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R. Nandi - One of the best experts on this subject based on the ideXlab platform.

  • a Single Resistor tunable grounded capacitor dual input differentiator
    Circuits and Systems, 2015
    Co-Authors: Koushick Mathur, Palaniandavar Venkateswaran, R. Nandi
    Abstract:

    A new current feedback amplifier (CFA) based dual-input differentiator (DID) design with grounded capacitor is presented; its time constant (τo) is independently tunable by a Single Resistor. The proposed circuit yields a true DID function with ideal CFA devices. Analysis with nonideal devices having parasitic capacitance (Cp) shows extremely low but finite phase error (θe); suitable design θe could be minimized significantly. The design is practically active-insensitive relative to port mismatch errors (e) of the active element. An allpass phase shifter circuit implementation is derived with slight modification of the differentiator. Satisfactory experimental results had been verified on typical wave processing and phase-selective filter design applications.

  • Active-R tunable integrators using a current differencing buffered amplifier
    International Journal of Electronics, 2010
    Co-Authors: R. Nandi
    Abstract:

    Some new active-R integrator realisation schemes using the transadmittance pole of a current differencing buffered amplifier (CDBA) element are presented. The time constant (τ) is tunable by a Single Resistor whereas the integrator quality factor (Q) can be made very large with suitable realisability design. The active sensitivities of τ and Q are extremely low. As an application, a variable frequency sinusoid oscillator utilising the integrators in a loop has also been designed. Practical results using the hardware implementation and by PSPICE macromodel simulation are included for a frequency range of 1 MHz 

  • dual input Single tunable integrators and differentiators using current feedback amplifier
    International Journal of Electronics, 2003
    Co-Authors: Palaniandavar Venkateswaran, Rajendra Kumar Nagaria, Salil Kumar Sanyal, R. Nandi
    Abstract:

    Some new active-RC integrator and differentiator circuits using the currentfeedback amplifier (CFA) device are proposed; both current-mode and voltagemode versions are reported. The novelties of the designs are dual-input differential capability, Single-Resistor tunability at low sensitivities and realizability of the pole/zero at the origin. Experimental results are included.

  • Current mode tunable low-frequency oscillators using current conveyors
    Frequenz, 1996
    Co-Authors: R. Nandi
    Abstract:

    Two new Single-Resistor tunable current mode sinusoid oscillators suitable for low-frequency generation using the second generation current conveyor (CC II) elements are proposed. The modified design equations assuming nonideal CC IIs have been derived which indicate that the oscillation frequency (ω 0 ) is practically active-insensitive. Additional lowpass/bandpass filter characteristics may be obtained in both the circuits.

  • Precise frequency compensation of tunable active-RC integrator
    Electronics Letters, 1991
    Co-Authors: R. Nandi, U.c. Sarker
    Abstract:

    A grounded-capacitor Single-Resistor tunable two-operational amplifier (OA) noninverting integrator network realisation and the compensation design for its quality-factor (Q) at high frequency are presented. The novelty of the proposed design is that it is independent of the tuning of the time constant (TO) and precise high quality (Q → ∞) performance can be derived up to the bandwidth of the OA devices.

Worapong Tangsrirat - One of the best experts on this subject based on the ideXlab platform.

  • Floating Series RC Impedance Simulator Using Single FB-VDBA
    2020 8th International Electrical Engineering Congress (iEECON), 2020
    Co-Authors: Jirapun Pimpol, Orapin Channumsin, Worapong Tangsrirat
    Abstract:

    This article introduces a floating series RC impedance simulator circuit employing a Single fully-balanced voltage differencing buffered amplifier (FB-VDBA), as an active element. The presented simulation includes only one FB-VDBA, a Single Resistor, and a Single capacitor. The simulated equivalent series resistance and capacitance values are alterable via the DC biasing current of the FB-VDBA. As a demonstrative application, the presented floating series RC impedance is applied to configuration a 2nd order high-pass filter. To evaluate the correctness operation of the presented circuit and its application, the simulation results based upon TSMC 0.25-µm CMOS technology are also contained.

  • CDBA-based sinusoidal quadrature oscillator with current controlled amplitude
    2010 10th International Symposium on Communications and Information Technologies, 2010
    Co-Authors: Danucha Prasertsom, Worapong Tangsrirat
    Abstract:

    This paper describes a sinusoidal quadrature oscillator circuit using current differencing buffered amplifiers (CDBAs), that features a Single-resistance-controlled frequency and current amplitude control. The proposed circuit contains two CDBAs, three Resistors, and two grounded capacitors. The oscillation condition (OC) and the oscillation frequency (ω o ) of the circuit are independently controlled by a Single Resistor, whereas the oscillation amplitude is electronically controlled by an external DC current. Outputs of two sinusoidal voltages are shifted by 90°. The validity of the proposed circuit has been verified by hardware circuit tests using AD844 based CDBA.

  • Single-resistance-controlled quadrature oscillator using current differencing buffered amplifiers
    International Journal of Electronics, 2008
    Co-Authors: Worapong Tangsrirat, Danucha Prasertsom, T. Piyatat, Wanlop Surakampontorn
    Abstract:

    A Single-resistance-controlled quadrature oscillator circuit using current differencing buffered amplifiers (CDBAs) as active components is proposed. The proposed circuit is realised through the employment of two CDBAs, three Resistors and two grounded capacitors. Outputs of two sinusoidal with 90° phase difference are available. The oscillation condition and the oscillation frequency of the proposed quadrature oscillator can be controlled independently by a Single Resistor. In comparison with the previously reported circuits, the proposed configuration considerably reduces the number of passive elements.

  • CFOA-based Single resistance controlled quadrature oscillator
    2008 SICE Annual Conference, 2008
    Co-Authors: Pratya Mongkolwai, Tattaya Pukkalanun, T. Dumawipata, Worapong Tangsrirat
    Abstract:

    This paper presents a new Single-resistance-controlled (SRC) sinusoidal quadrature oscillator with reduce number of passive elements using only two current-feedback operational amplifiers (CFOAs). The proposed oscillator configuration comprising two CFOAs, three Resistors and two capacitors provides two sinusoidal voltage outputs in phase quadrature. The circuit has the advantage of independent control of the condition of oscillation and the oscillation frequency through a Single Resistor. In addition, both proposed circuit configurations have good active and passive sensitivity performance. PSPICE simulation results based on commercially available AD844-type CFOAs are also included, showing the excellent performance of the proposed oscillator configuration.

G. De Nunzio - One of the best experts on this subject based on the ideXlab platform.

  • A Percolative Approach to Reliability of Thin Film Interconnects and Ultra-thin Dielectrics
    VLSI Design, 2001
    Co-Authors: C. Pennetta, Gy. Trefán, Lino Reggiani, Rosella Cataldo, G. De Nunzio
    Abstract:

    Degradation of thin film interconnects and ultra-thin dielectrics is studied within a stochastic approach based on a percolation technique. The thin film is modelled as a two-dimensional random Resistor network at a given temperature and its degradation is characterized by a breaking probability of the Single Resistor. A recovery of the damage is also allowed so that a steady-state condition can be achieved. The main features of experiments are reproduced. This approach provides a unified description of degradation and failure processes in terms of physical parameters.

  • A Percolative Approach to Reliability of Thin Film Interconnects and Ultra-thin Dielectrics
    Vlsi Design, 2001
    Co-Authors: Cecilia Pennetta, Gy. Trefán, Lino Reggiani, Rosella Cataldo, G. De Nunzio
    Abstract:

    Degradation of thin film interconnects and ultra-thin dielectrics is studied within a stochastic approach based on a percolation technique. The thin film is modelled as a two-dimensional random Resistor network at a given temperature and its degradation is characterized by a breaking probability of the Single Resistor. A recovery of the damage is also allowed so that a steady-state condition can be achieved. The main features of experiments are reproduced. This approach provides a unified description of degradation and failure processes in terms of physical parameters.

  • A percolative approach to reliability of thin film interconnects and ultra-thin dielectrics
    7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), 1
    Co-Authors: Cecilia Pennetta, Gy. Trefán, Lino Reggiani, Rosella Cataldo, G. De Nunzio
    Abstract:

    We present a new percolative approach which simulates degradation towards failure of metallic or insulating thin films. The thin film is modelled as a two-dimensional random Resistor network in thermal contact with a substrate. Its degradation is characterized by a breaking probability of the Single Resistor related to the substrate temperature and to Joule heating effects. The dependence of the Single Resistor on the local temperature is taken into account as well as its thermal interaction with nearest neighbours. The failure of metallic strips and ultra-thin dielectrics are then described as a conductor-insulator (CI) and an insulator-conductor (IC) transition, respectively. A recovery of the damage competing with the degradation is introduced which accounts for healing processes and can eventually lead to a steady-state condition. This approach can model the resistance degradation of metal interconnects by electromigration phenomena and the pre-breakdown of ultrathin dielectric where stress induced leakage currents (SILC) are used to monitor the degradation. The main features of experiments are reproduced together with their statistical properties. Our approach thus provides a unified framework for studying degradation and failure in both metallic and dielectric thin films.

J. Ngarmnil - One of the best experts on this subject based on the ideXlab platform.

Hyungcheol Shin - One of the best experts on this subject based on the ideXlab platform.

  • A simple and accurate method for extracting substrate resistance of RF MOSFETs
    IEEE Electron Device Letters, 2002
    Co-Authors: Jeonghu Han, Hyungcheol Shin
    Abstract:

    In this paper, a simple and accurate method was proposed for extracting substrate resistance of an RF MOSFET, the substrate of which is represented by a Single Resistor. The extraction results from the measured network parameters are presented for various bias conditions. Excellent agreement between the results of measurements and the model for the extracted substrate resistance was obtained up to 18 GHz. Also, the resistance extracted using the proposed method was shown to give scalable results.