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M V Fischetti - One of the best experts on this subject based on the ideXlab platform.
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Charge Trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
Journal of Applied Physics, 2003Co-Authors: Sufi Zafar, E P Gusev, A Callegari, M V FischettiAbstract:An experimental and modeling study of Charge Trapping related threshold voltage shifts in Al2O3 and HfO2 n-type field effect transistors (nFET) is reported. The dependence of threshold voltage, subthreshold slope, and gate leakage currents on stressing time and injected Charge carrier density are investigated as a function positive bias stress voltage and temperature. Based on experimental data, a model for Trapping of Charges in the existing traps is developed. The model is similar to SiO2 Charge Trapping models with one exception. Unlike SiO2 models, the model assumes a continuous distribution in Trapping capture cross sections. The model predicts that threshold voltage would increase with a power law dependence on stressing time and injected Charge carrier density (Ninj) in the initial stages of stressing. The model calculates threshold voltage shifts as a function of stress time and Ninj, thereby provides estimates of threshold voltage shifts after 10 years lifetime. It also provides insights into the...
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Charge Trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
Journal of Applied Physics, 2003Co-Authors: Sufi Zafar, E P Gusev, A Callegari, M V FischettiAbstract:An experimental and modeling study of Charge Trapping related threshold voltage shifts in Al2O3 and HfO2 n-type field effect transistors (nFET) is reported. The dependence of threshold voltage, subthreshold slope, and gate leakage currents on stressing time and injected Charge carrier density are investigated as a function positive bias stress voltage and temperature. Based on experimental data, a model for Trapping of Charges in the existing traps is developed. The model is similar to SiO2 Charge Trapping models with one exception. Unlike SiO2 models, the model assumes a continuous distribution in Trapping capture cross sections. The model predicts that threshold voltage would increase with a power law dependence on stressing time and injected Charge carrier density (Ninj) in the initial stages of stressing. The model calculates threshold voltage shifts as a function of stress time and Ninj, thereby provides estimates of threshold voltage shifts after 10 years lifetime. It also provides insights into the...
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Charge Trapping in high k gate dielectric stacks
2002 IEEE International Devices Meeting (IEDM), 2002Co-Authors: Sufi Zafar, E P Gusev, A Callegari, M V FischettiAbstract:Charge Trapping in Al/sub 2/O/sub 3/ and HfO/sub 2/ nFETs is studied. The dependence of threshold voltage, subthreshold slope and gate leakage currents are investigated as a function of stressing time, voltage and temperature. Based on the experimental data, a model is developed for predicting threshold voltage shifts as a function stressing time. The model is compatible with both Al/sub 2/O/sub 3/ and HfO/sub 2/ data. Using the model, threshold voltage shifts after 10 years of stressing is predicted and Trapping capture cross sections are estimated. A comparison between Al/sub 2/O/sub 3/ and HfO/sub 2/ is also made.
Sufi Zafar - One of the best experts on this subject based on the ideXlab platform.
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Charge Trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
Journal of Applied Physics, 2003Co-Authors: Sufi Zafar, E P Gusev, A Callegari, M V FischettiAbstract:An experimental and modeling study of Charge Trapping related threshold voltage shifts in Al2O3 and HfO2 n-type field effect transistors (nFET) is reported. The dependence of threshold voltage, subthreshold slope, and gate leakage currents on stressing time and injected Charge carrier density are investigated as a function positive bias stress voltage and temperature. Based on experimental data, a model for Trapping of Charges in the existing traps is developed. The model is similar to SiO2 Charge Trapping models with one exception. Unlike SiO2 models, the model assumes a continuous distribution in Trapping capture cross sections. The model predicts that threshold voltage would increase with a power law dependence on stressing time and injected Charge carrier density (Ninj) in the initial stages of stressing. The model calculates threshold voltage shifts as a function of stress time and Ninj, thereby provides estimates of threshold voltage shifts after 10 years lifetime. It also provides insights into the...
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Charge Trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
Journal of Applied Physics, 2003Co-Authors: Sufi Zafar, E P Gusev, A Callegari, M V FischettiAbstract:An experimental and modeling study of Charge Trapping related threshold voltage shifts in Al2O3 and HfO2 n-type field effect transistors (nFET) is reported. The dependence of threshold voltage, subthreshold slope, and gate leakage currents on stressing time and injected Charge carrier density are investigated as a function positive bias stress voltage and temperature. Based on experimental data, a model for Trapping of Charges in the existing traps is developed. The model is similar to SiO2 Charge Trapping models with one exception. Unlike SiO2 models, the model assumes a continuous distribution in Trapping capture cross sections. The model predicts that threshold voltage would increase with a power law dependence on stressing time and injected Charge carrier density (Ninj) in the initial stages of stressing. The model calculates threshold voltage shifts as a function of stress time and Ninj, thereby provides estimates of threshold voltage shifts after 10 years lifetime. It also provides insights into the...
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Charge Trapping in ultrathin hafnium oxide
IEEE Electron Device Letters, 2002Co-Authors: Wenjuan Zhu, Sufi Zafar, T P, T TamagawaAbstract:The Charge Trapping properties of ultrathin HfO/sub 2/ in MOS capacitors during constant voltage stress have been investigated. The effects of stress voltage, substrate type, annealing temperature, and gate electrode are presented in this letter. It is shown that the generation of interface-trap density under constant-voltage stress is much more significant for samples with Pt gate electrodes than that with Al gates. The Trapping-induced flatband shift in HfO/sub 2/ with Al gates increases monotonically with injection fluence for p-type Si substrates, while it shows a turnaround phenomenon for n-type Si substrates due to the shift of the Charge centroid. The Trapping-induced flatband shift is nearly independent of stress voltage for p-type substrates, while it increases dramatically with stress voltage for n-type Si substrates due to two competing mechanisms. The trap density can be reduced by increasing the annealing temperature from 500/spl deg/C to 600/spl deg/C. The typical Trapping probability for JVD HfO/sub 2/ is similar to that for ALD HfO/sub 2/.
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Charge Trapping in high k gate dielectric stacks
2002 IEEE International Devices Meeting (IEDM), 2002Co-Authors: Sufi Zafar, E P Gusev, A Callegari, M V FischettiAbstract:Charge Trapping in Al/sub 2/O/sub 3/ and HfO/sub 2/ nFETs is studied. The dependence of threshold voltage, subthreshold slope and gate leakage currents are investigated as a function of stressing time, voltage and temperature. Based on the experimental data, a model is developed for predicting threshold voltage shifts as a function stressing time. The model is compatible with both Al/sub 2/O/sub 3/ and HfO/sub 2/ data. Using the model, threshold voltage shifts after 10 years of stressing is predicted and Trapping capture cross sections are estimated. A comparison between Al/sub 2/O/sub 3/ and HfO/sub 2/ is also made.
Qing Chen - One of the best experts on this subject based on the ideXlab platform.
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Charge Trapping at the mos2 sio2 interface and its effects on the characteristics of mos2 metal oxide semiconductor field effect transistors
Applied Physics Letters, 2015Co-Authors: Changrong Guan, Qing ChenAbstract:The field effect transistors (FETs) based on thin layer MoS2 often have large hysteresis and unstable threshold voltage in their transfer curves, mainly due to the Charge Trapping at the oxide-semiconductor interface. In this paper, the Charge Trapping and de-Trapping processes at the SiO2-MoS2 interface are studied. The Trapping Charge density and time constant at different temperatures are extracted. Making use of the trapped Charges, the threshold voltage of the MoS2 based metal-oxide-semiconductor FETs is adjusted from 4 V to −45 V. Furthermore, the impact of the trapped Charges on the carrier transport is evaluated. The trapped Charges are suggested to give rise to the unscreened Coulomb scattering and/or the variable range hopping in the carrier transport of the MoS2 sheet.
Hyunsang Hwang - One of the best experts on this subject based on the ideXlab platform.
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characterization of fast Charge Trapping in bias temperature instability in metal oxide semiconductor field effect transistor with high dielectric constant
Applied Physics Letters, 2010Co-Authors: Seonghyun Kim, Joonmyoung Lee, Seungjae Jung, Ju Bong Park, Hyung Suk Jung, Rino Choi, Hyunsang HwangAbstract:We used pulse bias temperature instability measurements to investigate the energy distributions of fast Charge Trapping sources to understand the origin of fast Charge traps in an HfO2 device. The trap energy level was extracted using a trap-to-band tunneling model by changing the measurement delay time. The fast electron traps in an n-channel metal oxide semiconductor field effect transistors (MOSFET) exist in a 1 eV range below the bottom of the HfO2 conduction band. In the case of a p-channel MOSFET, the fast hole traps exist in the range 1–2 eV above the top of the HfO2 valence band, which could be attributed to a formation of negatively Charged NO defects.
A Callegari - One of the best experts on this subject based on the ideXlab platform.
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Charge Trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
Journal of Applied Physics, 2003Co-Authors: Sufi Zafar, E P Gusev, A Callegari, M V FischettiAbstract:An experimental and modeling study of Charge Trapping related threshold voltage shifts in Al2O3 and HfO2 n-type field effect transistors (nFET) is reported. The dependence of threshold voltage, subthreshold slope, and gate leakage currents on stressing time and injected Charge carrier density are investigated as a function positive bias stress voltage and temperature. Based on experimental data, a model for Trapping of Charges in the existing traps is developed. The model is similar to SiO2 Charge Trapping models with one exception. Unlike SiO2 models, the model assumes a continuous distribution in Trapping capture cross sections. The model predicts that threshold voltage would increase with a power law dependence on stressing time and injected Charge carrier density (Ninj) in the initial stages of stressing. The model calculates threshold voltage shifts as a function of stress time and Ninj, thereby provides estimates of threshold voltage shifts after 10 years lifetime. It also provides insights into the...
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Charge Trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
Journal of Applied Physics, 2003Co-Authors: Sufi Zafar, E P Gusev, A Callegari, M V FischettiAbstract:An experimental and modeling study of Charge Trapping related threshold voltage shifts in Al2O3 and HfO2 n-type field effect transistors (nFET) is reported. The dependence of threshold voltage, subthreshold slope, and gate leakage currents on stressing time and injected Charge carrier density are investigated as a function positive bias stress voltage and temperature. Based on experimental data, a model for Trapping of Charges in the existing traps is developed. The model is similar to SiO2 Charge Trapping models with one exception. Unlike SiO2 models, the model assumes a continuous distribution in Trapping capture cross sections. The model predicts that threshold voltage would increase with a power law dependence on stressing time and injected Charge carrier density (Ninj) in the initial stages of stressing. The model calculates threshold voltage shifts as a function of stress time and Ninj, thereby provides estimates of threshold voltage shifts after 10 years lifetime. It also provides insights into the...
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Charge Trapping in high k gate dielectric stacks
2002 IEEE International Devices Meeting (IEDM), 2002Co-Authors: Sufi Zafar, E P Gusev, A Callegari, M V FischettiAbstract:Charge Trapping in Al/sub 2/O/sub 3/ and HfO/sub 2/ nFETs is studied. The dependence of threshold voltage, subthreshold slope and gate leakage currents are investigated as a function of stressing time, voltage and temperature. Based on the experimental data, a model is developed for predicting threshold voltage shifts as a function stressing time. The model is compatible with both Al/sub 2/O/sub 3/ and HfO/sub 2/ data. Using the model, threshold voltage shifts after 10 years of stressing is predicted and Trapping capture cross sections are estimated. A comparison between Al/sub 2/O/sub 3/ and HfO/sub 2/ is also made.