The Experts below are selected from a list of 300 Experts worldwide ranked by ideXlab platform
Shengping Ruan - One of the best experts on this subject based on the ideXlab platform.
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enhanced performance of a tio2 Ultraviolet Detector modified with graphene oxide
RSC Advances, 2015Co-Authors: Dezhong Zhang, Fuyi Jing, Fengli Gao, Jingran Zhou, Liang Shen, Dongming Sun, Yu Chen, Shengping RuanAbstract:The performance of a Schottky metal–semiconductor–metal (MSM) Ultraviolet (UV) photoDetector is limited by the insufficient gain and the uncontrollable noise current. A remarkable detectivity UV Detector is demonstrated based on graphene oxide (GO) modified TiO2 with high gain and low noise. The GO layer completely prevents the flow of electrons forming a hole-only device thus decreasing the dark current and noise current. Furthermore, gain of the holes is promoted under UV illumination. Moreover, the GO layer efficiently extracts the holes therefore reducing the fall time. Under a bias of 6 V, the responsivity value reaches 826.8 A W−1 and the noise current is only 1.8 pA, thereby, our device provides a detectivity of 2.82 × 1013 cm Hz1/2 W−1 at 280 nm. The results offer an effective approach to enhance the performance of a UV Detector.
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Ultraviolet Detector based on tio2 nanowire array polymer hybrids with low dark current
Journal of Alloys and Compounds, 2015Co-Authors: Min Zhang, Jingran Zhou, Weiyou Chen, Shengping RuanAbstract:Abstract Highly ordered, vertically oriented TiO2 nanowires were successfully synthesized on SnO:F-coated glass by a low-temperature hydrothermal method. Hybrid Ultraviolet Detector was fabricated by spin-coating a thin layer of poly (9,9-dihexylfluorene) (PFH) on the TiO2 array. At 2 V reverse bias, the dark current of the Detector was as low as 1.9 nA. The devices show a large photo-to-dark current ratio of more than two orders of magnitude due to the low dark current, indicating the high sensitivity of the Detector. Under the irradiation of 330 nm UV light, a peak responsivity of 568 mA/W was achieved because of the large contact area between TiO2 NWs and PFH, which leads to efficient carrier separation and convenient charge transport between the two components.
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High performance Ultraviolet Detector based on TiO2/ZnO heterojunction
Journal of Alloys and Compounds, 2015Co-Authors: Dezhong Zhang, Fuyi Jing, Fengli Gao, Jingran Zhou, Shengping RuanAbstract:Abstract TiO 2 nanowires array is synthesized on the FTO via hydrothermal method, which is modified with ZnO prepared by using the crystallization method. The fabricated Ultraviolet Detector based on TiO 2 /ZnO heterojunction possesses high photoelectric performance evaluated by the photo-to-dark current ratio, which has been demonstrated to reach 4 orders of magnitude. The separation of electron–hole pairs is facilitated by the built-in electric field in heterojunction, resulting in a large photocurrent as well as a high responsivity, which can attain 150 A/W. Compared with the pure TiO 2 device, The red shift in both absorption spectrum and photo response provides a potential application for the TiO 2 /ZnO device.
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Ultraviolet Detector based on TiO2 nanowire array–polymer hybrids with low dark current
Journal of Alloys and Compounds, 2015Co-Authors: Min Zhang, Jingran Zhou, Weiyou Chen, Shengping RuanAbstract:Abstract Highly ordered, vertically oriented TiO2 nanowires were successfully synthesized on SnO:F-coated glass by a low-temperature hydrothermal method. Hybrid Ultraviolet Detector was fabricated by spin-coating a thin layer of poly (9,9-dihexylfluorene) (PFH) on the TiO2 array. At 2 V reverse bias, the dark current of the Detector was as low as 1.9 nA. The devices show a large photo-to-dark current ratio of more than two orders of magnitude due to the low dark current, indicating the high sensitivity of the Detector. Under the irradiation of 330 nm UV light, a peak responsivity of 568 mA/W was achieved because of the large contact area between TiO2 NWs and PFH, which leads to efficient carrier separation and convenient charge transport between the two components.
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tio2 Ultraviolet Detector based on laalo3 substrate with low dark current
Journal of Alloys and Compounds, 2013Co-Authors: Min Zhang, Yu Chen, Caixia Liu, Guohua Liu, Shanpeng Wen, Shengping RuanAbstract:Abstract In this letter, metal–semiconductor–metal (MSM) Ultraviolet TiO 2 photoDetectors based on LaAlO 3 substrate were fabricated. TiO 2 nano-film was prepared via a sol–gel method, and then was spin-coated on single crystal LaAlO 3 substrate. Pt interdigitated electrodes were deposited on the top of TiO 2 film. At 5 V bias, the dark current of the Detector was only 50 pA, which is much lower than TiO 2 -based Detector. When irradiated by 270 nm UV light, a high photoresponse of the device was obtained. The ratio of photocurrent to dark current was nearly 5 orders, which is much higher than other photoDetectors based on TiO 2 reported. The rise and fall time of the Detector were 550 ms and 380 ms, respectively. The very low dark current and high sensitivity demonstrate the excellent application of the device in UV photoelectric detection.
Min Zhang - One of the best experts on this subject based on the ideXlab platform.
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Ultraviolet Detector based on tio2 nanowire array polymer hybrids with low dark current
Journal of Alloys and Compounds, 2015Co-Authors: Min Zhang, Jingran Zhou, Weiyou Chen, Shengping RuanAbstract:Abstract Highly ordered, vertically oriented TiO2 nanowires were successfully synthesized on SnO:F-coated glass by a low-temperature hydrothermal method. Hybrid Ultraviolet Detector was fabricated by spin-coating a thin layer of poly (9,9-dihexylfluorene) (PFH) on the TiO2 array. At 2 V reverse bias, the dark current of the Detector was as low as 1.9 nA. The devices show a large photo-to-dark current ratio of more than two orders of magnitude due to the low dark current, indicating the high sensitivity of the Detector. Under the irradiation of 330 nm UV light, a peak responsivity of 568 mA/W was achieved because of the large contact area between TiO2 NWs and PFH, which leads to efficient carrier separation and convenient charge transport between the two components.
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Ultraviolet Detector based on TiO2 nanowire array–polymer hybrids with low dark current
Journal of Alloys and Compounds, 2015Co-Authors: Min Zhang, Jingran Zhou, Weiyou Chen, Shengping RuanAbstract:Abstract Highly ordered, vertically oriented TiO2 nanowires were successfully synthesized on SnO:F-coated glass by a low-temperature hydrothermal method. Hybrid Ultraviolet Detector was fabricated by spin-coating a thin layer of poly (9,9-dihexylfluorene) (PFH) on the TiO2 array. At 2 V reverse bias, the dark current of the Detector was as low as 1.9 nA. The devices show a large photo-to-dark current ratio of more than two orders of magnitude due to the low dark current, indicating the high sensitivity of the Detector. Under the irradiation of 330 nm UV light, a peak responsivity of 568 mA/W was achieved because of the large contact area between TiO2 NWs and PFH, which leads to efficient carrier separation and convenient charge transport between the two components.
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tio2 Ultraviolet Detector based on laalo3 substrate with low dark current
Journal of Alloys and Compounds, 2013Co-Authors: Min Zhang, Yu Chen, Caixia Liu, Guohua Liu, Shanpeng Wen, Shengping RuanAbstract:Abstract In this letter, metal–semiconductor–metal (MSM) Ultraviolet TiO 2 photoDetectors based on LaAlO 3 substrate were fabricated. TiO 2 nano-film was prepared via a sol–gel method, and then was spin-coated on single crystal LaAlO 3 substrate. Pt interdigitated electrodes were deposited on the top of TiO 2 film. At 5 V bias, the dark current of the Detector was only 50 pA, which is much lower than TiO 2 -based Detector. When irradiated by 270 nm UV light, a high photoresponse of the device was obtained. The ratio of photocurrent to dark current was nearly 5 orders, which is much higher than other photoDetectors based on TiO 2 reported. The rise and fall time of the Detector were 550 ms and 380 ms, respectively. The very low dark current and high sensitivity demonstrate the excellent application of the device in UV photoelectric detection.
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schottky diode Ultraviolet Detector based on hbox tio _ 2 nanowire array
IEEE Electron Device Letters, 2012Co-Authors: Haifeng Zhang, Shengping Ruan, Min Zhang, Caihui Feng, Weiyou ChenAbstract:In this letter, a Schottky diode Ultraviolet (UV) Detector based on TiO2 nanowire (NW) array with Ag electrode is fabricated. The TiO2 NW array was prepared via a low-temperature hydrothermal method and characterized by means of X-ray diffraction, scanning electron microscope, and XPS. The Schottky barrier character of Ag/TiO2 contact was researched in detail. At -5-V bias, the dark current of the Detector was less than 35 nA. Under the irradiation of 350-nm UV light, a high responsivity of 3.1 A/W was achieved due to the internal gain. The Schottky diode Detector with simple fabrication process, low cost, and superior performance would provide a new way in fabricating UV imaging arrays.
Jingran Zhou - One of the best experts on this subject based on the ideXlab platform.
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enhanced performance of a tio2 Ultraviolet Detector modified with graphene oxide
RSC Advances, 2015Co-Authors: Dezhong Zhang, Fuyi Jing, Fengli Gao, Jingran Zhou, Liang Shen, Dongming Sun, Yu Chen, Shengping RuanAbstract:The performance of a Schottky metal–semiconductor–metal (MSM) Ultraviolet (UV) photoDetector is limited by the insufficient gain and the uncontrollable noise current. A remarkable detectivity UV Detector is demonstrated based on graphene oxide (GO) modified TiO2 with high gain and low noise. The GO layer completely prevents the flow of electrons forming a hole-only device thus decreasing the dark current and noise current. Furthermore, gain of the holes is promoted under UV illumination. Moreover, the GO layer efficiently extracts the holes therefore reducing the fall time. Under a bias of 6 V, the responsivity value reaches 826.8 A W−1 and the noise current is only 1.8 pA, thereby, our device provides a detectivity of 2.82 × 1013 cm Hz1/2 W−1 at 280 nm. The results offer an effective approach to enhance the performance of a UV Detector.
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Ultraviolet Detector based on tio2 nanowire array polymer hybrids with low dark current
Journal of Alloys and Compounds, 2015Co-Authors: Min Zhang, Jingran Zhou, Weiyou Chen, Shengping RuanAbstract:Abstract Highly ordered, vertically oriented TiO2 nanowires were successfully synthesized on SnO:F-coated glass by a low-temperature hydrothermal method. Hybrid Ultraviolet Detector was fabricated by spin-coating a thin layer of poly (9,9-dihexylfluorene) (PFH) on the TiO2 array. At 2 V reverse bias, the dark current of the Detector was as low as 1.9 nA. The devices show a large photo-to-dark current ratio of more than two orders of magnitude due to the low dark current, indicating the high sensitivity of the Detector. Under the irradiation of 330 nm UV light, a peak responsivity of 568 mA/W was achieved because of the large contact area between TiO2 NWs and PFH, which leads to efficient carrier separation and convenient charge transport between the two components.
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High performance Ultraviolet Detector based on TiO2/ZnO heterojunction
Journal of Alloys and Compounds, 2015Co-Authors: Dezhong Zhang, Fuyi Jing, Fengli Gao, Jingran Zhou, Shengping RuanAbstract:Abstract TiO 2 nanowires array is synthesized on the FTO via hydrothermal method, which is modified with ZnO prepared by using the crystallization method. The fabricated Ultraviolet Detector based on TiO 2 /ZnO heterojunction possesses high photoelectric performance evaluated by the photo-to-dark current ratio, which has been demonstrated to reach 4 orders of magnitude. The separation of electron–hole pairs is facilitated by the built-in electric field in heterojunction, resulting in a large photocurrent as well as a high responsivity, which can attain 150 A/W. Compared with the pure TiO 2 device, The red shift in both absorption spectrum and photo response provides a potential application for the TiO 2 /ZnO device.
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Ultraviolet Detector based on TiO2 nanowire array–polymer hybrids with low dark current
Journal of Alloys and Compounds, 2015Co-Authors: Min Zhang, Jingran Zhou, Weiyou Chen, Shengping RuanAbstract:Abstract Highly ordered, vertically oriented TiO2 nanowires were successfully synthesized on SnO:F-coated glass by a low-temperature hydrothermal method. Hybrid Ultraviolet Detector was fabricated by spin-coating a thin layer of poly (9,9-dihexylfluorene) (PFH) on the TiO2 array. At 2 V reverse bias, the dark current of the Detector was as low as 1.9 nA. The devices show a large photo-to-dark current ratio of more than two orders of magnitude due to the low dark current, indicating the high sensitivity of the Detector. Under the irradiation of 330 nm UV light, a peak responsivity of 568 mA/W was achieved because of the large contact area between TiO2 NWs and PFH, which leads to efficient carrier separation and convenient charge transport between the two components.
Weiyou Chen - One of the best experts on this subject based on the ideXlab platform.
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Ultraviolet Detector based on tio2 nanowire array polymer hybrids with low dark current
Journal of Alloys and Compounds, 2015Co-Authors: Min Zhang, Jingran Zhou, Weiyou Chen, Shengping RuanAbstract:Abstract Highly ordered, vertically oriented TiO2 nanowires were successfully synthesized on SnO:F-coated glass by a low-temperature hydrothermal method. Hybrid Ultraviolet Detector was fabricated by spin-coating a thin layer of poly (9,9-dihexylfluorene) (PFH) on the TiO2 array. At 2 V reverse bias, the dark current of the Detector was as low as 1.9 nA. The devices show a large photo-to-dark current ratio of more than two orders of magnitude due to the low dark current, indicating the high sensitivity of the Detector. Under the irradiation of 330 nm UV light, a peak responsivity of 568 mA/W was achieved because of the large contact area between TiO2 NWs and PFH, which leads to efficient carrier separation and convenient charge transport between the two components.
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Ultraviolet Detector based on TiO2 nanowire array–polymer hybrids with low dark current
Journal of Alloys and Compounds, 2015Co-Authors: Min Zhang, Jingran Zhou, Weiyou Chen, Shengping RuanAbstract:Abstract Highly ordered, vertically oriented TiO2 nanowires were successfully synthesized on SnO:F-coated glass by a low-temperature hydrothermal method. Hybrid Ultraviolet Detector was fabricated by spin-coating a thin layer of poly (9,9-dihexylfluorene) (PFH) on the TiO2 array. At 2 V reverse bias, the dark current of the Detector was as low as 1.9 nA. The devices show a large photo-to-dark current ratio of more than two orders of magnitude due to the low dark current, indicating the high sensitivity of the Detector. Under the irradiation of 330 nm UV light, a peak responsivity of 568 mA/W was achieved because of the large contact area between TiO2 NWs and PFH, which leads to efficient carrier separation and convenient charge transport between the two components.
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schottky diode Ultraviolet Detector based on hbox tio _ 2 nanowire array
IEEE Electron Device Letters, 2012Co-Authors: Haifeng Zhang, Shengping Ruan, Min Zhang, Caihui Feng, Weiyou ChenAbstract:In this letter, a Schottky diode Ultraviolet (UV) Detector based on TiO2 nanowire (NW) array with Ag electrode is fabricated. The TiO2 NW array was prepared via a low-temperature hydrothermal method and characterized by means of X-ray diffraction, scanning electron microscope, and XPS. The Schottky barrier character of Ag/TiO2 contact was researched in detail. At -5-V bias, the dark current of the Detector was less than 35 nA. Under the irradiation of 350-nm UV light, a high responsivity of 3.1 A/W was achieved due to the internal gain. The Schottky diode Detector with simple fabrication process, low cost, and superior performance would provide a new way in fabricating UV imaging arrays.
K L Narasimhan - One of the best experts on this subject based on the ideXlab platform.
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high response organic visible blind Ultraviolet Detector
Applied Physics Letters, 2007Co-Authors: Debdutta Ray, K L NarasimhanAbstract:The authors demonstrate a high efficiency visible-blind Ultraviolet organic photoDetector with a response of 30mA∕W. The active layer is a blend of N,N′-diphenyl-N,N′-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′-diamine (TPD) and tris(8-hydroxyquinoline) aluminum (Alq3). The authors show that the spontaneous as well as the electric field induced carrier generation efficiencies in the blend are enhanced over its constituents. The spontaneous carrier generation efficiency measured from total carrier collection measurements is 30% in the blend. The photoluminescence of the blend shows an efficient energy transfer from the TPD to Alq3 molecule. The mobility-lifetime (μτ) product in the blend is 2.2×10−12cm2∕V. The μτ product is weakly dependent on temperature.
