Thermal Model

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Ralph E White - One of the best experts on this subject based on the ideXlab platform.

  • a distributed Thermal Model for a li ion electrode plate pair
    Journal of Power Sources, 2013
    Co-Authors: Ralph E White
    Abstract:

    Abstract This paper presents a distributed Thermal Model for a lithium-ion electrode plate pair used to predict the distributed electrical and Thermal behavior of the electrode pair including tabs. Our Model was developed by coupling the heat equation with a pseudo two dimensional (P2D) physics-based electrochemical Model. The local heat generation rate is predicted by the P2D Model at every node point in the 2D electrode pair. To reduce significantly the computation load of the Model, a linear approximation method is introduced to decouple the electrochemical Model from the heat equation with a very slight loss in accuracy.

  • Thermal Model for lithium ion battery pack with mixed parallel and series configuration
    Journal of The Electrochemical Society, 2011
    Co-Authors: Meng Guo, Ralph E White
    Abstract:

    In this work, a mathematical Thermal Model for lithium ion battery pack with specific configuration was developed by coupling the single particle Model and energy balance equation with basic circuit constraints. The temperature variation at different parts of the battery pack was considered in charge/discharge operations, and the dependency of cell parameters on temperature were taken into account. The Model was validated by comparing the simulated current, voltage, and temperature profiles with experimental data. Case studies such as battery balancing and circuit interruption were also performed and discussed. VC 2011 The Electrochemical Society. [DOI: 10.1149/1.3624836] All rights reserved.

  • Thermal Model for a li ion cell
    Journal of The Electrochemical Society, 2008
    Co-Authors: Karthikeyan Kumaresan, Godfrey Sikha, Ralph E White
    Abstract:

    A Thermal Model for a lithium-ion cell is presented and used to predict discharge performance at different operating temperatures. The results from the simulations are compared to experimental data obtained from lithium-ion pouch cells. The Model includes a set of parameters (and their concentration and temperature dependencies) that has been obtained for a lithium-ion cell composed of a mesocarbon microbead anode, LiCoO 2 cathode in 1 M LiPF 6 salt, in a mixture of ethylene carbonate, propylene carbonate, ethyl-methyl carbonate, and diethyl carbonate electrolyte. The parameter set was obtained by comparing the Model predictions to the experimental discharge profiles obtained at various temperatures and rates. The concentration and temperature dependence of the extracted parameters were correlated through empirical expressions. Also, the effect of including the Thermal dependence of various parameters in the Model on the simulated discharge profiles is discussed.

Frede Blaabjerg - One of the best experts on this subject based on the ideXlab platform.

  • a lumped Thermal Model including Thermal coupling and Thermal boundary conditions for high power igbt modules
    IEEE Transactions on Power Electronics, 2018
    Co-Authors: Amir Sajjad Bahman, Frede Blaabjerg
    Abstract:

    Detailed Thermal dynamics of high-power IGBT modules are important information for the reliability analysis and Thermal design of power electronic systems. However, the existing Thermal Models have their limits to correctly predict these complicated Thermal behavior in the IGBTs: The typically used Thermal Model based on one-dimensional RC lumps have limits to provide temperature distributions inside the device; moreover, some variable factors in the real-field applications like the cooling and heating conditions of the converter cannot be adapted. On the other hand, the more advanced three-dimensional (3-D) Thermal Models based on finite-element method (FEM) need massive computations, which make the long-term Thermal dynamics difficult to calculate. In this paper, a new lumped 3-D Thermal Model is proposed, which can be easily characterized from FEM simulations and can acquire the critical Thermal distribution under long-term studies. Meanwhile, the boundary conditions for the Thermal analysis are Modeled and included, which can be adapted to different real-field applications of power electronic converters. Finally, the accuracy of the proposed Thermal Model is verified by FEM simulations and experimental results show a good agreement.

  • general 3d lumped Thermal Model with various boundary conditions for high power igbt modules
    Applied Power Electronics Conference, 2016
    Co-Authors: Amir Sajjad Bahman, Frede Blaabjerg
    Abstract:

    Accurate Thermal dynamics Modeling of high power Insulated Gate Bipolar Transistor (IGBT) modules is important information for the reliability analysis and Thermal design of power electronic systems. However, the existing Thermal Models have their limits to correctly predict these complicated Thermal behaviors in the IGBTs. In this paper, a new three-dimensional (3D) lumped Thermal Model is proposed, which can easily be characterized from Finite Element Methods (FEM) based simulation and acquire the Thermal distribution in critical points. Meanwhile the boundary conditions including the cooling system and power losses are Modeled in the 3D Thermal Model, which can be adapted to different real field applications of power electronic converters. The accuracy of the proposed Thermal Model is verified by experimental results.

  • a temperature dependent Thermal Model of igbt modules suitable for circuit level simulations
    IEEE Transactions on Industry Applications, 2016
    Co-Authors: Huai Wang, Kristian Bonderup Pedersen, Pramod Ghimire, Francesco Iannuzzo, Frede Blaabjerg
    Abstract:

    A basic challenge in the insulated gate bipolar transistor (IGBT) transient simulation study is to obtain the realistic junction temperature, which demands not only accurate electrical simulations but also precise Thermal impedance. This paper proposed a transient Thermal Model for IGBT junction temperature simulations during short circuits or overloads. The updated Cauer Thermal Model with varying Thermal parameters is obtained by means of finite-element method (FEM) Thermal simulations with temperature-dependent physical parameters. The proposed method is applied to a case study of a 1700 V/1000 A IGBT module. Furthermore, a testing setup is built up to validate the simulation results, which is composed of a IGBT baseplate temperature control unit, an infrared camera with a maximum of 3 kHz sampling frequency, and a black-painted open IGBT module.

  • loss and Thermal Model for power semiconductors including device rating information
    Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA) 2014 International, 2014
    Co-Authors: Amir Sajjad Bahman, Szymon Beczkowski, Frede Blaabjerg
    Abstract:

    The electrical loading and device rating are both important factors that determine the loss and Thermal behaviors of power semiconductor devices. In the existing loss and Thermal Models, only the electrical loadings are focused and treated as design variables, while the device rating is normally pre-defined by experience with poor design flexibility. Consequently a more complete loss and Thermal Model is proposed in this paper, which takes into account not only the electrical loading but also the device rating as input variables. The quantified correlation between the power loss, Thermal impedance and silicon area of Insulated Gate Bipolar Transistor (IGBT) is mathematically established. By this new Modeling approach, all factors that have impacts to the loss and Thermal profiles of power devices can be accurately mapped, enabling more design freedom to optimize the efficiency and Thermal loading of power converter. The proposed Model can be further improved by experimental tests, and it is well agreed by both circuit and Finite Element Method (FEM) simulation results.

H. Olsson - One of the best experts on this subject based on the ideXlab platform.

  • a real time Thermal Model of a permanent magnet synchronous motor
    IEEE Transactions on Power Electronics, 2010
    Co-Authors: Georgios Demetriades, H Z De La Parra, E. Andersson, H. Olsson
    Abstract:

    This paper presents a real-time Thermal Model with calculated parameters based on the geometry of the different components of a permanent-magnet synchronous motor. The Model in state-space format has been discretized and a Model-order reduction has been applied to minimize the complexity. The Model has been implemented in a DSP and predicts the temperature of the different parts of the motor accurately in all operating conditions, i.e., steady-state, transient, and stall torque. The results have been compared with real measurements using temperature transducers showing very good performance of the proposed Thermal Model.

Andrew D. Sommers - One of the best experts on this subject based on the ideXlab platform.

  • a Thermal Model of friction stir welding applied to sc modified al zn mg cu alloy extrusions
    International Journal of Machine Tools & Manufacture, 2009
    Co-Authors: Carter Hamilton, Andrew D. Sommers, Stanisław Dymek
    Abstract:

    Abstract A Thermal Model of friction stir welding is presented that proposes an energy-based formulation of the Johnson–Cook plasticity Model in order to account for heat generation due to plastic deformation. The proposed formulation is derived from an empirical, linear relationship observed between the ratio of the maximum welding temperature to the solidus temperature of the alloy and the welding energy. The Thermal Model is applied to Sc-modified Al–Zn–Mg–Cu alloy extrusions joined by friction stir welding at 225, 250, 300 and 400 RPM (all other weld parameters held constant). With the incorporation of heat generation due to plastic deformation, the Thermal Model accurately predicts the maximum weld temperatures and temperature profiles at the higher energy weld conditions, i.e. 300 and 400 RPM. At the lower energy welds (i.e. 225 and 250 RPM) where plastic deformation contributes a larger portion to the total heat generation, the Model under-predicts the maximum weld temperatures under the tool shoulder but shows good agreement with the remaining experimental temperature data.

  • A Thermal Model of friction stir welding in aluminum alloys
    International Journal of Machine Tools and Manufacture, 2008
    Co-Authors: Carter Hamilton, Stanisław Dymek, Andrew D. Sommers
    Abstract:

    A Thermal Model of friction stir welding was developed that utilizes a new slip factor based on the energy per unit length of weld. The slip factor is derived from an empirical, linear relationship observed between the ratio of the maximum welding temperature to the solidus temperature and the welding energy. The Thermal Model successfully predicts the maximum welding temperature over a wide range of energy levels but under predicts the temperature for low energy levels for which heat from plastic deformation dominates. The Thermal Model supports the hypothesis that the relationship between the temperature ratio and energy level is characteristic of aluminum alloys that share similar Thermal diffusivities. The Thermal Model can be used to generate characteristic temperature curves from which the maximum welding temperature in an alloy may be estimated if the Thermal diffusivity, welding parameters and tool geometry are known.

Amir Sajjad Bahman - One of the best experts on this subject based on the ideXlab platform.

  • a lumped Thermal Model including Thermal coupling and Thermal boundary conditions for high power igbt modules
    IEEE Transactions on Power Electronics, 2018
    Co-Authors: Amir Sajjad Bahman, Frede Blaabjerg
    Abstract:

    Detailed Thermal dynamics of high-power IGBT modules are important information for the reliability analysis and Thermal design of power electronic systems. However, the existing Thermal Models have their limits to correctly predict these complicated Thermal behavior in the IGBTs: The typically used Thermal Model based on one-dimensional RC lumps have limits to provide temperature distributions inside the device; moreover, some variable factors in the real-field applications like the cooling and heating conditions of the converter cannot be adapted. On the other hand, the more advanced three-dimensional (3-D) Thermal Models based on finite-element method (FEM) need massive computations, which make the long-term Thermal dynamics difficult to calculate. In this paper, a new lumped 3-D Thermal Model is proposed, which can be easily characterized from FEM simulations and can acquire the critical Thermal distribution under long-term studies. Meanwhile, the boundary conditions for the Thermal analysis are Modeled and included, which can be adapted to different real-field applications of power electronic converters. Finally, the accuracy of the proposed Thermal Model is verified by FEM simulations and experimental results show a good agreement.

  • general 3d lumped Thermal Model with various boundary conditions for high power igbt modules
    Applied Power Electronics Conference, 2016
    Co-Authors: Amir Sajjad Bahman, Frede Blaabjerg
    Abstract:

    Accurate Thermal dynamics Modeling of high power Insulated Gate Bipolar Transistor (IGBT) modules is important information for the reliability analysis and Thermal design of power electronic systems. However, the existing Thermal Models have their limits to correctly predict these complicated Thermal behaviors in the IGBTs. In this paper, a new three-dimensional (3D) lumped Thermal Model is proposed, which can easily be characterized from Finite Element Methods (FEM) based simulation and acquire the Thermal distribution in critical points. Meanwhile the boundary conditions including the cooling system and power losses are Modeled in the 3D Thermal Model, which can be adapted to different real field applications of power electronic converters. The accuracy of the proposed Thermal Model is verified by experimental results.

  • loss and Thermal Model for power semiconductors including device rating information
    Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA) 2014 International, 2014
    Co-Authors: Amir Sajjad Bahman, Szymon Beczkowski, Frede Blaabjerg
    Abstract:

    The electrical loading and device rating are both important factors that determine the loss and Thermal behaviors of power semiconductor devices. In the existing loss and Thermal Models, only the electrical loadings are focused and treated as design variables, while the device rating is normally pre-defined by experience with poor design flexibility. Consequently a more complete loss and Thermal Model is proposed in this paper, which takes into account not only the electrical loading but also the device rating as input variables. The quantified correlation between the power loss, Thermal impedance and silicon area of Insulated Gate Bipolar Transistor (IGBT) is mathematically established. By this new Modeling approach, all factors that have impacts to the loss and Thermal profiles of power devices can be accurately mapped, enabling more design freedom to optimize the efficiency and Thermal loading of power converter. The proposed Model can be further improved by experimental tests, and it is well agreed by both circuit and Finite Element Method (FEM) simulation results.