The Experts below are selected from a list of 8883 Experts worldwide ranked by ideXlab platform
Per Delsing - One of the best experts on this subject based on the ideXlab platform.
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An ultrasensitive radio-frequency Single-Electron Transistor working up to 4.2 K
Journal of Applied Physics, 2006Co-Authors: Henrik Brenning, Timothy Duty, S. Kafanov, Sergey Kubatkin, Per DelsingAbstract:We present the measurement of a radio-frequency Single-Electron Transistor that displays a very high charge sensitivity of 1.9 μ e ∕ Hz at 4.2 K . At 40 mK , the charge sensitivity is 0.9 and 1.0 μ e ∕ Hz in the superconducting and normal state, respectively. The sensitivity was measured as a function of radio frequency amplitude at three different temperatures; 40 mK , 1.8, and 4.2 K .
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Single-Electron Transistor backaction on the Single-Electron box
Physical Review B, 2005Co-Authors: Benjamin Turek, Per Delsing, Konrad Lehnert, Aashish A. Clerk, David Gunnarsson, K. Bladh, Robert J. SchoelkopfAbstract:We report an experimental observation of the backaction of a Single-Electron Transistor (SET) measuring the Coulomb staircase of a Single-Electron box. As current flows through the SET, the charge state of the SET island fluctuates. These fluctuations capacitively couple to the box and cause changes in the position, width, and asymmetry of the Coulomb staircase. A sequential tunneling model accurately recreates these effects, confirming this mechanism of the backaction of a SET. This is a first step toward understanding the effects of quantum measurement on solid-state qubits.
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Noise performance of the radio-frequency Single-Electron Transistor
Journal of Applied Physics, 2004Co-Authors: Leif Roschier, Per Delsing, Konrad Lehnert, K. Bladh, Pertti Hakonen, Lafe Spietz, Robert J. SchoelkopfAbstract:We have analyzed a radio-frequency Single-Electron-Transistor (RF-SET) circuit that includes a high-Electron-mobility-Transistor (HEMT) amplifier, coupled to the Single-Electron-Transistor (SET) via an impedance transformer. We consider how power is transferred between different components of the circuit, model noise components, and analyze the operating conditions of practical importance. The results are compared with experimental data on SETs. Good agreement is obtained between our noise model and the experimental results. Our analysis shows, also, that the biggest improvement to the present RF-SETs will be achieved by increasing the charging energy and by lowering the HEMT amplifier noise contribution.
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radio frequency Single Electron Transistor toward the shot noise limit
Applied Physics Letters, 2001Co-Authors: A Aassime, Per Delsing, David Gunnarsson, K. Bladh, R J SchoelkopfAbstract:We have fabricated an aluminum Single-Electron Transistor and characterized it at frequencies up to 10 MHz by measuring the reflected signal from a resonant tank in which the Transistor is embedded. We measured the charge sensitivity of this radio-frequency Single-Electron Transistor to be 3.2×10−6 e/Hz, which corresponds to the uncoupled energy sensitivity of 4.8 ℏ. Our measurements indicate that with further improvements, the radio-frequency Single-Electron Transistor could reach the shot-noise limit estimated to be about 1 ℏ.
Andrew J. Ferguson - One of the best experts on this subject based on the ideXlab platform.
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Impedance of the Single Electron Transistor at radio-frequencies
New Journal of Physics, 2011Co-Authors: Chiara Ciccarelli, Andrew J. FergusonAbstract:We experimentally characterise the impedance of a Single Electron Transistor (SET) at an excitation frequency comparable to the Electron tunnel rate. Differently from usual rf-SET operations, the excitation signal is applied to the gate of the device. At zero source-drain bias the Single Electron Transistor displays both resistive (Sisyphus resistance) and reactive (tunnelling capacitance) components to its impedance. We study the bias dependence of the complex impedance, investigating its response as the Electron tunnel rate becomes large with respect to the driving frequency. The experimental data are compared to values calculated from a master equation model.
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impedance of the Single Electron Transistor at radio frequencies
New Journal of Physics, 2011Co-Authors: Chiara Ciccarelli, Andrew J. FergusonAbstract:We experimentally characterize the impedance of a Single-Electron Transistor (SET) at an excitation frequency comparable to the Electron tunnel rate. In contrast to usual radio-frequency-SET operations, the excitation signal is applied to the gate of the device. At zero source–drain bias, the SET displays both resistive (Sisyphus resistance) and reactive (tunnelling capacitance) components to its impedance. We study the bias dependence of the complex impedance, investigating its response as the Electron tunnel rate becomes large with respect to the driving frequency. The experimental data are compared with values calculated from a master equation model.
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a silicon radio frequency Single Electron Transistor
Applied Physics Letters, 2008Co-Authors: S J Angus, Andrew J. Ferguson, A S Dzurak, R G ClarkAbstract:We report the demonstration of a silicon radio-frequency Single Electron Transistor. The island is defined by electrostatically tunable tunnel barriers in a narrow channel field effect Transistor. Charge sensitivities of better than 10μe∕Hz are demonstrated at megahertz bandwidth. These results demonstrate that silicon may be used to fabricate fast, sensitive electrometers.
Robert J. Schoelkopf - One of the best experts on this subject based on the ideXlab platform.
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Single-Electron Transistor backaction on the Single-Electron box
Physical Review B, 2005Co-Authors: Benjamin Turek, Per Delsing, Konrad Lehnert, Aashish A. Clerk, David Gunnarsson, K. Bladh, Robert J. SchoelkopfAbstract:We report an experimental observation of the backaction of a Single-Electron Transistor (SET) measuring the Coulomb staircase of a Single-Electron box. As current flows through the SET, the charge state of the SET island fluctuates. These fluctuations capacitively couple to the box and cause changes in the position, width, and asymmetry of the Coulomb staircase. A sequential tunneling model accurately recreates these effects, confirming this mechanism of the backaction of a SET. This is a first step toward understanding the effects of quantum measurement on solid-state qubits.
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Noise performance of the radio-frequency Single-Electron Transistor
Journal of Applied Physics, 2004Co-Authors: Leif Roschier, Per Delsing, Konrad Lehnert, K. Bladh, Pertti Hakonen, Lafe Spietz, Robert J. SchoelkopfAbstract:We have analyzed a radio-frequency Single-Electron-Transistor (RF-SET) circuit that includes a high-Electron-mobility-Transistor (HEMT) amplifier, coupled to the Single-Electron-Transistor (SET) via an impedance transformer. We consider how power is transferred between different components of the circuit, model noise components, and analyze the operating conditions of practical importance. The results are compared with experimental data on SETs. Good agreement is obtained between our noise model and the experimental results. Our analysis shows, also, that the biggest improvement to the present RF-SETs will be achieved by increasing the charging energy and by lowering the HEMT amplifier noise contribution.
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Amplifying quantum signals with the Single-Electron Transistor
Nature, 2000Co-Authors: Michel H. Devoret, Robert J. SchoelkopfAbstract:Transistors have continuously reduced in size and increased in switching speed since their invention in 1947. The exponential pace of Transistor evolution has led to a revolution in information acquisition, processing and communication technologies. And reigning over most digital applications is a Single device structure — the field-effect Transistor (FET). But as device dimensions approach the nanometre scale, quantum effects become increasingly important for device operation, and conceptually new Transistor structures may need to be adopted. A notable example of such a structure is the Single-Electron Transistor, or SET1–4 . Although it is unlikely that SETs will replace FETs in conventional Electronics, they should prove useful in ultra-low-noise analog applications. Moreover, because it is not affected by the same technological limitations as the FET, the SET can approach closely the quantum limit of sensitivity. It might also be a useful read-out device for a solid-state quantum computer.
K. W. West - One of the best experts on this subject based on the ideXlab platform.
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Single Electron capacitance spectroscopy of vertical quantum dots using a Single Electron Transistor
Applied Physics Letters, 1999Co-Authors: M. Koltonyuk, D. Berman, Nikolai B. Zhitenev, Raymond Ashoori, N. Pfeiffer, K. W. WestAbstract:We have incorporated an aluminum Single Electron Transistor (SET) directly on top of a vertical quantum dot, enabling the use of the SET as an electrometer that is extremely responsive to the motion of charge into and out of the dot. Charge induced on the SET central island from Single Electron additions to the dot modulates the SET output, and we describe two methods for demodulation that permit quantitative extraction of the quantum dot capacitance signal. The two methods produce closely similar results for the determined Single Electron capacitance peaks.
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scanning Single Electron Transistor microscopy imaging individual charges
Physica E-low-dimensional Systems & Nanostructures, 1998Co-Authors: M J Yoo, T A Fulton, H F Hess, R L Willett, L N Dunkleberger, R J Chichester, Loren Pfeiffer, K. W. WestAbstract:Abstract We describe the Single-Electron Transistor scanning electrometer (SETSE), a novel scanned probe microscope capable of mapping static electric fields and charges with submicron (100 nm) spatial resolution and fractional Electron charge sensitivity (0.01e). The active sensing element of the SETSE is a Single-Electron Transistor fabricated at the end of a sharp glass tip. Images of the surface electric fields of a GaAs/AlGaAs heterostructure sample taken before and after brief exposures to light show individual photoionized charge sites as well as 100 nm length scale fluctuations in the dopant and surface charge distribution. We also describe SETSE images and measurements of depleted regions, local capacitance, band bending, and work functions at submicron length scales on the surface of this model semiconductor device.
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scanning Single Electron Transistor microscopy imaging individual charges
Science, 1997Co-Authors: M J Yoo, T A Fulton, H F Hess, R L Willett, L N Dunkleberger, R J Chichester, Loren Pfeiffer, K. W. WestAbstract:A Single-Electron Transistor scanning electrometer (SETSE)—a scanned probe microscope capable of mapping static electric fields and charges with 100-nanometer spatial resolution and a charge sensitivity of a small fraction of an Electron—has been developed. The active sensing element of the SETSE, a Single-Electron Transistor fabricated at the end of a sharp glass tip, is scanned in close proximity across the sample surface. Images of the surface electric fields of a GaAs/AlxGa1−xAs heterostructure sample show individual photo-ionized charge sites and fluctuations in the dopant and surface-charge distribution on a length scale of 100 nanometers. The SETSE has been used to image and measure depleted regions, local capacitance, band bending, and contact potentials at submicrometer length scales on the surface of this semiconductor sample.
R G Clark - One of the best experts on this subject based on the ideXlab platform.
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Electron tunnel rates in a donor silicon Single Electron Transistor hybrid
Physical Review B, 2010Co-Authors: Hans Huebl, R G Clark, Christopher Nugroho, Andrea Morello, C C Escott, M A Eriksson, Changyi Yang, D N Jamieson, A S DzurakAbstract:We investigate a hybrid structure consisting of a small number of implanted $^{31}\text{P}$ atoms close to a gate-induced silicon Single Electron Transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby centers, turning from the off state to the conducting state when the charge configuration is changed. We present a method to measure fast Electron tunnel rates between donors and the SiSET island, using a pulsed voltage scheme and low-bandwidth current detection. The experimental findings are quantitatively discussed using a rate equation model, enabling the extraction of the capture and emission rates.
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a silicon radio frequency Single Electron Transistor
Applied Physics Letters, 2008Co-Authors: S J Angus, Andrew J. Ferguson, A S Dzurak, R G ClarkAbstract:We report the demonstration of a silicon radio-frequency Single Electron Transistor. The island is defined by electrostatically tunable tunnel barriers in a narrow channel field effect Transistor. Charge sensitivities of better than 10μe∕Hz are demonstrated at megahertz bandwidth. These results demonstrate that silicon may be used to fabricate fast, sensitive electrometers.