The Experts below are selected from a list of 216 Experts worldwide ranked by ideXlab platform
A Figueras - One of the best experts on this subject based on the ideXlab platform.
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β sic deposition by hot wall mocvd using Tetramethylsilane
Surface & Coatings Technology, 1996Co-Authors: F Henry, A Figueras, B Armas, C Combescure, S GarelikAbstract:β-SiC polycrystalline layers were grown by MOCVD in a hot-wall reactor using Tetramethylsilane (TMS). The dependence of the kinetics of deposition on the temperature and the TMS partial pressure was obtained. Gas-phase homogeneity inside the reactor was studied. Thermodynamic calculations on the thermal decomposition of TMS were performed.
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thermodynamic analysis of metalorganic chemical vapour deposition of sic using Tetramethylsilane as precursor ii influence of the minoritary Tetramethylsilane pyrolysis byproducts in the preferred crystallization of sic layers
Journal of Crystal Growth, 1995Co-Authors: V Madigou, S Veintemillas, R Rodriguezclemente, A Figueras, B Armas, C CombescureAbstract:Abstract Thermodynamical calculations on Tetramethylsilane (TMS) pyrolysis were performed in order to study the evolution of ethylene and acetylene partial pressures as a function of the experimental conditions. The different preferential orientations of the deposited SiC films are correlated with the variation of the partial pressure of these byproducts.
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thermodynamic analysis of metalorganic chemical vapour deposition of sic using Tetramethylsilane as precursor i identification of the main reactions
Journal of Crystal Growth, 1995Co-Authors: S Veintemillas, V Madigou, R Rodriguezclemente, A FiguerasAbstract:Abstract Thermodynamical calculations on the Tetramethylsilane (TMS) pyrolysis were performed under two assumptions: (1) gaseous equilibria; (2) gaseous and SiC solid-vapour equilibria. From the results obtained by these calculations, the evolution of the main species under different experimental conditions was shown. For every component, a comparison of the curves, obtained under the two assumptions, permits us to give possible chemical reactions producing the SiC layers.
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a thermodynamical approach to Tetramethylsilane tms pyrolysis application to sic coatings obtained by mocvd
Journal of Crystal Growth, 1993Co-Authors: S Veintemillasverdaguer, A Figueras, R RodriguezclementeAbstract:Tetramethylsilane is an organometallic precursor commonly used in the preparation of SiC layers by MOCVD. However, little is known about the chemical reactions involved in the deposition process. Thermal decomposition of TMS in the presence of H 2 used as carrier gas, has been thermodynamically modelled considering the byproducts detected in the exhaust gas and some others that theoretically could be present: C, Si, H 2 , mononuclear silanes and mononuclear methylsilanes, methane, ethane, ethene, acetylene and SiC vapour
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influence of temperature and Tetramethylsilane partial pressure on the β sic deposition by cold wall chemical vapor deposition
Journal of Crystal Growth, 1992Co-Authors: R Rodriguezclemente, A Figueras, B Armas, S Garelik, C CombescureAbstract:Abstract β-SiC polycrystalline layers were grown by LPCVD in a cold wall reactor using TMS (Tetramethylsilane) diluted in hydrogen as precursur. The studies on the deposition show that the kinetics depends on temperature in the range between 1100 and 1500°C at a total pressure of 30 Torr. The morphology and deposition rate of the layers were related to four factors: temperature, TMS partial pressure, hydrogen partial pressure and gas velocity. The rate of deposition depends on the balance between heterogeneous and homogeneous nucleation, crystal growth, as well as the factors controlling crystal growth: adsorption processes, temperature, supersaturation and gas velocity.
J M Jung - One of the best experts on this subject based on the ideXlab platform.
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On the photoionisation of liquid cyclohexane, 2,2,4 trimethylpentane and Tetramethylsilane
Chemical Physics Letters, 2003Co-Authors: J M JungAbstract:We propose a new spectral study of the ionisation of liquid cyclohexane, 2,2,4 trimethylpentane and Tetramethylsilane excited by single photons of synchrotron radiation in the vacuum ultraviolet. Ionisation yields and effective cross-sections are obtained, between 6 and 10.8 eV excitation energy, and compared to the absorption and photocurrent spectra in the same spectral region. In addition to the well-known conduction band states, the existence of charge transfer states in the band gap is evidenced for the first time.
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single photon absorption of liquid cyclohexane 2 2 4 trimethylpentane and Tetramethylsilane in the vacuum ultraviolet
Chemical Physics Letters, 2003Co-Authors: J M Jung, H GressAbstract:The excitation of pure liquid cyclohexane, 2,2,4 trimethylpentane and Tetramethylsilane in the vacuum ultraviolet is examined with the help of a new experimental technique allowing fine measurements of single-photon absorption spectra of pure liquids with the synchrotron radiation, up to 10.8 eV. The first experimental results are presented, discussed and compared to the gas phase and photoconduction data already published on these media. A description of the molecular relaxations below the conduction bands of these liquids is proposed.
H Gress - One of the best experts on this subject based on the ideXlab platform.
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single photon absorption of liquid cyclohexane 2 2 4 trimethylpentane and Tetramethylsilane in the vacuum ultraviolet
Chemical Physics Letters, 2003Co-Authors: J M Jung, H GressAbstract:The excitation of pure liquid cyclohexane, 2,2,4 trimethylpentane and Tetramethylsilane in the vacuum ultraviolet is examined with the help of a new experimental technique allowing fine measurements of single-photon absorption spectra of pure liquids with the synchrotron radiation, up to 10.8 eV. The first experimental results are presented, discussed and compared to the gas phase and photoconduction data already published on these media. A description of the molecular relaxations below the conduction bands of these liquids is proposed.
J P S Badyal - One of the best experts on this subject based on the ideXlab platform.
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plasma enhanced chemical vapor deposition of organosilicon materials a comparison of hexamethyldisilane and Tetramethylsilane precursors
Macromolecules, 1996Co-Authors: J L C Fonseca, S Tasker, David C Apperley, J P S BadyalAbstract:Plasma polymerization of hexamethyldisilane ([CH3]3SiSi[CH3]3) and Tetramethylsilane ([CH3]4Si) has been investigated by XPS, FTIR, solid state NMR, and plasma emission diagnostics. Thin carbosilane films and powders can be deposited by this method. Hexamethyldisilane is found to undergo glow discharge polymerization much more readily than Tetramethylsilane; this has been attributed to the chromophoric ⪫Si−Si⪪ bond contained in the former precursor.
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plasma polymerization of Tetramethylsilane
Chemistry of Materials, 1993Co-Authors: J L C Fonseca, David C Apperley, J P S BadyalAbstract:Plasma polymerization of Tetramethylsilane (Si [CH314) over short periods results in the formation of a continuous organosilicon layer, whereas longer deposition times produce a fine brown powder. As-deposited and aged plasma polymer coatings/powders have been characterized by XPS, FTIR, XRD, and solid-state NMR. The carbosilane plasma polymer is found to mainly consist of a random network of -[CH31.SiHmlinkages.
C Combescure - One of the best experts on this subject based on the ideXlab platform.
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β sic deposition by hot wall mocvd using Tetramethylsilane
Surface & Coatings Technology, 1996Co-Authors: F Henry, A Figueras, B Armas, C Combescure, S GarelikAbstract:β-SiC polycrystalline layers were grown by MOCVD in a hot-wall reactor using Tetramethylsilane (TMS). The dependence of the kinetics of deposition on the temperature and the TMS partial pressure was obtained. Gas-phase homogeneity inside the reactor was studied. Thermodynamic calculations on the thermal decomposition of TMS were performed.
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thermodynamic analysis of metalorganic chemical vapour deposition of sic using Tetramethylsilane as precursor ii influence of the minoritary Tetramethylsilane pyrolysis byproducts in the preferred crystallization of sic layers
Journal of Crystal Growth, 1995Co-Authors: V Madigou, S Veintemillas, R Rodriguezclemente, A Figueras, B Armas, C CombescureAbstract:Abstract Thermodynamical calculations on Tetramethylsilane (TMS) pyrolysis were performed in order to study the evolution of ethylene and acetylene partial pressures as a function of the experimental conditions. The different preferential orientations of the deposited SiC films are correlated with the variation of the partial pressure of these byproducts.
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influence of temperature and Tetramethylsilane partial pressure on the β sic deposition by cold wall chemical vapor deposition
Journal of Crystal Growth, 1992Co-Authors: R Rodriguezclemente, A Figueras, B Armas, S Garelik, C CombescureAbstract:Abstract β-SiC polycrystalline layers were grown by LPCVD in a cold wall reactor using TMS (Tetramethylsilane) diluted in hydrogen as precursur. The studies on the deposition show that the kinetics depends on temperature in the range between 1100 and 1500°C at a total pressure of 30 Torr. The morphology and deposition rate of the layers were related to four factors: temperature, TMS partial pressure, hydrogen partial pressure and gas velocity. The rate of deposition depends on the balance between heterogeneous and homogeneous nucleation, crystal growth, as well as the factors controlling crystal growth: adsorption processes, temperature, supersaturation and gas velocity.
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growth and properties of cvd sic layers using Tetramethylsilane
Materials Science and Engineering B-advanced Functional Solid-state Materials, 1992Co-Authors: A Figueras, R Rodriguezclemente, B Armas, C Combescure, S Garelik, José Santiso, R Berjoan, J M Saurel, R CaplainAbstract:Abstract β-SiC layers were obtained by low pressure chemical vapour deposition from Tetramethylsilane diluted in H 2 without contamination of free silicon and carbon at temperatures between 1100 and 1500 °C and at chamber pressures between 15 and 100 Torr. Changes in the deposition parameters have marked effects on the morphology, structure and microhardness of the layers.
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INFLUENCE OF H2 PARTIAL PRESSURE ON THE MORPHOLOGY AND CRYSTALLIZATION OF SiC LAYERS OBTAINED BY LPCVD USING Tetramethylsilane
Journal De Physique Iv, 1991Co-Authors: A Figueras, B Armas, C Combescure, S Garelik, Rafael Rodríguez-clemente, José Santiso, A. Mazel, Yolande Kihn, J. SevelyAbstract:Silicon carbide layers have been produced by Chemical Vapor Deposition at low pressures (LPCVD) on graphite substrates from Tetramethylsilane and hydrogen. The effects of change in partial pressure of hydrogen on the kinetics, morphology and suucture of the layers have been examined. A model of the layer growth is developed.
