The Experts below are selected from a list of 1038 Experts worldwide ranked by ideXlab platform
Pt Lai - One of the best experts on this subject based on the ideXlab platform.
-
β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes
'AIP Publishing', 2016Co-Authors: Sheng T, Lx Qian, Wl Zhang, Xz Liu, Pt LaiAbstract:A four-terminal photodetector was fabricated on the (2⎯⎯⎯012¯01)-dominant β-Ga2O3 thin film which was deposited in a plasma-assisted molecular beam epitaxy system. The suitability of this film for solar-blind DUV detection was proved by its transmission spectra. Moreover, the device operating in a specific Voltage-current mode can accurately detect the DUV radiation both qualitatively and quantitatively. Accordingly, a dark/photo Voltage ratio of 15 was achieved, which is comparable to that of previously-reported β-Ga2O3 interdigital metal-semiconductor-metal photoconductor. More importantly, the aperture ratio of our proposed device exceeds 80%, nearly doubling that of the conventional interdigital metal-semiconductor-metal devices including photoconductor and Schottky-type photodiode, which can intensively benefit the detection efficiency. Furthermore, it was found the dark/photo Voltage ratio was nearly trebled with the assistance of two Zener diodes, and further enhancement can be expected by increasing the operating current and/or adopting Zener diodes with smaller Zener Voltage. Therefore, this work provides a promising alternative for solar-blind DUV detection.published_or_final_versio
-
β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes
AIP Publishing LLC, 2016Co-Authors: Lx Qian, Wl Zhang, Xz Liu, T. Sheng, Pt LaiAbstract:A four-terminal photodetector was fabricated on the ( 2 ¯ 01 )-dominant β-Ga2O3 thin film which was deposited in a plasma-assisted molecular beam epitaxy system. The suitability of this film for solar-blind DUV detection was proved by its transmission spectra. Moreover, the device operating in a specific Voltage-current mode can accurately detect the DUV radiation both qualitatively and quantitatively. Accordingly, a dark/photo Voltage ratio of 15 was achieved, which is comparable to that of previously-reported β-Ga2O3 interdigital metal-semiconductor-metal photoconductor. More importantly, the aperture ratio of our proposed device exceeds 80%, nearly doubling that of the conventional interdigital metal-semiconductor-metal devices including photoconductor and Schottky-type photodiode, which can intensively benefit the detection efficiency. Furthermore, it was found the dark/photo Voltage ratio was nearly trebled with the assistance of two Zener diodes, and further enhancement can be expected by increasing the operating current and/or adopting Zener diodes with smaller Zener Voltage. Therefore, this work provides a promising alternative for solar-blind DUV detection
Lx Qian - One of the best experts on this subject based on the ideXlab platform.
-
β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes
'AIP Publishing', 2016Co-Authors: Sheng T, Lx Qian, Wl Zhang, Xz Liu, Pt LaiAbstract:A four-terminal photodetector was fabricated on the (2⎯⎯⎯012¯01)-dominant β-Ga2O3 thin film which was deposited in a plasma-assisted molecular beam epitaxy system. The suitability of this film for solar-blind DUV detection was proved by its transmission spectra. Moreover, the device operating in a specific Voltage-current mode can accurately detect the DUV radiation both qualitatively and quantitatively. Accordingly, a dark/photo Voltage ratio of 15 was achieved, which is comparable to that of previously-reported β-Ga2O3 interdigital metal-semiconductor-metal photoconductor. More importantly, the aperture ratio of our proposed device exceeds 80%, nearly doubling that of the conventional interdigital metal-semiconductor-metal devices including photoconductor and Schottky-type photodiode, which can intensively benefit the detection efficiency. Furthermore, it was found the dark/photo Voltage ratio was nearly trebled with the assistance of two Zener diodes, and further enhancement can be expected by increasing the operating current and/or adopting Zener diodes with smaller Zener Voltage. Therefore, this work provides a promising alternative for solar-blind DUV detection.published_or_final_versio
-
β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes
AIP Publishing LLC, 2016Co-Authors: Lx Qian, Wl Zhang, Xz Liu, T. Sheng, Pt LaiAbstract:A four-terminal photodetector was fabricated on the ( 2 ¯ 01 )-dominant β-Ga2O3 thin film which was deposited in a plasma-assisted molecular beam epitaxy system. The suitability of this film for solar-blind DUV detection was proved by its transmission spectra. Moreover, the device operating in a specific Voltage-current mode can accurately detect the DUV radiation both qualitatively and quantitatively. Accordingly, a dark/photo Voltage ratio of 15 was achieved, which is comparable to that of previously-reported β-Ga2O3 interdigital metal-semiconductor-metal photoconductor. More importantly, the aperture ratio of our proposed device exceeds 80%, nearly doubling that of the conventional interdigital metal-semiconductor-metal devices including photoconductor and Schottky-type photodiode, which can intensively benefit the detection efficiency. Furthermore, it was found the dark/photo Voltage ratio was nearly trebled with the assistance of two Zener diodes, and further enhancement can be expected by increasing the operating current and/or adopting Zener diodes with smaller Zener Voltage. Therefore, this work provides a promising alternative for solar-blind DUV detection
Xz Liu - One of the best experts on this subject based on the ideXlab platform.
-
β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes
'AIP Publishing', 2016Co-Authors: Sheng T, Lx Qian, Wl Zhang, Xz Liu, Pt LaiAbstract:A four-terminal photodetector was fabricated on the (2⎯⎯⎯012¯01)-dominant β-Ga2O3 thin film which was deposited in a plasma-assisted molecular beam epitaxy system. The suitability of this film for solar-blind DUV detection was proved by its transmission spectra. Moreover, the device operating in a specific Voltage-current mode can accurately detect the DUV radiation both qualitatively and quantitatively. Accordingly, a dark/photo Voltage ratio of 15 was achieved, which is comparable to that of previously-reported β-Ga2O3 interdigital metal-semiconductor-metal photoconductor. More importantly, the aperture ratio of our proposed device exceeds 80%, nearly doubling that of the conventional interdigital metal-semiconductor-metal devices including photoconductor and Schottky-type photodiode, which can intensively benefit the detection efficiency. Furthermore, it was found the dark/photo Voltage ratio was nearly trebled with the assistance of two Zener diodes, and further enhancement can be expected by increasing the operating current and/or adopting Zener diodes with smaller Zener Voltage. Therefore, this work provides a promising alternative for solar-blind DUV detection.published_or_final_versio
-
β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes
AIP Publishing LLC, 2016Co-Authors: Lx Qian, Wl Zhang, Xz Liu, T. Sheng, Pt LaiAbstract:A four-terminal photodetector was fabricated on the ( 2 ¯ 01 )-dominant β-Ga2O3 thin film which was deposited in a plasma-assisted molecular beam epitaxy system. The suitability of this film for solar-blind DUV detection was proved by its transmission spectra. Moreover, the device operating in a specific Voltage-current mode can accurately detect the DUV radiation both qualitatively and quantitatively. Accordingly, a dark/photo Voltage ratio of 15 was achieved, which is comparable to that of previously-reported β-Ga2O3 interdigital metal-semiconductor-metal photoconductor. More importantly, the aperture ratio of our proposed device exceeds 80%, nearly doubling that of the conventional interdigital metal-semiconductor-metal devices including photoconductor and Schottky-type photodiode, which can intensively benefit the detection efficiency. Furthermore, it was found the dark/photo Voltage ratio was nearly trebled with the assistance of two Zener diodes, and further enhancement can be expected by increasing the operating current and/or adopting Zener diodes with smaller Zener Voltage. Therefore, this work provides a promising alternative for solar-blind DUV detection
Wl Zhang - One of the best experts on this subject based on the ideXlab platform.
-
β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes
'AIP Publishing', 2016Co-Authors: Sheng T, Lx Qian, Wl Zhang, Xz Liu, Pt LaiAbstract:A four-terminal photodetector was fabricated on the (2⎯⎯⎯012¯01)-dominant β-Ga2O3 thin film which was deposited in a plasma-assisted molecular beam epitaxy system. The suitability of this film for solar-blind DUV detection was proved by its transmission spectra. Moreover, the device operating in a specific Voltage-current mode can accurately detect the DUV radiation both qualitatively and quantitatively. Accordingly, a dark/photo Voltage ratio of 15 was achieved, which is comparable to that of previously-reported β-Ga2O3 interdigital metal-semiconductor-metal photoconductor. More importantly, the aperture ratio of our proposed device exceeds 80%, nearly doubling that of the conventional interdigital metal-semiconductor-metal devices including photoconductor and Schottky-type photodiode, which can intensively benefit the detection efficiency. Furthermore, it was found the dark/photo Voltage ratio was nearly trebled with the assistance of two Zener diodes, and further enhancement can be expected by increasing the operating current and/or adopting Zener diodes with smaller Zener Voltage. Therefore, this work provides a promising alternative for solar-blind DUV detection.published_or_final_versio
-
β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes
AIP Publishing LLC, 2016Co-Authors: Lx Qian, Wl Zhang, Xz Liu, T. Sheng, Pt LaiAbstract:A four-terminal photodetector was fabricated on the ( 2 ¯ 01 )-dominant β-Ga2O3 thin film which was deposited in a plasma-assisted molecular beam epitaxy system. The suitability of this film for solar-blind DUV detection was proved by its transmission spectra. Moreover, the device operating in a specific Voltage-current mode can accurately detect the DUV radiation both qualitatively and quantitatively. Accordingly, a dark/photo Voltage ratio of 15 was achieved, which is comparable to that of previously-reported β-Ga2O3 interdigital metal-semiconductor-metal photoconductor. More importantly, the aperture ratio of our proposed device exceeds 80%, nearly doubling that of the conventional interdigital metal-semiconductor-metal devices including photoconductor and Schottky-type photodiode, which can intensively benefit the detection efficiency. Furthermore, it was found the dark/photo Voltage ratio was nearly trebled with the assistance of two Zener diodes, and further enhancement can be expected by increasing the operating current and/or adopting Zener diodes with smaller Zener Voltage. Therefore, this work provides a promising alternative for solar-blind DUV detection
T Sakuraba - One of the best experts on this subject based on the ideXlab platform.
-
comparison of Zener Voltage standard calibrations at 10 v between the kriss and the etl
Conference on Precision Electromagnetic Measurements, 1997Co-Authors: Kyutae Kim, Y. Sakamoto, Kwon Soo Han, T SakurabaAbstract:In order to promote the improvement of the KRISS' 10 V calibration system a comparison of 10 V dc Voltage calibrations between the Korea Research Institute of Standards and Science (KRISS, Korea) and the Electrotechnical Laboratory (ETL, Japan) was conducted from Sept.-Oct. 1995. A commercial Zener Voltage standard was carried for the comparison. During the comparison an unexpected discrepancy was found and its origin was experimentally traced to find a correction value. After the correction was made, the result showed the two 10 V calibration systems, both of which are based on 10:1 divider and 1 V Josephson array were in a good agreement within an uncertainty of the comparison which was less than 0.1 x 10 -6 . Uncertainty of the KRISS system has been improved to be 0.022 x 10 -6 .
-
Comparison of Zener Voltage standard calibrations at 10 V between the KRISS and the ETL
IEEE Transactions on Instrumentation and Measurement, 1997Co-Authors: Kyutae Kim, Kwon Soo Han, Y. Sukamoto, T SakurabaAbstract:In order to promote the improvement of the KRISS' 10 V calibration system a comparison of 10 V dc Voltage calibrations between the Korea Research Institute of Standards and Science (KRISS, Korea) and the Electrotechnical Laboratory (ETL, Japan) was conducted from Sept.-Oct. 1995. A commercial Zener Voltage standard was carried for the comparison. During the comparison an unexpected discrepancy was found and its origin was experimentally traced to find a correction value. After the correction was made, the result showed the two 10 V calibration systems, both of which are based on 10:1 divider and 1 V Josephson array were in a good agreement within an uncertainty or the comparison which was less than 0.1/spl times/10/sup -6/. Uncertainty of the KRISS system has been improved to be 0.022/spl times/10/sup -6/.
