The Experts below are selected from a list of 321 Experts worldwide ranked by ideXlab platform
Hidefumi Asano - One of the best experts on this subject based on the ideXlab platform.
-
High-temperature and high-voltage characteristics of Cu/diamond Schottky Diodes
Diamond and Related Materials, 2015Co-Authors: Kenji Ueda, K. Kawamoto, Hidefumi AsanoAbstract:Abstract High-temperature and high-voltage characteristics of Cu/diamond Schottky Diodes were investigated. Cu Schottky Diodes showed clear rectification up to ~ 700 °C. The current–voltage characteristics of the Diodes at 400 °C were almost unchanged after keeping them for 30 h, implying they have high stability at ~ 400 °C. The Diodes showed specific on-resistance and breakdown voltage of 83.4 mΩ cm2 and 713 V at 400 °C, respectively, which are comparable to reported highest values for diamond Schottky Diodes and close to the theoretical limit for 6H-SiC at several hundred °C. These results indicate that Cu/diamond Schottky Diodes are promising for high-temperature power applications.
-
High-temperature characteristics and stability of Cu/diamond Schottky Diodes
Japanese Journal of Applied Physics, 2014Co-Authors: Kenji Ueda, K. Kawamoto, Hidefumi AsanoAbstract:The high-temperature electrical characteristics and stability of Cu/diamond Schottky Diodes were examined and compared with those of Schottky Diodes using Ag and Ni electrodes. The Cu/diamond Schottky Diodes exhibited clear rectification up to 700 °C, indicating that high-temperature operation is possible using these Diodes. This is thought to be due to their large Schottky barrier height of ~1.6 eV. The high-temperature stability of the Cu/diamond Schottky Diodes was better than that for Diodes using Ag or Ni, probably because of less interfacial reaction or interdiffusion between the Cu and diamond.
-
High-temperature characteristics of Ag and Ni/diamond Schottky Diodes
Diamond and Related Materials, 2013Co-Authors: Kenji Ueda, K. Kawamoto, T. Soumiya, Hidefumi AsanoAbstract:Abstract The high-temperature characteristics of diamond Schottky Diodes fabricated using Ag or Ni on in-situ boron-doped diamond were examined. Up to 600 °C, Ag Schottky Diodes exhibited a high rectification ratio of the order of 10 4 . Even at ~ 750 °C, their rectification ratio was about 10, indicating that diamond field effect transistors with Ag Schottky Diodes can operate at this temperature. In contrast, Ni Schottky Diodes did not show clear rectification above 600 °C. An analysis of the I – V curves indicated that the Ag Schottky Diodes have a higher rectification ratio than the Ni Schottky Diodes at high temperatures due to their higher barrier heights ( ϕ B = ~ 2.0 and ~ 0.7 eV for Ag and Ni, respectively).
C. Jaussaud - One of the best experts on this subject based on the ideXlab platform.
-
Low frequency noise in silicon carbide Schottky Diodes
Diamond and Related Materials, 1997Co-Authors: Lorena Anghel, T. Ouisse, T. Billon, P. Lassagne, C. JaussaudAbstract:The excess low frequency noise of silicon carbide Schottky Diodes has been systematically measured on n-type SiC devices with Ti gates. The noise results have been related to general properties such as barrier height and doping level. The 1/f noise closely follows a model proposed in [T.G.M. Kleinpenning, Solid State Electron. 22 (1979) 121-128] and is thus most probably due to mobility fluctuations in the depletion region of the Schottky barrier.
A J Steckl - One of the best experts on this subject based on the ideXlab platform.
-
high voltage ni and pt sic Schottky Diodes utilizing metal field plate termination
IEEE Transactions on Electron Devices, 1999Co-Authors: V Saxena, A J StecklAbstract:We have fabricated 1 kV 4H and 6H SiC Schottky Diodes utilizing a metal-oxide overlap structure for electric field termination. This simple structure when used with a high barrier height metal such as Ni has consistently given us good yield of Schottky Diodes with breakdown voltages in excess of 60% of the theoretically calculated value. This paper presents the design considerations, the fabrication procedure, and characterization results for these 1 kV Ni-SiC Schottky Diodes. Comparison to similarly fabricated Pt-SiC Schottky Diodes is reported. The Ni-SiC ohmic contact formation has been studied using Auger electron spectroscopy and X-ray diffraction. The characterization study includes measurements of current-voltage (I-V) temperature and capacitance-voltage (C-V) temperature characteristics. The high-temperature performance of these Diodes has also been investigated. The Diodes show good rectifying behavior with ON/OFF current ratios, ranging from 10/sup 6/ to 10 at 27/spl deg/C and in excess of 10/sup 6/ up to 300/spl deg/C.
Antti V. Räisänen - One of the best experts on this subject based on the ideXlab platform.
-
Experimental investigation of traps in THz Schottky Diodes
2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016Co-Authors: Subash Khanal, Tero Kiuru, Juha Mallat, Heikki Seppa, P. Piironen, Antti V. RäisänenAbstract:In this paper, indications of charge trapping in THz Schottky Diodes are investigated with various measurement techniques including current-voltage, capacitance and low-frequency noise measurements. GaAs Diodes from various manufacturers are tested. For comparison purposes, results for two different diode samples are presented. Correlation between different measurement techniques is observed which indicate the presence of traps in measured Schottky diode samples. I-V and C-V measurements show some trapping behavior. However, it is also important to observe frequency dependency of the diode capacitance and low-frequency noise properties to closely monitor the charge trapping in small area Schottky Diodes. Diode samples are measured in on-wafer environment using a probe station.
-
Thermal Characterization of THz Schottky Diodes Using Transient Current Measurements
IEEE Transactions on Terahertz Science and Technology, 2014Co-Authors: Subash Khanal, Aik-yean Tang, Mohammad Arif Saber, Jan Stake, Tero Kiuru, Juha Mallat, Tapani Närhi, Antti V. RäisänenAbstract:This paper presents a new method for thermal characterization of THz Schottky Diodes. The method is based on the transient current behavior, and it enables the extraction of thermal resistances, thermal time-constants, and peak junction temperatures of THz Schottky Diodes. Many typical challenges in thermal characterization of small-area diode devices, particularly those related to self-heating and electrical transients, are either avoided or mitigated. The method is validated with measurements of commercially available single-anode Schottky varactor Diodes. A verification routine is performed to ensure the accuracy of the measurement setup, and the characterization results are compared against an in-house measurement-based method and against simulation results of two commercial 3-D thermal simulators. For example, characterization result for the total thermal resistance of a Schottky diode with an anode area of 9 μm2 is within 10% of the average value of 4020 K/W when using all four approaches. The new method can be used to measure small diode devices with thermal time constants down to about 300 ns with the measurement setup described in the paper.
Stephen B Cronin - One of the best experts on this subject based on the ideXlab platform.
-
graphene silicon Schottky Diodes
Nano Letters, 2011Co-Authors: Chunchung Chen, Mehmet Aykol, Chiachi Chang, A F J Levi, Stephen B CroninAbstract:We have fabricated graphene-silicon Schottky Diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current–voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I–V characteristics measured at 100, 300, and 400 K indicate that temperature strongly influences the ideality factor of graphene–silicon Schottky Diodes. The ideality factor, however, does not depend strongly on the number of graphene layers. The optical transparency of the thin graphene layer allows the underlying silicon substrate to absorb incident laser light and generate a photocurrent. Spatially resolved photocurrent measurements reveal the importance of inhomogeneity and series resistance in the devices.
