The Experts below are selected from a list of 213 Experts worldwide ranked by ideXlab platform
Yijen Chan - One of the best experts on this subject based on the ideXlab platform.
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influence of thin metal base thickness on the performance of cupc vertical organic Triodes
Applied Physics Letters, 2007Co-Authors: Shiaushin Cheng, Chuanyi Yang, Youche Chuang, Shihyen Lin, Yijen ChanAbstract:In this letter, the characteristics of vertical organic Triodes fabricated by using two copper phthalocyanine (CuPc) back-to-back Schottky diodes with different metal base thicknesses are reported. The vertical organic Triodes exhibit pronounced saturation regions in the output current-voltage characteristics. The common-emitter current gain reduces with increasing the Al base thickness due to the increase of recombination current at the base end resulted from the reduction of opening voids in the Al metal film. The common-emitter current gain of the device with 4.5nm thick Al base reaches 1.9 at VCE=−6V and JB=2.5mA∕cm2.
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all organic hot carrier Triodes with thin film metal base
Applied Physics Letters, 2006Co-Authors: Shiaushin Cheng, Shihyen Lin, Chunyuan Huang, Imin Chan, Yijen ChanAbstract:In this letter, the authors investigate the promising vertical-type Triodes based on small organic molecules and the related hot-carrier transport. The devices show transistorlike characteristics, in which output current can be modulated by demanding different input currents on their thin metal base electrodes. By using pentacene for the channel layer material and N,N′-di(naphthalen-l-yl)-N,N′-diphenyl-benzidine for the carrier energy-enhancing layer, the vertical-type hot carrier Triodes exhibit a good current saturation with current gain of 2.38 for both the common-base and common-emitter configurations. The mechanism of operation is proposed and examined by the basic electrical measurements.
Shiaushin Cheng - One of the best experts on this subject based on the ideXlab platform.
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influence of thin metal base thickness on the performance of cupc vertical organic Triodes
Applied Physics Letters, 2007Co-Authors: Shiaushin Cheng, Chuanyi Yang, Youche Chuang, Shihyen Lin, Yijen ChanAbstract:In this letter, the characteristics of vertical organic Triodes fabricated by using two copper phthalocyanine (CuPc) back-to-back Schottky diodes with different metal base thicknesses are reported. The vertical organic Triodes exhibit pronounced saturation regions in the output current-voltage characteristics. The common-emitter current gain reduces with increasing the Al base thickness due to the increase of recombination current at the base end resulted from the reduction of opening voids in the Al metal film. The common-emitter current gain of the device with 4.5nm thick Al base reaches 1.9 at VCE=−6V and JB=2.5mA∕cm2.
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all organic hot carrier Triodes with thin film metal base
Applied Physics Letters, 2006Co-Authors: Shiaushin Cheng, Shihyen Lin, Chunyuan Huang, Imin Chan, Yijen ChanAbstract:In this letter, the authors investigate the promising vertical-type Triodes based on small organic molecules and the related hot-carrier transport. The devices show transistorlike characteristics, in which output current can be modulated by demanding different input currents on their thin metal base electrodes. By using pentacene for the channel layer material and N,N′-di(naphthalen-l-yl)-N,N′-diphenyl-benzidine for the carrier energy-enhancing layer, the vertical-type hot carrier Triodes exhibit a good current saturation with current gain of 2.38 for both the common-base and common-emitter configurations. The mechanism of operation is proposed and examined by the basic electrical measurements.
Shihyen Lin - One of the best experts on this subject based on the ideXlab platform.
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influence of thin metal base thickness on the performance of cupc vertical organic Triodes
Applied Physics Letters, 2007Co-Authors: Shiaushin Cheng, Chuanyi Yang, Youche Chuang, Shihyen Lin, Yijen ChanAbstract:In this letter, the characteristics of vertical organic Triodes fabricated by using two copper phthalocyanine (CuPc) back-to-back Schottky diodes with different metal base thicknesses are reported. The vertical organic Triodes exhibit pronounced saturation regions in the output current-voltage characteristics. The common-emitter current gain reduces with increasing the Al base thickness due to the increase of recombination current at the base end resulted from the reduction of opening voids in the Al metal film. The common-emitter current gain of the device with 4.5nm thick Al base reaches 1.9 at VCE=−6V and JB=2.5mA∕cm2.
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all organic hot carrier Triodes with thin film metal base
Applied Physics Letters, 2006Co-Authors: Shiaushin Cheng, Shihyen Lin, Chunyuan Huang, Imin Chan, Yijen ChanAbstract:In this letter, the authors investigate the promising vertical-type Triodes based on small organic molecules and the related hot-carrier transport. The devices show transistorlike characteristics, in which output current can be modulated by demanding different input currents on their thin metal base electrodes. By using pentacene for the channel layer material and N,N′-di(naphthalen-l-yl)-N,N′-diphenyl-benzidine for the carrier energy-enhancing layer, the vertical-type hot carrier Triodes exhibit a good current saturation with current gain of 2.38 for both the common-base and common-emitter configurations. The mechanism of operation is proposed and examined by the basic electrical measurements.
C. A. Spindt - One of the best experts on this subject based on the ideXlab platform.
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field emission Triodes
IEEE Transactions on Electron Devices, 1991Co-Authors: R E Neidert, P M Phillips, S T Smith, C. A. SpindtAbstract:Triode RF amplifier structures using field emission cathodes have been investigated from both the theoretical and experimental viewpoint. The physically large experimental structure used and the theoretical calculations for that structure are described. The agreement between theory and experiment for both DC and AC measurements is shown to be very good. The theoretical circuit modeling has produced information useful in work on higher-frequency operation. A RF voltage gain of about 11 dB has been measured at low frequencies, dropping to 0 dB at 200 kHz; the cathode had a transconductance of only 38 mu S. Model calculations on the large structure used show operation to about 2 MHz with a more typical transconductance of 380 mu S for a 1000-cone field emission cathode. >
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DC I-V characteristics of field emitter Triodes
IEEE Transactions on Electron Devices, 1991Co-Authors: Heinz H. Busta, B.j. Zimmerman, M. C. Tringides, C. A. SpindtAbstract:A simple model that is applicable to Spindt-type emitter Triodes is presented. Experimentally, it has been observed that the gate current at zero collector voltage follows the same Fowler-Nordheim law as the collector current at high collector voltage, and that for low emission current densities, the sum of gate and collector currents is constant for any collector voltage and is given by the Fowler-Nordheim current I/sub FN/. Based on these observations, a simple model has been developed to calculate the I-V characteristics of a triode. By measuring the Fowler-Nordheim emission, emission area and field enhancement can be obtained assuming a value for the barrier height. Incorporating the gate current, the collector current can be calculated from I/sub c/=I/sub FN/-I/sub g/ as a function of collector voltage. The model's accuracy is best at low current density. At higher emission currents, deviations occur at low collector voltages because the constancy of gate and collector currents is violated. >
Imin Chan - One of the best experts on this subject based on the ideXlab platform.
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all organic hot carrier Triodes with thin film metal base
Applied Physics Letters, 2006Co-Authors: Shiaushin Cheng, Shihyen Lin, Chunyuan Huang, Imin Chan, Yijen ChanAbstract:In this letter, the authors investigate the promising vertical-type Triodes based on small organic molecules and the related hot-carrier transport. The devices show transistorlike characteristics, in which output current can be modulated by demanding different input currents on their thin metal base electrodes. By using pentacene for the channel layer material and N,N′-di(naphthalen-l-yl)-N,N′-diphenyl-benzidine for the carrier energy-enhancing layer, the vertical-type hot carrier Triodes exhibit a good current saturation with current gain of 2.38 for both the common-base and common-emitter configurations. The mechanism of operation is proposed and examined by the basic electrical measurements.