The Experts below are selected from a list of 333 Experts worldwide ranked by ideXlab platform

R A Buhrman - One of the best experts on this subject based on the ideXlab platform.

  • boron diffusion in Silicon Oxides and oxynitrides
    Journal of The Electrochemical Society, 1998
    Co-Authors: K A Ellis, R A Buhrman
    Abstract:

    A new model is developed for boron diffusion in Silicon Oxides and oxynitrides in which boron diffuses substitutionally for Silicon atoms, and the role of incorporated nitrogen is to occlude diffusion pathways. A Monte Carlo simulation based on this model, when compared to a series of experiments on p-MOS-type structures, accurately accounts for lowered diffusivities due to incorporated nitrogen.

  • role of interfacial nitrogen in improving thin Silicon Oxides grown in n2o
    Applied Physics Letters, 1993
    Co-Authors: E C Carr, R A Buhrman
    Abstract:

    We have used chemical depth profiling, with a depth resolution of 10 A, in conjunction with x‐ray photoelectron spectroscopy to study the composition and chemical bonding in thin Silicon Oxides grown in N2O with both a conventional furnace and a rapid thermal annealer (RTA) process. The nitrogen profiles of RTA and furnace Oxides differ, with the RTA Oxides showing an increase in nitrogen concentration at the interface and the furnace Oxides showing a more uniform nitrogen distribution. The percentage of nitrogen at the interface also differs, and correlates with a reduction in interface state generation under current injection for increased nitrogen concentration. The chemical environment for the nitrogen changes with distance from the interface, and this is attributed to an increasing number of nitrogen—Silicon bonds near the interface.

D.j. Dumin - One of the best experts on this subject based on the ideXlab platform.

  • Differentiation Between Electric Breakdowns and Dielectric Breakdown in Thin Silicon Oxides
    Journal of The Electrochemical Society, 1998
    Co-Authors: J.c. Jackson, T. Robinson, Omer Oralkan, D.j. Dumin, George A. Brown
    Abstract:

    In several models of dielectric breakdown, nondestructive electric breakdowns precede destructive thermal dielectric breakdown. Both processes in Oxides between 5 nm and 80 nm thick have been studied. The two breakdown phenomena have been differentiated, and the electric breakdowns have been separated from the dielectric breakdown. During constant voltage stressings, prior to dielectric breakdown, transient voltage spikes were measured and spots formed on the surface of the wafers due to electric breakdowns. Similar transient spikes occurred when measuring ramped breakdown voltages. It was found that the time dependent dielectric breakdown (TDDB) distributions measured on a series of identical Oxides at the same voltages depended on the resistance and capacitance of the measurement test equipment due to the thermal nature of the dielectric breakdown. The TDDB distributions were shifted to shorter times if (i) the impedance of the test equipment was lowered and/or (ii) the capacitance of the test equipment was raised. The implications of this work are discussed in terms of electric and dielectric breakdown models and practical circuit and device operation.

  • the charging and discharging of high voltage stress generated traps in thin Silicon oxide
    IEEE Transactions on Electron Devices, 1996
    Co-Authors: R S Scott, D.j. Dumin
    Abstract:

    Excess high-voltage stress-generated low-level leakage currents through 10 nm Silicon Oxides, previously described as DC currents, are shown to decay to the limit of detection given adequate observation time and, thus, have no discernible component. A physical model is presented which describes the majority of the excess low-level leakage currents in terms of the charging and discharging of traps previously generated by the high voltage stress. Excess low-level leakage currents measured with voltage pulses with polarity opposite to that of the stress voltage are found to contain an additional current component, which is explained by the transient charging and discharging of certain traps inside the oxide. Evidence is presented which suggests that an oxide trap generated by the high-voltage stress can contain either a positive or a negative charge, in addition to being neutral and that the traps are located near both oxide interfaces. All of the trap charging and discharging currents can be explained by the flow of electrons into and out of traps generated by the high voltage stress, without resorting to the flow of holes in the oxide.

  • high field related thin oxide wearout and breakdown
    IEEE Transactions on Electron Devices, 1995
    Co-Authors: D.j. Dumin, S Mopuri, S Vanchinathan, R S Scott, R Subramoniam, T G Lewis
    Abstract:

    The high voltage wearout and breakdown of thin Silicon Oxides has been described in terms of traps generated inside of the oxide and at the interfaces by a high field emission process. The trap generation was accompanied by the motion of atoms which resulted in permanent traps fixed in space. Breakdown occurred when the local density of traps exceeded a critical density. The charge state of these traps could easily be changed by application of low voltages after the high voltage stresses. The energy levels of the traps varied depending on the probability of trap generation. This model has been applied to analyze the thickness, field, polarity, time, and temperature dependences of oxide wearout and breakdown observed in Oxides thinner than 22 mn. It was concluded that the wearout process in Oxides thinner than 22 nm was determined by the electric fields applied to the Oxides and not by the passage of currents through the Oxides. >

  • Differentiation between electric breakdowns and dielectric breakdown in thin Silicon Oxides
    Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 1
    Co-Authors: J.c. Jackson, T. Robinson, Omer Oralkan, D.j. Dumin, George A. Brown
    Abstract:

    It has been known for some time that non-destructive electric breakdowns precede destructive thermal dielectric breakdown. We have been studying both processes in Oxides between 5 nm and 80 nm in thickness. We have shown that the electric breakdowns can trigger dielectric breakdown under certain conditions. This triggering of dielectric breakdown causes TDDB distributions to be non-unique. The TDDB distributions could be shifted to shorter times if (a) the impedance of the test equipment was lowered and/or (b) the capacitance of the test equipment was raised. The implications of this work are discussed in terms of electric/dielectric breakdown models and practical circuit and device operation.

Peter Mascher - One of the best experts on this subject based on the ideXlab platform.

  • structure and luminescence of rare earth doped Silicon Oxides studied through their x ray absorption near edge structure and x ray excited optical luminescence
    Physica Status Solidi B-basic Solid State Physics, 2010
    Co-Authors: Tyler Roschuk, O H Y Zalloum, J. Wojcik, P R J Wilson, Peter Mascher
    Abstract:

    The X-ray absorption near edge structure (XANES) and X-ray excited optical luminescence (XEOL) of a set of photoluminescent rare earth (RE) (Tb, Ce) doped Silicon oxide (SiO x ) thin films, having compositions ranging from O-rich (32% Si) to Si-rich (36% Si), were analyzed at the Si and O K-edges. The results show that luminescence from these materials is correlated with the excitation of O-related energy states, and demonstrate that the composition and bonding structure of the Silicon oxide host matrix play an active role in determining the luminescent properties of these materials, although the microstructure of the films may vary from film to film.

  • the formation of light emitting cerium silicates in cerium doped Silicon Oxides
    Applied Physics Letters, 2009
    Co-Authors: O H Y Zalloum, Tyler Roschuk, C L Heng, J. Wojcik, Peter Mascher
    Abstract:

    Cerium-doped Silicon Oxides with cerium concentrations of up to 0.9 at. % were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Bright cerium related photoluminescence, easily seen even under room lighting conditions, was observed from the films and found to be sensitive to film composition and annealing temperature. The film containing 0.9 at. % Ce subjected to anneal in N2 at 1200 °C for 3 h showed the most intense cerium-related emission, easily visible under bright room lighting conditions. This is attributed to the formation of cerium silicate [Ce2Si2O7 or Ce4.667 (SiO4)3O], the presence of which was confirmed by high resolution transmission electron microscopy.

  • x ray diffraction study of crystalline si nanocluster formation in annealed Silicon rich Silicon Oxides
    Journal of Applied Physics, 2006
    Co-Authors: D Comedi, O H Y Zalloum, Tyler Roschuk, J. Wojcik, E Irving, M Flynn, Peter Mascher
    Abstract:

    Fil: Comedi, David Mario. Universidad Nacional de Tucuman. Facultad de Ciencias Exactas y Tecnologia. Departamento de Fisica. Laboratorio de Fisica del Solido; Argentina. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnologico Conicet - Tucuman; Argentina

Yixiong Wu - One of the best experts on this subject based on the ideXlab platform.

  • cu nanoparticles effect on the tribological properties of hydrosilicate powders as lubricant additive for steel steel contacts
    Tribology International, 2011
    Co-Authors: Baosen Zhang, Binshi Xu, Yi Xu, Yixiong Wu
    Abstract:

    Abstract The effect of Cu nanoparticles (NPs) on the tribological behaviors of serpentine powders (SPs) suspended in diesel oil was investigated. Results show that the optimum mass ratio of Cu NPs to SPs is 7.5:92.5. With the addition of the above mixture to oil, the tribological properties can be significantly improved compared with those of the oil containing SPs alone. A more smooth and compact tribofilm has formed on the worn surface, which is responsible for the further reduced friction and wear, mainly with iron Oxides, Silicon Oxides, species enriched in Si–O structures, graphite, organic compounds, and Cu0, Cu1+ and Cu2+ species.

  • sliding friction and wear behaviors of surface coated natural serpentine mineral powders as lubricant additive
    Applied Surface Science, 2011
    Co-Authors: Baosen Zhang, Binshi Xu, Yi Xu, Yixiong Wu
    Abstract:

    Abstract This work aims to investigate the friction and wear properties of surface-coated natural serpentine powders (SP) suspended in diesel engine oil using an Optimal SRV oscillating friction and wear tester. The worn surface was characterized by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) equipped with energy dispersive spectroscopy (EDS). Results indicated that the additives can improve the wear resistance and decrease friction coefficient of carbon steel friction couples. The 0.5 wt% content of serpentine powders is found most efficient in reducing friction and wear at the load of 50 N. The SEM and XPS analysis results demonstrate that a tribofilm forms on the worn surface, which is responsible for the decrease in friction and wear, mainly with iron Oxides, Silicon Oxides, graphite and organic compounds.

Mihkel Rähn - One of the best experts on this subject based on the ideXlab platform.

  • Magnetic properties and resistive switching in mixture films and nanolaminates consisting of iron and Silicon Oxides grown by atomic layer deposition
    Journal of Vacuum Science & Technology A, 2020
    Co-Authors: Kaupo Kukli, Marianna Kemell, Helena Castán, Salvador Dueñas, Joosep Link, Raivo Stern, Mikko Heikkilä, Taivo Jõgiaas, Jekaterina Kozlova, Mihkel Rähn
    Abstract:

    SiO2-Fe2O3 mixture films and nanolaminates were grown by atomic layer deposition from iron trichloride, hexakis(ethylamino)disilane, and ozone at 300 °C. Orthorhombic ɛ-Fe2O3 was identified in Fe2O3 reference films and in Fe2O3 layers grown to certain thicknesses between amorphous SiO2 layers. SiO2-Fe2O3 films could be magnetized in external fields, exhibiting saturation and hysteresis in nonlinear magnetization-field curves. Electrical resistive switching, markedly dependent on the ratio of the component Oxides, was also observed in films with proper composition. For relatively conductive films, application of small signal measurements allowed one to record memory maps with notable squareness and defined distinction between high and low conductance states.