The Experts below are selected from a list of 252 Experts worldwide ranked by ideXlab platform

Donald Winston - One of the best experts on this subject based on the ideXlab platform.

  • neon ion Beam Lithography nibl
    Nano Letters, 2011
    Co-Authors: Donald Winston, Huigao Duan, Vitor R. Manfrinato, Samuel M Nicaise, Lin Lee Cheong, David C Ferranti, Jeff Marshman, Shawn Mcvey, Lewis Stern, John Notte
    Abstract:

    Existing techniques for electron- and ion-Beam Lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report Lithography using neon ions with fluence <1 ion/nm2, ∼1000× more efficient than using 30 keV electrons, and resolution down to 7 nm half-pitch. This combination of resolution and exposure efficiency is expected to impact a wide array of fields that are dependent on Beam-based Lithography.

  • Metrology for electron-Beam Lithography and resist contrast at the sub-10 nm scale
    Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics: Materials Processing Measurement and Phenomena, 2010
    Co-Authors: Huigao Duan, B. M. Cord, Donald Winston, Vitor R. Manfrinato, Joel K. W. Yang, Karl K. Berggren
    Abstract:

    Exploring the resolution limit of electron-Beam Lithography is of great interest both scientifically and technologically. However, when electron-Beam Lithography approaches its resolution limit, imaging and metrology of the fabricated structures by using standard scanning electron microscopy become difficult. In this work, the authors adopted transmission-electron and atomic-force microscopies to improve the metrological accuracy and to analyze the resolution limit of electron-Beam Lithography. With these metrological methods, the authors found that sub-5 nm sparse features could be readily fabricated by electron-Beam Lithography, but dense 16 nm pitch structures were difficult to yield. Measurements of point- and line-spread functions suggested that the resolution in fabricating sub-10 nm half-pitch structures was primarily limited by the resist-development processes, meaning that the development rates depended on pattern density and/or length scale.

  • Scanning-helium-ion-Beam Lithography with hydrogen silsesquioxane resist
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2009
    Co-Authors: Donald Winston, B. M. Cord, D. C. Bell, W. F. Dinatale, L. A. Stern, M. K. Mondol, Michael T. Postek, András E. Vladár, B Ming, J. K. W. Yang
    Abstract:

    A scanning-helium-ion-Beam microscope is now commercially available. This microscope can be used to perform Lithography similar to, but of potentially higher resolution than, scanning electron-Beam Lithography. This article describes the control of this microscope for Lithography via Beam steering/blanking electronics and evaluates the high-resolution performance of scanning helium-ion-Beam Lithography. The authors found that sub-10nm-half-pitch patterning is feasible. They also measured a point-spread function that indicates a reduction in the micrometer-range proximity effect typical in electron-Beam Lithography.

A. Olziersky - One of the best experts on this subject based on the ideXlab platform.

  • Process simulation at electron Beam Lithography on different substrates
    Journal of Materials Processing Technology, 2007
    Co-Authors: Katia Vutova, G. M. Mladenov, Ioannis Raptis, A. Olziersky
    Abstract:

    In this paper a general description of Monte Carlo simulation algorithm for modelling of exposure and development processes in the case of electron Beam Lithography (EBL) is presented. Experimental results and data obtained through Monte Carlo and analytical computer simulation tools of exposure and development processes for electron Beam Lithography are compared and analyzed. Results show that the simulation tools used predict with good accuracy the critical dimensions in the range of 500 nm and the profiles of the developed patterns in the case of multilayer structure samples containing a YBCO type High Temperature Superconducting layer. © 2006 Elsevier B.V. All rights reserved.

Huigao Duan - One of the best experts on this subject based on the ideXlab platform.

  • neon ion Beam Lithography nibl
    Nano Letters, 2011
    Co-Authors: Donald Winston, Huigao Duan, Vitor R. Manfrinato, Samuel M Nicaise, Lin Lee Cheong, David C Ferranti, Jeff Marshman, Shawn Mcvey, Lewis Stern, John Notte
    Abstract:

    Existing techniques for electron- and ion-Beam Lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report Lithography using neon ions with fluence <1 ion/nm2, ∼1000× more efficient than using 30 keV electrons, and resolution down to 7 nm half-pitch. This combination of resolution and exposure efficiency is expected to impact a wide array of fields that are dependent on Beam-based Lithography.

  • Metrology for electron-Beam Lithography and resist contrast at the sub-10 nm scale
    Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics: Materials Processing Measurement and Phenomena, 2010
    Co-Authors: Huigao Duan, B. M. Cord, Donald Winston, Vitor R. Manfrinato, Joel K. W. Yang, Karl K. Berggren
    Abstract:

    Exploring the resolution limit of electron-Beam Lithography is of great interest both scientifically and technologically. However, when electron-Beam Lithography approaches its resolution limit, imaging and metrology of the fabricated structures by using standard scanning electron microscopy become difficult. In this work, the authors adopted transmission-electron and atomic-force microscopies to improve the metrological accuracy and to analyze the resolution limit of electron-Beam Lithography. With these metrological methods, the authors found that sub-5 nm sparse features could be readily fabricated by electron-Beam Lithography, but dense 16 nm pitch structures were difficult to yield. Measurements of point- and line-spread functions suggested that the resolution in fabricating sub-10 nm half-pitch structures was primarily limited by the resist-development processes, meaning that the development rates depended on pattern density and/or length scale.

Vitor R. Manfrinato - One of the best experts on this subject based on the ideXlab platform.

  • neon ion Beam Lithography nibl
    Nano Letters, 2011
    Co-Authors: Donald Winston, Huigao Duan, Vitor R. Manfrinato, Samuel M Nicaise, Lin Lee Cheong, David C Ferranti, Jeff Marshman, Shawn Mcvey, Lewis Stern, John Notte
    Abstract:

    Existing techniques for electron- and ion-Beam Lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report Lithography using neon ions with fluence <1 ion/nm2, ∼1000× more efficient than using 30 keV electrons, and resolution down to 7 nm half-pitch. This combination of resolution and exposure efficiency is expected to impact a wide array of fields that are dependent on Beam-based Lithography.

  • Metrology for electron-Beam Lithography and resist contrast at the sub-10 nm scale
    Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics: Materials Processing Measurement and Phenomena, 2010
    Co-Authors: Huigao Duan, B. M. Cord, Donald Winston, Vitor R. Manfrinato, Joel K. W. Yang, Karl K. Berggren
    Abstract:

    Exploring the resolution limit of electron-Beam Lithography is of great interest both scientifically and technologically. However, when electron-Beam Lithography approaches its resolution limit, imaging and metrology of the fabricated structures by using standard scanning electron microscopy become difficult. In this work, the authors adopted transmission-electron and atomic-force microscopies to improve the metrological accuracy and to analyze the resolution limit of electron-Beam Lithography. With these metrological methods, the authors found that sub-5 nm sparse features could be readily fabricated by electron-Beam Lithography, but dense 16 nm pitch structures were difficult to yield. Measurements of point- and line-spread functions suggested that the resolution in fabricating sub-10 nm half-pitch structures was primarily limited by the resist-development processes, meaning that the development rates depended on pattern density and/or length scale.

James Alexander Liddle - One of the best experts on this subject based on the ideXlab platform.

  • Patterning of membrane masks for projection e-Beam Lithography
    16th Annual BACUS Symposium on Photomask Technology and Management, 1996
    Co-Authors: Linus A. Fetter, James Alexander Liddle, C. Biddick, Myrtle I. Blakey, Milton L. Peabody, Anthony E. Novembre, Donald M. Tennant
    Abstract:

    A process for high-resolution patterning of the membrane- type masks used in the SCALPEL (SCattering with Angular Limitation in Projection Electron-Beam Lithography) Lithography system is described. SCALPEL is a 4X projection electron Beam Lithography tool with the potential to extend commercial lithographic capability well into the deep sub-micron range: the recently-completed SCALPEL proof- of-concept (SPOC) system has printed 0.08 micrometers lines in thick resist on Si. The details of the patterning process we currently employ and metrology results from the first series of masks are presented here. The SPOC mask blank consists of a segmented W-coated SiN (Si-rich) membrane, fabricated on a 4' Si wafer. The blank is patterned with 45 different test chips using a vector-scanned e-Beam Lithography tool. Metrology is performed on completed masks, and results from measurements of line-edge roughness, CD linearity, and pattern uniformity are presented. We examine the need for proximity effect correction of the pattern data, and compare the effect of correction on pattern data file size for a variety of mask technologies.

  • Projection electron‐Beam Lithography: A new approach
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
    Co-Authors: Steven D. Berger, J. M. Gibson, R. M. Camarda, Reginald C. Farrow, H. A. Huggins, J. S. Kraus, James Alexander Liddle
    Abstract:

    Projection electron‐Beam Lithography is potentially one of the most attractive techniques available. It offers high resolution, high throughput, and good overlay and registration characteristics. In this paper we discuss some new approaches which seem to offer solutions to problems associated with earlier systems.

  • Projection electron-Beam Lithography: A new approach
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
    Co-Authors: Steven D. Berger, J. M. Gibson, R. M. Camarda, Reginald C. Farrow, H. A. Huggins, J. S. Kraus, James Alexander Liddle
    Abstract:

    Projection electron‐Beam Lithography is potentially one of the most attractive techniques available. It offers high resolution, high throughput, and good overlay and registration characteristics. In this paper we discuss some new approaches which seem to offer solutions to problems associated with earlier systems.