The Experts below are selected from a list of 162432 Experts worldwide ranked by ideXlab platform
Ruixing Ding - One of the best experts on this subject based on the ideXlab platform.
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effect of exogenous Silicon Si on h atpase activity phospholipids and fluidity of plasma membrane in leaves of salt stressed barley hordeum vulgare l
Environmental and Experimental Botany, 2006Co-Authors: Yongchao Liang, Wenhua Zhang, Qin Chen, Youliang Liu, Ruixing DingAbstract:Abstract Silicon (Si) is generally conSidered a beneficial element for the growth of higher plants, especially for those grown under stressed environments. Recently, the mitigating role of Si in salt stress has received worldwide attention. However, its mechanisms involved remain poorly understood. We studied the effects of Si on plasma membrane fluidity, phospholipids and H + -ATPase activity and reduced glutathione (GSH) concentration with two contrasting barley cultivars differing in their salt tolerance. The results showed that plasma membrane H + -ATPase activity decreased in leaves of plants treated with 120 mM NaCl, and this decrease was more obvious in salt-senSitive cultivar (Kepin No. 7) than in salt-tolerant cultivar (Jian 4). Under NaCl stress, plasma membrane fluidity decreased, and the ratio of phospholipids to proteins in plasma membrane veSicles increased. GSH concentration decreased in leaves of plants exposed to 120 mM NaCl in salt-senSitive cultivar (but not in salt-tolerant cultivar). IncluSion of 1.0 mM Si to the salt treatment increased plasma membrane H + -ATPase activity in both cultivars as compared with the plants treated with 120 mM NaCl only. The addition of Si to salt treatment was also found to recover membrane fluidity to control (neither NaCl nor Si added) level, and decrease the ratio of phospholipids to protein. Furthermore, GSH concentration in leaves of salt-treated plants was increased by addition of Si. It is suggested that Si maintain the optimal membrane fluidity and increase GSH concentration, which contributes to reducing oxidative damage to enzymes induced by active oxygen species and enhances plasma membrane H + -ATPase activity under NaCl stress.
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exogenous Silicon Si increases antioxidant enzyme activity and reduces lipid peroxidation in roots of salt stressed barley hordeum vulgare l
Journal of Plant Physiology, 2003Co-Authors: Yongchao Liang, Qian Chen, Wenhua Zhang, Ruixing DingAbstract:Summary Two contrasting barley ( Hordeum vulgare L.) cultivars, i.e. Kepin No. 7 (salt senSitive) and Jian 4 (salt tolerant), were grown hydroponically to study the effect of exogenous Silicon (Si) on time dependent changes of the activities of major antioxidant enzymes and of lipid peroxidation in roots under salt stress. Enzymes included: superoxide dismutase (SOD), peroxidase (POD), catalase (CAT) and glutathione reductase (GR). Three treatments with three replicates were investigated conSisting of a control (basal nutrients with neither NaCl nor Si added), 120 mmol/L −1 NaCl, and 120 mmol/L −1 NaCl +1.0 mmol/L −1 Si. Plant roots were harvested 2, 4 and 6 days after treatment and assayed for activities of the antioxidant enzymes and the concentrations of reduced glutathione (GSH) and malondialdehyde (MDA), and electrolytic leakage percentage (ELP). The activities of SOD, POD and CAT in roots of salt-stressed plants were Significantly stimulated at Day 2 compared to control plants, but conSiderably decreased at Day 4 and onward. GR activity in roots of salt-stressed plants remained unchanged at Day 2, but Significantly decreased at Day 4 and onward. However, exogenous Si Significantly enhanced these enzyme activities in roots of salt-stressed plants compared to Si-deprived salt treatments. This Si effect was time-dependent and became stronger as the experiments continued. The tendency of change in the activities of antioxidant enzymes and the concentration of GSH coincided with the concentration of MDA, the end product of lipid peroxidation, and the ELP. Higher activities of antioxidant enzymes, and higher concentration of GSH, but lower concentration of MDA and lower ELP were noted in cultivar Jian 4 compared to Kepin No. 7, implying genotypic differences with Jian 4 being less susceptible to stress-dependent membrane lipid peroxidation. The effects of Si-enhanced salt tolerance are discussed with respect to cell membrane integrity, stability and function in barley.
Masanobu Miyao - One of the best experts on this subject based on the ideXlab platform.
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electrical injection and detection of spin polarized electrons in Silicon through an fe3Si Si schottky tunnel barrier
Applied Physics Letters, 2009Co-Authors: Y Ando, K Hamaya, Kenji Kasahara, Y Kishi, Koji Ueda, Kentarou Sawano, Taizoh Sadoh, Masanobu MiyaoAbstract:We demonstrate electrical injection and detection of spin-polarized electrons in Silicon (Si) uSing epitaxially grown Fe3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a δ-doped n+-Si layer (∼1019 cm−3) near the interface between a ferromagnetic Fe3Si contact and a Si channel (∼1015 cm−3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe3Si/Si Schottky diodes. USing laterally fabricated four-probe geometries with the modified Fe3Si/Si contacts, we detect nonlocal output Signals that originate from the spin accumulation in a Si channel at low temperatures.
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electrical injection and detection of spin polarized electrons in Silicon through an fe_3Si Si schottky tunnel barrier
arXiv: Mesoscale and Nanoscale Physics, 2009Co-Authors: Y Ando, K Hamaya, Kenji Kasahara, Y Kishi, Koji Ueda, Kentarou Sawano, Taizoh Sadoh, Masanobu MiyaoAbstract:We demonstrate electrical injection and detection of spin-polarized electrons in Silicon (Si) uSing epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the interface between a ferromagnetic Fe_3Si/Si contact and a Si channel (~ 10^15 cm^-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe_3Si/Si Schottky diodes. USing laterally fabricated four-probe geometries with the modified Fe_3Si/Si contacts, we detect nonlocal output Signals which originate from the spin accumulation in a Si channel at low temperatures.
Yongchao Liang - One of the best experts on this subject based on the ideXlab platform.
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effect of exogenous Silicon Si on h atpase activity phospholipids and fluidity of plasma membrane in leaves of salt stressed barley hordeum vulgare l
Environmental and Experimental Botany, 2006Co-Authors: Yongchao Liang, Wenhua Zhang, Qin Chen, Youliang Liu, Ruixing DingAbstract:Abstract Silicon (Si) is generally conSidered a beneficial element for the growth of higher plants, especially for those grown under stressed environments. Recently, the mitigating role of Si in salt stress has received worldwide attention. However, its mechanisms involved remain poorly understood. We studied the effects of Si on plasma membrane fluidity, phospholipids and H + -ATPase activity and reduced glutathione (GSH) concentration with two contrasting barley cultivars differing in their salt tolerance. The results showed that plasma membrane H + -ATPase activity decreased in leaves of plants treated with 120 mM NaCl, and this decrease was more obvious in salt-senSitive cultivar (Kepin No. 7) than in salt-tolerant cultivar (Jian 4). Under NaCl stress, plasma membrane fluidity decreased, and the ratio of phospholipids to proteins in plasma membrane veSicles increased. GSH concentration decreased in leaves of plants exposed to 120 mM NaCl in salt-senSitive cultivar (but not in salt-tolerant cultivar). IncluSion of 1.0 mM Si to the salt treatment increased plasma membrane H + -ATPase activity in both cultivars as compared with the plants treated with 120 mM NaCl only. The addition of Si to salt treatment was also found to recover membrane fluidity to control (neither NaCl nor Si added) level, and decrease the ratio of phospholipids to protein. Furthermore, GSH concentration in leaves of salt-treated plants was increased by addition of Si. It is suggested that Si maintain the optimal membrane fluidity and increase GSH concentration, which contributes to reducing oxidative damage to enzymes induced by active oxygen species and enhances plasma membrane H + -ATPase activity under NaCl stress.
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exogenous Silicon Si increases antioxidant enzyme activity and reduces lipid peroxidation in roots of salt stressed barley hordeum vulgare l
Journal of Plant Physiology, 2003Co-Authors: Yongchao Liang, Qian Chen, Wenhua Zhang, Ruixing DingAbstract:Summary Two contrasting barley ( Hordeum vulgare L.) cultivars, i.e. Kepin No. 7 (salt senSitive) and Jian 4 (salt tolerant), were grown hydroponically to study the effect of exogenous Silicon (Si) on time dependent changes of the activities of major antioxidant enzymes and of lipid peroxidation in roots under salt stress. Enzymes included: superoxide dismutase (SOD), peroxidase (POD), catalase (CAT) and glutathione reductase (GR). Three treatments with three replicates were investigated conSisting of a control (basal nutrients with neither NaCl nor Si added), 120 mmol/L −1 NaCl, and 120 mmol/L −1 NaCl +1.0 mmol/L −1 Si. Plant roots were harvested 2, 4 and 6 days after treatment and assayed for activities of the antioxidant enzymes and the concentrations of reduced glutathione (GSH) and malondialdehyde (MDA), and electrolytic leakage percentage (ELP). The activities of SOD, POD and CAT in roots of salt-stressed plants were Significantly stimulated at Day 2 compared to control plants, but conSiderably decreased at Day 4 and onward. GR activity in roots of salt-stressed plants remained unchanged at Day 2, but Significantly decreased at Day 4 and onward. However, exogenous Si Significantly enhanced these enzyme activities in roots of salt-stressed plants compared to Si-deprived salt treatments. This Si effect was time-dependent and became stronger as the experiments continued. The tendency of change in the activities of antioxidant enzymes and the concentration of GSH coincided with the concentration of MDA, the end product of lipid peroxidation, and the ELP. Higher activities of antioxidant enzymes, and higher concentration of GSH, but lower concentration of MDA and lower ELP were noted in cultivar Jian 4 compared to Kepin No. 7, implying genotypic differences with Jian 4 being less susceptible to stress-dependent membrane lipid peroxidation. The effects of Si-enhanced salt tolerance are discussed with respect to cell membrane integrity, stability and function in barley.
Silke Christiansen - One of the best experts on this subject based on the ideXlab platform.
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nanowire arrays in multicrystalline Silicon thin films on glass a promiSing material for research and applications in nanotechnology
Nano Letters, 2012Co-Authors: Sebastian W Schmitt, Florian Schechtel, Daniel Amkreutz, Muhammad Y Bashouti, Sanjay K Srivastava, Bjorn Hoffmann, Christel Dieker, Erdmann Spiecker, Bernd Rech, Silke ChristiansenAbstract:Silicon nanowires (SiNW) were formed on large grained, electron-beam crystallized Silicon (Si) thin films of only ∼6 μm thickness on glass uSing nanosphere lithography (NSL) in combination with rea...
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roughness of Silicon nanowire Sidewalls and room temperature photoluminescence
Physical Review B, 2010Co-Authors: Vladimir Sivakov, Felix Voigt, A Berger, G H Bauer, Silke ChristiansenAbstract:Single crystalline Silicon Si wafers. Optical characterization of these SiNWs by PLcombined with structural characterization by transmisSion and scanning electron microscopy strongly suggestthat the viSible PL at room temperature results from the rough SiNW Sidewall structure that is composed ofnanoscale features in which quantum confinement effects may occur.DOI: 10.1103/PhysRevB.82.125446 PACS number s : 78.55.Ap, 62.23.Hj, 68.37.Hk, 68.37.Og
Y Ando - One of the best experts on this subject based on the ideXlab platform.
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electrical injection and detection of spin polarized electrons in Silicon through an fe3Si Si schottky tunnel barrier
Applied Physics Letters, 2009Co-Authors: Y Ando, K Hamaya, Kenji Kasahara, Y Kishi, Koji Ueda, Kentarou Sawano, Taizoh Sadoh, Masanobu MiyaoAbstract:We demonstrate electrical injection and detection of spin-polarized electrons in Silicon (Si) uSing epitaxially grown Fe3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a δ-doped n+-Si layer (∼1019 cm−3) near the interface between a ferromagnetic Fe3Si contact and a Si channel (∼1015 cm−3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe3Si/Si Schottky diodes. USing laterally fabricated four-probe geometries with the modified Fe3Si/Si contacts, we detect nonlocal output Signals that originate from the spin accumulation in a Si channel at low temperatures.
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electrical injection and detection of spin polarized electrons in Silicon through an fe_3Si Si schottky tunnel barrier
arXiv: Mesoscale and Nanoscale Physics, 2009Co-Authors: Y Ando, K Hamaya, Kenji Kasahara, Y Kishi, Koji Ueda, Kentarou Sawano, Taizoh Sadoh, Masanobu MiyaoAbstract:We demonstrate electrical injection and detection of spin-polarized electrons in Silicon (Si) uSing epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the interface between a ferromagnetic Fe_3Si/Si contact and a Si channel (~ 10^15 cm^-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe_3Si/Si Schottky diodes. USing laterally fabricated four-probe geometries with the modified Fe_3Si/Si contacts, we detect nonlocal output Signals which originate from the spin accumulation in a Si channel at low temperatures.