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Ar Plasma

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Xiaoming Ge – One of the best experts on this subject based on the ideXlab platform.

  • growth promotion of vertical graphene on sio2 si by Ar Plasma process in Plasma enhanced chemical vapor deposition
    RSC Advances, 2018
    Co-Authors: Zhiying Chen, Xiaoming Ge, Yanhui Zhang, Shike Hu, Yijian Liang

    Abstract:

    This study investigates the growth promotion of vertically oriented graphene in Plasma-enhanced chemical vapor deposition through Ar Plasma treatment. Combined with vArious substrate treatments, including hydrofluoric acid etching and oxidation after Ar Plasma treatment, Ar Plasma pretreatment promotes vertical growth through the microcavity on the rough substrate surface and the active growth sites. The microcavity affects the strain distribution and defects of as-deposited planAr films, which benefit the transition of 2D deposition to 3D vertical growth. A growth model on the effect of Ar Plasma pretreatment is proposed.

Zhiying Chen – One of the best experts on this subject based on the ideXlab platform.

  • growth promotion of vertical graphene on sio2 si by Ar Plasma process in Plasma enhanced chemical vapor deposition
    RSC Advances, 2018
    Co-Authors: Zhiying Chen, Xiaoming Ge, Yanhui Zhang, Shike Hu, Yijian Liang

    Abstract:

    This study investigates the growth promotion of vertically oriented graphene in Plasma-enhanced chemical vapor deposition through Ar Plasma treatment. Combined with vArious substrate treatments, including hydrofluoric acid etching and oxidation after Ar Plasma treatment, Ar Plasma pretreatment promotes vertical growth through the microcavity on the rough substrate surface and the active growth sites. The microcavity affects the strain distribution and defects of as-deposited planAr films, which benefit the transition of 2D deposition to 3D vertical growth. A growth model on the effect of Ar Plasma pretreatment is proposed.

  • Growth promotion of vertical graphene on SiO2/Si by Ar Plasma process in Plasma-enhanced chemical vapor deposition
    RSC Advances, 2018
    Co-Authors: Yanping Sui, Zhiying Chen, Yanhui Zhang, Yijian Liang, Songang Peng, Zhi Jin

    Abstract:

    This study investigates the growth promotion of vertically oriented graphene in Plasma-enhanced chemical vapor deposition through Ar Plasma treatment. Combined with vArious substrate treatments, including hydrofluoric acid etching and oxidation after Ar Plasma treatment, Ar Plasma pretreatment promotes vertical growth through the microcavity on the rough substrate surface and the active growth sites. The microcavity affects the strain distribution and defects of as-deposited planAr films, which benefit the transition of 2D deposition to 3D vertical growth. A growth model on the effect of Ar Plasma pretreatment is proposed.

Chang-il Kim – One of the best experts on this subject based on the ideXlab platform.

  • The dry etching of a sol–gel deposited ZnO thin film in a high density BCl3/Ar Plasma
    Thin Solid Films, 2010
    Co-Authors: Jong-chang Woo, Chang-il Kim

    Abstract:

    Abstract The etching chAracteristics of zinc oxide (ZnO) including the etch rate and the selectivity of ZnO in a BCl3/Ar Plasma were investigated. It was found that the ZnO etch rate showed a non-monotonic behavior with an increasing BCl3 fraction in the BCl3/Ar Plasma, along with the RF power, and gas pressure. At a BCl3 (80%)/Ar (20%) gas mixture, the maximum ZnO etch rate of 50.3 nm/min and the maximum etch selectivity of 0.75 for ZnO/Si were obtained. Plasma diagnostics done with a quadrupole mass spectrometer delivered the data on the ionic species composition in Plasma. Due to the relatively high volatility of the by-products formed during the etching by the BCl3/Ar Plasma, ion bombArdment in addition to physical sputtering was required to obtain the high ZnO etch rates. The chemical state of the etched surfaces was investigated with X-ray Photoelectron Spectroscopy (XPS). Inferred from this data, it was suggested that the ZnO etch mechanism was due to ion enhanced chemical etching.

  • Etching Properties of HfO2 Thin Films in Cl2/BCl3/Ar Plasma
    Ferroelectrics, 2009
    Co-Authors: Dong-pyo Kim, Gwan-ha Kim, Jong-chang Woo, Xue Yang, Chang-il Kim

    Abstract:

    In this study, we changed two input pArameters (pressure vs. gas mixing ratio, RF power and DC bias voltage) and then monitored the effect on HfO 2 etch rate and selectivity with Si 3 N 4 and SiO 2 . When the pressure was fixed at 5 mTorr, etch rate of HfO 2 decreased with increasing Cl 2 content from 0 to 30% in BCl 3 /Ar Plasma. At the conditions of 10 and 15 mTorr, the HfO 2 etch rate reached the maximum at 10% Cl 2 addition. As RF power and DC bias voltage increased in all ranges of pressure conditions, etch rates for HfO 2 showed increasing trends. The relative volume densities of radicals were monitored with optical emission spectroscopy (OES). The analysis of x-ray photoelectron spectroscopy (XPS) was cArried out to investigate the chemical reactions between the surfaces of HfO 2 and etch species. Based on experimental data, the ion-assisted chemical etching was proposed as the main etch mechanism for the HfO 2 thin films in Cl 2 /BCl 3 /Ar Plasma.

  • The Etching Properties of Al2O3 Thin Films in BCl3/Cl2/Ar Plasma
    Ferroelectrics, 2009
    Co-Authors: Xue-yang, Dong-pyo Kim, Gwan-ha Kim, Jong-chang Woo, Chang-il Kim

    Abstract:

    In this study, the etch mechanism of ALD deposited Al2O3 thin film was investigated in BCl3/Cl2/Ar Plasma. The experiments were performed by compAring etch rates and selectivity of Al2O3 over hArd mask materials (such as SiO2, and Si3N4) as function of the input Plasma pArameters such as gas mixing ratio, DC-bias voltage and RF power under fixed process pressure. The maximum etch rate was obtained at 115.75 nm/min under 5 mTorr, RF power 600 W, Cl2 10% was added to BCl3/Ar Plasma, and the highest etch selectivity was 1.17 over Si3N4 under the 10 mTorr process pressure, −50 V DC-bias voltage. We used the X-ray photoelectron spectroscopy (XPS) to investigate the chemical reactions on the etched surface.