The Experts below are selected from a list of 42081 Experts worldwide ranked by ideXlab platform
Fuzhi Wang - One of the best experts on this subject based on the ideXlab platform.
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high performance polymer solar cells with as prepared zirconium acetylacetonate film as cathode Buffer Layer
Scientific Reports, 2015Co-Authors: Shusheng Li, Fuzhi Wang, Deping Qian, Yongfang LiAbstract:Low-work-function active metals are commonly used as cathode in polymer solar cells (PSCs), but sensitivity of the active metals towards moisture and oxygen results in poor stability of the devices. Therefore, solution-proceessable and stable cathode Buffer Layer is of great importance for the application of PSCs. Here we demonstrate high performance PSCs by employing as-prepared zirconium acetylacetonate (a-ZrAcac) film spin-cast from its ethanol solution as cathode Buffer Layer. The PSCs based on a low bandgap polymer PBDTBDD as donor and PC60BM as acceptor with a-ZrAcac/Al cathode demonstrated an average power conversion efficiency (PCE) of 8.75% which is significantly improved than that of the devices with traditional Ca/Al cathode. The improved photovoltaic performance is benefitted from the decreased series resistance and enhanced light harvest of the PSCs with the a-ZrAcac/Al cathode. The results indicate that a-ZrAcac is a promising high performance cathode Buffer Layer for fabricating large area flexible PSCs.
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solution processed and low temperature annealed crox as anode Buffer Layer for efficient polymer solar cells
Journal of Physical Chemistry C, 2014Co-Authors: Fuzhi Wang, Zhanao TanAbstract:A simple but efficient method has been first developed for the solution preparation of CrOx as anode Buffer Layer for polymer photovoltaic cells. The chromium acetylacetonate precursor can be transformed into CrOx upon thermal annealing at ∼60 °C, followed by ultraviolet-ozone treatment. The leakage current of the device with the CrOx anode Buffer Layer was decreased, and short-circuit current density (Jsc) was significantly increased in comparison with the device with the traditional poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) Buffer Layer. By analyzing the current density–voltage characteristics of the device, it is found that the CrOx anode Buffer Layer can simultaneously decrease the series resistance and increase the parallel resistance of the device, in comparison with the device with PEDOT:PSS anode Buffer Layer. For the cells based on poly(3-hexylthiophene) (P3HT) as donor and (6,6)-phenyl-C61-butyric acid methyl ester (PCBM) as acceptor, the power conversion efficiency (...
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efficient polymer solar cells with a solution processed and thermal annealing free ruo2 anode Buffer Layer
Journal of Materials Chemistry, 2014Co-Authors: Fuzhi Wang, Zhanao Tan, Xuliang Hou, Gang Sun, Jianhui HouAbstract:A new method is developed to prepare RuO2 films through UVO treatment of solution-processed ruthenium(III) acetylacetonate (Ru(acac)3) without thermal annealing. By introducing RuO2 as an anode Buffer Layer, highly efficient polymer solar cells (PSCs) have been achieved. The resultant RuO2 Layer exhibits high light transmittance in the visible range. Remarkable improvements in the short-circuit current density (Jsc) of the PSCs can be achieved upon the introduction of the RuO2 Buffer Layer. The PSCs with the RuO2 anode Buffer Layer demonstrate improved photovoltaic performance in comparison with the devices using poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) as the anode Buffer Layer. The power conversion efficiency (PCE) of the PSCs based on P3HT:PCBM and P3HT:ICBA reaches as high as 4.19% and 7.07%, respectively. An even higher PCE of 7.45% is realized by adopting a new conjugated polymer, PBDTBDD, as the donor. The results demonstrate that RuO2 has great potential as a hole collection material for highly efficient PSCs.
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high performance polymer solar cells with solution processed and environmentally friendly cuox anode Buffer Layer
ACS Applied Materials & Interfaces, 2013Co-Authors: Fuzhi Wang, Zhanao Tan, Xuliang Hou, Gang Sun, Jianhui HouAbstract:Highly efficient polymer solar cells (PSCs) are demonstrated by introducing environmentally friendly CuOx as hole extraction anode Buffer Layer. The CuOx Buffer Layer is prepared simply via spin-coating 1,2-dichlorobenzene solution of Copper acetylacetonate on the ITO substrate and thermal transformation (at 80 °C) in air. Remarkable improvements in the open-circuit voltage (Voc) and short-circuit current density (Jsc) of the PSCs could be achieved upon the introduction of CuOx Buffer Layer. The study about the effect of CuOx interfacial Layer on the device resistances demonstrates that insertion of CuOx Layer can decrease the whole resistance of the PSCs. For the devices based on P3HT:PCBM, the power conversion efficiency (PCE) was increased from 2.8% (the reference device without Buffer Layer) to 4.1% via introduction of CuOx hole extraction Layer. The PCE of the PSC was further increased to 6.72% when ICBA used as an alternative acceptor to PCBM. The much higher PCE of 7.14% can be achieved by adopting...
Yongfang Li - One of the best experts on this subject based on the ideXlab platform.
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high performance polymer solar cells with as prepared zirconium acetylacetonate film as cathode Buffer Layer
Scientific Reports, 2015Co-Authors: Shusheng Li, Fuzhi Wang, Deping Qian, Yongfang LiAbstract:Low-work-function active metals are commonly used as cathode in polymer solar cells (PSCs), but sensitivity of the active metals towards moisture and oxygen results in poor stability of the devices. Therefore, solution-proceessable and stable cathode Buffer Layer is of great importance for the application of PSCs. Here we demonstrate high performance PSCs by employing as-prepared zirconium acetylacetonate (a-ZrAcac) film spin-cast from its ethanol solution as cathode Buffer Layer. The PSCs based on a low bandgap polymer PBDTBDD as donor and PC60BM as acceptor with a-ZrAcac/Al cathode demonstrated an average power conversion efficiency (PCE) of 8.75% which is significantly improved than that of the devices with traditional Ca/Al cathode. The improved photovoltaic performance is benefitted from the decreased series resistance and enhanced light harvest of the PSCs with the a-ZrAcac/Al cathode. The results indicate that a-ZrAcac is a promising high performance cathode Buffer Layer for fabricating large area flexible PSCs.
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solution processed tungsten oxide as an effective anode Buffer Layer for high performance polymer solar cells
Journal of Physical Chemistry C, 2012Co-Authors: Liangjie Li, Shusheng Li, Deping Qian, Yuqin Ding, Qi Xu, Yongfang LiAbstract:WO3 is an effective anode Buffer Layer to substitute PEDOT:PSS in both organic light-emitting diodes and polymer solar cells (PSCs). However, the vacuum deposition of the WO3 Layer is not compatible with low-cost solution-processing technology for the roll-to-roll fabrication of PSCs. Here, we report, for the first time, a solution-processed WO3 (s-WO3) anode Buffer Layer that was prepared by spin-coating tungsten(VI) isopropoxide solution on an ITO electrode and then thermal annealing at 150 °C for 10 min in air, for the application in PSCs. The s-WO3 Layer shows a high hole mobility of 9.4 × 10–3 cm2/V·s and high light transmittance. The photovoltaic performance of the Buffer Layer was investigated by fabricating the PSCs based on poly(3-hexylthiophene) (P3HT) as a donor and (6,6)-phenyl-C61-butyric acid methyl ester (PC60BM), (6,6)-phenyl-C71-butyric acid methyl ester (PC70BM), indene-C60 bisadduct (IC60BA), or indene-C70 bisadduct (IC70BA) as an acceptor. The PSCs with the s-WO3 anode Buffer Layer sho...
Hongjie Luo - One of the best experts on this subject based on the ideXlab platform.
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effects of a tio2 Buffer Layer on solution deposited vo2 films enhanced oxidization durability
Journal of Physical Chemistry C, 2010Co-Authors: Zongtao Zhang, Yanfeng Gao, Litao Kang, Hongjie LuoAbstract:In this article, thermochromic VO2 films were deposited on fused quartz and rutile TiO2-Buffered fused quartz substrates via a solution-phase process. The incorporation of a TiO2 Buffer Layer endures an enhanced oxidization durability of VO2 films under an environment with high oxygen partial pressures. Oxidization in furnace during a cooling stage and rapid thermal oxidization (RTO) treatments were employed to investigate the evolution of microstructures and compositions of the films in the gradual oxidization processes. Oxidization treatments transformed VO2 into V2O5 for films grown on fused quartz substrates, whereas the oxidation process was significantly hindered for films prepared on a TiO2 Buffer Layer, especially around the VO2/TiO2 interface. The phenomenon is first reported in this article and is important for practical applications.
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effects of a tio2 Buffer Layer on solution deposited vo2 films enhanced oxidization durability
Journal of Physical Chemistry C, 2010Co-Authors: Zongtao Zhang, Yanfeng Gao, Litao Kang, Hongjie LuoAbstract:In this article, thermochromic VO2 films were deposited on fused quartz and rutile TiO2-Buffered fused quartz substrates via a solution-phase process. The incorporation of a TiO2 Buffer Layer endur...
Hyounee Kim - One of the best experts on this subject based on the ideXlab platform.
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effects of lanthanum nitrate Buffer Layer on the orientation and piezoelectric property of pb zr ti o3 thick film
Journal of Materials Research, 2004Co-Authors: Jongjin Choi, Cheesung Park, Guntae Park, Jaewung Lee, Hyounee KimAbstract:Highly oriented Pb(Zr,Ti)O3 (PZT) films were deposited on Pt/Ti/SiO2/Si substrates by the sol-gel method using lanthanum nitrate as a Buffer Layer. When the lanthanum nitrate Buffer Layer was heat treated at temperatures between 450 and 550 °C, the PZT Layer coated onto this Buffer Layer showed a strong (100) preferred orientation. Regardless of the other deposition conditions, such as the pyrolysis temperature, pyrolysis time, annealing temperature and heating rate, the film deposited on the Buffer Layer had this orientation. Thick films were also fabricated using the sol-gel multi-coating method, and the (100) texture was found to be maintained up to a thickness of 10 μm. The ferroelectric hysteresis and piezoelectric coefficient (d33) of highly oriented PZT thick films were characterized, and the (100) oriented PZT film showed higher piezoelectric property than the (111) oriented film.
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growth of highly 100 oriented lead zirconate titanate films on silicon and glass substrates using lanthanum nitrate as a Buffer Layer
Applied Physics Letters, 2004Co-Authors: Jongjin Choi, Cheesung Park, Guntae Park, Hyounee KimAbstract:Highly oriented lead zirconate titanate [Pb(Zr,Ti)O3; PZT] thin films were deposited on Pt∕Ti∕SiO2∕Si and glass substrates by the sol-gel method using lanthanum nitrate as a Buffer Layer. When the lanthanum nitrate Buffer Layer was annealed at temperatures between 450 and 550°C, the PZT Layer coated onto this Buffer Layer showed strong (100) orientation. The film deposited on the Buffer Layer had this orientation, regardless of the other deposition conditions, such as the pyrolysis temperature, pyrolysis time, annealing temperature, and heating rate. The lanthanum nitrate Buffer Layer also acted as a very effective diffusion barrier against Pb–Si interdiffusion, thus allowing for the direct deposition of PZT films on Si, SiO2∕Si, and glass substrates. Using this Buffer Layer, highly oriented PZT film was fabricated stably and reproducibly, regardless of substrate material and the coating conditions. The nature of the lanthanum nitrate Buffer Layer and its role in the growth of the highly (100) oriented PZ...
Jongjin Choi - One of the best experts on this subject based on the ideXlab platform.
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low temperature preparation of dense gd ce o2 δ gd2o3 composite Buffer Layer by aerosol deposition for ysz electrolyte based sofc
International Journal of Hydrogen Energy, 2012Co-Authors: Jongjin Choi, Dongsoo Park, Byeonggeun Seong, Hongyoul BaeAbstract:Abstract The (Gd0.1Ce0.9)O2−δ (GDC)–Gd2O3 composite Buffer Layer was fabricated on yttria stabilized zirconia (YSZ) electrolyte by aerosol deposition for usage as diffusion barrier Layer between YSZ and (La0.6Sr0.4)(Co0.2Fe0.8)O3−δ (LSCF)–GDC composite cathode. The deposited composite Buffer Layer was quite dense in nature and effectively prevented the formation of SrZrO3 and La2Zr2O7 interLayer with low conductivity at the interfaces. The cell's I–V performance was enhanced with an increase in the GDC content in the composite Buffer Layer. The cell containing composite Buffer Layer showed maximum power density of up to 1.74 W/cm2 at 750 °C, which was ∼30% higher than that of the cell containing GDC Buffer Layer prepared using conventional process.
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effects of lanthanum nitrate Buffer Layer on the orientation and piezoelectric property of pb zr ti o3 thick film
Journal of Materials Research, 2004Co-Authors: Jongjin Choi, Cheesung Park, Guntae Park, Jaewung Lee, Hyounee KimAbstract:Highly oriented Pb(Zr,Ti)O3 (PZT) films were deposited on Pt/Ti/SiO2/Si substrates by the sol-gel method using lanthanum nitrate as a Buffer Layer. When the lanthanum nitrate Buffer Layer was heat treated at temperatures between 450 and 550 °C, the PZT Layer coated onto this Buffer Layer showed a strong (100) preferred orientation. Regardless of the other deposition conditions, such as the pyrolysis temperature, pyrolysis time, annealing temperature and heating rate, the film deposited on the Buffer Layer had this orientation. Thick films were also fabricated using the sol-gel multi-coating method, and the (100) texture was found to be maintained up to a thickness of 10 μm. The ferroelectric hysteresis and piezoelectric coefficient (d33) of highly oriented PZT thick films were characterized, and the (100) oriented PZT film showed higher piezoelectric property than the (111) oriented film.
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growth of highly 100 oriented lead zirconate titanate films on silicon and glass substrates using lanthanum nitrate as a Buffer Layer
Applied Physics Letters, 2004Co-Authors: Jongjin Choi, Cheesung Park, Guntae Park, Hyounee KimAbstract:Highly oriented lead zirconate titanate [Pb(Zr,Ti)O3; PZT] thin films were deposited on Pt∕Ti∕SiO2∕Si and glass substrates by the sol-gel method using lanthanum nitrate as a Buffer Layer. When the lanthanum nitrate Buffer Layer was annealed at temperatures between 450 and 550°C, the PZT Layer coated onto this Buffer Layer showed strong (100) orientation. The film deposited on the Buffer Layer had this orientation, regardless of the other deposition conditions, such as the pyrolysis temperature, pyrolysis time, annealing temperature, and heating rate. The lanthanum nitrate Buffer Layer also acted as a very effective diffusion barrier against Pb–Si interdiffusion, thus allowing for the direct deposition of PZT films on Si, SiO2∕Si, and glass substrates. Using this Buffer Layer, highly oriented PZT film was fabricated stably and reproducibly, regardless of substrate material and the coating conditions. The nature of the lanthanum nitrate Buffer Layer and its role in the growth of the highly (100) oriented PZ...
