAFM imaging shows clearly the lateral degradation propagation and its saturation. Current-voltage characteristics, performed at nanometer scale, show the trap creation rate in function of the stress condition. The critical trap density has been found.
Heiner Ryssel - One of the best experts on this subject based on the ideXlab platform.
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effect of increased oxide hole trap density due to nitrogen incorporation at the Sio2 sic interface on f n current degradation
Materials Science Forum, 2011Co-Authors: Christian Strenger, A J Bauer, Heiner RysselAbstract:Metal-oxide-semiconductor (MOS) capacitors were formed on 4H-Silicon carbide (SiC) using thermally grown Silicon Dioxide (Sio2) as gate dielectrics, both with and without nitrogen incorporation within the oxide. The field dependence of the charge trapping properties of these structures was analyzed and linked to the observed Fowler-Nordheim current degradation. Furthermore, first considerations were presented that indicate an electron impact emission induced generation of positive oxide trapped charge.
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Effect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the Sio2/SiC Interface on F-N Current Degradation
Materials Science Forum, 2011Co-Authors: Christian Strenger, A J Bauer, Heiner RysselAbstract:Metal-oxide-semiconductor (MOS) capacitors were formed on 4H-Silicon carbide (SiC) using thermally grown Silicon Dioxide (Sio2) as gate dielectrics, both with and without nitrogen incorporation within the oxide. The field dependence of the charge trapping properties of these structures was analyzed and linked to the observed Fowler-Nordheim current degradation. Furthermore, first considerations were presented that indicate an electron impact emission induced generation of positive oxide trapped charge.
Patrick Fiorenza - One of the best experts on this subject based on the ideXlab platform.
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conductive atomic force microscopy studies of thin Sio2 layer degradation
Applied Physics Letters, 2006Co-Authors: Patrick Fiorenza, Wouter Polspoel, Wilfried VandervorstAbstract:The dielectric degradation of ultrathin (∼2nm) Silicon Dioxide (Sio2) layers has been investigated by constant and ramped voltage stresses with the conductive atomic force microscopy (CAFM). CAFM imaging shows clearly the lateral degradation propagation and its saturation. Current-voltage characteristics, performed at nanometer scale, show the trap creation rate in function of the stress condition. The critical trap density has been found.
H.r. Philipp - One of the best experts on this subject based on the ideXlab platform.
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Silicon Dioxide (Sio2) (Glass)
Handbook of Optical Constants of Solids, 2007Co-Authors: H.r. PhilippAbstract:Publisher Summary The room-temperature optical properties of Silicon Dioxide (Sio2) glass is extensively analyzed to obtain a self-consistent set of optical constants, refractive index n and extinction coefficient k , for this material, especially in the regions of strong absorption in the infrared and vacuum ultraviolet. However, when the absorption is high, these optical constants are usually obtained by Kramers- Kronig (KK) analysis of reflectance data that are difficult to measure with high accuracy. The KK analysis requires extrapolations into spectral regions for which no data exist, thereby introducing additional uncertainties in the derived n and k values. But in the region of low absorption, the index of refraction can be evaluated from prism data, and this is accomplished with great precision for Sio2. It is also noted for Sio2, the presence of water or OH absorption in the samples makes the determination of the intrinsic k values extremely difficult in certain parts of the infrared and vacuum ultraviolet spectral regions.
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Handbook of Optical Constants of Solids, Volume 1 - Silicon Dioxide (Sio2), Type α (Crystalline)
Handbook of Optical Constants of Solids, 2007Co-Authors: H.r. PhilippAbstract:Publisher Summary This chapter describes the optical properties of type α, crystalline Silicon Dioxide (Sio2). In the infrared spectral region, this information is provided in detail. In the vacuum ultraviolet, however, little amount of data is available to obtain a self-consistent set of optical constants refractive index n and extinction coefficient k for Sio2. These parameters are generally obtained by Kramers-Kronig (KK) analysis of reflectance data, which is difficult to measure with high accuracy. In addition, the analysis in the case of Sio2 requires extrapolation of the reflectance into spectral regions in which no data exist. This introduces a considerable uncertainty in the derived n and k values. It is noted that in the region of low absorption between the infrared and vacuum ultraviolet bands, the index of refraction can be evaluated from prism data, and this has been accomplished with great precision. The measured k values, however, can be strongly influenced by the presence of impurity and defect absorption.
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Silicon Dioxide Sio2 type α crystalline
Handbook of Optical Constants of Solids, 1997Co-Authors: H.r. PhilippAbstract:Publisher Summary This chapter describes the optical properties of type α, crystalline Silicon Dioxide (Sio2). In the infrared spectral region, this information is provided in detail. In the vacuum ultraviolet, however, little amount of data is available to obtain a self-consistent set of optical constants refractive index n and extinction coefficient k for Sio2. These parameters are generally obtained by Kramers-Kronig (KK) analysis of reflectance data, which is difficult to measure with high accuracy. In addition, the analysis in the case of Sio2 requires extrapolation of the reflectance into spectral regions in which no data exist. This introduces a considerable uncertainty in the derived n and k values. It is noted that in the region of low absorption between the infrared and vacuum ultraviolet bands, the index of refraction can be evaluated from prism data, and this has been accomplished with great precision. The measured k values, however, can be strongly influenced by the presence of impurity and defect absorption.
Fazida Asma Omar - One of the best experts on this subject based on the ideXlab platform.
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Effect of micro-sized Silicon Dioxide (Sio2) on the electrical properties of chitosan based polymer electrolyte / Fazida Asma Omar
2012Co-Authors: Fazida Asma OmarAbstract:Polymer electrolyte based on lithium triflate, LiCF3SO3 salt, high molecule weight of chitosan from natural polymer and filler micro sized Silicon Dioxide, Sio2 was prepared using casting technique. The effect of filler micro-sized Silicon Dioxide on the ion mobility of chitosan-LiCF3SO3 electrolyte has been investigated. The ionic conductivity of chitosan-LiCF3SO3-Sio2 system has conducted over wide range of frequency and at temperatures between 303 K and 343 K. The conductivity is due to the ionic mobility and charge carrier. The conductivity was calculated using the value of bulk impedance that obtain from the impedance spectroscopy by the Cole-cole plots illustrating the variation of the negative imaginary impedance with the real impedance. Dielectric data were analyzed using the complex permittivity, e*, complex electrical modulus, M*, tangen loss, tan δ, relaxation time and activation energy have determines at various temperature and frequencies. The temperature dependent conductivity data for each sample obeys an Arrhenius relationship. FTIR spectroscopy technique were used in the complexation studies
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effect of micro sized Silicon Dioxide Sio2 on the electrical properties of chitosan based polymer electrolyte fazida asma omar
2012Co-Authors: Fazida Asma OmarAbstract:Polymer electrolyte based on lithium triflate, LiCF3SO3 salt, high molecule weight of chitosan from natural polymer and filler micro sized Silicon Dioxide, Sio2 was prepared using casting technique. The effect of filler micro-sized Silicon Dioxide on the ion mobility of chitosan-LiCF3SO3 electrolyte has been investigated. The ionic conductivity of chitosan-LiCF3SO3-Sio2 system has conducted over wide range of frequency and at temperatures between 303 K and 343 K. The conductivity is due to the ionic mobility and charge carrier. The conductivity was calculated using the value of bulk impedance that obtain from the impedance spectroscopy by the Cole-cole plots illustrating the variation of the negative imaginary impedance with the real impedance. Dielectric data were analyzed using the complex permittivity, e*, complex electrical modulus, M*, tangen loss, tan δ, relaxation time and activation energy have determines at various temperature and frequencies. The temperature dependent conductivity data for each sample obeys an Arrhenius relationship. FTIR spectroscopy technique were used in the complexation studies