The Experts below are selected from a list of 82671 Experts worldwide ranked by ideXlab platform

G. Bremond - One of the best experts on this subject based on the ideXlab platform.

  • Charge photo-Carrier Transport from silicon nanocrystals embedded in SiO2-based multilayer structures.
    Journal of Applied Physics, 2012
    Co-Authors: B. Dridi Rezgui, F. Gourbilleau, D. Maestre, Olivier Palais, A. Sibai, M. Lemiti, G. Bremond
    Abstract:

    Experimental investigation of photoconductivity in Si-rich silicon oxide (SRSO)/SiO2 multilayer (ML) structures prepared by magnetron reactive sputtering is reported. Photocurrent (PC) measurements show that the PC threshold increases with decreasing the thickness of SRSO layer. Photo-conduction processes in our samples are shown to be dominated by Carrier Transport through quantum-confined silicon nanocrystals embedded in the SiO2 host. In addition, the observed bias-dependence of photocurrent intensity is consistent with a model in which Carrier Transport occurs by both tunneling and hopping through defect states in the silicon oxide matrix.

  • Charge photo-Carrier Transport from silicon nanocrystals embedded in SiO 2 -based multilayer structures
    Journal of Applied Physics, 2012
    Co-Authors: B. Dridi Rezgui, F. Gourbilleau, D. Maestre, Olivier Palais, A. Sibai, M. Lemiti, G. Bremond
    Abstract:

    Experimental investigation of photoconductivity in Si-rich silicon oxide (SRSO)/SiO2 multilayer (ML) structures prepared by magnetron reactive sputtering is reported. Photocurrent (PC) measurements show that the PC threshold increases with decreasing the thickness of SRSO layer. Photo-conduction processes in our samples are shown to be dominated by Carrier Transport through quantum-confined silicon nanocrystals embedded in the SiO2 host. In addition, the observed bias-dependence of photocurrent intensity is consistent with a model in which Carrier Transport occurs by both tunneling and hopping through defect states in the silicon oxide matrix. A photocurrent density Jph of 1–2 mA cm−2 is extracted from our results. Although this photocurrent density along the ML absorber film is relatively low, the results presented in this work are believed to be a valuable contribution toward the implementation of all-Si tandem solar cells.

John E Bowers - One of the best experts on this subject based on the ideXlab platform.

  • Effects of Carrier Transport on injection efficiency and wavelength chirping in quantum-well lasers
    IEEE Journal of Quantum Electronics, 1993
    Co-Authors: Radhakrishnan L Nagarajan, John E Bowers
    Abstract:

    Using the steady-state solution to the Carrier Transport rate equation model for the quantum-well laser that they had previously proposed, the authors derive analytic expressions for the laser internal efficiency, Carrier injection efficiency, and wavelength chirping under current modulation and show that the various Carrier Transport times can have a significant effect on these quantities. They present experimental data and theoretical calculations that clearly demonstrate that, as in the case of device optimization for high-speed operation, one has to minimize the Transport time across the optical and current confinement regions and maximize the escape time out of the quantum-well active region in order to maximize the internal and the injection efficiencies and minimize the wavelength chirping. >

  • high speed quantum well lasers and Carrier Transport effects
    IEEE Journal of Quantum Electronics, 1992
    Co-Authors: Radhakrishnan L Nagarajan, M Ishikawa, Toru Fukushima, R S Geels, John E Bowers
    Abstract:

    Carrier Transport can significantly affect the high-speed properties of quantum-well lasers. The authors have developed a model and derived analytical expressions for the modulation response, resonance frequency, damping rate, and K factor to include these effects. They show theoretically and experimentally that Carrier Transport can lead to significant low-frequency parasitic-like rolloff that reduces the modulation response by as much as a factor of six in quantum-well lasers. They also show that, in addition, it leads to a reduction in the effective differential gain and thus the resonance frequency, while the nonlinear gain compression factor remains largely unaffected by it. The authors present the temperature dependence data for the K factor as further evidence for the effects of Carrier Transport. >

  • effects of Carrier Transport on relative intensity noise and critique of k factor predictions of modulation response
    Electronics Letters, 1992
    Co-Authors: Radhakrishnan L Nagarajan, M Ishikawa, John E Bowers
    Abstract:

    The maximum possible intrinsic modulation bandwidth in semiconductor lasers is conventionally written in terms of the K factor. Although this is often sufficient in bulk lasers, it is usually not true in quantum well lasers where Carrier Transport can significantly affect the high speed properties. Analytical expressions are presented, which include the effects of Carrier Transport, for the modulation response and the relative intensity noise in quantum well lasers. It is shown that in the presence of significant Transport effects, the K factor is not an accurate measure of the maximum possible intrinsic modulation bandwidth.

  • effects of Carrier Transport on high speed quantum well lasers
    Applied Physics Letters, 1991
    Co-Authors: Radhakrishnan L Nagarajan, Toru Fukushima, Scott W Corzine, John E Bowers
    Abstract:

    We present a model for the dynamic response of quantum well lasers which shows that the Carrier Transport across the separate confinement heterostructure region and the barriers can be critical in determining the modulation bandwidth. We also show that, depending on the particular quantum well laser structure, a large part of the experimentally measured reduction in modulation bandwidth is due to Transport factors.

C.l. Chen - One of the best experts on this subject based on the ideXlab platform.

  • Photoexcited-Carrier Transport in barium strontium titanate/strontium titanate heterostructures
    Journal of Applied Physics, 2017
    Co-Authors: Jianyuan Wang, Zhaoting Zhang, Bin Yang, C.l. Chen
    Abstract:

    Photoexcited-Carrier Transport properties at the surface and the interface of barium strontium titanate/strontium titanate heterostructures are reported. Under a 365 nm light irradiation, the surfaces of barium strontium titanate films exhibit a metal-to-insulator transition, while the interfaces favor the metallic conduction with increasing temperatures. By analyzing, we consider that these results might be attributed to the intrinsic features of strontium titanate and the polarization state of barium strontium titanate films under the irradiation. Our results would contribute to further understanding of the photoCarrier effect at the interface and demonstrate great potential applications in optoelectronic devices of all-oxide heterostructures.

B. Dridi Rezgui - One of the best experts on this subject based on the ideXlab platform.

  • Charge photo-Carrier Transport from silicon nanocrystals embedded in SiO2-based multilayer structures.
    Journal of Applied Physics, 2012
    Co-Authors: B. Dridi Rezgui, F. Gourbilleau, D. Maestre, Olivier Palais, A. Sibai, M. Lemiti, G. Bremond
    Abstract:

    Experimental investigation of photoconductivity in Si-rich silicon oxide (SRSO)/SiO2 multilayer (ML) structures prepared by magnetron reactive sputtering is reported. Photocurrent (PC) measurements show that the PC threshold increases with decreasing the thickness of SRSO layer. Photo-conduction processes in our samples are shown to be dominated by Carrier Transport through quantum-confined silicon nanocrystals embedded in the SiO2 host. In addition, the observed bias-dependence of photocurrent intensity is consistent with a model in which Carrier Transport occurs by both tunneling and hopping through defect states in the silicon oxide matrix.

  • Charge photo-Carrier Transport from silicon nanocrystals embedded in SiO 2 -based multilayer structures
    Journal of Applied Physics, 2012
    Co-Authors: B. Dridi Rezgui, F. Gourbilleau, D. Maestre, Olivier Palais, A. Sibai, M. Lemiti, G. Bremond
    Abstract:

    Experimental investigation of photoconductivity in Si-rich silicon oxide (SRSO)/SiO2 multilayer (ML) structures prepared by magnetron reactive sputtering is reported. Photocurrent (PC) measurements show that the PC threshold increases with decreasing the thickness of SRSO layer. Photo-conduction processes in our samples are shown to be dominated by Carrier Transport through quantum-confined silicon nanocrystals embedded in the SiO2 host. In addition, the observed bias-dependence of photocurrent intensity is consistent with a model in which Carrier Transport occurs by both tunneling and hopping through defect states in the silicon oxide matrix. A photocurrent density Jph of 1–2 mA cm−2 is extracted from our results. Although this photocurrent density along the ML absorber film is relatively low, the results presented in this work are believed to be a valuable contribution toward the implementation of all-Si tandem solar cells.

Shuang Tang - One of the best experts on this subject based on the ideXlab platform.

  • Extracting the Energy Sensitivity of Charge Carrier Transport and Scattering
    Scientific Reports, 2018
    Co-Authors: Shuang Tang
    Abstract:

    It is a challenge to extract the energy sensitivity of charge Carriers’ Transport and scattering from experimental data, although a theoretical estimation in which the existing scattering mechanism(s) are preliminarily assumed can be easily done. To tackle this problem, we have developed a method to experimentally determine the energy sensitivities, which can then serve as an important statistical measurement to further understand the collective behaviors of multi-Carrier Transport systems. This method is validated using a graphene system at different temperatures. Further, we demonstrate the application of this method to other two-dimensional (2D) materials as a guide for future experimental work on the optimization of materials performance for electronic components, Peltier coolers, thermoelectricity generators, thermocouples, thermopiles, electrical converters and other conductivity and/or Seebeck-effect-related sensors.