The Experts below are selected from a list of 282 Experts worldwide ranked by ideXlab platform

W. T. Tsang - One of the best experts on this subject based on the ideXlab platform.

  • Chemical Beam Epitaxy and related techniques
    1997
    Co-Authors: John S. Foord, G J Davies, W. T. Tsang
    Abstract:

    Chemical Beam Epitaxy: An Introduction (G. Davies, et al.). Growth Apparatus Design and Safety Considerations (F. Alexandre & J. Benchimol). Precursors for Chemical Beam Epitaxy (D. Bohling). Reaction Mechanisms for III-V Semiconductor Growth by Chemical Beam Epitaxy: Physical Origins of the Growth Kinetics and Film Purities Observed (J. Foord). Growth of GaAs-Based Devices by Chemical Beam Epitaxy (C. Abernathy). CBE InP-Based Materials and Devices (W. Tsang & T. Chiu). MOMBE of Antiminides and Growth Model (H. Asahi). Chemical Beam Epitaxy of Widegap II-VI Compound Semiconductors (A. Yoshikawa). Gas Source Molecular Beam Epitaxy of Silicon and Related Materials (Y. Shiraki). Gas Source Molecular Beam Epitaxy (L. Goldstein). Dopants and Dopant Incorporation (T. Whitaker & T. Martin). Selected Area Epitaxy (H. Heinecke & G. Davies). Chemical Beam Etching (W. Tsang & T. Chiu). Laser-Assisted Epitaxy (H. Sugiura). Index.

  • Chemical Beam Epitaxy and related techniques
    1997
    Co-Authors: John S. Foord, G J Davies, W. T. Tsang
    Abstract:

    Chemical Beam Epitaxy: An Introduction (G. Davies, et al.). Growth Apparatus Design and Safety Considerations (F. Alexandre & J. Benchimol). Precursors for Chemical Beam Epitaxy (D. Bohling). Reaction Mechanisms for III-V Semiconductor Growth by Chemical Beam Epitaxy: Physical Origins of the Growth Kinetics and Film Purities Observed (J. Foord). Growth of GaAs-Based Devices by Chemical Beam Epitaxy (C. Abernathy). CBE InP-Based Materials and Devices (W. Tsang & T. Chiu). MOMBE of Antiminides and Growth Model (H. Asahi). Chemical Beam Epitaxy of Widegap II-VI Compound Semiconductors (A. Yoshikawa). Gas Source Molecular Beam Epitaxy of Silicon and Related Materials (Y. Shiraki). Gas Source Molecular Beam Epitaxy (L. Goldstein). Dopants and Dopant Incorporation (T. Whitaker & T. Martin). Selected Area Epitaxy (H. Heinecke & G. Davies). Chemical Beam Etching (W. Tsang & T. Chiu). Laser-Assisted Epitaxy (H. Sugiura). Index.

  • semi insulating inp grown by Chemical Beam Epitaxy with pentacarbonyliron doping
    Applied Physics Letters, 1995
    Co-Authors: J. D. Walker, W. T. Tsang
    Abstract:

    We present semi‐insulating iron‐doped InP grown by Chemical Beam Epitaxy using the gaseous source pentacarbonyliron, Fe(CO)5. Analysis by secondary ion mass spectroscopy shows that iron incorporation is proportional to the Fe(CO)5 flow rate over the 5×1017–5×1019 cm−3 range studied. Use of Fe(CO)5 as an iron source also leads to high ∼1018 cm−3 carbon incorporation in the material, but this does not interfere with semi‐insulating behavior. The material shows 30 MΩ cm resistivity for a broad range of Fe(CO)5 flow rates. No oxygen incorporation was observed

  • Semi‐insulating InP grown by Chemical Beam Epitaxy with pentacarbonyliron doping
    Applied Physics Letters, 1995
    Co-Authors: J. D. Walker, W. T. Tsang
    Abstract:

    We present semi‐insulating iron‐doped InP grown by Chemical Beam Epitaxy using the gaseous source pentacarbonyliron, Fe(CO)5. Analysis by secondary ion mass spectroscopy shows that iron incorporation is proportional to the Fe(CO)5 flow rate over the 5×1017–5×1019 cm−3 range studied. Use of Fe(CO)5 as an iron source also leads to high ∼1018 cm−3 carbon incorporation in the material, but this does not interfere with semi‐insulating behavior. The material shows 30 MΩ cm resistivity for a broad range of Fe(CO)5 flow rates. No oxygen incorporation was observed

  • Pentacarbonyliron doping for semi-insulating InP by Chemical Beam Epitaxy
    Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on, 1995
    Co-Authors: W. T. Tsang, J. D. Walker
    Abstract:

    We present semi-insulating iron-doped InP grown by Chemical Beam Epitaxy using the gaseous iron Fe(CO)5. SIMS analysis shows that iron incorporation is proportional to the Fe(CO)5 flow rate over the 5×1017-5×1019 cm-3 range studied. Use of Fe(CO)5 as an iron source also leads to high αp 1018 cm-3 carbon incorporation in the material, but this does not interfere with semi-insulating behavior. The material shows 30 MΩ-cm resistivity for a broad range of Fe(CO)5 flow rates

Kenichi Iga - One of the best experts on this subject based on the ideXlab platform.

  • 1.4 µm GaInNAs/GaAs Quantum Well Laser Grown by Chemical Beam Epitaxy
    Japanese Journal of Applied Physics, 2002
    Co-Authors: Yuki Ikenaga, TAKEO KAGEYAMA, Masakazu Arai, Satoshi Makino, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga
    Abstract:

    We have achieved room-temperature pulsed operation of 1.4-µm-wavelength GaInNAs/GaAs double quantum well (DQW) lasers with increased nitrogen composition up to 1.7% grown by Chemical Beam Epitaxy (CBE). A threshold current density of 8.9 kA/cm2 was obtained, and the characteristic temperature (T0) from 10 to 40°C was 94 K.

  • 1 4 µm gainnas gaas quantum well laser grown by Chemical Beam Epitaxy
    Japanese Journal of Applied Physics, 2002
    Co-Authors: Yuki Ikenaga, TAKEO KAGEYAMA, Masakazu Arai, Satoshi Makino, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga
    Abstract:

    We have achieved room-temperature pulsed operation of 1.4-µm-wavelength GaInNAs/GaAs double quantum well (DQW) lasers with increased nitrogen composition up to 1.7% grown by Chemical Beam Epitaxy (CBE). A threshold current density of 8.9 kA/cm2 was obtained, and the characteristic temperature (T0) from 10 to 40°C was 94 K.

  • Chemical Beam Epitaxy Growth and Characterization of GaNAs/GaAs
    Japanese Journal of Applied Physics, 1998
    Co-Authors: Kanji Takeuchi, TAKEO KAGEYAMA, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga
    Abstract:

    A GaNAs layer has been grown on a GaAs substrate using Chemical Beam Epitaxy (CBE) with a radio frequency (RF) radical nitrogen source for the first time. The nitrogen (N) composition was well-controlled by the N2 flow rate and was increased up to 2.7%, maintaining a good crystal quality. The maximum N composition was estimated to be 20% by a secondary ion mass spectroscopy (SIMS) measurement. The N composition estimated from both X-ray diffraction measurements and SIMS measurements were in good agreement. This shows that the N composition can simply be determined by X-ray diffraction measurements. The optical absorption measurement of the grown GaNAs was also carried out. The bandgap bowing parameter of GaNAs was found to be not a constant and varied between 15–23 eV for N

  • GaInNAs/GaAs Quantum Well Growth by Chemical Beam Epitaxy
    Japanese Journal of Applied Physics, 1998
    Co-Authors: Tomoyuki Miyamoto, TAKEO KAGEYAMA, Fumio Koyama, Kanji Takeuchi, Kenichi Iga
    Abstract:

    This is the first report on Chemical Beam Epitaxy (CBE) of GaInNAs/GaAs quantum wells (QWs). From the observed clear X-ray diffraction satellite peaks, the QW structure incorporating nitrogen supplied by radical nitrogen was successfully grown. The photoluminescence emission with the emission peak wavelength of 1.0 µm was observed from GaInNAs/GaAs QWs at room temperature. The wavelength could be elongated by increasing the amount of nitrogen and indium.

  • gainnas gaas quantum well growth by Chemical Beam Epitaxy
    Japanese Journal of Applied Physics, 1998
    Co-Authors: Tomoyuki Miyamoto, TAKEO KAGEYAMA, Fumio Koyama, Kanji Takeuchi, Kenichi Iga
    Abstract:

    This is the first report on Chemical Beam Epitaxy (CBE) of GaInNAs/GaAs quantum wells (QWs). From the observed clear X-ray diffraction satellite peaks, the QW structure incorporating nitrogen supplied by radical nitrogen was successfully grown. The photoluminescence emission with the emission peak wavelength of 1.0 µm was observed from GaInNAs/GaAs QWs at room temperature. The wavelength could be elongated by increasing the amount of nitrogen and indium.

R.m. Kapre - One of the best experts on this subject based on the ideXlab platform.

  • ingaas ingaasp integrated tunable detector grown by Chemical Beam Epitaxy
    Applied Physics Letters, 1993
    Co-Authors: Fow-sen Choa, Y. K. Chen, W. T. Tsang, R. A. Logan, R. P. Gnall, Thomas L. Koch, C. A. Burrus, R.m. Kapre
    Abstract:

    By controlling the thickness of the grating depth with Chemical Beam Epitaxy (CBE) growth time, we report in this letter the design and performance of an integrated tunable detector. A carefully designed tunable active filter, which allows only one below threshold Fabry–Perot mode for operation, is integrated with a waveguide detector. The full tuning range of this kind of tunable device can now be utilized for system applications.

  • InGaAs/InGaAsP integrated tunable detector grown by Chemical Beam Epitaxy
    Applied Physics Letters, 1993
    Co-Authors: Fow-sen Choa, W. T. Tsang, Y. K. Chen, R. A. Logan, R. P. Gnall, Thomas L. Koch, C. A. Burrus, R.m. Kapre
    Abstract:

    By controlling the thickness of the grating depth with Chemical Beam Epitaxy (CBE) growth time, we report in this letter the design and performance of an integrated tunable detector. A carefully designed tunable active filter, which allows only one below threshold Fabry–Perot mode for operation, is integrated with a waveguide detector. The full tuning range of this kind of tunable device can now be utilized for system applications.

  • Multiwavelength laser array by Chemical Beam Epitaxy on patterned InP substrates
    Electronics Letters, 1993
    Co-Authors: R.m. Kapre, W. T. Tsang, Y. K. Chen, Arthur Mike Sergent
    Abstract:

    A multiwavelength laser array has been obtained through growth on patterened InP substrates using Chemical Beam Epitaxy. This technique makes use of interfacet migration of reactant species to obtain compositional and/or thickness variation with position on a set of patterned ridges. Results obtained on

Tomoyuki Miyamoto - One of the best experts on this subject based on the ideXlab platform.

  • 1.4 µm GaInNAs/GaAs Quantum Well Laser Grown by Chemical Beam Epitaxy
    Japanese Journal of Applied Physics, 2002
    Co-Authors: Yuki Ikenaga, TAKEO KAGEYAMA, Masakazu Arai, Satoshi Makino, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga
    Abstract:

    We have achieved room-temperature pulsed operation of 1.4-µm-wavelength GaInNAs/GaAs double quantum well (DQW) lasers with increased nitrogen composition up to 1.7% grown by Chemical Beam Epitaxy (CBE). A threshold current density of 8.9 kA/cm2 was obtained, and the characteristic temperature (T0) from 10 to 40°C was 94 K.

  • 1 4 µm gainnas gaas quantum well laser grown by Chemical Beam Epitaxy
    Japanese Journal of Applied Physics, 2002
    Co-Authors: Yuki Ikenaga, TAKEO KAGEYAMA, Masakazu Arai, Satoshi Makino, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga
    Abstract:

    We have achieved room-temperature pulsed operation of 1.4-µm-wavelength GaInNAs/GaAs double quantum well (DQW) lasers with increased nitrogen composition up to 1.7% grown by Chemical Beam Epitaxy (CBE). A threshold current density of 8.9 kA/cm2 was obtained, and the characteristic temperature (T0) from 10 to 40°C was 94 K.

  • Chemical Beam Epitaxy Growth and Characterization of GaNAs/GaAs
    Japanese Journal of Applied Physics, 1998
    Co-Authors: Kanji Takeuchi, TAKEO KAGEYAMA, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga
    Abstract:

    A GaNAs layer has been grown on a GaAs substrate using Chemical Beam Epitaxy (CBE) with a radio frequency (RF) radical nitrogen source for the first time. The nitrogen (N) composition was well-controlled by the N2 flow rate and was increased up to 2.7%, maintaining a good crystal quality. The maximum N composition was estimated to be 20% by a secondary ion mass spectroscopy (SIMS) measurement. The N composition estimated from both X-ray diffraction measurements and SIMS measurements were in good agreement. This shows that the N composition can simply be determined by X-ray diffraction measurements. The optical absorption measurement of the grown GaNAs was also carried out. The bandgap bowing parameter of GaNAs was found to be not a constant and varied between 15–23 eV for N

  • GaInNAs/GaAs Quantum Well Growth by Chemical Beam Epitaxy
    Japanese Journal of Applied Physics, 1998
    Co-Authors: Tomoyuki Miyamoto, TAKEO KAGEYAMA, Fumio Koyama, Kanji Takeuchi, Kenichi Iga
    Abstract:

    This is the first report on Chemical Beam Epitaxy (CBE) of GaInNAs/GaAs quantum wells (QWs). From the observed clear X-ray diffraction satellite peaks, the QW structure incorporating nitrogen supplied by radical nitrogen was successfully grown. The photoluminescence emission with the emission peak wavelength of 1.0 µm was observed from GaInNAs/GaAs QWs at room temperature. The wavelength could be elongated by increasing the amount of nitrogen and indium.

  • gainnas gaas quantum well growth by Chemical Beam Epitaxy
    Japanese Journal of Applied Physics, 1998
    Co-Authors: Tomoyuki Miyamoto, TAKEO KAGEYAMA, Fumio Koyama, Kanji Takeuchi, Kenichi Iga
    Abstract:

    This is the first report on Chemical Beam Epitaxy (CBE) of GaInNAs/GaAs quantum wells (QWs). From the observed clear X-ray diffraction satellite peaks, the QW structure incorporating nitrogen supplied by radical nitrogen was successfully grown. The photoluminescence emission with the emission peak wavelength of 1.0 µm was observed from GaInNAs/GaAs QWs at room temperature. The wavelength could be elongated by increasing the amount of nitrogen and indium.

Noriyuki Yokouchi - One of the best experts on this subject based on the ideXlab platform.

  • Surface emitting lasers grown by Chemical Beam Epitaxy
    Journal of Crystal Growth, 1994
    Co-Authors: Tomoyuki Miyamoto, Noriyuki Yokouchi, T Uchida, Kenichi Iga
    Abstract:

    Abstract We have established a Chemical Beam Epitaxy technology for the growth of λ = 1.55 μm GaInAsP/InP surface emitting laser wafers by confirming the controllability of composition and thickness, and doping conditions. We investigated the optical and electrical properties of Be-doped InP, necessary for obtaining good surface morphology and low electrical resistance. The crystal quality was characterized by making stripe lasers, and the growth of GaInAsP/InP multilayer reflectors was attempted. Also, the first lasing of 1.5 μm surface emitting lasers has been demonstrated by Chemical Beam Epitaxy (CBE) and a very low threshold was realized using a hybrid mirror.

  • GaInAsP/InP Multi-Quantum Barrier (MQB) Grown by Chemical Beam Epitaxy (CBE)
    Japanese Journal of Applied Physics, 1993
    Co-Authors: Yuichi Inaba, Noriyuki Yokouchi, Takashi Uchida, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga
    Abstract:

    A multi-quantum barrier (MQB) using the GaInAsP/InP system has been demonstrated for the first time. n-i-n tunneling diodes consisting of MQB and bulk barriers were grown by Chemical Beam Epitaxy (CBE). From the measurement of 77 K current-voltage characteristics, the effective potential barrier height of 1.3 times the classical conduction band offset was obtained in the MQB structure.

  • Chemical Beam Epitaxy growth of gainasp/inp and application to surface‐emitting lasers
    Electronics and Communications in Japan Part Ii-electronics, 1993
    Co-Authors: Takashi Uchida, Noriyuki Yokouchi, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga
    Abstract:

    This paper discusses the doping characteristics and the crystalline quality of GaInAsP/InP grown by a Chemical Beam Epitaxy method important for realizing surface-emitting lasers of long wavelengths. A good controllability of Be doping and very little degradation examined by photoluminescence are found in GaInAsP and InP for a wide range of Be dopants. The crystalline quality of a double heterostructure is improved by optimizing a growth condition. As a result, a minimum threshold current density of 5 kA/cm2 is obtained for edge-emitting lasers at a 1-μm thick active layer. Under the optimized condition, a circular mesa-cap surface-emitter laser is fabricated. The minimum threshold current of 2.7 mA and the threshold current density 450 A/cm2 are obtained at 77 K under the CW operation. A pulsed operation of an SE laser with GaInAsP/InP multilayer reflector is confirmed near room temperature. The applicability of the Chemical Beam Epitaxy method for growing an SE laser is described.

  • Chemical Beam Epitaxy growth of gainasp/inp and application to surface-emitting lasers
    Electronics and Communications in Japan (Part II: Electronics), 1993
    Co-Authors: Takashi Uchida, Noriyuki Yokouchi, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga
    Abstract:

    This paper discusses the doping characteristics and the crystalline quality of GaInAsP/InP grown by a Chemical Beam Epitaxy method important for realizing surface-emitting lasers of long wavelengths. A good controllability of Be doping and very little degradation examined by photoluminescence are found in GaInAsP and InP for a wide range of Be dopants. The crystalline quality of a double heterostructure is improved by optimizing a growth condition. As a result, a minimum threshold current density of 5 kA/cm2 is obtained for edge-emitting lasers at a 1-μm thick active layer. Under the optimized condition, a circular mesa-cap surface-emitter laser is fabricated. The minimum threshold current of 2.7 mA and the threshold current density 450 A/cm2 are obtained at 77 K under the CW operation. A pulsed operation of an SE laser with GaInAsP/InP multilayer reflector is confirmed near room temperature. The applicability of the Chemical Beam Epitaxy method for growing an SE laser is described.

  • an optical absorption property of highly beryllium doped gainasp grown by Chemical Beam Epitaxy
    Japanese Journal of Applied Physics, 1992
    Co-Authors: Noriyuki Yokouchi, Takashi Uchida, Tomoyuki Miyamoto, Fumio Koyama, Yuichi Inaba, Kenichi Iga
    Abstract:

    The optical absorption property of highly beryllium (Be)-doped GaInAsP (λg=1.31 µm, p=2×1019 cm-3) grown by Chemical Beam Epitaxy (CBE) was investigated. The absorption coefficient was estimated from the transmissivity of a Fabry-Perot resonator formed by selective etching of an InP substrate. We found a fairly large absorption (α\cong400 cm-1) in Be-doped material in the longer wavelength region (λ>1.35 µm).