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Bias Operation

The Experts below are selected from a list of 1266 Experts worldwide ranked by ideXlab platform

Weigang Li – 1st expert on this subject based on the ideXlab platform

  • high speed characteristics of uni traveling carrier photodiode under Bias free Operation
    IEEE Photonics Technology Letters, 2019
    Co-Authors: Yongqing Huang, Xiaofeng Duan, Weigang Li

    Abstract:

    In this letter, we have conducted experiments on a traditional uni-traveling carrier photodiode (UTC-PD) and a previously modified UTC-PD under the zero-Bias Operational condition and make a comparison between them. The experimental results demonstrate that the modified UTC-PD is benefit to high speed, and the 3-dB bandwidth can achieve 40 GHz even when the active diameter of ${14}~{\mu }\text{m}$ under the zero-Bias Operation. Besides, based on the modified UTC-PD structure, we make some improvements in the collector to restrain the trend in which the bandwidth attenuated by the increase of photocurrent under the zero Bias Operation.

  • High-Speed Characteristics of Uni-Traveling-Carrier Photodiode Under Bias-Free Operation
    IEEE Photonics Technology Letters, 2019
    Co-Authors: Yongqing Huang, Xiaofeng Duan, Weigang Li

    Abstract:

    In this letter, we have conducted experiments on a traditional uni-traveling carrier photodiode (UTC-PD) and a previously modified UTC-PD under the zero-Bias Operational condition and make a comparison between them. The experimental results demonstrate that the modified UTC-PD is benefit to high speed, and the 3-dB bandwidth can achieve 40 GHz even when the active diameter of 14 μm under the zero-Bias Operation. Besides, based on the modified UTC-PD structure, we make some improvements in the collector to restrain the trend in which the bandwidth attenuated by the increase of photocurrent under the zero Bias Operation.

W. Arfaoui – 2nd expert on this subject based on the ideXlab platform

  • A Novel HCI Reliability Model for RF/mmWave Applications in FDSOI Technology
    2020 IEEE International Reliability Physics Symposium (IRPS), 2020
    Co-Authors: W. Arfaoui, G. Bossu, A. Muhlhoff, D. Lipp, R. Manuwald, T. Chen, T. Nigam, M. Siddabathula

    Abstract:

    Although technology scaling to deep submicron enable higher degrees of semiconductor integration, highly integrated circuit have become increasingly sensitive to the slightest parameter drift. One of the main causes of parameter degradation in recent technologies is the Hot Carrier Injection (HCI), a progressive wear out phenomenon whose understanding and modeling has become mandatory in new CMOS nodes. Therefore, we present in this paper a new HCI reliability model for Fully Depleted Silicon On Insulator (FDSOI) MOSFETs which covers the RF/mmWave (Radiofrequency /millimeter wave) applications taking into account back Bias Operation.

  • 28nm UTBB FDSOI product reliability/performance trade-off optimization through body Bias Operation
    2015 IEEE International Reliability Physics Symposium, 2015
    Co-Authors: P. Mora, X. Federspiel, F. Cacho, V. Huard, W. Arfaoui

    Abstract:

    This paper demonstrates the tremendous advantage of body Biasing to set the best reliability/performance trade-off of electronic products. First, we review experiments performed on transistors, ring oscillators (RO) and CPU to quantify the impact of body Biasing on reliability and performances. Then, the full picture including power, speed and reliability is discussed to highlight the way to get optimized circuits for different activities. Finally, we show that a unique dynamic management of performance and reliability can be achieved through body Biasing Operation.

  • 28nm utbb fdsoi product reliability performance trade off optimization through body Bias Operation
    International Reliability Physics Symposium, 2015
    Co-Authors: P. Mora, X. Federspiel, F. Cacho, V. Huard, W. Arfaoui

    Abstract:

    This paper demonstrates the tremendous advantage of body Biasing to set the best reliability/performance trade-off of electronic products. First, we review experiments performed on transistors, ring oscillators (RO) and CPU to quantify the impact of body Biasing on reliability and performances. Then, the full picture including power, speed and reliability is discussed to highlight the way to get optimized circuits for different activities. Finally, we show that a unique dynamic management of performance and reliability can be achieved through body Biasing Operation.

Yongqing Huang – 3rd expert on this subject based on the ideXlab platform

  • high speed characteristics of uni traveling carrier photodiode under Bias free Operation
    IEEE Photonics Technology Letters, 2019
    Co-Authors: Yongqing Huang, Xiaofeng Duan, Weigang Li

    Abstract:

    In this letter, we have conducted experiments on a traditional uni-traveling carrier photodiode (UTC-PD) and a previously modified UTC-PD under the zero-Bias Operational condition and make a comparison between them. The experimental results demonstrate that the modified UTC-PD is benefit to high speed, and the 3-dB bandwidth can achieve 40 GHz even when the active diameter of ${14}~{\mu }\text{m}$ under the zero-Bias Operation. Besides, based on the modified UTC-PD structure, we make some improvements in the collector to restrain the trend in which the bandwidth attenuated by the increase of photocurrent under the zero Bias Operation.

  • High-Speed Characteristics of Uni-Traveling-Carrier Photodiode Under Bias-Free Operation
    IEEE Photonics Technology Letters, 2019
    Co-Authors: Yongqing Huang, Xiaofeng Duan, Weigang Li

    Abstract:

    In this letter, we have conducted experiments on a traditional uni-traveling carrier photodiode (UTC-PD) and a previously modified UTC-PD under the zero-Bias Operational condition and make a comparison between them. The experimental results demonstrate that the modified UTC-PD is benefit to high speed, and the 3-dB bandwidth can achieve 40 GHz even when the active diameter of 14 μm under the zero-Bias Operation. Besides, based on the modified UTC-PD structure, we make some improvements in the collector to restrain the trend in which the bandwidth attenuated by the increase of photocurrent under the zero Bias Operation.