The Experts below are selected from a list of 36363 Experts worldwide ranked by ideXlab platform
B. Dinkespiler - One of the best experts on this subject based on the ideXlab platform.
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Study of the X-ray scattering in the Silicon and CdTe XPAD
2012Co-Authors: K. Medjoubi, S. Hustache, J.-c. Clémens, B. Dinkespiler, P. Mercère, S. Ravy, J.-f. Bérar, N. Boudet, A. Dawiec, P. DelpierreAbstract:The XPAD3, a photon counting hybrid pixel detector developed in collaboration by SOLEIL Synchrotron, the Institut Néel and the Centre de Physique des Particules de Marseille (CPPM) [1], is now successfully used for a large variety of X-ray experiments on third generation synchrotron light sources [2]. Several 7.3 cm x 12.5 cm imagers composed of 8 Silicon modules (7 chips per module, 9600 pixel of 130μm side per chip) are routinely used on different synchrotron beamlines at Soleil and on the CRG beamline D2AM at ESRF. Detector performances such as noiseless detection, high dynamic (27 bits) and fast framing rate (640 fps) have opened up the possibility of new or improved types of measurements. Nevertheless, above 15 keV, besides the loss of efficiency [2], the X-ray scattering in Silicon Sensor and the material located behind significantly increases the shape and the width of thepoint-spread function at 0.01% of the maximum. This effect prevents the study of low intensity phenomena such as diffuse scattering, which would be observed at the foot of theBragg peak and theoretically measurable with the large dynamic of the detector. This effect has been measured at different energies with monochromatic synchrotron beam (on CRISTAL and METROLOGIE Soleil beamlines) on a mono module Silicon XPAD and then compared with a Quad CdTe XPAD prototype (cf. figure 1). The results, which will be presented, demonstrate the superiority of the high Z Sensor and push the investigation of the CdTe as a material Sensor even at mid energy.
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Detective Quantum Efficiency Modulation Tranfer Function and Energy Resolution Comparison Between CdTe and Silicon Sensors Bump-Bonded to XPAD3S
Journal of Synchrotron Radiation, 2010Co-Authors: K. Medjoubi, T. Bucaille, S. Hustache, Jean-françois Bérar, Nathalie Boudet, J.-c. Clémens, P. Delpierre, B. DinkespilerAbstract:XPAD3S is a single-photon-counting chip developed in collaboration by SOLEIL Synchrotron, the Institut Louis Néel and the Centre de Physique de Particules de Marseille. The circuit, designed in the 0.25 mm IBM technology, contains 9600 square pixels with 130 mm side giving a total size of 1 cm _ 1.5 cm. The main features of each pixel are: single threshold adjustable from 4.5 keV up to 35 keV, 2 ms frame rate, 107 photons s_1 mm_2 maximum local count rate, and a 12-bit internal counter with overflow allowing a full 27-bit dynamic range to be reached. The XPAD3S was hybridized using the flip-chip technology with both a 500 mm Silicon Sensor and a 700 mm CdTe Sensor with Schottky contacts. Imaging performances of both detectors were evaluated using X-rays from 6 keV up to 35 keV. The detective quantum efficiency at zero line-pairs mm_1 for a Silicon Sensor follows the absorption law whereas for CdTe a strong deficit at low photon energy, produced by an inefficient entrance layer, is measured. The modulation transfer function was evaluated and it was shown that both detectors present an ideal modulation transfer function at 26 keV, limited only by the pixel size. The influence of the Cd and Te K-edges of the CdTe Sensor was measured and simulated, establishing that fluorescence photons reduce the contrast transfer at the Nyquist frequency from 60% to 40% which remains acceptable. The energy resolution was evaluated at 6% with Silicon using 16 keV X-rays, and 8% with CdTe using 35 keV X-rays. A 7 cm _ 12 cm XPAD3 imager, built with eight Silicon modules (seven circuits per module) tiled together, was successfully used for X-ray diffraction experiments. A first result recently obtained with a new 2 cm _ 3 cm CdTe imager is also presented.
K. Medjoubi - One of the best experts on this subject based on the ideXlab platform.
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Study of the X-ray scattering in the Silicon and CdTe XPAD
2012Co-Authors: K. Medjoubi, S. Hustache, J.-c. Clémens, B. Dinkespiler, P. Mercère, S. Ravy, J.-f. Bérar, N. Boudet, A. Dawiec, P. DelpierreAbstract:The XPAD3, a photon counting hybrid pixel detector developed in collaboration by SOLEIL Synchrotron, the Institut Néel and the Centre de Physique des Particules de Marseille (CPPM) [1], is now successfully used for a large variety of X-ray experiments on third generation synchrotron light sources [2]. Several 7.3 cm x 12.5 cm imagers composed of 8 Silicon modules (7 chips per module, 9600 pixel of 130μm side per chip) are routinely used on different synchrotron beamlines at Soleil and on the CRG beamline D2AM at ESRF. Detector performances such as noiseless detection, high dynamic (27 bits) and fast framing rate (640 fps) have opened up the possibility of new or improved types of measurements. Nevertheless, above 15 keV, besides the loss of efficiency [2], the X-ray scattering in Silicon Sensor and the material located behind significantly increases the shape and the width of thepoint-spread function at 0.01% of the maximum. This effect prevents the study of low intensity phenomena such as diffuse scattering, which would be observed at the foot of theBragg peak and theoretically measurable with the large dynamic of the detector. This effect has been measured at different energies with monochromatic synchrotron beam (on CRISTAL and METROLOGIE Soleil beamlines) on a mono module Silicon XPAD and then compared with a Quad CdTe XPAD prototype (cf. figure 1). The results, which will be presented, demonstrate the superiority of the high Z Sensor and push the investigation of the CdTe as a material Sensor even at mid energy.
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Detective Quantum Efficiency Modulation Tranfer Function and Energy Resolution Comparison Between CdTe and Silicon Sensors Bump-Bonded to XPAD3S
Journal of Synchrotron Radiation, 2010Co-Authors: K. Medjoubi, T. Bucaille, S. Hustache, Jean-françois Bérar, Nathalie Boudet, J.-c. Clémens, P. Delpierre, B. DinkespilerAbstract:XPAD3S is a single-photon-counting chip developed in collaboration by SOLEIL Synchrotron, the Institut Louis Néel and the Centre de Physique de Particules de Marseille. The circuit, designed in the 0.25 mm IBM technology, contains 9600 square pixels with 130 mm side giving a total size of 1 cm _ 1.5 cm. The main features of each pixel are: single threshold adjustable from 4.5 keV up to 35 keV, 2 ms frame rate, 107 photons s_1 mm_2 maximum local count rate, and a 12-bit internal counter with overflow allowing a full 27-bit dynamic range to be reached. The XPAD3S was hybridized using the flip-chip technology with both a 500 mm Silicon Sensor and a 700 mm CdTe Sensor with Schottky contacts. Imaging performances of both detectors were evaluated using X-rays from 6 keV up to 35 keV. The detective quantum efficiency at zero line-pairs mm_1 for a Silicon Sensor follows the absorption law whereas for CdTe a strong deficit at low photon energy, produced by an inefficient entrance layer, is measured. The modulation transfer function was evaluated and it was shown that both detectors present an ideal modulation transfer function at 26 keV, limited only by the pixel size. The influence of the Cd and Te K-edges of the CdTe Sensor was measured and simulated, establishing that fluorescence photons reduce the contrast transfer at the Nyquist frequency from 60% to 40% which remains acceptable. The energy resolution was evaluated at 6% with Silicon using 16 keV X-rays, and 8% with CdTe using 35 keV X-rays. A 7 cm _ 12 cm XPAD3 imager, built with eight Silicon modules (seven circuits per module) tiled together, was successfully used for X-ray diffraction experiments. A first result recently obtained with a new 2 cm _ 3 cm CdTe imager is also presented.
Anna Koziol - One of the best experts on this subject based on the ideXlab platform.
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Development of a New Data Acquisition System for a Photon Counting Detector Prototype at SOLEIL Synchrotron
2019Co-Authors: Gauthier Thibaux, Anna Koziol, Pawel Grybos, Yves-marie Abiven, Diana Bachiller-perea, Jerome Bisou, Arkadiusz Dawiec, Amélie Jarnac, Brahim Kanoute, Florent LangloisAbstract:Time-resolved pump-probe experiments at SOLEIL Synchrotron (France) have motivated the development of a new and fast photon counting camera prototype. The core of the camera is a hybrid pixel detector, based on the UFXC32k readout chips bump-bonded to a Silicon Sensor. This detector exhibits promising performances with very fast readout time, high dynamic range, extended count rate linearity and optimized X-ray detection in the energy range 5-15 keV. In close collaboration with CRISTAL beamline, SOLEIL’s Detector, Electronics and Software Groups carried out a common R&D project to design and realize a 2-chips camera prototype with a high-speed data acquisition system. The system has been fully integrated into Tango and Lima data acquisition framework used at SOLEIL. The development and first experimental results will be presented in this paper.
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Hardware solutions for the 65k pixel X-ray camera module of 75 μm pixel size
Journal of Instrumentation, 2016Co-Authors: Krzysztof Kasinski, Pawel Grybos, Anna KoziolAbstract:We present three hardware solutions designed for a detector module built with a 2 cm × 2 cm hybrid pixel detector built from a single 320 or 450 μ m thick Silicon Sensor designed and fabricated by Hamamatsu and two UFXC32k readout integrated circuits (128 × 256 pixels with 75μ m pitch, designed in CMOS 130 nm at AGH-UST). The chips work in a single photon counting mode and provide ultra-fast X-ray imaging. The presented hardware modules are designed according to requirements of various tests and applications: ⋅Device A: a fast and flexible system for tests with various radiation sources. ⋅Device B: a standalone, all-in-one imaging device providing three standard interfaces (USB 2.0, Ethernet, Camera Link) and up to 640 MB/s bandwidth. ⋅Device C: a prototype large-area imaging system. The paper shows the readout system structure for each case with highlighted circuit board designs with details on power distribution and cooling on both FR4 and LTCC (low temperature co-fired ceramic) based circuits.
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hardware solutions for the 65k pixel x ray camera module of 75 μm pixel size
Journal of Instrumentation, 2016Co-Authors: Krzysztof Kasinski, P Maj, Pawel Grybos, Anna KoziolAbstract:We present three hardware solutions designed for a detector module built with a 2 cm × 2 cm hybrid pixel detector built from a single 320 or 450 μ m thick Silicon Sensor designed and fabricated by Hamamatsu and two UFXC32k readout integrated circuits (128 × 256 pixels with 75μ m pitch, designed in CMOS 130 nm at AGH-UST). The chips work in a single photon counting mode and provide ultra-fast X-ray imaging. The presented hardware modules are designed according to requirements of various tests and applications: ⋅Device A: a fast and flexible system for tests with various radiation sources. ⋅Device B: a standalone, all-in-one imaging device providing three standard interfaces (USB 2.0, Ethernet, Camera Link) and up to 640 MB/s bandwidth. ⋅Device C: a prototype large-area imaging system. The paper shows the readout system structure for each case with highlighted circuit board designs with details on power distribution and cooling on both FR4 and LTCC (low temperature co-fired ceramic) based circuits.
Frédéric Wrobel - One of the best experts on this subject based on the ideXlab platform.
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Determination of the deposited energy in a Silicon volume by n-Si nuclear interaction
Journal of Applied Physics, 2006Co-Authors: H. Chabane, J.-r. Vaille, T. Merelle, Frédéric Saigné, Laurent Dusseau, M. Dumas, J.-m. Palau, B. Barelaud, J.-l. Decossas, Frédéric WrobelAbstract:The aim of this work is to validate the results of the Monte Carlo recoil energy determination nuclear physics code used to determine the deposited energy in a Silicon volume taking into account the probabilistic approach of the physical phenomenon. A Silicon Sensor has been used to measure the deposited energy spectrum after an irradiation with a neutron source. The experimental results were then compared with the one obtained by Monte Carlo simulations in the same Silicon volume. Experiments and simulations are shown to be in good agreement in the field of interest for soft error rate evaluation that means for deposited energy range leading to memory point upsets in static random access memory.
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Measurement of the Energy Depositions in a Silicon Volume by 14 MeV Neutrons
IEEE Transactions on Nuclear Science, 2006Co-Authors: H. Chabane, J.-r. Vaille, Laurent Dusseau, B. Barelaud, J.-l. Decossas, Frédéric Wrobel, Y. Calzavara, P. J. Mcnulty, P. Garcia, J. BochAbstract:The aim of this work is to validate experimentally the results of the Monte Carlo Recoil Energy Determination (MC-RED) nuclear physics code used to determine the deposited energy in a Silicon volume taking into account the probabilistic approach of the physical phenomenon. A Silicon Sensor has been used to measure the deposited energy spectrum after an irradiation with a 14 MeV neutron source. Neutrons of 14 MeV were produced by the SAMES accelerator of the Valduc CEA research center. The experimental results were compared with the one obtained by the MC-RED code in the same Silicon volume. To compare experiment and simulations, it requires that the complete neutron field be specified. We have to take into account the facility cell environment. Nuclear simulations were performed with the MCNP code to determine with accuracy the energy spectra of neutrons and gamma rays produced by this facility on the Sensor. It is shown that the contribution of secondary neutrons is not negligible
H. Steininger - One of the best experts on this subject based on the ideXlab platform.
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experimental study of different Silicon Sensor options for the upgrade of the cms outer tracker
Journal of Instrumentation, 2020Co-Authors: W. Adam, V. Hinger, D. Blöch, T. Bergauer, E. Brondolin, M. Dragicevic, R. Frühwirth, H. Steininger, W Treberertreberspurg, W BeaumontAbstract:During the high-luminosity phase of the LHC (HL-LHC), planned to start in 2027, the accelerator is expected to deliver an instantaneous peak luminosity of up to 7.5×10$^{34}$ cm$^{-2}$ s$^{-1}$. A total integrated luminosity of 0300 or even 0400 fb$^{-1}$ is foreseen to be delivered to the general purpose detectors ATLAS and CMS over a decade, thereby increasing the discovery potential of the LHC experiments significantly. The CMS detector will undergo a major upgrade for the HL-LHC, with entirely new tracking detectors consisting of an Outer Tracker and Inner Tracker. However, the new tracking system will be exposed to a significantly higher radiation than the current tracker, requiring new radiation-hard Sensors. CMS initiated an extensive irradiation and measurement campaign starting in 2009 to systematically compare the properties of different Silicon materials and design choices for the Outer Tracker Sensors. Several test structures and Sensors were designed and implemented on 18 different combinations of wafer materials, thicknesses, and production technologies. The devices were electrically characterized before and after irradiation with neutrons, and with protons of different energies, with fluences corresponding to those expected at different radii of the CMS Outer Tracker after 0300 fb$^{-1}$. The tests performed include studies with β sources, lasers, and beam scans. This paper compares the performance of different options for the HL-LHC Silicon Sensors with a focus on Silicon bulk material and thickness.
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Test beam demonstration of Silicon microstrip modules with transverse momentum discrimination for the future CMS tracking detector
JINST, 2018Co-Authors: W. Adam, T. Bergauer, E. Brondolin, M. Dragicevic, M. Friedl, R. Frühwirth, M. Hoch, J. Hrubec, A. König, H. SteiningerAbstract:A new CMS Tracker is under development for operation at the High Luminosity LHC from 2026 onwards. It includes an outer tracker based on dedicated modules that will reconstruct short track segments, called stubs, using spatially coincident clusters in two closely spaced Silicon Sensor layers. These modules allow the rejection of low transverse momentum track hits and reduce the data volume before transmission to the first level trigger. The inclusion of tracking information in the trigger decision is essential to limit the first level trigger accept rate. A customized front-end readout chip, the CMS Binary Chip (CBC), containing stub finding logic has been designed for this purpose. A prototype module, equipped with the CBC chip, has been constructed and operated for the first time in a 4 GeemVem/emc positron beam at DESY. The behaviour of the stub finding was studied for different angles of beam incidence on a module, which allows an estimate of the sensitivity to transverse momentum within the future CMS detector. A sharp transverse momentum threshold around 2 emVem/emc was demonstrated, which meets the requirement to reject a large fraction of low momentum tracks present in the LHC environment on-detector. This is the first realistic demonstration of a Silicon tracking module that is able to select data, based on the particle's transverse momentum, for use in a first level trigger at the LHC . The results from this test are described here.
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P-Type Silicon Strip Sensors for the new CMS Tracker at HL-LHC
JINST, 2017Co-Authors: W. Adam, T. Bergauer, E. Brondolin, M. Dragicevic, M. Friedl, R. Frühwirth, M. Hoch, J. Hrubec, A. König, H. SteiningerAbstract:The upgrade of the LHC to the High-Luminosity LHC (HL-LHC) is expected to increase the LHC design luminosity by an order of magnitude. This will require Silicon tracking detectors with a significantly higher radiation hardness. The CMS Tracker Collaboration has conducted an irradiation and measurement campaign to identify suitable Silicon Sensor materials and strip designs for the future outer tracker at the CMS experiment. Based on these results, the collaboration has chosen to use n-in-p type Silicon Sensors and focus further investigations on the optimization of that Sensor type. This paper describes the main measurement results and conclusions that motivated this decision.