The Experts below are selected from a list of 4257 Experts worldwide ranked by ideXlab platform
Andre Anders - One of the best experts on this subject based on the ideXlab platform.
-
Asymmetric Injection of Cathodic Arc Plasma into a Macroparticle Filter Asymmetric Injection of Cathodic Arc Plasma into a Macroparticle Filter
2020Co-Authors: R.a. Macgill, Andre AndersAbstract:ABSTRACT The Cathodic Arc plasmas produced by cathode spots usually include macroparticles, which is undesirable for many applications. A common way of removing macroparticles is to use curved solenoid filters which guide the plasma from the source to the substrate. In this work, an Arc source with relatively small cathode is used, limiting the possible locations of plasma production. The relative position of Cathodic Arc source and macroparticle filtered was systematically varied and the filtered plasma current was recorded. It was found that axis-symmetric plasma injection leads to maximum throughput only if an anode aperture was used, which limited the plasma to near-axis flow by scraping off plasma at larger angles to the axis. When the anode aperture was removed, more plasma could enter the filter. In this case, maximum filtered ion current was achieved when the plasma was injected off-axis, namely offset in the direction where the filter is curved. Such behavior was anticipated because the plasma column in the filter is known to be shifted by ExB and centrifugal drift as well as by non-axissymmetric components of the magnetic field in the filter entrance and exit plane. The data have implications for plasma transport variations caused by different spot locations on cathodes that are not small compared to the filter cross section
-
Thin Solid Films High quality ZnO:Al transparent conducting oxide films synthesized by pulsed filtered Cathodic Arc deposition High quality ZnO:Al transparent conducting oxide films synthesized by pulsed filtered Cathodic Arc deposition
2020Co-Authors: Johanna Rosen, Mike Mcfarland, Jeff Brown, Andre Anders, Joakim Andersson, Sunnie H N LimAbstract:Abstract Aluminum-doped zinc oxide, ZnO:Al or AZO, is a well-known n-type transparent conducting oxide with great potential in a number of applications currently dominated by indium tin oxide (ITO). In this study, the optical and electrical properties of AZO thin films deposited on glass and silicon by pulsed filtered Cathodic Arc deposition are systematically studied. In contrast to magnetron sputtering, this technique does not produce energetic negative ions, and therefore ion damage can be minimized. The quality of the AZO films strongly depends on the growth temperature while only marginal improvements are obtained with post-deposition annealing. The best films, grown at a temperature of about 200°C, have resistivities in the low to mid 10 -4 Ω cm range with a transmittance better than 85% in the visible part of the spectrum. It is remarkable that relatively good films of small thickness (60 nm) can be fabricated using this method
-
transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered Cathodic Arc deposition
Applied Surface Science, 2013Co-Authors: Rueben J Mendelsberg, Andre AndersAbstract:Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered Cathodic Arc deposition (PFCAD). It is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 10-5 cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80percent from 500-1250 nm (including the glass substrate). These high quality pulsed Arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.
-
high quality zno al transparent conducting oxide films synthesized by pulsed filtered Cathodic Arc deposition
Thin Solid Films, 2010Co-Authors: Andre Anders, Johanna Rosen, K M Yu, Mike Mcfarland, Joakim Andersson, Jeff BrownAbstract:Aluminum-doped zinc oxide, ZnO:Al or AZO, is a well-known n-type transparent conducting oxide with great potential in a number of applications currently dominated by indium tin oxide. In this study, the optical and electrical properties of AZO thin films deposited on glass and silicon by pulsed filtered Cathodic Arc deposition are systematically studied. In contrast to magnetron sputtering, this technique does not produce energetic negative ions, and therefore ion damage can be minimized. The quality of the AZO films strongly depends on growth temperature while only marginal improvements are obtained with post-deposition annealing. The best films, grown at a temperature of about 200 degrees C, have resistivities in the low to mid 10(-4) Omega cm range with a transmittance better than 85% in the visible part of the spectrum. It is remarkable that relatively good films of small thickness (60 nm) can be fabricated using this method.
-
the structure and electron energy loss near edge structure of tungsten oxide thin films prepared by pulsed Cathodic Arc deposition and plasma assisted pulsed magnetron sputtering
Journal of Physics: Condensed Matter, 2008Co-Authors: Matthew R Field, D G Mcculloch, Andre Anders, V J Keast, R W BurgessAbstract:Author(s): Field, M. R.; McCulloch, D. G.; Lim, S. N. H.; Anders, A.; Keast, V. J.; Burgess, R. W. | Abstract: The microstructure and energy-loss near-edge structure (ELNES) of pulsed Cathodic Arc and pulsed magnetron sputtered WO3 thin films were investigated. It was found that the Cathodic Arc deposited material consisted of the alpha-WO3 phase with a high degree of crystallinity. In contrast, the magnetron sputtered material was highly disordered making it difficult to determine its phase. A self-consistent real space multiple scattering approach was used to calculate the NES of the various phases of WO3. Each phase was found to exhibit a unique NES allowing different phases of WO3 to be identified. The real space approach also allowed the origin of the main features in the NES to be investigated as the cluster size increased. The calculated NES for the room temperature gamma-WO3 was found to compare well to previous X-ray absorption spectra and to NES obtained by full-potential band structure calculation.
Johanna Rosen - One of the best experts on this subject based on the ideXlab platform.
-
Thin Solid Films High quality ZnO:Al transparent conducting oxide films synthesized by pulsed filtered Cathodic Arc deposition High quality ZnO:Al transparent conducting oxide films synthesized by pulsed filtered Cathodic Arc deposition
2020Co-Authors: Johanna Rosen, Mike Mcfarland, Jeff Brown, Andre Anders, Joakim Andersson, Sunnie H N LimAbstract:Abstract Aluminum-doped zinc oxide, ZnO:Al or AZO, is a well-known n-type transparent conducting oxide with great potential in a number of applications currently dominated by indium tin oxide (ITO). In this study, the optical and electrical properties of AZO thin films deposited on glass and silicon by pulsed filtered Cathodic Arc deposition are systematically studied. In contrast to magnetron sputtering, this technique does not produce energetic negative ions, and therefore ion damage can be minimized. The quality of the AZO films strongly depends on the growth temperature while only marginal improvements are obtained with post-deposition annealing. The best films, grown at a temperature of about 200°C, have resistivities in the low to mid 10 -4 Ω cm range with a transmittance better than 85% in the visible part of the spectrum. It is remarkable that relatively good films of small thickness (60 nm) can be fabricated using this method
-
filtered pulsed Cathodic Arc deposition of fullerene like carbon and carbon nitride films
Journal of Applied Physics, 2014Co-Authors: Mark D Tucker, Lars Hultman, Zsolt Czigany, Esteban Broitman, Larsake Naslund, Johanna RosenAbstract:Carbon and carbon nitride films (CNx, 0 ≤ x ≤ 0.26) were deposited by filtered pulsed Cathodic Arc and were investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. A “fullerene-like” (FL) structure of ordered graphitic planes, similar to that of magnetron sputtered FL-CNx films, was observed in films deposited at 175 °C and above, with N2 pressures of 0 and 0.5 mTorr. Higher substrate temperatures and significant nitrogen incorporation are required to produce similar FL structure by sputtering, which may, at least in part, be explained by the high ion charge states and ion energies characteristic of Arc deposition. A gradual transition from majority sp3-hybridized films to sp2 films was observed with increasing substrate temperature. High elastic recovery, an attractive characteristic mechanical property of FL-CNx films, is evident in Arc-deposited films both with and without nitrogen content, and both with and without FL structure.Carbon and carbon nitride films (CNx, 0 ≤ x ≤ 0.26) were deposited by filtered pulsed Cathodic Arc and were investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. A “fullerene-like” (FL) structure of ordered graphitic planes, similar to that of magnetron sputtered FL-CNx films, was observed in films deposited at 175 °C and above, with N2 pressures of 0 and 0.5 mTorr. Higher substrate temperatures and significant nitrogen incorporation are required to produce similar FL structure by sputtering, which may, at least in part, be explained by the high ion charge states and ion energies characteristic of Arc deposition. A gradual transition from majority sp3-hybridized films to sp2 films was observed with increasing substrate temperature. High elastic recovery, an attractive characteristic mechanical property of FL-CNx films, is evident in Arc-deposited films both with and without nitrogen content, and both with and without FL structure.
-
filtered pulsed Cathodic Arc deposition of fullerene like carbon and carbon nitride films
Journal of Applied Physics, 2014Co-Authors: Mark D Tucker, Lars Hultman, Zsolt Czigany, Esteban Broitman, Larsake Naslund, Johanna RosenAbstract:Carbon and carbon nitride films (CNx, 0 ≤ x ≤ 0.26) were deposited by filtered pulsed Cathodic Arc and were investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. A “fullerene-like” (FL) structure of ordered graphitic planes, similar to that of magnetron sputtered FL-CNx films, was observed in films deposited at 175 °C and above, with N2 pressures of 0 and 0.5 mTorr. Higher substrate temperatures and significant nitrogen incorporation are required to produce similar FL structure by sputtering, which may, at least in part, be explained by the high ion charge states and ion energies characteristic of Arc deposition. A gradual transition from majority sp3-hybridized films to sp2 films was observed with increasing substrate temperature. High elastic recovery, an attractive characteristic mechanical property of FL-CNx films, is evident in Arc-deposited films both with and without nitrogen content, and both with and without FL structure.
-
layer formation by resputtering in ti si c hard coatings during large scale Cathodic Arc deposition
Surface & Coatings Technology, 2011Co-Authors: Anders Eriksson, Jacob Sjolen, Jens Jensen, Mats Johansson, Lars Hultman, Naureen Ghafoor, Magnus Oden, Johanna RosenAbstract:Abstract This paper presents the physical mechanism behind the phenomenon of self-layering in thin films made by industrial scale Cathodic Arc deposition systems using compound Ti–Si–C cathodes and rotating substrate fixture. For the as-deposited films, electron microscopy and energy dispersive X-ray spectrometry reveals a trapezoid modulation in Si content in the substrate normal direction, with a period of 4 to 23 nm dependent on cathode configuration. This is caused by preferential resputtering of Si by the energetic deposition flux incident at high incidence angles, when the substrates are facing away from the cathodes. The Ti-rich sub-layers exhibit TiC grains with sizes up to 5 nm, while layers with high Si-content are less crystalline. The nanoindentation hardness of the films increases with decreasing layer thickness.
-
high quality zno al transparent conducting oxide films synthesized by pulsed filtered Cathodic Arc deposition
Thin Solid Films, 2010Co-Authors: Andre Anders, Johanna Rosen, K M Yu, Mike Mcfarland, Joakim Andersson, Jeff BrownAbstract:Aluminum-doped zinc oxide, ZnO:Al or AZO, is a well-known n-type transparent conducting oxide with great potential in a number of applications currently dominated by indium tin oxide. In this study, the optical and electrical properties of AZO thin films deposited on glass and silicon by pulsed filtered Cathodic Arc deposition are systematically studied. In contrast to magnetron sputtering, this technique does not produce energetic negative ions, and therefore ion damage can be minimized. The quality of the AZO films strongly depends on growth temperature while only marginal improvements are obtained with post-deposition annealing. The best films, grown at a temperature of about 200 degrees C, have resistivities in the low to mid 10(-4) Omega cm range with a transmittance better than 85% in the visible part of the spectrum. It is remarkable that relatively good films of small thickness (60 nm) can be fabricated using this method.
S. Anders - One of the best experts on this subject based on the ideXlab platform.
-
thermal stability of amorphous hard carbon films produced by Cathodic Arc deposition
Applied Physics Letters, 1997Co-Authors: S. Anders, Roger Yu Lo, Joel W. Ager, Javier Díaz, David B. BogyAbstract:The thermal stability of amorphous hard carbon films produced by Cathodic Arc deposition was studied by near edge x-ray absorption fine structure (NEXAFS) spectroscopy, Raman spectroscopy, and nanoindentation evaluation. Pure carbon films of up to 85% sp3 content were deposited using a pulsed biasing technique and annealed in ultrahigh vacuum up to 850 °C. NEXAFS spectra show no change in the film properties up to 700 °C, and a modification of the spectra for 800 and 850 °C, which indicate graphitization. Raman spectra show only a very slight change up to 850 °C. The nanoindentation data show no change in hardness and elastic modulus with annealing up to 850 °C. The study demonstrates the high thermal stability of the films. The difference in the NEXAFS and the Raman and nanoindentation results can be attributed to the surface sensitivity of NEXAFS in comparison to the more bulk sensitivity of Raman spectroscopy and nanoindentation.
-
multilayers of amorphous carbon prepared by Cathodic Arc deposition
Surface & Coatings Technology, 1997Co-Authors: S. Anders, Daniel L Callahan, Ting Y. Tsui, George M. Pharr, Singh C BhatiaAbstract:Filtered Cathodic Arc deposition is an effective technique for preparing amorphous hard carbon films of high quality. Pulsed biasing of the substrate leads to a variation of the ion energy. Therefore the film properties, which are influenced by the ion energy, can be changed over a wide range. Using an alternating high- and low-bias voltage, we have formed multilayers of hard and soft amorphous carbon films. The structure and mechanical properties of the multilayers were investigated by transmission electron microscopy and nanoindentation. They are discussed in relation to Monte Carlo computer simulations of the deposition process. It was found that the multilayer structure formation can be well predicted by the Monte Carlo computer code.
-
plasma distribution of Cathodic Arc deposition systems
Journal of Applied Physics, 1996Co-Authors: S. Anders, S Raoux, Kannan M. Krishnan, R.a. MacgillAbstract:The plasma distribution using a Cathodic Arc plasma source with and without magnetic macroparticle filter has been determined by depositing on a transparent plastic substrate and measuring the film absorption. It was found that the width of the distribution depends on the Arc current, and it also depends on the cathode material which leads to a spatial separation of the elements when an alloy cathode is used. By applying a magnetic multicusp field near the exit of the magnetic filter, it was possible to modify the plasma distribution and obtain a flat plasma profile with a constant and homogeneous elemental distribution which was demonstrated by depositing FeNd thin films.
-
hardness elastic modulus and structure of very hard carbon films produced by Cathodic Arc deposition with substrate pulse biasing
Applied Physics Letters, 1996Co-Authors: George M. Pharr, Daniel L Callahan, Singh C Bhatia, Shaun D Mcadams, Joel W. Ager, Andre Anders, Ting Y. Tsui, S. Anders, S R P SilvaAbstract:The hardness, elastic modulus, and structure of several amorphous carbon films on silicon prepared by Cathodic‐Arc deposition with substrate pulse biasing have been examined using nanoindentation, energy loss spectroscopy (EELS), and cross‐sectional transmission electron microscopy. EELS analysis shows that the highest sp3 contents (85%) and densities (3.00 g/cm3) are achieved at incident ion energies of around 120 eV. The hardness and elastic modulus of the films with the highest sp3 contents are at least 59 and 400 GPa, respectively. These values are conservative lower estimates due to substrate influences on the nanoindentation measurements. The films are predominantly amorphous with a ∼20 nm surface layer which is structurally different and softer than the bulk.
-
formation of metal oxides by Cathodic Arc deposition
Surface & Coatings Technology, 1995Co-Authors: S. Anders, M Rubin, S Raoux, Andre Anders, Z. Wang, F KongAbstract:Abstract Cathodic Arc deposition is an established and industrially applied technique for the formation of nitrides (e.g. TiN); it can also be used for metal oxide thin film formation. A Cathodic Arc plasma source with the desired cathode material is operated in an oxygen atmosphere of appropriate pressure, and metal oxides of various stoichiometric composition can be formed on different substrates. We report here on a series of experiments on metal oxide formation by Cathodic Arc deposition for different applications. Black copper oxide has been deposited on accelerator components to increase the radiative heat transfer between the parts. Various metal oxides such as tungsten oxide, niobium oxide, nickel oxide and vanadium oxide have been deposited on ITO glass to form electrochromic films for window applications. Optical waveguide structures can be formed by refractive index variation using oxide multilayers. We have synthesized multilayers of Al 2 O 3 -Y 2 O 3 -Al 2 O 3 -Si as possible basic structures for passive optoelectronic integrated circuits, and Al 2- x Er x O 3 thin films with a variable Er concentration which is a potential component layer for the production of active optoelectronic integrated devices such as amplifiers or lasers at a wavelength of 1.53 μm. Aluminum and chromium oxide films have been deposited on a number of substrates to impart improved corrosion resistance at high temperature. Titanium sub-oxides which are electrically conductive and corrosion resistant and stable in a number of aggressive environments have been deposited on various substrates. These sub-oxides are of great interest for use in electrochemical cells. Common features of all these depositions are the high deposition rate typical for Cathodic Arc deposition, the good adhesion of the films due to the high metal ion energy, and the advantage of an environmentally clean method in comparison to wet-chemical oxide formation techniques.
Dayung Wang - One of the best experts on this subject based on the ideXlab platform.
-
characterization of cr doped tio2 thin films prepared by Cathodic Arc plasma deposition
Surface & Coatings Technology, 2007Co-Authors: Muhsuan Chan, Wei-yu Ho, Dayung Wang, Fuhsing LuAbstract:Abstract Cr-doped TiO 2 thin films were prepared by co-sputtering of titanium and chromium in a Cathodic Arc plasma evaporation system. X-ray diffraction (XRD), Auger electron spectroscopy (AES), field emission scanning electron microscopy (FE-SEM), and water contact angle measurement were used to characterize obtained films. As-deposited pure titanium dioxide thin films possessed a mostly anatase structure while Cr-doped TiO 2 films was amorphous. After annealing at 450 °C for 3 h, amorphous Cr-doped TiO 2 films transformed to a mixed anatase (mostly) and rutile phase. Changes in the morphology and composition of the films were examined by FE-SEM and AES. Crystalline Cr-doped TiO 2 films became super-hydrophilic after 20 min of exposure under visible light illumination, indicating that the absorption edge shifted from an ultraviolet region for TiO 2 to a visible light range for annealed Cr-doped TiO 2 films, which is further confirmed by UV–visible spectra.
-
mechanical properties of nano structured ti si n films synthesized by Cathodic Arc evaporation
Journal of Alloys and Compounds, 2007Co-Authors: Shengmin Yang, Yinyu Chang, Dayung Wang, Dongyih LinAbstract:Abstract Ti 1− x Si x N coatings were synthesized by Cathodic Arc evaporation with plasma-enhancing filter duct, using Ti 80 Si 20 alloy target as cathodes. Optical emission study revealed that excitation, ionization and charge transfer reactions of the Ti-Si-N plasma occurred during the Ti 1− x Si x N deposition process. The chemical content of Si varied from 3.3 to 6.0 at% in Ti 1− x Si x N depending on the nitrogen partial pressure of the reaction chamber. All the Ti 1− x Si x N coatings displayed a NaCl structure and a preferred (2 0 0) orientation parallel to the substrate surface. Among the studied Ti 1− x Si x N coatings, the Ti 1− x Si x N with 6 at.% Si possessed the highest hardness of 45 GPa and H 3 / E * 2 ratio of 0.527 GPa, indicating the best resistance to plastic deformation. We found that the structure and mechanical properties of the Ti 1− x Si x N films were correlated with the nitrogen pressure and silicon content of the coatings.
-
characterization of nanocrystalline altin coatings synthesized by a Cathodic Arc deposition process
Surface & Coatings Technology, 2007Co-Authors: Yinyu Chang, Dayung WangAbstract:Abstract Graded and multilayered Al x Ti 1− x N nanocrystalline coatings were synthesized by using Cathodic-Arc evaporation (CAE) process. Ti 33 Al 67 and Ti 50 Al 50 alloy cathodes were used for the deposition of Al x Ti 1− x N nanocrystalline coatings with different Al/(Ti+Al) ratios. Optical emission spectra of the plasma species including atomic and ionized Ti, atomic Al, excited and ionized nitrogen (N 2 and N 2 + ) revealed that the excitation, ionization and charge transfer reactions of the Al–Ti–N plasma occurred during the Al x Ti 1− x N coating process. A preferred (111) orientation was shown in the Al 0.67 Ti 0.33 N with high Al/(Ti+Al) atomic content ratio (0.63) and small grain size (29 nm). The graded Al 0.67 Ti 0.33 N/TiN possessed the highest hardness of Hv 25 g 3850 ± 180. However, the multilayered Al 0.67 Ti 0.33 N/TiN coating supported a longer tool life with lower residual stress. It has been found that the wear performance and mechanical properties of the films were correlated with the Al/(Ti+Al) content ratio and multilayered structure.
-
structural and mechanical properties of altin crn coatings synthesized by a Cathodic Arc deposition process
Surface & Coatings Technology, 2006Co-Authors: Yinyu Chang, Shunjan Yang, Dayung WangAbstract:Abstract Monolayered AlTiN and Multilayered AlTiN/CrN coatings were synthesized by a Cathodic-Arc deposition process, using TiAl (with 50/50 and 33/67 at.%) and Cr elemental cathodes. The atomic ratio of Al/(Ti + Al) in the AlTiN coatings was reduced to 0.44 and 0.61, respectively, compared with the corresponding Ti 50 Al 50 and Ti 33 Al 67 cathode materials. The multilayered AlTiN/CrN films showed smaller crystallite size, larger lattice strain, higher hardness, higher residual stress, and better adhesion strength as well than the monolayered AlTi films. The multilayered Al 0.35 Ti 0.22 N 0.43 /CrN coating exhibited the highest hardness of about 38 GPa and the highest H 3 / E * 2 ratio value of 0.188 GPa, indicating the best resistance to plastic deformation, among all the coatings studied.
-
corrosion behaviors of cr n o crn double layered coatings by Cathodic Arc deposition
Surface & Coatings Technology, 2005Co-Authors: Wei-yu Ho, Chi-lung Chang, Dunghau Huang, Dayung WangAbstract:Abstract In this study, the Cr(N,O)/CrN double-layered coatings on tool steel were deposited using Cathodic Arc deposition process. CrN layer was first deposited on tool steel as an interlayer to ensure better adhesion. Then Cr(N,O) was deposited as a surface layer. The Cr(N,O) composition was varied by changing the O 2 /N 2 flow ratios during the coating process. The phase structure, chemical composition, and morphology of coatings were observed by utilizing X-ray diffractometer, Auger electron spectrometer and AFM. The corrosion behavior of coatings was investigated using polarization and immersion tests. Polarization test of coatings was carried out in the solution of 3.5 wt.% NaCl. For immersion test, Cr(N,O)/CrN double-layered coatings were exposed under H 2 SO 4 environment for 26 h. The results showed that the corrosion resistance of Cr(N,O)/CrN double-layered coatings with thinner thickness with thinner thickness was better than that of CrN single layer since pinholes of coatings was inhibited by double layer structure.
Lars Hultman - One of the best experts on this subject based on the ideXlab platform.
-
filtered pulsed Cathodic Arc deposition of fullerene like carbon and carbon nitride films
Journal of Applied Physics, 2014Co-Authors: Mark D Tucker, Lars Hultman, Zsolt Czigany, Esteban Broitman, Larsake Naslund, Johanna RosenAbstract:Carbon and carbon nitride films (CNx, 0 ≤ x ≤ 0.26) were deposited by filtered pulsed Cathodic Arc and were investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. A “fullerene-like” (FL) structure of ordered graphitic planes, similar to that of magnetron sputtered FL-CNx films, was observed in films deposited at 175 °C and above, with N2 pressures of 0 and 0.5 mTorr. Higher substrate temperatures and significant nitrogen incorporation are required to produce similar FL structure by sputtering, which may, at least in part, be explained by the high ion charge states and ion energies characteristic of Arc deposition. A gradual transition from majority sp3-hybridized films to sp2 films was observed with increasing substrate temperature. High elastic recovery, an attractive characteristic mechanical property of FL-CNx films, is evident in Arc-deposited films both with and without nitrogen content, and both with and without FL structure.
-
filtered pulsed Cathodic Arc deposition of fullerene like carbon and carbon nitride films
Journal of Applied Physics, 2014Co-Authors: Mark D Tucker, Lars Hultman, Zsolt Czigany, Esteban Broitman, Larsake Naslund, Johanna RosenAbstract:Carbon and carbon nitride films (CNx, 0 ≤ x ≤ 0.26) were deposited by filtered pulsed Cathodic Arc and were investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. A “fullerene-like” (FL) structure of ordered graphitic planes, similar to that of magnetron sputtered FL-CNx films, was observed in films deposited at 175 °C and above, with N2 pressures of 0 and 0.5 mTorr. Higher substrate temperatures and significant nitrogen incorporation are required to produce similar FL structure by sputtering, which may, at least in part, be explained by the high ion charge states and ion energies characteristic of Arc deposition. A gradual transition from majority sp3-hybridized films to sp2 films was observed with increasing substrate temperature. High elastic recovery, an attractive characteristic mechanical property of FL-CNx films, is evident in Arc-deposited films both with and without nitrogen content, and both with and without FL structure.Carbon and carbon nitride films (CNx, 0 ≤ x ≤ 0.26) were deposited by filtered pulsed Cathodic Arc and were investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. A “fullerene-like” (FL) structure of ordered graphitic planes, similar to that of magnetron sputtered FL-CNx films, was observed in films deposited at 175 °C and above, with N2 pressures of 0 and 0.5 mTorr. Higher substrate temperatures and significant nitrogen incorporation are required to produce similar FL structure by sputtering, which may, at least in part, be explained by the high ion charge states and ion energies characteristic of Arc deposition. A gradual transition from majority sp3-hybridized films to sp2 films was observed with increasing substrate temperature. High elastic recovery, an attractive characteristic mechanical property of FL-CNx films, is evident in Arc-deposited films both with and without nitrogen content, and both with and without FL structure.
-
growth of hard amorphous tialsin thin films by Cathodic Arc evaporation
Surface & Coatings Technology, 2013Co-Authors: Hanna Fager, Magnus Oden, J M Andersson, M Johansson P Joesaar, Lars HultmanAbstract:Ti(1−x−y)AlxSiyNz (0.02≤x≤0.46, 0.02≤y≤0.28, and 1.08≤z≤1.29) thin films were grown on cemented carbide substrates in an industrial scale Cathodic Arc evaporation system using Ti-Al-Si compound cat ...
-
structural and mechanical properties of cr al o n thin films grown by Cathodic Arc deposition
Acta Materialia, 2012Co-Authors: Ali Khatibi, Jacob Sjolen, Jens Jensen, Grzegorz Greczynski, Per Eklund, Lars HultmanAbstract:Coatings of (CrxAl1-x)(delta)(O1-yNy)(xi) with 0.33 less than= x less than= 0.96, 0 less than= y less than= 1 and 0.63 less than= delta/xi less than= 1.30 were deposited using Cathodic Arc evaporat ...
-
layer formation by resputtering in ti si c hard coatings during large scale Cathodic Arc deposition
Surface & Coatings Technology, 2011Co-Authors: Anders Eriksson, Jacob Sjolen, Jens Jensen, Mats Johansson, Lars Hultman, Naureen Ghafoor, Magnus Oden, Johanna RosenAbstract:Abstract This paper presents the physical mechanism behind the phenomenon of self-layering in thin films made by industrial scale Cathodic Arc deposition systems using compound Ti–Si–C cathodes and rotating substrate fixture. For the as-deposited films, electron microscopy and energy dispersive X-ray spectrometry reveals a trapezoid modulation in Si content in the substrate normal direction, with a period of 4 to 23 nm dependent on cathode configuration. This is caused by preferential resputtering of Si by the energetic deposition flux incident at high incidence angles, when the substrates are facing away from the cathodes. The Ti-rich sub-layers exhibit TiC grains with sizes up to 5 nm, while layers with high Si-content are less crystalline. The nanoindentation hardness of the films increases with decreasing layer thickness.