The Experts below are selected from a list of 225 Experts worldwide ranked by ideXlab platform
Franco Cerrina - One of the best experts on this subject based on the ideXlab platform.
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The limits of patterning in X-Ray Lithography
MRS Proceedings, 2011Co-Authors: Franco CerrinaAbstract:We show how the imaging process in proximity X-Ray Lithography is capable of reaching the sub-100 nm range. However, The use of proximity X-Ray Lithography is dependent on the mask to form the correct image of the pattern. The joint development of electron beam Lithography patterning tools with high-placement accuracy, of a better understanding of the mask mechanical response and of new aligners, clearly indicates that the goal of using X-Ray Lithography for nanoLithography applications is reachable.
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Microfocusing optics for hard X-Rays fabricated by X-Ray Lithography
1995Co-Authors: Azalia A. Krasnoperova, Franco Cerrina, Zheng Chen, E. Difabrizio, Massimo Gentili, Efim GluskinAbstract:Lithographic techniques for fabrication of hard X-Ray Fresnel Zone Plates are discussed. Practical results achieved at the center for X-Ray Lithography of the University of Wisconsin-Madison are presented. Fabrication technology includes replication of an e-beam written master mask into a thick photoresist by synchrotron radiation X-Ray Lithography, and subsequent electroplating of a metal zone plate structure using photoresist pattern as a mold.
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Microfocusing optics for hard xrays fabricated by X-Ray Lithography
X-Ray Microbeam Technology and Applications, 1995Co-Authors: Azalia A. Krasnoperova, Franco Cerrina, Zheng Chen, Massimo Gentili, Enzo Di Fabrizio, Efim GluskinAbstract:Lithographic techniques for fabrication of hard X-Ray Fresnel zone plates are discussed. Practical results achieved at the Center for X-Ray Lithography of the University of Wisconsin- Madison are presented. Fabrication technology includes replication of an e-beam written master mask into a thick photoresist by synchrotron radiation X-Ray Lithography, and subsequent electroplating of a metal zone plate structure using photoresist pattern as a mold.© (1995) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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Updated system model for x‐ray Lithography
Journal of Vacuum Science & Technology B, 1994Co-Authors: Mumit Khan, L. Mohammad, Jiabei Xiao, Leonidas E. Ocola, Franco CerrinaAbstract:We present an updated global model for x‐ray Lithography based on realistic models for image formation, demonstrating how the extendibility of x‐ray Lithography is well in the nanometer range. We apply these models to define the most convenient spectral range for x‐ray Lithography manufacturing and the parameters of mirrors and filters to be used in an optimized beam line.
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The center for X-Ray Lithography facility status and beamlines development
Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment, 1994Co-Authors: G. M. Wells, E. L. Brodsky, Michael T. Reilly, James W. Taylor, Franco CerrinaAbstract:Abstract The University of Wisconsin-Madison Center for X-Ray Lithography (CXrL) is a national facility for basic and applied research in the field of X-Ray Lithography operating five beamlines dedicated to X-Ray Lithography at the University of Wisconsin-Madison Aladdin storage ring. In addition to the beamlines, support facilities for lithographic processing are available. A recent development program with ARPA and Motorola has led to a large increase in the processing and methological facilities available at CXrL. CXrL is in the process of upgrading several key aspects of the facility to accommodate the new equipment and research initiatives. A description of the facility upgrades and a summary of beamlines capabilities, research activities and support facilities is provided.
Juan R. Maldonado - One of the best experts on this subject based on the ideXlab platform.
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X-Ray Lithography
Microelectronic Engineering, 2016Co-Authors: Juan R. Maldonado, Martin C. PeckerarAbstract:In this article we provide a brief history of some of the world's major efforts in X-Ray Lithography. We discuss the limitations and advantages of this approach in a variety of applications. These include the printing of mask layers in very-large-scale integrated circuits, the manufacture of high aspect ratio structures as a kind of "micro-3D printer," and the possible use of the technique for imaging on non-planar surfaces. We conclude with a discussion of the potential future of the approach in microLithography.
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Prospects for granular X-Ray Lithography sources
Applications of Laser Plasma Radiation II, 1995Co-Authors: Juan R. MaldonadoAbstract:This paper describes the status of X-Ray sources suitable for granular X-Ray Lithography systems (systems that require low initial investment). The key factors that determine the feasibility of point sources utilizing X-Ray generation by heated plasmas (pinched gas, laser, x-pinch) will be described. In particular, the relationship between X-Ray source power, required device overlay, and wafer throughput requirements for a production worthy system will be presented. In addition, relevant issues concerning the suitability of the different X-Ray point source technologies for X-Ray Lithography applications will be discussed. Considerations for X-Ray collimators will be presented in an appendix.
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OVERVIEW OF X-Ray Lithography AT IBM STORAGE RING
1991Co-Authors: Juan R. MaldonadoAbstract:This paper dcscribcs the feasibility studies being conducted at IBM to USC X-Ray Lithography for production of high density silicon chips. The system approach to X-Ray Lithography adopted at IBM considering the interaction of all the components: X-Ray source! masks, resists, exposure tools, with the devices and processes is presented in this paper. In particular, the status of the Advanced I .ithography Facility which houses the electron storage ring X-Ray source procured by IBM from Oxford Instruments, is presented.
O. Tabata - One of the best experts on this subject based on the ideXlab platform.
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Validation of X-Ray Lithography and development simulation system for moving mask deep X-Ray Lithography
Journal of Microelectromechanical Systems, 2006Co-Authors: Y. Hirai, S. Hafizovic, N. Matsuzuka, J.g. Korvink, O. TabataAbstract:This paper presents a newly developed 3-Dimensional (3-D) simulation system for Moving Mask Deep X-Ray Lithography (M/sup 2/DXL) technique, and its validation. The simulation system named X-Ray Lithography Simulation System for 3-Dimensional Fabrication (X3D) is tailored to simulate a fabrication process of 3-D microstructures by M/sup 2/DXL. X3D consists of three modules: mask generation, exposure and resist development (hereafter development). The exposure module calculates a dose distribution in resist using an X-Ray mask pattern and its movement trajectory. The dose is then converted to a resist dissolution rate. The development module adopted the "Fast Marching Method" technique to calculate the 3-D dissolution process and resultant 3-D microstructures. This technique takes into account resist dissolution direction that is required by 3-D X-Ray Lithography simulation. The comparison between simulation results and measurements of "stairs-like" dose deposition pattern by M/sup 2/DXL showed that X3D correctly predicts the 3-D dissolution process of exposed PMMA.
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3D simulation system for moving mask deep X-Ray Lithography
MHS2003. Proceedings of 2003 International Symposium on Micromechatronics and Human Science (IEEE Cat. No.03TH8717), 2003Co-Authors: Y. Hirai, S. Hafizovic, N. Matsuzuka, J.g. Korvink, O. TabataAbstract:This paper presents a new 3-dimensional (3D) simulation system for moving mask deep X-Ray Lithography (M/sup 2/DXL) technique. The newly developed X-Ray Lithography simulation system named X-Ray Lithography simulation system for 3-dimensional fabrication (X3D) is tailored to simulate the fabrication process of 3D microstructures using the M/sup 2/DXL technique. We have adopted the fast marching method for the development module, and confirmed that X3D correctly predicts the 3D dissolution process of exposed PMMA. A general overview on the X3D, the new approach with the fast marching method to predict 3D microstructures, and the verification of the simulation result are presented.
Ye Tianchun - One of the best experts on this subject based on the ideXlab platform.
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Key technology of mask making for 50 nm X-Ray Lithography
Nuclear Techniques, 2020Co-Authors: Ye Tianchun, Zhang JufangAbstract:The X-Ray Lithography of 1 nm wavelength is a step Lithography. Compared to other next-generation Lithography alternatives, the X-Ray Lithography can improve resolution, depth of focus, and exposure field sizes simultaneously. Another key advantage is the low cost. As the most difficult part of the X-Ray Lithography, the mask making technology for 50 nm X-Ray Lithography was discussed in this paper.
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Synchrotron radiation X-Ray Lithography beamline design for 50nm resolution and below
Nuclear Techniques, 2020Co-Authors: Ye TianchunAbstract:Compared to other Next Generation Lithography ( NGL) techniques, X-Ray Lithography has many ad- vantages, such as large process latitude, high throughput, extremely long depth of focus, large exposure field sizes, and low cost, and the more important thing is that X-Ray Lithography technology is relatively mature. For 100 nm resolution synchrotron radiation X-Ray Lithography system, its wavelength is in the range of 0.7—1.0 nm; and when the resolution is below 50 nm, its wavelength should be in 0.2 nm to 0.4 nm. In this paper, the possibility of designing a 50 nm resolution X-Ray Lithography system for Beijing Synchrotron Radiation Facility 3B1A beamline is discussed.
J.r. Maldonado - One of the best experts on this subject based on the ideXlab platform.
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X-Ray Lithography-an overview
Proceedings of the IEEE, 1993Co-Authors: M.c. Peckerar, J.r. MaldonadoAbstract:The fundamentals of X-Ray Lithography are reviewed. Issues associated with resolution, wafer throughput, and process latitude are discussed. X-Ray Lithography is compared with other lithographic technologies; future advancements, such as X-Ray projection Lithography, are described. It is shown that the major barrier to the near-term success for X-Ray Lithography is the requirement for a defect-free one-to-one mask which satisfies the stringent image-placement needs of submicrometer patterning.
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Elastic deformation of x‐ray Lithography masks under external loadings
Journal of Vacuum Science & Technology B, 1991Co-Authors: A. C. Chen, S. N. Lalapet, J.r. MaldonadoAbstract:This paper describes the elastic deformation of x‐ray Lithography masks due to external loadings using finite element modeling. The design of the mask support structure is critical to achieve 0.25 μm device design rules, for which the mask contribution to the total overlay budget must be kept below 50 nm. Therefore the mask deformation due to external loads should be below 10 nm. Several three‐dimensional finite element models were constructed to simulate x‐ray Lithography masks under gravity loading and external in‐plane loading (an out‐of‐plane loading can be related to an equivalent in‐plane loading via the Poisson ratio of the material). A figure of merit was developed to evaluate the relative stiffness of mask support structures, and to guide future x‐ray Lithography mask designs.
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Overview of X-Ray Lithography at IBM using a compact storage ring
Conference Record of the 1991 IEEE Particle Accelerator Conference, 1991Co-Authors: J.r. MaldonadoAbstract:Feasibility studies being conducted of the use of X-Ray Lithography for the production of high-density silicon chips are discussed. The system approach to X-Ray Lithography adopted considers the interaction of all the components-X-Ray source, masks, resists, and exposure tools-with the devices and processes. In particular, the status of the Advanced Lithography Facility which houses the electron storage ring X-Ray source is presented.
