The Experts below are selected from a list of 1188 Experts worldwide ranked by ideXlab platform

Chen Xiao-y - One of the best experts on this subject based on the ideXlab platform.

  • Research on Small Type High-speed DC Solid State Relay
    IEEE Transactions on Power Electronics, 2014
    Co-Authors: Chen Xiao-y
    Abstract:

    A novel DC Solid State Relay(SSR) is proposed.It establishes bidirectional feedback circuit with high switching speed by using transistors and high-speed optical couplers.Furthermore,it has good hysteretic characteristic.The acting value and returning value have very large setting range.It is demonstrated that the SSR has high acting speed and has excellent hysteretic characteristic.

Wang Zhao-an - One of the best experts on this subject based on the ideXlab platform.

  • Study of the Zero-cross Solid State Relay Applied in TSC
    IEEE Transactions on Power Electronics, 2004
    Co-Authors: Wang Zhao-an
    Abstract:

    The paper introduces a way of using zero-cross Solid State Relay (SSR) to switch the reactive compen-sation capacitors in the low voltage distribution system.The process of switching on and off the capacitors using Solid State Relay is analyzed by theory and experiment in details.How to decide the parameters of Solid State Relay applied in TSC is presented by theory analysis and experiment.

H. Celiker - One of the best experts on this subject based on the ideXlab platform.

Xavier Jordà - One of the best experts on this subject based on the ideXlab platform.

  • Solid-State Relay Solutions for Induction Cooking Applications Based on Advanced Power Semiconductor Devices
    IEEE Transactions on Industrial Electronics, 2019
    Co-Authors: Manuel Hernández Fernández, Xavier Perpiñà, M. Vellvehi, Tomas Cabeza, S. Llorente, Jose Rebollo, David Sánchez, Xavier Jordà
    Abstract:

    This paper focuses on providing an improved and efficient alternative to electromechanical Relays (EMRs) in view of the growing demand characteristics for an effective power multiplexing in induction heating applications. A major analytical approach to the design and implementation of bidirectional switches (BDSs) based on different power semiconductor technologies is presented, including thorough static and dynamic characterizations. Emerging gallium nitride high-electron-mobility transistors (GaN HEMTs) and silicon carbide (SiC)-based devices are identified as potential candidates for the mentioned applications.

  • Analysis of Solid State Relay solutions based on different semiconductor technologies
    2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), 2017
    Co-Authors: Manuel Hernández Fernández, Xavier Perpiñà, M. Vellvehi, Xavier Jordà, Tomas Cabeza, S. Llorente
    Abstract:

    This paper provides an analysis on the design, implementation and operation of Bi-Directional Switches (BDS) based on power semiconductor devices intended to replace Electro Mechanical Relays (EMR) in home appliances. Static and dynamic characterizations of test vehicles developed using different power device semiconductor technologies (TRIAC, Super Junction (SJ) MOSFET, IGBT_) are presented. At this time, emerging Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) seem to be very suitable for the mentioned applications. Actually, GaN HEMTs based BDS has demonstrated to be the best solution to replace EMRs, with a high expectation to a significant cost reduction.

Manuel Hernández Fernández - One of the best experts on this subject based on the ideXlab platform.

  • Solid-State Relay Solutions for Induction Cooking Applications Based on Advanced Power Semiconductor Devices
    IEEE Transactions on Industrial Electronics, 2019
    Co-Authors: Manuel Hernández Fernández, Xavier Perpiñà, M. Vellvehi, Tomas Cabeza, S. Llorente, Jose Rebollo, David Sánchez, Xavier Jordà
    Abstract:

    This paper focuses on providing an improved and efficient alternative to electromechanical Relays (EMRs) in view of the growing demand characteristics for an effective power multiplexing in induction heating applications. A major analytical approach to the design and implementation of bidirectional switches (BDSs) based on different power semiconductor technologies is presented, including thorough static and dynamic characterizations. Emerging gallium nitride high-electron-mobility transistors (GaN HEMTs) and silicon carbide (SiC)-based devices are identified as potential candidates for the mentioned applications.

  • Analysis of Solid State Relay solutions based on different semiconductor technologies
    2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), 2017
    Co-Authors: Manuel Hernández Fernández, Xavier Perpiñà, M. Vellvehi, Xavier Jordà, Tomas Cabeza, S. Llorente
    Abstract:

    This paper provides an analysis on the design, implementation and operation of Bi-Directional Switches (BDS) based on power semiconductor devices intended to replace Electro Mechanical Relays (EMR) in home appliances. Static and dynamic characterizations of test vehicles developed using different power device semiconductor technologies (TRIAC, Super Junction (SJ) MOSFET, IGBT_) are presented. At this time, emerging Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) seem to be very suitable for the mentioned applications. Actually, GaN HEMTs based BDS has demonstrated to be the best solution to replace EMRs, with a high expectation to a significant cost reduction.