## Sputter Yield

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### Jyrki Räisänen - One of the best experts on this subject based on the ideXlab platform.

• ##### Composition dependence of Si 1 − x Ge x Sputter Yield
Physical Review B, 2005
Co-Authors: Vladimir Tuboltsev, Pasi Jalkanen, M Kolodyazhnaya, Jyrki Räisänen
Abstract:

Sputtering Yields have been measured for unstrained Si{sub 1-x}Ge{sub x} (x=0-1) alloys when bombarded with Ar{sup +} ions within the linear cascade regime. Nonlinear S-shape dependence of the Sputter Yield as a function of the alloy composition has been revealed. The dependence is analyzed within the frameworks of the cascade theory conventionally accepted to be the most systematic to date theoretical approach in Sputtering. In view of a linear composition dependence predicted for the Sputter Yield by the cascade theory adapted for polyatomic substrates, the nonlinearity observed in our experiments is shown to be related to the alloying effect on the surface binding energies of the alloy components. Based on this analysis, an interpretation is proposed for the experimentally observed nonlinear composition dependence of Si{sub 1-x}Ge{sub x} Sputter Yield. The Yield is expressed by an equation derived from the cascade theory with additional terms of the composition parameter x. The form of the equation implies that for a polyatomic substrate the surface binding energy of an individual atom is determined not only by its own chemical identity but to a considerable degree by the identities of its neighbors.

• ##### Composition dependence of Si 1 − x Ge x Sputter Yield
Physical Review B, 2005
Co-Authors: Vladimir Tuboltsev, Pasi Jalkanen, M Kolodyazhnaya, Jyrki Räisänen
Abstract:

Sputtering Yields have been measured for unstrained ${\mathrm{Si}}_{1\ensuremath{-}x}{\mathrm{Ge}}_{x}$ $(x=0--1)$ alloys when bombarded with ${\mathrm{Ar}}^{+}$ ions within the linear cascade regime. Nonlinear S-shape dependence of the Sputter Yield as a function of the alloy composition has been revealed. The dependence is analyzed within the frameworks of the cascade theory conventionally accepted to be the most systematic to date theoretical approach in Sputtering. In view of a linear composition dependence predicted for the Sputter Yield by the cascade theory adapted for polyatomic substrates, the nonlinearity observed in our experiments is shown to be related to the alloying effect on the surface binding energies of the alloy components. Based on this analysis, an interpretation is proposed for the experimentally observed nonlinear composition dependence of ${\mathrm{Si}}_{1\ensuremath{-}x}{\mathrm{Ge}}_{x}$ Sputter Yield. The Yield is expressed by an equation derived from the cascade theory with additional terms of the composition parameter $x$. The form of the equation implies that for a polyatomic substrate the surface binding energy of an individual atom is determined not only by its own chemical identity but to a considerable degree by the identities of its neighbors.

• ##### composition dependence of si 1 x ge x Sputter Yield
Physical Review B, 2005
Co-Authors: Vladimir Tuboltsev, Pasi Jalkanen, M Kolodyazhnaya, Jyrki Räisänen
Abstract:

Sputtering Yields have been measured for unstrained ${\mathrm{Si}}_{1\ensuremath{-}x}{\mathrm{Ge}}_{x}$ $(x=0--1)$ alloys when bombarded with ${\mathrm{Ar}}^{+}$ ions within the linear cascade regime. Nonlinear S-shape dependence of the Sputter Yield as a function of the alloy composition has been revealed. The dependence is analyzed within the frameworks of the cascade theory conventionally accepted to be the most systematic to date theoretical approach in Sputtering. In view of a linear composition dependence predicted for the Sputter Yield by the cascade theory adapted for polyatomic substrates, the nonlinearity observed in our experiments is shown to be related to the alloying effect on the surface binding energies of the alloy components. Based on this analysis, an interpretation is proposed for the experimentally observed nonlinear composition dependence of ${\mathrm{Si}}_{1\ensuremath{-}x}{\mathrm{Ge}}_{x}$ Sputter Yield. The Yield is expressed by an equation derived from the cascade theory with additional terms of the composition parameter $x$. The form of the equation implies that for a polyatomic substrate the surface binding energy of an individual atom is determined not only by its own chemical identity but to a considerable degree by the identities of its neighbors.

### R Arredondo - One of the best experts on this subject based on the ideXlab platform.

• ##### angle dependent Sputter Yield measurements of kev d ions on w and fe and comparison with sdtrimsp and sdtrimsp 3d
Nuclear materials and energy, 2019
Co-Authors: R Arredondo, M Oberkofler, T Schwarzselinger, U Von Toussaint, V V Burwitz, A Mutzke, E Vassallo, M Pedroni
Abstract:

Abstract The influence of surface roughness on the Sputter Yield was investigated as a function of the angle of incidence. In this work, nm-smooth and rough samples with roughnesses on the µm length scale were produced by depositing thin Fe and W films on smooth and rough Si substrates via magnetron Sputtering. The surface morphology of the samples was determined by atomic force microscopy. The samples were exposed to a 6 keV D3+ ion beam (2 keV/D) under various angles of incidence ranging from 0° to 75° with respect to the surface normal to fluences of the order of 1022 D/m2. The layer thickness was measured by Rutherford backscattering spectrometry (RBS) before and after erosion. The resulting Sputter Yields were compared to simulations performed with SDTrimSP (static and dynamic) and SDTrimSP-3D (static), showing good qualitative agreement in all cases, as well as agreement with literature data at normal incidence. This constitutes the first experimental benchmark of SDTrimSP-3D. A discrepancy in the value of the Sputter Yield for smooth W at normal incidence was observed between the SDTrimSP simulations and the experimental values obtained in this work and found in literature. Analogous experiments were performed to study the Sputter Yield at normal incidence of 2 keV/D on smooth Au and 6 keV He on smooth W. These Sputter Yields were also compared to SDTrimSP simulations and literature, showing good agreement in all cases.

• ##### Angle-dependent Sputter Yield measurements of keV D ions on W and Fe and comparison with SDTrimSP and SDTrimSP-3D
Elsevier, 2019
Co-Authors: R Arredondo, M Oberkofler, U Von Toussaint, V V Burwitz, A Mutzke, E Vassallo, T. Schwarz-selinger, M Pedroni
Abstract:

The influence of surface roughness on the Sputter Yield was investigated as a function of the angle of incidence. In this work, nm-smooth and rough samples with roughnesses on the µm length scale were produced by depositing thin Fe and W films on smooth and rough Si substrates via magnetron Sputtering. The surface morphology of the samples was determined by atomic force microscopy. The samples were exposed to a 6 keV D3+ ion beam (2 keV/D) under various angles of incidence ranging from 0° to 75° with respect to the surface normal to fluences of the order of 1022 D/m2. The layer thickness was measured by Rutherford backscattering spectrometry (RBS) before and after erosion. The resulting Sputter Yields were compared to simulations performed with SDTrimSP (static and dynamic) and SDTrimSP-3D (static), showing good qualitative agreement in all cases, as well as agreement with literature data at normal incidence. This constitutes the first experimental benchmark of SDTrimSP-3D. A discrepancy in the value of the Sputter Yield for smooth W at normal incidence was observed between the SDTrimSP simulations and the experimental values obtained in this work and found in literature. Analogous experiments were performed to study the Sputter Yield at normal incidence of 2 keV/D on smooth Au and 6 keV He on smooth W. These Sputter Yields were also compared to SDTrimSP simulations and literature, showing good agreement in all cases. Keywords: Sputtering, SDTrimSP, Roughnes

### Luke Hanley - One of the best experts on this subject based on the ideXlab platform.

• ##### surface analysis studies of Yield enhancements in secondary ion mass spectrometry by polyatomic projectiles
Journal of Physical Chemistry B, 2001
Co-Authors: Erick R. Fuoco, Greg Gillen, Muthu B. J. Wijesundara, William E Wallace, Luke Hanley
Abstract:

In this paper we examine the mechanism of secondary ion Yield enhancements previously observed for polyatomic projectiles by measuring the weight loss, volume loss, and surface composition of poly(methyl methacrylate) (PMMA) films Sputtered by keV SF5+ and Ar+ projectile ions. The Sputter Yieldthe amount of material removed from the surface by 3.0 keV SF5+ projectileswas found to be 2.2 ± 0.8 higher than for Ar+ projectiles, measured by weight loss in the PMMA film with a quartz crystal microbalance. This result is consistent with Sputter Yield measurements reported here using 5.5 keV ions and stylus profilometry. Thus, the >10× enhancement in secondary ion Yield in secondary ion mass spectrometry observed for polyatomic ion projectiles is not attributable to the modest ∼2× enhancements observed in the Sputter Yields for this molecular solid. Surface chemical measurements by X-ray photoelectron spectroscopy also indicated fundamental differences in atomic versus polyatomic Sputtering mechanisms at 3.0 keV...

### M Pedroni - One of the best experts on this subject based on the ideXlab platform.

• ##### angle dependent Sputter Yield measurements of kev d ions on w and fe and comparison with sdtrimsp and sdtrimsp 3d
Nuclear materials and energy, 2019
Co-Authors: R Arredondo, M Oberkofler, T Schwarzselinger, U Von Toussaint, V V Burwitz, A Mutzke, E Vassallo, M Pedroni
Abstract:

Abstract The influence of surface roughness on the Sputter Yield was investigated as a function of the angle of incidence. In this work, nm-smooth and rough samples with roughnesses on the µm length scale were produced by depositing thin Fe and W films on smooth and rough Si substrates via magnetron Sputtering. The surface morphology of the samples was determined by atomic force microscopy. The samples were exposed to a 6 keV D3+ ion beam (2 keV/D) under various angles of incidence ranging from 0° to 75° with respect to the surface normal to fluences of the order of 1022 D/m2. The layer thickness was measured by Rutherford backscattering spectrometry (RBS) before and after erosion. The resulting Sputter Yields were compared to simulations performed with SDTrimSP (static and dynamic) and SDTrimSP-3D (static), showing good qualitative agreement in all cases, as well as agreement with literature data at normal incidence. This constitutes the first experimental benchmark of SDTrimSP-3D. A discrepancy in the value of the Sputter Yield for smooth W at normal incidence was observed between the SDTrimSP simulations and the experimental values obtained in this work and found in literature. Analogous experiments were performed to study the Sputter Yield at normal incidence of 2 keV/D on smooth Au and 6 keV He on smooth W. These Sputter Yields were also compared to SDTrimSP simulations and literature, showing good agreement in all cases.

• ##### Angle-dependent Sputter Yield measurements of keV D ions on W and Fe and comparison with SDTrimSP and SDTrimSP-3D
Elsevier, 2019
Co-Authors: R Arredondo, M Oberkofler, U Von Toussaint, V V Burwitz, A Mutzke, E Vassallo, T. Schwarz-selinger, M Pedroni
Abstract:

The influence of surface roughness on the Sputter Yield was investigated as a function of the angle of incidence. In this work, nm-smooth and rough samples with roughnesses on the µm length scale were produced by depositing thin Fe and W films on smooth and rough Si substrates via magnetron Sputtering. The surface morphology of the samples was determined by atomic force microscopy. The samples were exposed to a 6 keV D3+ ion beam (2 keV/D) under various angles of incidence ranging from 0° to 75° with respect to the surface normal to fluences of the order of 1022 D/m2. The layer thickness was measured by Rutherford backscattering spectrometry (RBS) before and after erosion. The resulting Sputter Yields were compared to simulations performed with SDTrimSP (static and dynamic) and SDTrimSP-3D (static), showing good qualitative agreement in all cases, as well as agreement with literature data at normal incidence. This constitutes the first experimental benchmark of SDTrimSP-3D. A discrepancy in the value of the Sputter Yield for smooth W at normal incidence was observed between the SDTrimSP simulations and the experimental values obtained in this work and found in literature. Analogous experiments were performed to study the Sputter Yield at normal incidence of 2 keV/D on smooth Au and 6 keV He on smooth W. These Sputter Yields were also compared to SDTrimSP simulations and literature, showing good agreement in all cases. Keywords: Sputtering, SDTrimSP, Roughnes

### Diederik Depla - One of the best experts on this subject based on the ideXlab platform.

• ##### Sputter Yield measurements to evaluate the target state during reactive magnetron Sputtering
Surface & Coatings Technology, 2020
Co-Authors: Roeland Schelfhout, Koen Strijckmans, Diederik Depla
Abstract:

Abstract The Sputter Yield and discharge voltage of fourteen target materials (Al, Cr, Cu, Mg, Mo, Nb, Pb, Ta, Ti, V, W, Y, Zn, and Zr) have been measured during reactive Sputtering in argon/oxygen mixtures. The obtained oxide Sputter Yields strongly differ from the published data based on ion beam experiments. A second observation is that based on the discharge voltage behavior observed during target oxidation, the materials can be subdivided into two groups. For the first group, the discharge voltage increases on the target oxidation, while for the second group the opposite behavior is observed. Both observations are explained based on a model that accounts for oxygen implantation into the target, preferential oxygen Sputtering, and additional oxygen loss mechanisms such as outdiffusion. The difference between both groups can be explained from the oxygen fraction in the gas discharge required to fully oxidize the target surface. This required fraction is lower for the first group, and higher for the second group, than the oxygen fraction when the reactive Sputter process switches into poisoned mode. The required fraction is mainly defined by the oxide Sputter Yield. The lower Sputter Yield as compared to literature values can be attributed to implanted oxygen that dilutes the formed oxide and/or continuously replaces Sputtered oxygen.

• ##### Modeling target erosion during reactive Sputtering
Applied Surface Science, 2015
Co-Authors: Koen Strijckmans, Diederik Depla
Abstract:

Abstract The influence of the reactive Sputter conditions on the racetrack and the Sputter profile for an Al/O2 DC reactive Sputter system is studied by modeling. The role of redeposition, i.e. the deposition of Sputtered material back on the target, is therefore taken into account. The used model RSD2013 is capable of simulating the effect of redeposition on the target condition in a spatial resolved way. Comparison between including and excluding redeposition in the RSD2013 model shows that the in-depth oxidation profile of the target differs. Modeling shows that it is important to distinguish between the formed racetrack, i.e. the erosion depth profile, and the Sputter profile. The latter defines the distribution of the Sputtered atoms in the vacuum chamber. As the target condition defines the Sputter Yield, it does determine the racetrack and the Sputter profile of the planar circular target. Both the shape of the racetrack and the Sputter profile change as function of the redeposition fraction as well as function of the oxygen flow change. Clear asymmetries and narrowing are observed for the racetrack shape. Similar effects are noticed for the Sputter profile but to a different extent. Based on this study, the often heard misconception that the racetrack shape defines the distribution of the Sputtered atoms during reactive Sputtering is proven to be wrong.

• ##### On the effective Sputter Yield during magnetron Sputter deposition
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2014
Co-Authors: Diederik Depla
Abstract:

Abstract The effective Sputter Yield during magnetron Sputtering of elemental targets was measured by weighing the target before and after Sputtering at constant discharge voltage. During the experiment, the pressure and discharge current were logged. The effective Sputter Yield is compared with a set of published semi-empirical equations to calculate the Sputter Yield for ion/solid interactions. The differences between both Yields are discussed based on different contributions which affect the effective Sputter Yield such as redeposition, the target roughness and the contribution of high energetic neutrals.

• ##### target poisoning during reactive magnetron Sputtering part iii the prediction of the critical reactive gas mole fraction
Surface & Coatings Technology, 2004
Co-Authors: Diederik Depla, R De Gryse
Abstract:

To predict the critical reactive gas mole fraction, needed to induce an abrupt change in the reactive magnetron Sputtering process, a simplified scheme is proposed. The scheme is based on the equations proposed in part I and part II of this paper. A quite accurate prediction can be made using a small number of parameters. The pumping speed and the discharge current are the key experimental parameters, which define whether the gettering process or the target poisoning dominates the abrupt changes noticed during reactive magnetron Sputtering. In this first case, i.e. when gettering dominates, the prediction is straightforward and the critical mole fraction can be calculated from the pumping speed, the current, the Sputter Yield of the target material and an average value for sticking coefficient of the reactive gas on the deposited target material. In the latter case, i.e. when the poisoning mechanism dominates, the prediction is a little more complicated, as one needs the reaction probability of the implanted reactive ions. It is shown that this can be estimated from the electronegativity difference between the reactive gas atoms and the target atoms.