The Experts below are selected from a list of 1305 Experts worldwide ranked by ideXlab platform
Dan Hagstedt - One of the best experts on this subject based on the ideXlab platform.
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IECON - Power Loss Analysis in a SiC/IGBT Propulsion Inverter Including Blanking Time, MOSFET’s Reverse Conduction and the Effect of Thermal Feedback Using a PMSM Model
IECON 2020 The 46th Annual Conference of the IEEE Industrial Electronics Society, 2020Co-Authors: Sepideh Amirpour, Torbjorn Thiringer, Dan HagstedtAbstract:This paper presents a comparison of power losses for two silicon carbide (SiC) and one silicon insulated gate bipolar transistor (Si IGBT) power modules in a three-phase inverter, when considering the effect of Blanking Time and the MOSFET’s reverse conduction. The total power losses versus different switching frequencies are also compared for the three inverters. The focus of this paper is to determine the influence of junction temperature and thermal feedback on the power loss calculation. The analysis shows that, without accounting for the thermal feedback, the loss levels are substantially underestimated, 11-15% on the conduction losses of the SiC inverters and up to 18% on the switching losses of the IGBT inverter. The data is derived at a chosen high torque, low speed operating point of a permanent magnet synchronous machine (PMSM). The operating point is considered as a worse operating condition from the power loss perspective.
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power loss analysis in a sic igbt propulsion inverter including Blanking Time mosfet s reverse conduction and the effect of thermal feedback using a pmsm model
Conference of the Industrial Electronics Society, 2020Co-Authors: Sepideh Amirpour, Torbjorn Thiringer, Dan HagstedtAbstract:This paper presents a comparison of power losses for two silicon carbide (SiC) and one silicon insulated gate bipolar transistor (Si IGBT) power modules in a three-phase inverter, when considering the effect of Blanking Time and the MOSFET’s reverse conduction. The total power losses versus different switching frequencies are also compared for the three inverters. The focus of this paper is to determine the influence of junction temperature and thermal feedback on the power loss calculation. The analysis shows that, without accounting for the thermal feedback, the loss levels are substantially underestimated, 11-15% on the conduction losses of the SiC inverters and up to 18% on the switching losses of the IGBT inverter. The data is derived at a chosen high torque, low speed operating point of a permanent magnet synchronous machine (PMSM). The operating point is considered as a worse operating condition from the power loss perspective.
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Energy Loss Analysis in a SiC/IGBT Propulsion Inverter over Drive Cycles Considering Blanking Time, MOSFET’s Reverse Conduction and the Effect of Thermal Feedback
2020 IEEE Energy Conversion Congress and Exposition (ECCE), 2020Co-Authors: Sepideh Amirpour, Torbjorn Thiringer, Dan HagstedtAbstract:This paper presents a comparison of power and energy losses for two silicon carbide (SiC) and one silicon insulated gate bipolar transistor (Si-IGBT) power modules in a three-phase inverter, when considering the effect of Blanking Time and the MOSFET’s reverse conduction. Two different drive cycles are chosen for the loss comparisons, the ECE-City manual and the Worldwide Harmonized Light Vehicles Test Cycle (WLTC). For the WLTC, the urban and highway phases are included. The focus of this paper is to determine the influence of the thermal feedback on the power loss calculation over the driving patterns. The analysis shows that, without accounting for the thermal feedback, the power loss levels are considerably underestimated, up to 1.5% on the conduction losses of the SiC inverters and up to 3% on the switching losses of the IGBT inverter over the ECE-City manual. Similarly, for the WLTC drive cycle, a loss increases up to 3.5% on the conduction losses of the SiC and up to 6% on the switching losses of the IGBT inverters are observed, when considering the thermal feedback. The data is derived at a chosen high torque, low speed operating point of a permanent magnet synchronous machine (PMSM) over the drive cycles. The operating point is considered as a worse operating condition from the power loss perspective.
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energy loss analysis in a sic igbt propulsion inverter over drive cycles considering Blanking Time mosfet s reverse conduction and the effect of thermal feedback
European Conference on Cognitive Ergonomics, 2020Co-Authors: Sepideh Amirpour, Torbjorn Thiringer, Dan HagstedtAbstract:This paper presents a comparison of power and energy losses for two silicon carbide (SiC) and one silicon insulated gate bipolar transistor (Si-IGBT) power modules in a three-phase inverter, when considering the effect of Blanking Time and the MOSFET’s reverse conduction. Two different drive cycles are chosen for the loss comparisons, the ECE-City manual and the Worldwide Harmonized Light Vehicles Test Cycle (WLTC). For the WLTC, the urban and highway phases are included. The focus of this paper is to determine the influence of the thermal feedback on the power loss calculation over the driving patterns. The analysis shows that, without accounting for the thermal feedback, the power loss levels are considerably underestimated, up to 1.5% on the conduction losses of the SiC inverters and up to 3% on the switching losses of the IGBT inverter over the ECE-City manual. Similarly, for the WLTC drive cycle, a loss increases up to 3.5% on the conduction losses of the SiC and up to 6% on the switching losses of the IGBT inverters are observed, when considering the thermal feedback. The data is derived at a chosen high torque, low speed operating point of a permanent magnet synchronous machine (PMSM) over the drive cycles. The operating point is considered as a worse operating condition from the power loss perspective.
Torbjorn Thiringer - One of the best experts on this subject based on the ideXlab platform.
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power loss analysis in a sic igbt propulsion inverter including Blanking Time mosfet s reverse conduction and the effect of thermal feedback using a pmsm model
Conference of the Industrial Electronics Society, 2020Co-Authors: Sepideh Amirpour, Torbjorn Thiringer, Dan HagstedtAbstract:This paper presents a comparison of power losses for two silicon carbide (SiC) and one silicon insulated gate bipolar transistor (Si IGBT) power modules in a three-phase inverter, when considering the effect of Blanking Time and the MOSFET’s reverse conduction. The total power losses versus different switching frequencies are also compared for the three inverters. The focus of this paper is to determine the influence of junction temperature and thermal feedback on the power loss calculation. The analysis shows that, without accounting for the thermal feedback, the loss levels are substantially underestimated, 11-15% on the conduction losses of the SiC inverters and up to 18% on the switching losses of the IGBT inverter. The data is derived at a chosen high torque, low speed operating point of a permanent magnet synchronous machine (PMSM). The operating point is considered as a worse operating condition from the power loss perspective.
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IECON - Power Loss Analysis in a SiC/IGBT Propulsion Inverter Including Blanking Time, MOSFET’s Reverse Conduction and the Effect of Thermal Feedback Using a PMSM Model
IECON 2020 The 46th Annual Conference of the IEEE Industrial Electronics Society, 2020Co-Authors: Sepideh Amirpour, Torbjorn Thiringer, Dan HagstedtAbstract:This paper presents a comparison of power losses for two silicon carbide (SiC) and one silicon insulated gate bipolar transistor (Si IGBT) power modules in a three-phase inverter, when considering the effect of Blanking Time and the MOSFET’s reverse conduction. The total power losses versus different switching frequencies are also compared for the three inverters. The focus of this paper is to determine the influence of junction temperature and thermal feedback on the power loss calculation. The analysis shows that, without accounting for the thermal feedback, the loss levels are substantially underestimated, 11-15% on the conduction losses of the SiC inverters and up to 18% on the switching losses of the IGBT inverter. The data is derived at a chosen high torque, low speed operating point of a permanent magnet synchronous machine (PMSM). The operating point is considered as a worse operating condition from the power loss perspective.
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Energy Loss Analysis in a SiC/IGBT Propulsion Inverter over Drive Cycles Considering Blanking Time, MOSFET’s Reverse Conduction and the Effect of Thermal Feedback
2020 IEEE Energy Conversion Congress and Exposition (ECCE), 2020Co-Authors: Sepideh Amirpour, Torbjorn Thiringer, Dan HagstedtAbstract:This paper presents a comparison of power and energy losses for two silicon carbide (SiC) and one silicon insulated gate bipolar transistor (Si-IGBT) power modules in a three-phase inverter, when considering the effect of Blanking Time and the MOSFET’s reverse conduction. Two different drive cycles are chosen for the loss comparisons, the ECE-City manual and the Worldwide Harmonized Light Vehicles Test Cycle (WLTC). For the WLTC, the urban and highway phases are included. The focus of this paper is to determine the influence of the thermal feedback on the power loss calculation over the driving patterns. The analysis shows that, without accounting for the thermal feedback, the power loss levels are considerably underestimated, up to 1.5% on the conduction losses of the SiC inverters and up to 3% on the switching losses of the IGBT inverter over the ECE-City manual. Similarly, for the WLTC drive cycle, a loss increases up to 3.5% on the conduction losses of the SiC and up to 6% on the switching losses of the IGBT inverters are observed, when considering the thermal feedback. The data is derived at a chosen high torque, low speed operating point of a permanent magnet synchronous machine (PMSM) over the drive cycles. The operating point is considered as a worse operating condition from the power loss perspective.
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energy loss analysis in a sic igbt propulsion inverter over drive cycles considering Blanking Time mosfet s reverse conduction and the effect of thermal feedback
European Conference on Cognitive Ergonomics, 2020Co-Authors: Sepideh Amirpour, Torbjorn Thiringer, Dan HagstedtAbstract:This paper presents a comparison of power and energy losses for two silicon carbide (SiC) and one silicon insulated gate bipolar transistor (Si-IGBT) power modules in a three-phase inverter, when considering the effect of Blanking Time and the MOSFET’s reverse conduction. Two different drive cycles are chosen for the loss comparisons, the ECE-City manual and the Worldwide Harmonized Light Vehicles Test Cycle (WLTC). For the WLTC, the urban and highway phases are included. The focus of this paper is to determine the influence of the thermal feedback on the power loss calculation over the driving patterns. The analysis shows that, without accounting for the thermal feedback, the power loss levels are considerably underestimated, up to 1.5% on the conduction losses of the SiC inverters and up to 3% on the switching losses of the IGBT inverter over the ECE-City manual. Similarly, for the WLTC drive cycle, a loss increases up to 3.5% on the conduction losses of the SiC and up to 6% on the switching losses of the IGBT inverters are observed, when considering the thermal feedback. The data is derived at a chosen high torque, low speed operating point of a permanent magnet synchronous machine (PMSM) over the drive cycles. The operating point is considered as a worse operating condition from the power loss perspective.
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energy efficiency of a sic mosfet propulsion inverter accounting for the mosfet s reverse conduction and the Blanking Time
European Conference on Power Electronics and Applications, 2017Co-Authors: Alessandro Acquaviva, Torbjorn ThiringerAbstract:MOSFET devices have a body diode that allows reverse conduction, additionally, when a negative drain-source voltage is present, the MOSFET channel conduction can also be controlled by applying a gate-source voltage above the threshold voltage level. In a three phase inverter this results in parallel conduction of the diode and MOSFET when voltage and current differ in sign. This paper analyzes the beneficial effect of parallel operation of the two devices, taking into account the Blanking Time, on the conduction losses and total efficiency for a three phase SiC MOSFET inverter for traction application in electrified vehicles. The losses of the inverter are derived and presented as an analytical expression and compared with a numerical implementation showing a perfect match of the two. The total losses and efficiency of the inverter are derived and analyzed with and without reverse conduction for different operating points.
A Ferreres - One of the best experts on this subject based on the ideXlab platform.
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improving the reliability of series resonant inverters for induction heating applications
IEEE Transactions on Industrial Electronics, 2014Co-Authors: Vicente Esteve, J Jordan, E Sanchiskilders, E J Dede, E Maset, J B Ejea, A FerreresAbstract:This paper analyzes a high-power (100-kW) high-frequency (50-kHz) voltage-fed inverter with a series resonant load circuit for industrial induction heating applications which is characterized by a full-bridge inverter composed of isolated-gate bipolar transistors and a new power control based on phase-shift (PS) control. This power control circuit incorporates a load-adaptive variable-frequency controller and automated Blanking Time management in order to allow the inverter to work in zero-voltage switching for all output power levels and load conditions. An important improvement of the inverter reliability is achieved by choosing an appropriate and novel switching sequence for the PS inverter. The results are verified experimentally using a prototype for induction hardening applications. A comparative study between the proposed and standard PS power control will be made.
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a comparative performance study of a 1200 v si and sic mosfet intrinsic diode on an induction heating inverter
IEEE Transactions on Power Electronics, 2014Co-Authors: J Jordan, Vicente Esteve, E Sanchiskilders, E J Dede, E Maset, J B Ejea, A FerreresAbstract:This paper presents a comparison of the behavior of the intrinsic diode of silicon (Si) and silicon carbide (SiC) MOSFETs. The study was done for 1200 V Si and SiC MOSFETs. The data sheet from manufacturers shows the characteristics of MOSFET' intrinsic diode when gate source voltage (VGS) is 0 V. There are applications where the MOSFET' intrinsic diode is used while VGS is different than 0 V. One of these applications is induction heating, where depending on the load and the regulation system, the diode can conduct a significant part of the inverter current. In most applications which use the MOSFET' intrinsic diode, the turn ON of the intrinsic diode happens at VGS = 0 V. After a Blanking Time, the MOSFET' gate is activated waiting for the direction change of current in the circuit. Therefore, most of the current through the MOSFET' intrinsic diode occurs with a VGS different of 0 V. This paper shows the direct output characterization of Si and SiC MOSFET' intrinsic diode under different gate voltages. The gate resistor (RG) is an important parameter of the characterization. Depending on the input capacitance of the Si or SiC MOSFET, different RG are needed. The turn-on and turn-off behaviors are obtained when RG is optimized for each Si and SiC MOSFET. This has result in the turn-off robustness of intrinsic diode with optimum RG. This paper presents a surprising result for the reverse characteristic of Si and SiC MOSFETs for the same current at different VGS. The technology of Si MOSFET has different behavior depending on the manufacturer. The technology of SiC MOSFET presents a very similar behavior to low-voltage Si MOSFETs.
Sepideh Amirpour - One of the best experts on this subject based on the ideXlab platform.
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IECON - Power Loss Analysis in a SiC/IGBT Propulsion Inverter Including Blanking Time, MOSFET’s Reverse Conduction and the Effect of Thermal Feedback Using a PMSM Model
IECON 2020 The 46th Annual Conference of the IEEE Industrial Electronics Society, 2020Co-Authors: Sepideh Amirpour, Torbjorn Thiringer, Dan HagstedtAbstract:This paper presents a comparison of power losses for two silicon carbide (SiC) and one silicon insulated gate bipolar transistor (Si IGBT) power modules in a three-phase inverter, when considering the effect of Blanking Time and the MOSFET’s reverse conduction. The total power losses versus different switching frequencies are also compared for the three inverters. The focus of this paper is to determine the influence of junction temperature and thermal feedback on the power loss calculation. The analysis shows that, without accounting for the thermal feedback, the loss levels are substantially underestimated, 11-15% on the conduction losses of the SiC inverters and up to 18% on the switching losses of the IGBT inverter. The data is derived at a chosen high torque, low speed operating point of a permanent magnet synchronous machine (PMSM). The operating point is considered as a worse operating condition from the power loss perspective.
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power loss analysis in a sic igbt propulsion inverter including Blanking Time mosfet s reverse conduction and the effect of thermal feedback using a pmsm model
Conference of the Industrial Electronics Society, 2020Co-Authors: Sepideh Amirpour, Torbjorn Thiringer, Dan HagstedtAbstract:This paper presents a comparison of power losses for two silicon carbide (SiC) and one silicon insulated gate bipolar transistor (Si IGBT) power modules in a three-phase inverter, when considering the effect of Blanking Time and the MOSFET’s reverse conduction. The total power losses versus different switching frequencies are also compared for the three inverters. The focus of this paper is to determine the influence of junction temperature and thermal feedback on the power loss calculation. The analysis shows that, without accounting for the thermal feedback, the loss levels are substantially underestimated, 11-15% on the conduction losses of the SiC inverters and up to 18% on the switching losses of the IGBT inverter. The data is derived at a chosen high torque, low speed operating point of a permanent magnet synchronous machine (PMSM). The operating point is considered as a worse operating condition from the power loss perspective.
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Energy Loss Analysis in a SiC/IGBT Propulsion Inverter over Drive Cycles Considering Blanking Time, MOSFET’s Reverse Conduction and the Effect of Thermal Feedback
2020 IEEE Energy Conversion Congress and Exposition (ECCE), 2020Co-Authors: Sepideh Amirpour, Torbjorn Thiringer, Dan HagstedtAbstract:This paper presents a comparison of power and energy losses for two silicon carbide (SiC) and one silicon insulated gate bipolar transistor (Si-IGBT) power modules in a three-phase inverter, when considering the effect of Blanking Time and the MOSFET’s reverse conduction. Two different drive cycles are chosen for the loss comparisons, the ECE-City manual and the Worldwide Harmonized Light Vehicles Test Cycle (WLTC). For the WLTC, the urban and highway phases are included. The focus of this paper is to determine the influence of the thermal feedback on the power loss calculation over the driving patterns. The analysis shows that, without accounting for the thermal feedback, the power loss levels are considerably underestimated, up to 1.5% on the conduction losses of the SiC inverters and up to 3% on the switching losses of the IGBT inverter over the ECE-City manual. Similarly, for the WLTC drive cycle, a loss increases up to 3.5% on the conduction losses of the SiC and up to 6% on the switching losses of the IGBT inverters are observed, when considering the thermal feedback. The data is derived at a chosen high torque, low speed operating point of a permanent magnet synchronous machine (PMSM) over the drive cycles. The operating point is considered as a worse operating condition from the power loss perspective.
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energy loss analysis in a sic igbt propulsion inverter over drive cycles considering Blanking Time mosfet s reverse conduction and the effect of thermal feedback
European Conference on Cognitive Ergonomics, 2020Co-Authors: Sepideh Amirpour, Torbjorn Thiringer, Dan HagstedtAbstract:This paper presents a comparison of power and energy losses for two silicon carbide (SiC) and one silicon insulated gate bipolar transistor (Si-IGBT) power modules in a three-phase inverter, when considering the effect of Blanking Time and the MOSFET’s reverse conduction. Two different drive cycles are chosen for the loss comparisons, the ECE-City manual and the Worldwide Harmonized Light Vehicles Test Cycle (WLTC). For the WLTC, the urban and highway phases are included. The focus of this paper is to determine the influence of the thermal feedback on the power loss calculation over the driving patterns. The analysis shows that, without accounting for the thermal feedback, the power loss levels are considerably underestimated, up to 1.5% on the conduction losses of the SiC inverters and up to 3% on the switching losses of the IGBT inverter over the ECE-City manual. Similarly, for the WLTC drive cycle, a loss increases up to 3.5% on the conduction losses of the SiC and up to 6% on the switching losses of the IGBT inverters are observed, when considering the thermal feedback. The data is derived at a chosen high torque, low speed operating point of a permanent magnet synchronous machine (PMSM) over the drive cycles. The operating point is considered as a worse operating condition from the power loss perspective.
Riku Pöllänen - One of the best experts on this subject based on the ideXlab platform.
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Modeling and analysis of the dead-Time effects in parallel two-level voltage source inverters
2009 IEEE Energy Conversion Congress and Exposition, 2009Co-Authors: Toni Itkonen, J. Luukko, Riku PöllänenAbstract:A necessary Blanking-Time used to prevent a short circuit in the inverter phase leg, finite turn-on and turnoff Times of switching devices, and forward voltage drops of switching devices and anti-parallel diodes are known to cause load dependent distortion to inverter output voltages. The objective of this paper is to gain the understanding how the overall effects of the above-mentioned factors affect the circulating current generation between the parallel-connected two-level voltage source inverters. To meet this objective, a circulating current model taking these effects into account is developed. The model, which is an average model in nature, gives an analytical way to consider the significance of these effects to the circulating current generation. To verify the validity of the developed model, the circuit simulation results are shown and compared with the analytical results. The illustrations show that the results obtained with the developed model are in good agreement with the circuit simulations.
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Modeling and Analysis of the Dead-Time Effects in Parallel PWM Two-Level Three-Phase Voltage-Source Inverters
IEEE Transactions on Power Electronics, 2009Co-Authors: Toni Itkonen, J. Luukko, A. Sankala, Tommi Laakkonen, Riku PöllänenAbstract:This paper addresses modeling and analysis of the dead-Time effects in parallel pulsewidth-modulated (PWM) two-level three-phase inverters. The main objective is to gain understanding of how the effects caused by the necessary Blanking Time, the finite turn-on and turn-off Times of the switching devices, and the forward voltage drops of the switching devices and the antiparallel diodes, i.e., the dead-Time effects, influence the circulating current generation between the parallel-connected units. To meet this objective, a circulating current model taking these effects into account is developed for the parallel connection of n units. The model, which is an average model by nature, can be used to study the circulating current behavior with different types of PWM methods and to estimate the resulting circulating current values when there are differences in the dead-Time effect parameters. In other words, the model provides an analytical way to consider the significance of these effects. To verify the validity of the developed model, the circuit simulation and experimental results are shown and compared with the analytical results. The illustrations show that the results obtained with the developed model are in good agreement with the circuit simulations and the experiments.